K5630 K5631 E107486 AC5000 - Datasheet Archive

 

K5630 · K5631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting DIMENSION (Unit : mm) Diodes and a

 

Photocoupler K5630 K5630 · K5631 K5631 These Photocouplers consist of two Gallium Arsenide Infrared Emitting DIMENSION (Unit : mm) Diodes and a Silicon NPN Phototransistor in a 6-pin package. FEATURES · Switching Time - Type 3 · Collector-Emitter Voltage : Min.35V · Current Transfer Ratio : Typ.10% (at IF= 10mA, VCE=10V) · Electrical Isolation Voltage : AC5000Vrms · Without Base Connection - K5630 K5630 · With Base Connection - K5631 K5631 · UL Recognized File No. E107486 E107486 PIN NO. AND INTERNAL CONNECTION DIAGRAM 6 5 4 K5630 K5630 APPLICATIONS 1 (Ta=25 ) Input Peak Forward Current Rating Unit IF *1 ±60 mA IFP ±1 A PD 70 mW Collector-Emitter Breakdown Voltage BVCEO 35 V Emitter-Collector Breakdown Voltage BVECO 6 V Collector-Base Breakdown Voltage* BVCBO 70 V Emitter-Base Breakdown Voltage* BVEBO 6 V IC 50 mA PC 150 mW Viso AC5000 AC5000 Vrms Storage Temperature Tstg -55~+125 Operating Temperature Topr -30~+100 Tsol 260 Ptot 200 mW Power Dissipation Output Collector Current Collector Power Dissipation Input to Output Isolation Voltage Lead Soldering Temperature *2 *3 Total Power Dissipation 4 2 K5631 K5631 Symbol Forward Current 3 5 1 MAXIMUM RATINGS Parameter 2 6 · Interface between two circuits of different potential · AC signal input · Telephone set & line interface · I/O compatible with integrated circuits * Except for K5630 K5630 *1. Input current with 100 pulse width, 1% duty cycle *2. Measured at RH=40~60% for 1min *3. 1/16 inch form case for 10sec 1/3 3 Photocoupler K5630 K5630 · K5631 K5631 ELECTRO-OPTICAL CHARACTERISTICS Parameter Input Symbol Condition Forward Voltage VF IF= Capacitance CT (Ta=25 , unless otherwise noted) Min. Max. Unit. Typ. V=0, f=1MHz 10mA - 1.15 1.30 V - 30 - pF 35 - - V Collector-Emitter Breakdown Voltage IC=1mA Emitter-Collector Breakdown Voltage Output BVCEO BVECO IE=0.1mA 6 - - V Collector-Base Breakdown Voltage * BVCBO IC=0.1mA 70 - - V Emitter-Base Breakdown Voltage * BVEBO IC=0.1mA 6 - - V Collector Dark Current ICEO IF=0, VCE=10V - - 100 nA Capacitance CCE VCE=0, f=10MHz - 10 - pF CTR IF= 10mA, VCE=10V 50 - 200 % VCE(SAT) Current Transfer Ratio *4 Collector-Emitter Saturation Voltage Coupled IF= 10mA, IC=0.5mA - - 0.4 V Input-Output Capacitance CIO V=0, f=1MHz - 2 - pF Input-Output Isolation Resistance RIO RH=40~60%, V=500V - 1011 - tr VCE=5V, RL=100 - 3 - tf IC=2mA - 3 - 0.33 - 3.0 Rise Time Fall Time CTR Symmetry CTR1/CTR2 * Except for K5630 K5630 *4. CTR=(IC/IF) X 100 (%) 2/3 Photocoupler K5630 K5630 · K5631 K5631 Collector Power Dissipation vs. Ambient Temperature Collector Power Dissipation P C (mW) 40 30 20 10 0 -20 0 20 40 60 100 80 250 100 200 80 150 100 50 0 -20 Ambient Temperature Ta ( ) Dark Current I CEO () Collector Current I C (mA) I F =20mA P C(max.) I F =10mA I F=5mA I F =1mA 0 60 80 2 4 6 8 10 VCE=10V 0 Collector Current I C (mA) tr 20 40 60 80 10 I F=10mA I F=5mA 1 I F =1mA 0 -20 100 0 tf 1 20 40 Switching Time Test Circuit R VIN VCC RL Ta=25 VCE=10V VO 10 1 Test Circuit 0.1 Input 0.01 Output 10% 0.1 0.1 1.0 Load Resistance R L () 2.0 0.001 0.1 80 60 Ambient Temperature T a ( ) Collector Current vs. Forward Current 500 VCE=5V I C=2mA Ta=25 100 1.6 I F=20mA Ambient Temperature Ta ( ) 100 1.2 Collector Current vs. Ambient Temperature 0.01 0.001 0.8 Forward Voltage VF (V) 0.1 Response Time vs. Load Resistance 10 Ta=-55 0.4 100 100 Collector-Emitter Voltage V CE (V) Response Time tr , t f (s) 40 20 I F=30mA 10 20 0 0 1 20 Ta=25 Dark Current vs. Ambient Temperature Ta=25 30 Ta=70 40 Ambient Temperature Ta ( ) Collector Current vs. Collector-Emitter Voltage 40 60 Collector Current I C (mA) Forward Current I F (mA) 50 Forward Current vs. Forward Voltage Forward Current I F (mA) Forward Current vs. Ambient Temperature 1 10 Forward Current I F (mA) 3/3 100 90% tr Waveform tf