NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
KDS4559 - Datasheet Archive
IC SMD Type 60V Complementary PowerTrench MOSFET KDS4559 Features N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m @ VGS = 10 V
Transistors IC SMD Type 60V Complementary PowerTrench MOSFET KDS4559 KDS4559 Features N-Channel 4.5 A, 60 V RDS(ON) = 55m RDS(ON) = 75m @ VGS = 10 V @ VGS =4.5V P-Channel -3.5 A, -60 V RDS(ON) = 105 m RDS(ON) = 135 m @ VGS =- 10 V @ VGS =-4.5V Absolute Maximum Ratings Ta = 25 Symbol N-Channel P- Channel Unit Drain to Source Voltage Parameter VDSS 60 -60 V Gate to Source Voltage VGS 20 V Drain Current Continuous (Note 1a) 20 4.5 -3.5 A 20 ID Drain Current Pulsed -20 A PD Power Dissipation for Single Operation 2 PD 1.2 1.6 Power Dissipation for Single Operation (Note 1a) (Note 1b) W 1 (Note 1c) Operating and Storage Temperature W TJ, TSTG -55 to 175 Thermal Resistance Junction to Ambient (Note 1a) R JA 78 /W Thermal Resistance Junction to Case R JC 40 /W (Note 1) www.kexin.com.cn 1 Transistors IC SMD Type KDS4559 KDS4559 Electrical Characteristics Ta = 25 Parameter Single Pulse Drain-Source Avalanche Energy W DSS Testconditons Symbol Maximum Drain-Source Avalanche Current Drain-Source Breakdown Voltage BVDSS ID = 250 Breakdown Voltage Temperature Coefficient mJ A, Referenced to 25 Typ A 60 P-Ch A A, Referenced to 25 ID = -250 90 4.5 N-Ch A VGS = 0 V, ID = -250 Unit N-Ch VGS = 0 V, ID = 250 Max N-Ch VDD = 30 V, ID = 4.5 A IAR Min -60 V N-Ch 58 P-Ch -49 mV/ IDSS Gate-Body Leakage IGSS Gate Threshold Voltage VGS(th) VDS = 48V, VGS = 0 V N-Ch 1 VDS = -48 V, VGS = 0 V P-Ch -1 VGS = 20V, VDS = 0 V N-Ch 100 VGS = Zero Gate Voltage Drain Current 20 V, VDS = 0 V P-Ch 100 VDS = VGS, ID = 250 ID = 250 Gate Threshold Voltage Temperature Coefficient ID = -250 N-Ch A 1 2.2 3 P-Ch A VDS = VGS, ID = -250 -1 -1.6 -3 A, Referenced to 25 N-Ch P-Ch RDS(on) VGS = 10 V, ID = 4.5 A,TJ = 125 55 N-Ch 72 94 mV/ VGS = 4.5 V, ID =4 A RDS(on) 55 75 VGS = -10 V, ID =-3.5 A Static Drain-Source On-Resistance 82 105 P-Ch 130 VGS = -4.5 V, ID =-3.1A 135 Forward Transconductance ID(on) gFS Input Capacitance Ciss Output Capacitance VGS = 10 V, VDS = 5V N-Ch 20 VGS = -10 V, VDS = -5V P-Ch -20 VDS = 10V, ID = 4.5A N-Ch 14 VDS = -5V, ID = -3.5A On-State Drain Current P-Ch 9 N-Channel N-Ch 650 VDS = 25 V, VGS = 0 V,f = 1.0 MHz P-Ch 759 Coss A S pF Turn-On Delay Time td(on) Turn-On Rise Time tr 80 P-Ch 90 VDS = -30 V, VGS = 0 V,f = 1.0 MHz N-Ch 35 P-Ch 39 N-Channel N-Ch 11 20 VDD = 30 V, ID = 1 A, P-Ch 7 14 N-Ch 8 18 P-Ch Crss N-Ch P-Channel Reverse Transfer Capacitance 10 20 VGS = 10 V, RGEN = 6 (Note 2) pF pF td(off) Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge 2 www.kexin.com.cn Qgd P-Channel N-Ch 19 35 VDD = -30 V, ID = -1 A, P-Ch 19 34 N-Ch 6 15 P-Ch 12 22 N-Channel N-Ch 12.5 18 VDS =30V,ID=4.5A,VGS=10V P-Ch 15 21 (Note 2) N-Ch 2.4 P-Channel Turn-Off Delay Time m 190 105 VGS = -10 V, ID =-3.5 A,TJ = 125 V 4 VGS = 10 V, ID =4.5A Static Drain-Source On-Resistance nA -5.5 42 A, Referenced to 25 A P-Ch 2.5 VDS=-30V,ID=-3.5A,VGS=-10V N-Ch 2.6 (Note 2) P-Ch 3.0 VGS = -10 V, RGEN = 6 (Note 2) ns ns ns ns nC nC nC Transistors IC SMD Type KDS4559 KDS4559 Electrical Characteristics Ta = 25 Parameter Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Symbol Testconditons Typ Max 1.3 P-Ch IS VSD Min N-Ch -1.3 VGS = 0 V, IS = 1.3A (Not 2) N-Ch 0.8 1.2 VGS = 0 V, IS = -1.3A (Not 2) P-Ch -0.8 -1.2 Unit A V www.kexin.com.cn 3