K6R4004C1C-C K6R4004C1C-E K6R4004C1C-I K6R4004C1C-10 K6R4004C1C-12 - Datasheet Archive

 

PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial

 

K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I PRELIMINARY CMOS SRAM Document Title 1Mx4 Bit High Speed Static RAM(5V Operating). Operated at Extended and Industrial Temperature Ranges. Revision History Rev No. History Draft Data Remark Rev. 0.0 Initial release with Preliminary. Feb. 12. 1999 Preliminary Rev. 1.0 1.1 Removed Low power Version. 1.2 Removed Data Retention Characteristics 1.3 Changed I SB1 to 20mA Mar. 29. 1999 Preliminary Rev. 2.0 2.1 Relax D.C parameters. Aug. 19. 1999 Preliminary Mar. 27. 2000 Final Sep. 24. 2001 Final Item Previous 160mA 155mA 150mA 12ns 15ns 20ns ICC Current 190mA 185mA 180mA 2.2 Relax Absolute Maximum Rating. Item Voltage on Any Pin Relative to Vss Rev. 3.0 Previous -0.5 to 7.0 Current -0.5 to Vcc+0.5 3.1 Delete Preliminary 3.2 Update D.C parameters and 10ns part. 10ns 12ns 15ns 20ns ICC 190mA 185mA 180mA Previous Isb Isb1 70mA 20mA ICC 160mA 150mA 140mA 130mA Current Isb Isb1 60mA 10mA 3.3 Added Extended temperature range Rev. 4.0 Delete 20ns speed bin The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- Rev 4.0 September 2001 PRELIMINARY CMOS SRAM K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I 1M x 4 Bit (with OE)High-Speed CMOS Static RAM FEATURES GENERAL DESCRIPTION · Fast Access Time 10,12,15ns(Max.) · Low Power Dissipation Standby (TTL) : 60mA(Max.) (CMOS) : 10mA(Max.) Operating K6R4004C1C-10 K6R4004C1C-10 : 160mA(Max.) K6R4004C1C-12 K6R4004C1C-12 : 150mA(Max.) K6R4004C1C-15 K6R4004C1C-15 : 140mA(Max.) · Single 5.0V ±10% Power Supply · TTL Compatible Inputs and Outputs · I/O Compatible with 3.3V Device · Fully Static Operation - No Clock or Refresh required · Three State Outputs · Center Power/Ground Pin Configuration · Standard Pin Configuration K6R4004C1C-J K6R4004C1C-J : 32-SOJ-400 32-SOJ-400 The K6R4004C1C K6R4004C1C is a 4,194,304-bit high-speed Static Random Access Memory organized as 1,048,576 words by 4 bits. The K6R4004C1C K6R4004C1C uses 4 common input and output lines and has an output enable pin which operates faster than address access time at read cycle. The device is fabricated using SAMSUNGs advanced CMOS process and designed for highspeed circuit technology. It is particularly well suited for use in high-density high-speed system applications. The K6R4004C1C K6R4004C1C is packaged in a 400 mil 32-pin plastic SOJ. PIN CONFIGURATION (Top View) A0 K6R4004C1C-C10/C12/C15 K6R4004C1C-C10/C12/C15 K6R4004C1C-E10/E12/E15 K6R4004C1C-E10/E12/E15 Extended Temp. K6R4004C1C-I10/I12/I15 K6R4004C1C-I10/I12/I15 Industrial Temp. A19 31 A18 3 30 A17 A3 Commercial Temp. 32 2 A2 ORDERING INFORMATION 1 A1 4 29 A16 A4 28 A15 6 27 OE I/O1 7 26 I/O4 Vcc FUNCTIONAL BLOCK DIAGRAM 5 CS 8 25 Vss 24 SOJ Vcc A6 A7 A8 A9 I/O 1~I/O4 Row Select A2 A3 A4 A5 Data Cont. 22 A14 12 21 A13 13 20 A12 A7 14 19 A11 A8 Memory Array 1024 Rows 1024 x 4 Columns 11 A6 A0 A1 23 I/O3 WE Pre-Charge Circuit 9 10 A5 Clk Gen. Vss I/O2 15 18 A10 16 17 N.C A9 PIN FUNCTION I/O Circuit Column Select Pin Name A 0 - A 19 CLK Gen. Pin Function Address Inputs WE Chip Select OE A1 0 A1 2 A 14 A 1 6 A1 8 A11 A1 3 A1 5 A 17 A1 9 Write Enable CS Output Enable I/O1 ~ I/O 4 CS Data Inputs/Outputs V CC Power(+5.0V) WE V SS Ground OE N.C No Connection -2- Rev 4.0 September 2001 PRELIMINARY CMOS SRAM K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I ABSOLUTE MAXIMUM RATINGS* Parameter Symbol Power Dissipation -0.5 to VCC+0.5 V V CC Voltage on V CC Supply Relative to V SS Unit V I N, V OUT Voltage on Any Pin Relative to V SS Rating -0.5 to 7.0 V PD 1.0 W T STG Storage Temperature -65 to 150 °C TA 0 to 70 °C Extended TA -25 to 85 °C Industrial Operating Temperature TA -40 to 85 °C Commercial * Stresses greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operating sections of this spec ification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. RECOMMENDED DC OPERATING CONDITIONS* (T A=0 to 70°C) Parameter Symbol Min Typ Max Unit Supply Voltage V CC 4.5 5.0 5.5 V Ground V SS 0 0 0 V Input High Voltage V IH 2.2 - V CC+0.5* V Input Low Voltage V IL -0.5* - 0.8 V * The above parameters are also guaranteed at extended and industrial temperature range. * VIL (Min) = -2.0V a.c(Pulse Width 8ns) for I 20mA. * VIH (Max) = VC C + 2.0V a.c (Pulse Width 8ns) for I 20mA. DC AND OPERATING CHARACTERISTICS* (T A=0 to 70°C, Vcc=5.0V±10%, unless otherwise specified) Parameter Symbol Test Conditions Min Max Unit Input Leakage Current ILI V IN=V SS to V CC -2 2 µA Output Leakage Current ILO CS=VIH or OE=V IH or WE = VIL V OUT=V SS to V CC -2 2 µA Operating Current ICC Min. Cycle, 100% Duty CS=VIL, V I N= VIH or V IL, IOUT=0mA 10ns - 160 mA 12ns - 150 15ns - 140 10ns - 175 12ns - 165 15ns Com. Ext. Ind. - 155 ISB Min. Cycle, CS =VIH - 60 ISB1 f=0MHz, CSV CC-0.2V, V INV CC-0.2V or V IN0.2V - 10 Output Low Voltage Level V OL IOL =8mA - 0.4 V Output High Voltage Level V OH IOH=-4mA 2.4 - V - 3.95 V Standby Current V OH1* IOH1=-0.1mA mA * The above parameters are also guaranteed at extended and industrial temperature range. * VC C =5.0V±5%, Temp.=25°C. CAPACITANCE* (TA=25°C, f=1.0MHz) Item Symbol Test Conditions MIN Max Unit Input/Output Capacitance C I/O V I/O=0V - 8 pF Input Capacitance CIN V IN=0V - 7 pF * Capacitance is sampled and not 100% tested. -3- Rev 4.0 September 2001 PRELIMINARY CMOS SRAM K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I AC CHARACTERISTICS (TA=0 to 70°C, VCC =5.0V±10%, unless otherwise noted.) TEST CONDITIONS* Parameter Value Input Pulse Levels 0V to 3V Input Rise and Fall Times 3ns Input and Output timing Reference Levels 1.5V Output Loads See below * The above test conditions are also applied at extended and industrial temperature range. Output Loads(B) for tHZ, tLZ, tWHZ, tOW , tOLZ & tOHZ Output Loads(A) +5.0V R L = 50 DOUT 480 VL = 1.5V Z O = 50 D OUT 30pF* 255 * Capacitive Load consists of all components of the test environment. 5pF* * Including Scope and Jig Capacitance READ CYCLE* Parameter Symbol K6R4004C1C-10 K6R4004C1C-10 K6R4004C1C-12 K6R4004C1C-12 K6R4004C1C-15 K6R4004C1C-15 Min Max Min Max Min Max Unit Read Cycle Time tRC 10 - 12 - 15 - ns Address Access Time tAA - 10 - 12 - 15 ns Chip Select to Output tCO - 10 - 12 - 15 ns Output Enable to Valid Output tOE - 5 - 6 - 7 ns Chip Enable to Low-Z Output tLZ 3 - 3 - 3 - ns Output Enable to Low-Z Output tOLZ 0 - 0 - 0 - ns Chip Disable to High-Z Output tHZ 0 5 0 6 0 7 ns Output Disable to High-Z Output tOHZ 0 5 0 6 0 7 ns Output Hold from Address Change tOH 3 - 3 - 3 - ns Chip Selection to Power Up Time tPU 0 - 0 - 0 - ns Chip Selection to Power DownTime tPD - 10 - 12 - 15 ns * The above parameters are also guaranteed at extended and industrial temperature range. -4- Rev 4.0 September 2001 K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I PRELIMINARY CMOS SRAM WRITE CYCLE* Parameter K6R4004C1C-10 K6R4004C1C-10 K6R4004C1C-12 K6R4004C1C-12 K6R4004C1C-15 K6R4004C1C-15 Min Symbol Max Min Max Min Max Unit Write Cycle Time tWC 10 - 12 - 15 - ns Chip Select to End of Write tCW 7 - 8 - 10 - ns Address Set-up Time tAS 0 - 0 - 0 - ns Address Valid to End of Write tAW 7 - 8 - 10 - ns Write Pulse Width( OE High) tWP 7 - 8 - 10 - ns Write Pulse Width( OE Low) tWP1 10 - 12 - 15 - ns Write Recovery Time tWR 0 - 0 - 0 - ns Write to Output High-Z tWHZ 0 5 0 6 0 7 ns Data to Write Time Overlap tDW 5 - 6 - 7 - ns Data Hold from Write Time tDH 0 - 0 - 0 - ns End Write to Output Low-Z tOW 3 - 3 - 3 - ns * The above parameters are also guaranteed at extended and industrial temperature range. TIMING DIAGRAMS TIMING WAVEFORM OF READ CYCLE(1) (Address Controlled, CS=OE =VIL , WE=V IH) tRC Address tAA tOH Data Out Previous Valid Data Valid Data TIMING WAVEFORM OF READ CYCLE(2) (WE=V IH ) tRC Address tAA tCO CS tHZ(3,4,5) tOHZ tOE OE tOH tOLZ tLZ(4,5) Data out Valid Data V CC ICC Current ISB tPU tPD 50% 50% NOTES(READ CYCLE) 1. WE is high for read cycle. 2. All read cycle timing is referenced from the last valid address to the first transition address. 3. t HZ and t OHZ are defined as the time at which the outputs achieve the open circuit condition and are not referenced to VOH or V OL levels. 4. At any given temperature and voltage condition, tHZ (Max.) is less than tLZ (Min.) both for a given device and from device to device. 5. Transition is measured ±200mV from steady state voltage with Load(B). This parameter is sampled and not 100% tested. 6. Device is continuously selected with CS=V IL. 7. Address valid prior to coincident with CS transition low. 8. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycle. -5- Rev 4.0 September 2001 K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I TIMING WAVEFORM OF WRITE CYCLE(1) PRELIMINARY CMOS SRAM (OE= Clock) tWC Address tWR(5) tAW OE tCW(3) CS tAS(4) tWP(2) WE tDW tDH High-Z Data in Valid Data tOHZ(6) High-Z(8) Data out TIMING WAVEFORM OF WRITE CYCLE(2) ( O E=Low Fixed) tWC Address tAW tWR(5) tCW(3) CS tAS(4) tWP1(2) WE tDW Data in tDH High-Z Valid Data tWHZ(6) tOW High-Z(8) Data out (10) (9) TIMING WAVEFORM OF WRITE CYCLE(3) (CS=Controlled) tWC Address tAW tWR(5) tCW(3) CS tAS(4) tWP(2) WE tDW Data in High-Z Valid Data tLZ Data out tDH High-Z tWHZ(6) High-Z(8) High-Z -6- Rev 4.0 September 2001 K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I PRELIMINARY CMOS SRAM NOTES(WRITE CYCLE) 1. All write cycle timing is referenced from the last valid address to the first transition address. 2. A write occurs during the overlap of a low CS and WE. A write begins at the latest transition CS going low and WE going low ; A write ends at the earliest transition CS going high or WE going high. tW P is measured from the beginning of write to the end of write. 3. t CW is measured from the later of CS going low to end of write. 4. t AS is measured from the address valid to the beginning of write. 5. t WR is measured from the end of write to the address change. t WR applied in case a write ends as CS or WE going high. 6. If OE, CS and WE are in the Read Mode during this period, the I/O pins are in the output low-Z state. Inputs of opposite phase of the output must not be applied because bus contention can occur. 7. For common I/O applications, minimization or elimination of bus contention conditions is necessary during read and write cycl e. 8. If CS goes low simultaneously with WE going or after WE going low, the outputs remain high impedance state. 9. Dout is the read data of the new address. 10. When CS is low : I/O pins are in the output state. The input signals in the opposite phase leading to the output should not be applied. FUNCTIONAL DESCRIPTION CS WE OE Mode I/O Pin Supply Current H X X* Not Select High-Z ISB , ISB1 L H H Output Disable High-Z ICC L H L Read D OUT ICC L L X Write D IN ICC * X means Don t Care. -7- Rev 4.0 September 2001 PRELIMINARY CMOS SRAM K6R4004C1C-C K6R4004C1C-C, K6R4004C1C-E K6R4004C1C-E, K6R4004C1C-I K6R4004C1C-I PACKAGE DIMENSIONS Units:millimeters/Inches 32-SOJ-400 32-SOJ-400 11.18 0.440 #17 10.16 0.400 #32 ± 0.12 ± 0.005 9.40 ± 0.25 0.370 ± 0.010 0.20 #1 #16 0.008 +0.10 -0.05 +0.004 -0.002 0.69 MIN 0.027 21.36 MAX 0.841 20.95 ± 0.12 0.825 ± 0.005 1.30 ) 0.051 1.30 ( ) 0.051 ( ( 0.95 ) 0.0375 0.43 +0.10 -0.05 0.017 +0.004 -0.002 1.27 0.050 0.71 3.76 MAX 0.148 0.10 MAX 0.004 +0.10 -0.05 0.028 +0.004 -0.002 -8- Rev 4.0 September 2001