500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : K4H560838CTCB0 Supplier : Samsung Semiconductor Manufacturer : ComSIT Stock : 40 Best Price : - Price Each : -
Part : K4H560838DTCB0 Supplier : Samsung Semiconductor Manufacturer : ComSIT Stock : 184 Best Price : - Price Each : -
Shipping cost not included. Currency conversions are estimated. 

K4H560838 Datasheet

Part Manufacturer Description PDF Type
K4H560838A-TCA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838A-TCA2 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838A-TCB0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838A-TLA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838A-TLA2 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838A-TLB0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B Samsung Electronics 256Mb DDR SDRAM Original
K4H560838B-TCA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B-TCA2 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B-TCB0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B-TLA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B-TLA2 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838B-TLB0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838C Samsung Electronics 256Mb DDR SDRAM Data Sheet Original
K4H560838C Samsung Electronics 256Mb C-die(x4/8) DDR SDRAM Original
K4H560838C-TCA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838C-TCA2 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838C-TCB0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838C-TLA0 Samsung Electronics 128Mb DDR SDRAM Original
K4H560838C-TLA2 Samsung Electronics 128Mb DDR SDRAM Original
Showing first 20 results.

K4H560838

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: NO : K4H560838D-GC## DRIVE_IC E DRIVE_IC D SAMSUNG YYWW C B A 0.157 Max (3.99 Max , YYWW SAMSUNG YYWW SAMSUNG YYWW K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### 0.118 (3.00) 5.077 , Min) A B A D SAMSUNG YYWW K4H560838*-G### B B B SAMSUNG YYWW K4H560838*-G### 0.10 M 0.7 0.78 (19.80) E E E E (17.80) 1.125 E B SAMSUNG YYWW K4H560838*-G### D Samsung Electronics
Original
M312L6423DG0 512MB M312L6423DG0-C

k4h560838 tccd

Abstract: K4H560838 SDRAM, FBGA DDR SDRAM Part NO : K4H560838D-GC## Rev. 1.0 Dec. 2002 184pin 1U Registered DDR , (131.350) 5.077 (128.950) PLL A K4H560838*-G### D B B (28.57) D B SAMSUNG YYWW K4H560838*-G### SAMSUNG YYWW K4H560838*-G### SAMSUNG YYWW K4H560838*-G### D B , K4H560838*-G### E D B (2.30 Min) B B B D SAMSUNG YYWW K4H560838*-G### SAMSUNG YYWW E B B B 0.100 Min B K4H560838*-G### E D B SAMSUNG YYWW K4H560838*-G###
Samsung Electronics
Original
k4h560838 tccd K4H560838D 166MH 133MH 8K/64

k4h560838 tccd

Abstract: DDR SDRAM Part NO : K4H560838D-GC## Detail B 0.10 M C A M B Rev. 0.0 July. 2002 , ) E G G L SAMSUNG YYWW K4H560838*-G### 0.118 (3.00) 5.077 (128.950) H H PLL H G T G E SAMSUNG YYWW E K4H560838*-G### SAMSUNG YYWW SAMSUNG YYWW SAMSUNG YYWW SAMSUNG YYWW SAMSUNG YYWW SAMSUNG YYWW SAMSUNG YYWW K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### K4H560838*-G### (10.00) 0.393
Samsung Electronics
Original
M312L3223DG0 256MB M312L3223DG0-C M312L3223DG

k4h560838 tccd

Abstract: Part NO : K4H560838D-GC## Rev. 1.0 Dec. 2002 184pin 1U Registered DDR SDRAM Module , B (28.57) 0.7 EEPROM-LV TSSOP B (17.80) 1.125 W K4H560838*-G### E SAMSUNG YYWW K4H560838*-G### E SAMSUNG YYWW E K4H560838*-G### K4H560838*-G### E SAMSUNG YYWW K4H560838*-G### SAMSUNG YYWW K4H560838*-G### SAMSUNG YYWW K4H560838*-G### K4H560838*-G### SAMSUNG YYWW SAMSUNG YYWW E G E DRIVE_IC E DRIVE_IC 0.78 (19.80
Samsung Electronics
Original

Irvine Sensors Corporation

Abstract: K4H560838 TSOPs but these stacks can be manufactured using customer furnished TSOPs from a variety of
-
Original
Irvine Sensors Corporation ISDD64M8STC AP/A10

msm-561

Abstract: TC5118160 Siemens TC59SM804 - HYB39S256400 - Toshiba SDRAM K4H560838 HYB39S256800 -
-
Original
HY514260 HY514264 msm-561 TC5118160 TMS444000 msm561 M5M418165 M5M418160 MB81C100 MB81C4256 GM71C100 GM71C4256 HM511000 HM514256
Abstract: device is 32Mx8 SDRAM, TSOP. SDRAM Part NO : K4H560838C-TC Rev. 0.0 Sep. 2001 Samsung Samsung Electronics
Original
M368L6423CT1 M368L6423CT1-C 167MH 100MH

k4h561638f-tc

Abstract: K4H561638 (DDR266@CL=2.5) K4H560838F-TC/LB3 B3(DDR333@CL=2.5) K4H560838F-TC/LAA K4H560838F-TC/LA2 32M x 8 AA(DDR266@CL=2) A2(DDR266@CL=2) K4H560838F-TC/LB0 B0(DDR266@CL=2.5) Operating Frequencies , (K4H560838F) and speed AA Rev. 1.1 August. 2003 DDR SDRAM 256Mb F-die (x8, x16) DDR SDRAM Key , Banks / 4M x 16Bit x 4 Banks Double Data Rate SDRAM General Description The K4H560838F / K4H561638F is , (VDD=2.7V, T = 10°C) 32Mx8 (K4H560838F) Symbol B3(DDR333@CL=2.5) AA(DDR266@CL=2.0) A2
Samsung Electronics
Original
k4h561638f-tc K4H561638 K4H561638F-TC/LB3 K4H561638F-TC/LAA K4H561638F-TC/LA2 K4H561638F-TC/LB0 K4H560838F-TC/LB3

DDR333

Abstract: DDR400 x 4 Banks Double Data Rate SDRAM General Description The K4H560838F / K4H561638F is 268,435,456
Samsung Electronics
Original
DDR400 200MH K4H561638F-GCCC K4H561638F-GCC4

K4H560838E

Abstract: M312L6420ETS-CAA Component Composition Height M383L3223ETS-CAA/A2/B0/A0 256MB 32M x 72 32Mx8( K4H560838E) * 9EA 1,700mil M383L6423ETS-CAA/A2/B0/A0 512MB 64M x 72 32Mx8( K4H560838E) * 18EA 1 , /B0/A0 256MB 32M x 72 32Mx8( K4H560838E) * 9EA 1,200mil M312L6423ETS-CAA/A2/B0/A0 512MB 64M x 72 32Mx8( K4H560838E) * 18EA 1,200mil M312L6420ETS-CAA/A2/B0/A0 512MB 64M , Part No : K4H560838E Revision 1.4 February, 2004 256MB, 512MB, 1GB Registered DIMM DDR SDRAM
Samsung Electronics
Original
M312L6420ETS-CAA M383L6420ETS-CAA/A2/B0/A0 K4H560438E M383L2828ET1-CAA/A2/B0/A0 K4H510638E M312L3223ETS-CAA/A2/B0/A0 M312L2

DDR400

Abstract: K4H561638D otherwise specified. The used device is 32Mx8 DDR SDRAM, TSOP. DDR SDRAM Part NO : K4H560838D. Rev. 1.2 , ( K4H560838D) * 8EA 1,250(mil) M368L6423DTM-C(L)CC/C4 512MB 64M x 64 32Mx8( K4H560838D) * 16EA 1,250(mil) M381L3223DTM-C(L)CC/C4 256MB 32M x 72 32Mx8( K4H560838D) * 9EA 1,250(mil) M381L6423DTM-C(L)CC/C4 512MB 64M x 72 32Mx8( K4H560838D) * 18EA 1,250(mil) Operating Frequencies , used device is 32Mx8 DDR SDRAM, TSOP. DDR SDRAM Part NO : K4H560838D Rev. 1.2 May. 2003
Samsung Electronics
Original
K4H561638D 128MB M368L1624DTM-C M368L3223DTM-C M368L6423DTM M381L6423DTM

K4H560838B-TCB0

Abstract: K4H560438B-TCA2 K4H560438B-TCA0 K4H560438B-TLA2 K4H560838B-TCA0 K4H560838B-TLB0 K4H560838B-TLA0 K4H561638B-TCA2 K4H561638B-TCB0 K4H561638B-TCA0 K4H561638B-TLA2 16Mx16 K4H560438B-TLA0 K4H560838B-TCB0 K4H560838B-TLA2 32Mx8 K4H560438B-TLB0 K4H560838B-TCA2 K4H561638B-TLB0 K4H561638B-TLA0 1 2
Samsung Electronics
Original
K4H560438B-TCA2 K4H560438B-TCB0

M368L6423BT1

Abstract: PC200 SDRAM, TSOP. SDRAM Part NO : K4H560838A-TC Rev. 0.8 Nov. 2000 Samsung Electronics
Samsung Electronics
Original
M368L6423BT1 PC200

samsung ddr3 ram MTBF

Abstract: KLMAG2GE4A-A001 /400 64Mx4 K4H560438N-LCB3/B0 66-TSOP 266/333 32Mx8 K4H560838N-LCCC/B3 66
Samsung Semiconductor
Original
samsung ddr3 ram MTBF KLMAG2GE4A-A001 KLMAG KLM4G1FE3B-B001 KLM8G2FE3B-B001 KLM2G1HE3F-B001 BR-12-ALL-001

DDR266A

Abstract: M368L6423BT1 SDRAM, TSOP. SDRAM Part NO : K4H560838B Rev. 1.0 Dec. 2001 Samsung Electronics
Samsung Electronics
Original
DDR266A
Abstract: Information Part No. Org. K4H560838D-TCCC 32M x 8 K4H560838D-TCC4 Max Freq. CC(DDR400@CL , x 4 Banks / 4M x 16Bit x 4 Banks Double Data Rate SDRAM General Description The K4H560838D Intel
Original
Abstract: Organization 64Mx4 133Mhz w/ CL=2 K4H560438B-TCA2 K4H560438B-TLA2 32Mx8 K4H560838B-TCA2 K4H560838B-TLA2 16Mx16 K4H561638B-TCA2 K4H561638B-TLA2 133Mhz w/ CL=2.5 K4H560438B-TCB0 K4H560438B-TLB0 K4H560838B-TCB0 K4H560838B-TLB0 K4H561638B-TCB0 K4H561638B-TLB0 100Mhz w/ CL=2 K4H560438B-TCA0 K4H560438B-TLA0 K4H560838B-TCA0 K4H560838B-TLA0 Samsung Electronics
Original
A10/AP
Abstract: : K4H560838A-TC Rev. 0.9 June. 2001 Samsung Electronics Samsung Electronics
Original
KMM368
Abstract: : K4H560838C Rev. 0.2 Jan. 2002 (17.80) 0.145 Max (3.67 Max) 0.7 Samsung Electronics Samsung Electronics
Original
M381L6423CTL DDR266B DDR200 DDR200/266

CL25

Abstract: K4H560438D-TC/LB0 K4H560438D-TC/LA0 K4H560838D-TC/LB3 K4H560838D-TC/LA2 K4H560838D-TC/LB0 K4H560838D-TC/LA0 , IDD2F IDD2Q IDD3P IDD3N IDD4R IDD4W IDD5 IDD6 Normal Low power IDD7A K4H560838D-TC/LB3 (DDR333) 90 120 3 25 20 35 55 170 170 180 3 1.5 325 K4H560838D-TC/LA2, CB0 (DDR266A/B) 80 110 3 20 18 30 45 140 140 165 3 1.5 280 K4H560838D-TC/LA0 (DDR200) 75 100 3 18 16 25 40 120 115 150 3 1.5 235 (VDD=2.7V, T = 10 , Cap(max) 0.5 0.25 Unit pF pF pF - 13 - Rev.0.3 Apr. ' 02 K4H560838D 8M x 8Bit x 4 Banks
Samsung Electronics
Original
CL25 4K/64 K4H560438D-TC/LB3 K4H560438D-TC/LA2 K4H560838D-TC/LB3 K4H560838D-TC/LA2 K4H560838D-TC/LB0
Showing first 20 results.