KC817W KC817-16W KC817-40W KC817-25W

SMD Type NPN Silicon AF Transistors KC817W Features For general AF applications. High collector current. High current gain. Low

Transistors SMD Type NPN Silicon AF Transistors KC817W KC817W Features For general AF applications. High collector current. High current gain. Low collector-emitter saturation voltage. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 50 V Collector-emitter voltage VCEO 45 V Emitter-base voltage VEBO 5 V Collector current (DC) IC 500 mA Peak collector current ICM 1 A Base current IB 100 mA power dissipation PD 250 mW Junction temperature Tj 150 Storage temperature Tstg -65 to +150 Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit Collector-to-base breakdown voltage VCBO IC = 10 A, IE = 0 50 V Collector-to-emitter breakdown voltage VCEO IC = 10 mA, IB = 0 45 V Emitter-to-base breakdown voltage VEBO IE = 10 5 V Collector cutoff current ICBO A, IC = 0 IEBO 100 nA VCB = 25 V, IE = 0 , TA = 150 Emitter cutoff current VCB = 25 V, IE = 0 50 A 100 nA VEB = 4 V, IC = 0 KC817-16W KC817-16W DC current gain * 100 IC = 100 mA, VCE = -1 V KC817-40W KC817-40W 250 160 250 400 250 hFE KC817-25W KC817-25W 160 350 630 Collector saturation voltage * VCE(sat) IC = 500 mA, IB = 50 mA 0.7 V Base to emitter voltage * VBE(sat) IC = 500 mA, IB = 50 mA 1.2 V Collector-base capacitance CCb VCB = 10 V, f = 1 MHz 6 pF Emitter-base capacitance Ceb VEB = 0.5 V, f = 1 MHz 60 pF IC = 50 mA, VCE = 5 V, f = 100 MHz 170 MHz Transition frequency * Pulsed: PW fT 350 ìs, duty cycle 2% Marking NO. KC817-16W KC817-16W KC817-25W KC817-25W KC817-40W KC817-40W Marking 6A 6B 6C www.kexin.com.cn 1