K1109 QW-R206-009 - Datasheet Archive

 

JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 DESCRIPTION 2 The UTC K1109 is N-channel JFET

 

UTC K1109 K1109 JUNCTION FIELD EFFECT TRANSISTOR N-CHANNEL JFET FOR ELECTRET CONDENSER MICROPHONE 1 DESCRIPTION 2 The UTC K1109 K1109 is N-channel JFET for electret condenser microphone. FEATURES 3 *High gm implies low transfer loss *Built-in gate-source diode and resistor implies fast power on settling time TOP VIEW SOT-23 1: SOURCE 2: DRAIN 3: GATE ABSOLUTE MAXIMUM RATINGS ( Operating temperature range applies unless otherwise specified ) PARAMETER SYMBOL VALUE UNIT VDSX VGDO ID IG PT Tj TSTG 20 -20 10 10 80 125 -55 ~ +125 V V mA mA mW °C °C Drain-Source Voltage Gate-Drain Voltage Drain Current Gate Current Total Power Dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER Drain Current Gate Off Voltage Forward Transfer Admittance Forward Transfer Admittance Input Capacitance Noise Voltage SYMBOL TEST CONDITIONS MIN IDSS VDS=5.0V,VGS=0 VDS=5.0V,ID=1.0µA VDS=5.0V,ID=30µA,f=1kHz VDS=5.0V, VGS=0,f=1kHz VDS=5.0V,VGS=0,f=1.0MHz 40 -0.1 350 350 VGS(OFF) lYFS1l lYFS2l Ciss NV TYP UNIT 600 -1.0 480 1600 7.0 1.8 MAX µA V µS µS pF V 8.0 3.0 CLASSIFICATION OF IDSS RANK J34 J35 J36 RANGE 90-180 150-300 200-450 UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R206-009 QW-R206-009,A UTC K1109 K1109 JUNCTION FIELD EFFECT TRANSISTOR NOISE VOLTAGE TEST CIRCUIT +4.5V 1K FILTER NV r.m.s. 10pF UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R206-009 QW-R206-009,A