NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| K800 | STMicroelectronics | N-channel 30V - 0.006 Ohms - 20A - PolarPAK-R STripFET-TM Power MOSFET |
12 pages, |
Original |  |
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| K8006 | Velleman Instruments | BASE UNIT for HOME MODULAR LIGHT SYSTEM |
16 pages, |
Original | |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: Stabilität verwendet. Die Werkstoffe K40, K41, K250 und K800 sind zur Konstruktion schmalbandiger , stability. We recommend the use of materials K40, K41, K250 and K800 for narrow-band inductors and for a , Vorzugswerkstoffe für diese Applikation sind K14, K80, K250, K800, K2004 K2004 und K4000 K4000. Multi-aperture cores are , for this application are K14, K80, K250, K800, K2004 K2004, and K4000 K4000. Mehrlochkerne finden auch zum ... | Original |
16 pages, |
K300 ferrite K2004 THERMISTORS SCK 055 rm series ferrite core K2008 k250 soft ferrite handbook Transformer kaschke kaschke ferrite material K6000 impuls electromagnetic core k2004 k2500 equivalent k2500 datasheet abstract |
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| Abstract: NI100 NI100: K-800 ~ K1,700 PT1000 PT1000: K-1,800 ~ K8,000 NI1000 NI1000: K-800 ~ K1,700 PT100 PT100: K-2,920 ~ K14,720 , : -112°F ~ 338°F PT100 PT100: K-1,800 ~ K8,000 NI100 NI100: K-800 ~ K1,700 PT1000 PT1000: K-1,800 ~ K8,000 NI1000 NI1000: K-800 , ,800 ~ K8,000 NI100 NI100: K-800 ~ K1,700 PT1000 PT1000: K-1,800 ~ K8,000 NI1000 NI1000: K-800 ~ K1,700 PT100 PT100: K-2 ... | Original |
20 pages, |
C1604-1989 PT1000 KP 5,5 C1604 PT100 temperature sensor resolution F connector for K400 series Ni100 sensor ni1000 DIN 43760 PT1000 PT1000 table Ni1000 Ni100 KD 472 M mov Ni1000 temperature sensor 5011686600-E2P0 DVP-1130530-01 5011686600-E2P0 abstract |
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| Abstract: H'40E1 R/W Adjusted GAIN value of CH2 When voltage input, range: K-800 ~ K4,000. #26 H'40E2 R/W Adjusted GAIN value of CH3 When current input, range: K-800 ~ K2,600. #27 H'40E3 R/W Adjusted GAIN value , K0 CH1 ~ CH4 OFFSET LSB GAIN K-800 ~ K4,000 K-800 ~ K2,600 K0 LSB K-2,000 ~ K2,000 , b6 R/W CH3 GAIN K-800 ~ K4,000 K-800 ~ K2,600 #30 - OFFSET b15 b14 b13 b12 b11 ... | Original |
2 pages, |
K128 dvp06xa-h2 datasheet abstract |
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| Abstract: , K800) für Frequenzen von 100 kHz bis 10 MHz . mittel- bis hochpermeable ManganZink- Ferrite (K2005 K2005, K4000 K4000, K6000 K6000, K8000, K10000 K10000, K12000 K12000, K15000 K15000, K20000 K20000) . Mangan-Zink-Ferrite für die , K251, K800) for frequencies of 100 kHz up to 10 MHz . Medium/high permeable manganese-zinc ferrites (K2005 K2005, K4000 K4000, K6000 K6000, K8000, K10000 K10000, K12000 K12000, K15000 K15000, K20000 K20000) . Manganese-zinc ferrites for power , , K6000 K6000, K8000, K10000 K10000, K12000 K12000, K15000 K15000 K4000 K4000: Mangan-Zink-Ferrit mit einer Anfangspermeabilität von ... | Original |
45 pages, |
434G IC toroidal calculation 434e1 K10000 0 261 231 006 k2500 k4000 K6000 kaschke 094 Kaschke 317 100 604 004 toroidal core mT 427 KASCHKE K5500 kaschke ferrite material K250 datasheet abstract |
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| Abstract: C=150 V F=300 VH=500 V K=800 V B=100 V D=200 V G=400 V J=600 VM=1000 V (2) (3) : G = General , A=50 V C=150 V F=300 VH=500 V K=800 V B=100 V D=200 V G=400 V J=600 VM=1000 V (2) (3) : G = General , F=300 VH=500 V K=800 V B=100 V D=200 V G=400 V J=600 VM=1000 V (2) (3) : G = General Semiconductor , "x" "y" A=50 V C=150 V F=300 VH=500 V K=800 V B=100 V D=200 V G=400 V J=600 VM=1000 V (2) (3 , (2) ITO : (1) = "x" "y" A=50 V C=150 V F=300 VH=500 V K=800 V B=100 V D=200 V G=400 V ... | Original |
30 pages, |
V40100pg SMD DIODE UF4007 SL44 trr UGF10FCT ss2ph10 MUR120 SMD diode DGP30 b330la SMA UF4007 datasheet abstract |
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| Abstract: K-800 ~K4000 K4000 Current input: setting range is K-800 ~K2600 K2600 GAIN setting of CH5~CH6. Factory setting is K2000 K2000 and unit is LSB. The setting range is K-1600 K-1600~K8000 Data register stores the error status. Refer ... | Original |
2 pages, |
K4000 K2600 40D7 40C8 K1600 K4096 DATASHEET DVP-06XA DVP06XA-H K4096 datasheet abstract |
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| Abstract: K1000 K1000 and unit is LSB. Voltage input: setting range is K-800 ~K4000 K4000 Current input: setting range is K-800 ~K2600 K2600 GAIN setting of CH5~CH6. Factory setting is K2000 K2000 and unit is LSB. The setting range is K-1600 K-1600~K8000 Data register stores the error status, refer to fault code chart for details. RS-485 RS-485 ... | Original |
2 pages, |
40C8 D101 DVP-04 DVP-04AD DVP04AD-S DVP04TC K4096 DATASHEET K4096 DVP06XA-S instruction DVP-06XA DVP06XA-S DVP06XA-S abstract |
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| Abstract: : K-800 ~ K4,000 When current input, range: K-800 ~ K2,600 GAIN settings at CH5 ~ CH6. Range: K-1,600 ... | Original |
2 pages, |
IEC1131-2 DC24V 40C8 D100D dvp06xa-h2 datasheet abstract |
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| Abstract: type K800 with improved humidity resistance for temperature measurement in heat pumps. Delivery mode ... | Original |
10 pages, |
THERMISTORS 199 K501 K500 B57501K0682A002 K800 B57500K0103A001 B57500K B57501K B57500K abstract |
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| Abstract: stk8001 applications Order code Part number Marking Package Packaging STK800 STK800 K800 PolarPAK ... | Original |
13 pages, |
STK800 K800 JESD97 STK800 abstract |
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| Abstract: Edal SERIES T Silicon T03 Miniature Power Circuits Edal's Miniature power design offers optional configurations in one standard package. A sharp reduction in space requirements, simplified purchasing, reduced inventory, fewer lead connections and faster assembly by eliminating the need of soldering many diodes to achieve equivalent circuitry are substantial advantages. Low unit cost and increased reliability are proven results of Edal multiple circuits, now available in half wave, and cent ... | Original |
1 pages, |
edal 10 diode piv 10 datasheet abstract |
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| Abstract: NORP CdS PHOTOCONDUCTIVE CELLS SILONEXI FEATURES • Maximum power Dissipation @ 30°C: 250mW • Resistance Tolerance: ± 40% @ 1 Ftc • Temperature Range: - 60°C to + 75°C GENERAL DESCRIPTION The NORP series are highly stable, sensitive CdS photoconductive cells with a spectral response similar to that of the human eye. This series available in three resistance ranges, is packaged in a moisture resistant epoxy filled plastic casing. NORP-11 NORP-11,12, 13 SERIES Silonex Part No. Sensitive Material R ... | OCR Scan |
2 pages, |
silonex norp norp 12 photocell NORP PHOTOCONDUCTIVE NORP-12 Cds silonex NORP-13 NORP12 photoconductive cells Silonex NORP-11 NORP-11 abstract |
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| Abstract: Cutler-Hammer Molded Case Circuit Breakers 400-1200 Amperes January 2001 Vol. 1, Ref. No. [0561] 12-95 N-Frame Type ND Molded Case Switches Table 12-145. Type ND Molded Case Switches Continuous Ampere Rating @40°C 2-Pole Catalog Number Type ND - High Instantaneous (K) 800 3-Pole Catalog Number Price U.S.S _ 6,930.00 ND4800WK ND4800WK 8,080.00 HND4800WK HND4800WK - ND3800WK ND3800WK HND3800WK HND3800WK - 4-Pole ® Catalog Number Price U.S. $ - ND312WK ND312WK HND312WK HND312WK Pri ... | Original |
1 pages, |
29C106 HND3800WK ND3800WK t1000nb1 T700NB1 ND312WK TA1200NB1 Cutler-Hammer TA1000NB1 AL7CU TA1201NB1 AL9CU datasheet abstract |
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| Abstract: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# 2N6036 2N6036 Features · This device is designed for general purpose amplifier and low-speed switching applications. PNP Darlington Power Transistor Maximum Ratings* Symbol V CEO V CBO V EBO IC IB TJ TSTG Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current, Continuous Peak Base Current Operating Junction Temperature Storage Temperature Rating 80 8 ... | Original |
3 pages, |
datasheet abstract |
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| Abstract: SEME 2N2484CSM 2N2484CSM LAB HIGH SPEED, MEDIUM POWER, NPN GENERAL PURPOSE TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE FOR HIGH RELIABILITY APPLICATIONS MECHANICAL DATA Dimensions in mm (inches) FEATURES · SILICON PLANAR EPITAXIAL NPN TRANSISTOR 0.31 rad. (0.012) 3 2 · HERMETIC CERAMIC SURFACE MOUNT PACKAGE (SOT23 COMPATIBLE) 0.76 ± 0.15 (0.03 ± 0.006) 2.54 ± 0.13 (0.10 ± 0.005) 0.51 ± 0.10 (0.02 ± 0.004) 1 1.91 ± 0.10 (0.075 ± 0.0 ... | Original |
2 pages, |
2N2484CSM 2n2484 reliability data 2N2484 2N2484CSM abstract |
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| Abstract: EDAL INDUSTRIES INC EDAL MSE D SERIES â- 3QT571ti DODOam S â- EDL MINIATURE SILICON Series B silicon rectifiers meet moisture resistance requirements of MIL Standard 202A, Method 106 without the costly insulation required by glass-to-metal seal types. Smaller in size than other epoxy designs, the compact tubular construction and flexible leads facilitate circuit mounting and provide excellent thermal conductivity. Edal miniature silicon rectifiers offer stable uniform electrical characterist ... | OCR Scan |
2 pages, |
datasheet abstract |
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| Abstract: 2SD1509 2SD1509 NPN () 2SD1509 2SD1509 · : hFE = 2000 () (VCE = 2 V, IC = 1 A) · : mm : VCE (sat) = 1.5 V () (IC = 1 A, IB = 1 mA) (Ta = 25°C) · VCBO 80 V · VCEO 80 V · VEBO 8 V IC 2 A IB 0.5 A Ta = 25°C PC Tc = 25°C 1.5 10 W Tj 150 °C JEDEC Tstg ... | Original |
5 pages, |
2SD1509 D1509 2SD1509 abstract |
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| Abstract: 2SD2206 2SD2206 NPN () 2SD2206 2SD2206 · : hFE = 2000 () (VCE = 2 V, IC = 1 A) · : mm : VCE (sat) = 1.5 V () (IC = 1 A, IB = 1 mA) (Ta = 25°C) · VCBO 100 V · VCEO 100 V · VEBO 8 V IC 2 ICP 3 IB 0.5 A PC 900 mW DC A Tj 150 °C Tstg -55~150 °C J ... | Original |
4 pages, |
2SD2206 d2206 2SD2206 abstract |
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| Abstract | Saved from | Date Saved | File Size | Type | Download |
| Over 1.1 million files (1986-2013): html articles, reference designs, gerber files, chemical content, spice models, programs, code, pricing, images, circuits, parametric data, RoHS data, cross references, pcns, military data, and more. Please note that due to their age, these files do not always format correctly in modern browsers. Disclaimer. |
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| , controlled avalanche BYD17G BYD17G BYD17G BYD17G 400 BYD17J BYD17J BYD17J BYD17J 600 BYD17K 800 BYD17M BYD17M BYD17M BYD17M 1000 BYD37D BYD37D BYD37D BYD37D BYD37J BYD37J BYD37J BYD37J 600 BYD37K 800 300 BYD37M BYD37M BYD37M BYD37M 1000 BYD47-20 BYD47-20 BYD47-20 BYD47-20 2000 0.8 Fast recovery, controlled avalanche BYD57J BYD57J BYD57J BYD57J 600 BYD57K 800 75 BYD57M BYD57M BYD57M BYD57M 1000 BYD57V BYD57V BYD57V BYD57V www.datasheetarchive.com/files/philips/selectionguides/tables/41683-v2.html |
Philips | 13/06/2005 | 35.98 Kb | HTML | 41683-v2.html |
| PIN Diodes PIN Diodes DECT (1.9GHz) Transmit-Receive PIN-Diode Switch 118 K 800-1000MHz PIN-Diode Transmit-Receive Switch 46 K 1400-1600MHz PIN-Diode Transmit-Receive Switch 93 K GSM + PCN Dual-Band Transmit-Receive Switch 127 K DECT Transmit - Receive Switch Using Ultra Small PIN Diodes 80 K For any correspondence regarding www.datasheetarchive.com/files/infineon/products/35/35app5r.htm |
Infineon | 26/11/1998 | 2.11 Kb | HTM | 35app5r.htm |
| 17K 800 BYD17M BYD17M BYD17M BYD17M 1000 PRLL4001 PRLL4001 PRLL4001 PRLL4001 PRLL4001 PRLL4001 PRLL4001 PRLL4001 50 1.6 1.1 General purpose www.datasheetarchive.com/files/philips/selectionguides/tables/16840-v2.html |
Philips | 13/06/2005 | 8.45 Kb | HTML | 16840-v2.html |
| BYD37J BYD37J BYD37J BYD37J 600 BYD37K 800 300 BYD37M BYD37M BYD37M BYD37M 1000 BYD47-20 BYD47-20 BYD47-20 BYD47-20 2000 0.8 Fast, soft www.datasheetarchive.com/files/philips/selectionguides/tables/16925-v2.html |
Philips | 13/06/2005 | 10.72 Kb | HTML | 16925-v2.html |
| , controlled avalanche 1.5 200 1.05 BYD17G BYD17G BYD17G BYD17G 400 BYD17J BYD17J BYD17J BYD17J 600 BYD17K 800 .3 250 BYD37G BYD37G BYD37G BYD37G 400 BYD37J BYD37J BYD37J BYD37J 600 BYD37K 800 300 BYD37M BYD37M BYD37M BYD37M 1000 BYD47 BYD47 BYD47 BYD47 , controlled avalanche 1.0 400 1.0 3.6 30 BYD57J BYD57J BYD57J BYD57J 600 BYD57K 800 75 BYD57 BYD57 BYD57 BYD57 www.datasheetarchive.com/files/philips/selectionguides/tables/48016.html |
Philips | 13/06/2005 | 66.28 Kb | HTML | 48016.html |
| .1 1000 1 General purpose, controlled avalanche General purpose 1 S1K 800 www.datasheetarchive.com/files/philips/pip/s1_series_1-v1.html |
Philips | 14/02/2002 | 13.43 Kb | HTML | s1_series_1-v1.html |
| 13K 800 1 1.4 1 1 1.05 1.05 800 1.4 General purpose www.datasheetarchive.com/files/philips/pip/byd13_1-v1.html |
Philips | 14/02/2002 | 12.61 Kb | HTML | byd13_1-v1.html |
| fast, soft recovery, controlled avalanche BYD57J BYD57J BYD57J BYD57J 600 BYD57K 800 75 BYD57M BYD57M BYD57M BYD57M www.datasheetarchive.com/files/philips/selectionguides/tables/17079-v2.html |
Philips | 13/06/2005 | 23.06 Kb | HTML | 17079-v2.html |
| ' files and ensure that you have enough available disk space. We have found that approximately 400K-800K www.datasheetarchive.com/download/9613657-558557ZC/readme.doc |
National | 24/03/1996 | 9.22 Kb | DOC | readme.doc |
| ' files and ensure that you have enough available disk space. We have found that approximately 400K-800K www.datasheetarchive.com/download/33221460-558713ZC/readme.doc |
National | 16/03/1998 | 49 Kb | DOC | readme.doc |
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