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K8S2815E

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K8S2815E

Abstract: K8S2815ET November 2008 K8S2815ET(B)C NOR FLASH MEMORY Table 3: K8S2815ETC DEVICE BANK DIVISIONS Bank , K8S2815ET(B)C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification INFORMATION IN THIS , . 1 Revision 1.2 November 2008 K8S2815ET(B)C NOR FLASH MEMORY Document Title 128M Bit , /products_index.html 2 Revision 1.2 November 2008 K8S2815ET(B)C NOR FLASH MEMORY The attached , Revision 1.2 November 2008 K8S2815ET(B)C NOR FLASH MEMORY 128Mb C-die SLC NOR Specification 1 1
Samsung Electronics
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K8S2815E BA213 ba148 samsung nor flash BA149 108MH K8S2815EBC

BA258

Abstract: ba146 1.2 September, 2006 K8S2815ET(B)B Table 3-1. Top Boot Block Address Table(K8S2815ETB) Bank Block , 6 Revision 1.2 September, 2006 K8S2815ET(B)B Table 3-1. Top Block Address Table (K8S2815ETB , 1.2 September, 2006 K8S2815ET(B)B Table 3-1. Top Block Address Table (K8S2815ETB) Bank Block , 10 Revision 1.2 September, 2006 K8S2815ET(B)B Table 3-1. Top Block Address Table (K8S2815ETB , September, 2006 K8S2815ET(B)B Table 3-2. Bottom Boot Block Address (K8S2815EBB) Bank Block BA262 BA261
Samsung Electronics
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BA258 ba146 BA204 ba198 00003FH 00007FH 0000BFH 000000H
Abstract: forty 32Kwords -8- K8S2815ET(B)E [Table 3] K8S2815ETE DEVICE BANK DIVISIONS Bank 0 1 2 3 4 5 6 7 , Rev. 1.0, Nov 2010 K8S2815ET(B)E 128Mb E-die NOR FLASH 44FBGA, 7.7x6.2, 0.5mm ball pitch 8M x16 , respective owners. 2009 Samsung Electronics Co., Ltd. All rights reserved. -1- K8S2815ET(B)E , Preliminary datasheet. - Specification is finalized. -2- K8S2815ET(B)E 128Mb E-die NOR FLASH 1 , . 40 -3- K8S2815ET(B)E datasheet NOR FLASH MEMORY 2.0 GENERAL DESCRIPTION Rev. 1.0 Samsung Electronics
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BA246

Abstract: BA139 K8A2815ET(B)M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode Configuration Register.(Refer to Table 7.) - Change the max. Vcc from 1.9V to 1.95V - Change the part number from K8S28158 to K8S2815E because of Vcc change. September 4, 2002 0.2 Revised - Change the
Samsung Electronics
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BA246 BA139 ba153 BA257 ba137 BA138 diode 00000FH 00001FH 00002FH A0-A22
Abstract: K8A2815ET(B)M FLASH MEMORY Document Title 128M Bit (8M x16) Synchronous Burst , Multi Bank NOR Flash Memory Revision History Revision No. History Draft Date 0.0 Preliminary June 28, 2002 0.1 Revised - Change the "Programmable Wait State" settings in Burst Mode Configuration Register.(Refer to Table 7.) - Change the max. Vcc from 1.9V to 1.95V - Change the part number from K8S28158 to K8S2815E because of Vcc change. September 4, 2002 0.2 September 25, 2002 Samsung Electronics
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K8S2815ET

Abstract: samsung nor flash die SLC K8S6415ET(B)C 64Mbit C die SLC K8S2815ET(B)C 128Mbit C die SLC , K8S6515ET(B)C K8S6415ET(B)C K8S2615ET(B)C K8S2715ET(B)C K8S2915ET(B)C K8S2815ET(B)C
Samsung Electronics
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128M-BIT K8F1215E 0x555 128-MBIT 0x55H UINT16

K9HCG08U5M

Abstract: K9WBG08U1M Time 70ns MCP Only K8S2815ET(B)B 8Mx 16 1.7-1,95V C,E Sync 66Mhz, Async 80ns 44FBGA K8P2815UQB 8Mx 16
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OCR Scan
K9HCG08U5M K9WBG08U1M K9LAG08U0M-PCB0 KMAFN0000M KMBGN0000A K9MDG08U5M-PCB0 120GB 128MB 256MB 512MB 256MC99

MX29GL256

Abstract: 28F512P30 Numonyx Contact factory for pin-compatible solutions. S29VS064R has 4 banks. K8S2815E-B 128 1.7-1.95 , has simplified command set. S29VS128R has 8 banks. Samsung K8S2815E-C 128 1.7-1.95 ­
Spansion
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MX29GL256 28F512P30 Numonyx M29W256G 28F00AP30 w25q128 MX25L6445 AT49SV163D S29AS016J EN29SL800 S29AS008J EN39SL800 EN29SL160