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Part : K4S281632K-UC75000 Supplier : Samsung Semiconductor Manufacturer : Bristol Electronics Stock : 6 Best Price : - Price Each : -
Part : K4S281632K-UI75 Supplier : Samsung Semiconductor Manufacturer : Bristol Electronics Stock : 7 Best Price : - Price Each : -
Part : K4S281632K-UC75 Supplier : Samsung Semiconductor Manufacturer : Chip One Exchange Stock : 1,871 Best Price : - Price Each : -
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K4S281632K

Catalog Datasheet MFG & Type PDF Document Tags

K4S281632K-UC

Abstract: K4S281632K K4S281632K-UC/L60 8Mb x 16 8Mb x 16 54pin TSOP(II) Pb-free & Halogen-free*1 166MHz (CL=3) K4S281632K-UC/L75 LVTTL 200MHz(CL=3) Package 133MHz (CL=3) K4S281632K-UC/L50 Interface , uA 4 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632K-UC 4. K4S281632K-UL 5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ) 10 of 15 Rev. 1.2 , K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54
Samsung Electronics
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K4S281632KUC K4S280432K-U K4S28163 A10/AP

K4S280432K-U

Abstract: K4S281632K period is 64ms. 3. K4S281632K-UC 4. K4S281632K-UL 5. Unless otherwise noted, input swing IeveI is CMOS , =3) K4S281632K-UC/L50 8Mb x 16 200MHz(CL=3) K4S281632K-UC/L60 8Mb x 16 166MHz (CL=3) K4S281632K-UC , K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 , K4S280432K K4S280832K K4S281632K Synchronous DRAM Table of Contents 1.0 FEATURES , . 15 2 of 15 Rev. 1.21 March 2008 K4S280432K K4S280832K K4S281632K Synchronous DRAM
Samsung Electronics
Original

K4S281632K

Abstract: k4s281632k-uc : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632K-UC 4. K4S281632K-UL 5 , . Orgainization Max Freq. K4S280832K-U*1C/L75 16Mb x 8 133MHz (CL=3) K4S281632K-UC/L50 8Mb x 16 200MHz(CL=3) K4S281632K-UC/L60 8Mb x 16 166MHz (CL=3) K4S281632K-UC/L75 8Mb x 16 , K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II with , K4S280832K K4S281632K Synchronous DRAM Table of Contents 1.0 Features
Samsung Electronics
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k4s281632 K4S281632K-U

K4S281632K

Abstract: k4s281632k-ui with outputs open. 2. Refresh period is 64ms. 3. K4S281632K-UI 4. K4S281632K-UP 5. Unless otherwise , memory system applications. 3.0 Ordering Information Part No. Orgainization K4S281632K-UI/P60 8M x 16 K4S281632K-UI/P75 Max Freq. Interface Package LVTTL 54pin TSOP(II) Pb , Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification Industrial Temp. -40 , Synchronous DRAM K4S281632K Table of Contents 1.0 FEATURES
Samsung Electronics
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K4S2816

K4S281632K

Abstract: X2097 Notes : 1. Measured with outputs open. 2. Refresh period is 64ms. 3. K4S281632K-UI 4. K4S281632K-UP , memory system applications. 3.0 Ordering Information Part No. Orgainization K4S281632K-U*1I/P60 8M x 16 K4S281632K-UI/P75 Max Freq. 166MHz (CL=3) 133MHz (CL=3) Interface Package , Industrial Synchronous DRAM K4S281632K 128Mb K-die SDRAM Specification 54 TSOP-II with , March 2008 Industrial Synchronous DRAM K4S281632K Table of Contents 1.0 FEATURES
Samsung Electronics
Original
X2097

K4S280832K

Abstract: K4S281632K . 3. K4S281632K-UC 4. K4S281632K-UL 5. Unless otherwise noted, input swing IeveI is CMOS(VIH , 166MHz (CL=3) K4S281632K-UC/L75 8Mb x 16 Pb-Free 54pin TSOP(II) 133MHz (CL=3) K4S281632K-UC/L60 LVTTL 133MHz (CL=3) K4S280832K-UC/L75 Package 133MHz (CL=3) Organization , K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 , K4S280432K K4S280832K K4S281632K Synchronous DRAM Table of Contents 1.0 FEATURES
Samsung Electronics
Original
k4s280832k-uc K4S280832KUC

K4S280832

Abstract: K4S281632K-U . K4S281632K-UC 4. K4S281632K-UL 5. Unless otherwise noted, input swing IeveI is CMOS(VIH /VIL=VDDQ/VSSQ) 9 of , . K4S280432K-UC/L75 K4S280832K-UC/L75 K4S281632K-UC/L60 K4S281632K-UC/L75 Orgainization 32Mb x 4 16Mb x 8 8Mb x 16 , K4S280432K K4S280832K K4S281632K Synchronous DRAM 128Mb K-die SDRAM Specification 54 TSOP-II , K4S280832K K4S281632K Synchronous DRAM Year 2007 - Release revision 1.0 SPEC History Revision History Revision 1.0 Month February 2 of 14 Rev. 1.0 February 2007 K4S280432K K4S280832K K4S281632K
Samsung Electronics
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K4S280832

K4S641632k uc60

Abstract: K4S561632J-UC60 LVTTL K4S281632K 256Mb H-die Avail. 8M x 8 K4S280432K 4Banks Package 4M x 16 , 3.3 ± 0.3V Lead-free 54pin TSOP(II) EOL AUG.'08 128Mb K-die 4Banks K4S281632K U
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K4S641632k uc60 K4S561632J-UC60 K4S280832K-UC75 K4S511632D-UC75 K4S560832H K4S510832D-UC75 4K/64 8K/64 PC133 133MH 166MH 256MB

MBI5024

Abstract: dm13c CS56A12863 series N/ A IS42S16800D K4S281632K HY57V281620HGT N/ A N/ A -
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MBI5024 MBI5026 TB62706 A6276 MBI5167 DM115B dm13c macroblock MBI5024 MBI6030 K4S641632H CS18LV4096 CS8816 CS8826 DM134 DM135

k4B2G1646

Abstract: K4S561632N x 8 K4S281632K UC(L)50/C(L)60/C(L)75 8M x 16 4Banks 8M x 16 U*1C(L)75 UC(L)75 , 4K/64ms 3.3±0.3V 8M x 16 LVTTL 4K/64ms 3.3±0.3V 128Mb K-die 4Banks K4S281632K
Samsung Electronics
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k4B2G1646 K4S561632N K4B2G1646C k4t1g164qf K4T51163QI K4H641638Q 10MAX

K4S281632K

Abstract: samsung capacitance year code ( K4S281632K) * 8EA Component Package 54-TSOPII Height 1,250mil Operating Frequencies - 7A @CL3 , SDRAM, TSOPII SDRAM Part No. : K4S281632K Rev. 1.0 February 2007 Samsung Electronics
Samsung Electronics
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samsung capacitance year code 128MB M464S1724KUS-C M464S1724KUS

M464S1724KLS

Abstract: M464S (L)7A Density 128MB Organization 16M x 64 Component Composition 8Mx16( K4S281632K) * 8EA Component , : ±.006(.15) unless otherwise specified The used device is 8Mx16 SDRAM, TSOPII SDRAM Part No. : K4S281632K
Samsung Electronics
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M464S1724KLS M464S

K4S28163

Abstract: M464S1724 ( K4S281632K) * 8EA 54-TSOPII 1,250mil 2.0 Operating Frequencies 7A Speed @CL3 Speed @CL2 , ) unless otherwise specified The used device is 8Mx16 SDRAM, TSOPII SDRAM Part No. : K4S281632K 13 of
Samsung Electronics
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M464S1724

K9F2G08U0B

Abstract: K9HCG08U1M-PCB0 8Mx16 K4S281632K-UC(L)(75/60)000 54-TSOP 133/166 4K I-die changing to K-die
Samsung Semiconductor
Original
K9F2G08U0B K9HCG08U1M-PCB0 K9NCG08U5M-PCB0 K9F1G08U0C K9F4G08U0B-PCB0 K9F2G08U0B-PCB0 BR-09-ALL-001