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TL051IP Texas Instruments Enhanced JFET Precision Operational Amplifier 8-PDIP visit Texas Instruments
TL080CP Texas Instruments JFET-Input Operational Amplifier 8-PDIP 0 to 70 visit Texas Instruments
TL081CPE4 Texas Instruments JFET-Input Operational Amplifier 8-PDIP 0 to 70 visit Texas Instruments
TL081IDRG4 Texas Instruments JFET-Input Operational Amplifier 8-SOIC -40 to 85 visit Texas Instruments
TL082CP Texas Instruments JFET-Input Operational Amplifier 8-PDIP 0 to 70 visit Texas Instruments Buy

Junction FETs JFETs

Catalog Datasheet MFG & Type PDF Document Tags

p channel depletion mosfet

Abstract: list of n channel fet devices (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently , . Junction FETs In its most elementary form, this transistor consists of a piece of high-resistivity , twice as efficient conductors compared to their p-channel counterparts. FETs Junction , current saturation region. JFETs operating in the current satura- In summary, a junction FET consists
Temic Semiconductors
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P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxidesemiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , twice as efficient conductors compared to their p-channel counterparts. FETs Junction
Temic Semiconductors
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P-Channel Depletion Mode FET P-Channel Depletion Mosfets P-Channel Depletion Mode Field Effect Transistor n channel depletion MOSFET P-Channel Depletion mosFET N-Channel JFET FETs

P-Channel Depletion Mosfets

Abstract: shockley diode AN101 An Introduction to FETs The family tree of FET devices (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide- semiconductor field-effect transistors). Junction FETs are inherently depletion-mode devices, and are available in both n , of both polarities (majority and minority) are involved. Junction FETs This Application Note , twice as efficient conductors compared to their p-channel counterparts. FETs Junction
Siliconix
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shockley diode shockley diode application shockley diode datasheet list of n channel fet jfet idss 10 ma vp -3 diode shockley

P-Channel Depletion Mode FET

Abstract: p channel depletion mosfet (Figure 1) may be divided into two main branches, Junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metaloxide semiconductor fieldeffect transistors). Junction FETs are inherently depletionmode , depend on different phenomena for their operation, and will be discussed separately. Junction FETs , twice as efficient conductors compared to their pchannel counterparts. FETs Junction Enhancement , AN101 Siliconix An Introduction to FETs Introduction The basic principle of the fieldeffect
Temic Semiconductors
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p channel depletion mosfet an101 siliconix JFETs Junction FETs Junction FETs JFETs Depletion MOSFET n mosfet depletion

tm003 transformer

Abstract: The Modern Armstrong Regenerative Receiver using bipolar transistors as well as junction FETs (JFETs) and insulated-gate FETs (IGFETs or MOSFETs). , . Really too big for our purposes. The gate-source junction would be also vulnerable to very strong , would be needed to overcome the gate-source bias and make the corresponding junction to conduct , circuit, although no explanation has been found for this. The modulation is extracted from the junction
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tm003 transformer The Modern Armstrong Regenerative Receiver tm003 J310 jfet 1nF mylar capacitor TM003

Junction FETs JFETs

Abstract: "Junction FETs, JFETs" have relatively high offset voltages, junction, FETs (JFETs) are used for high-performance
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OCR Scan
OP-37 matched pair JFET OP27 AD549 AD705 AN-360

Analog Devices differential Opamp

Abstract: matched pair JFET voltages, junction FETs (JFETs) are used for high-performance low-bias-current op amps. A typical JFET
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OCR Scan
Analog Devices differential Opamp jfet differential transistor characteristics of op-amp jfet having voltage gain jfet

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion-Mode (Figure 1) may be divided into two main branches, junction FETs (JFETs) and Insulated Gate FETs (or MOSFETs, metal-oxide-silicon field-effect transistors). Junction FETs are inherently depletion-mode , Silicon ix incorporated 6-1 Junction FETs In its most elementary version, this transistor consists of a , N-Channel FETs tend to be more efficient conductors than their P-Channel counterparts. Junction FETs are , s Siliconix APPLICATION NOTE An Introduction to FETs INTRODUCTION The basic principle of the
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OCR Scan
P-Channel Depletion-Mode FET E202 2N3631 2N3823 2N2606 2N3329

siliconix fet

Abstract: Transistor E112 FET N-Channel active area â'" the complete line of Siliconix junction FETs. To give you an idea how this guide works , and P-Channel Single AN73-7 An Introduction to FETs
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siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals E112 jfet JFET BFW10 SPECIFICATIONS 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

P-Channel Depletion Mode FET

Abstract: P-Channel Depletion Mosfets covers the full range of FET applications. Included here is a wide variety of junction FETs, MOSFETs (with P- or N-channel polarity with both single and dual gates) and TMOS FETs. These FETs include , on many typical FETs. N-CHANNEL P-Channel JFETs V(BR)GSS Clss 'on 'off rds(on) vGS , applications. Package options JFETs from low cost plastic to metal TO-72 packages are available. The selector , consideration for new equipment design. JFETs ° P-CHANNEL TABLE 1. Switches and Choppers JFETs operate in
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OCR Scan
MPF970 MPF971 2N4859A 2N4856A 2N4856 N4859 2N4391 MOTOROLA MPF4091 2N4091 N3993 N3994

e304 fet

Abstract: JFET TRANSISTOR REPLACEMENT GUIDE j201 . 2-1 Using JFETs as Front-End Devices for Op A m p s .2-2 Compare Using JFETs as Front-End Devices. 2-2 JFETs as Front-End Devices with a BiFET Op A m p .2-2 Using FETs as Analog Switches .2-3 Using JFETs as D iodes , Characteristics of Junction Fets .7-39 Differential JFET
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e304 fet e420 dual jfet BFW10 JFET jfet e300 Siliconix FET Design Catalog JFET TIS88 K28742 44449SILXHX
Abstract: Philips Semiconductors Preliminary specification P-channel junction FETs 2N5460; 2N5461; 2N5462 DESCRIPTION P-channel silicon junction FET in a TO-92 plastic envelope. Intended for use as , /5461/5462 P-channel J-FETs LIMITING VALUES In accordance with the Absolute Maximum System (IEC , storage temperature range -65 150 "C Ti junction temperature - 150 °C ±VdS , PARAMETER from junction to ambient R t h j- a K/W MGA004 400 P tot (m W ) 300 200 100 -
OCR Scan
2N5460/5461/5462 N5462 N5460

BC547 sot package sot-23

Abstract: BC337 BC547 Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola , plastic and metal­can semiconductors. A large selection of encapsulated plastic transistors, FETs and , . . . . . . . . . . . . . 5.1­20 JFETs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . , 5.1­22 Surface Mount FETs . . . . . . . . . . . . . . . . . . . . . . . . 5.1­23 Tuning and Switching Diodes . . . . . . . . . . . . . . . . . . . 5.1­25 Tuning Diodes - Abrupt Junction . . . . . . . . . .
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BC547 sot package sot-23 BC337 BC547 2N2484 motorola zt751 MSB81T1 pin configuration NPN transistor BC547 sot-23 226AA 226AE 70/SOT MMBF2202PT1 MMBF2201NT1 MDC5000T1

TC7SZ08FU

Abstract: lm2804 Junction FETs (J-FETs) S-MINI USM Polarity (SOT-346) (SOT-323) (SC-59) (SC-70) SMV (SOT-25) (SC
Toshiba
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TC7SZ08FU lm2804 TC7S14F sot-24 led TC7SZ126FU TC7SZ125FU 3407C-0209

BC337 BC547

Abstract: MSB81T1 Transistors, FETs and Diodes 5.1­18 Motorola Master Selection Guide Field­Effect Transistors JFETs , , FETs and Diodes JFETs (continued) Table 32. JFET Switches and Choppers The following is a , 3 SOT­223 Table 34. Surface Mount RF JFETs The following is a list of surface mount FETs which , General­Purpose JFETs The following table is a listing of surface mount small­signal general purpose FETs. These , Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola
Motorola
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MBT3904DW9T1 MVAM115 transistor 2N4125 automatic stabilizer circuit diagram range 210 to 250 volts marking 6AA SOD MBT3904DW9 206AA 205AD MDC3105LT1

fet vcr compatible

Abstract: application note jfet J111 transistor AN105 FETs As VoltageControlled Resistors Introduction: The Nature of VCRs A voltagecontrolled , of the terminals is controlled by a voltage potential applied to the third. For a junction , nchannel JFETs and positively for pchannel), the resistance will also increase. When the drain current is , ) VDS = VGS - VGS(off) Region 1 Resistance Properties of FETs The unique resistancecontrolling properties of FETs can be deduced from Figure 2, which is an expandedscale plot of the encircled area in
Temic Semiconductors
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SST111 2N5486 SST5486 PN4119A SST4119 fet vcr compatible application note jfet J111 transistor jfet transistor for VCR Siliconix "fet" Siliconix JFET application note transistor jfet

MMBF4856

Abstract: pin configuration NPN transistor BC547 sot-23 Small Signal Transistors, FETs and Diodes JFETs (continued) Table 32. JFET Switches and Choppers , Small Signal Transistors, FETs and Diodes In Brief . . . New in this revision is Motorola , plastic and metal­can semiconductors. A large selection of encapsulated plastic transistors, FETs and , 5.1­17 Field­Effect Transistors . . . . . . . . . . . . . . . . . . . . . . . . 5.1­19 JFETs . . . . . , . . . . . . . . . . . . . . . . . . . . . . . 5.1­21 Surface Mount FETs . . . . . . . . . . . . . .
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MMBF4856 BC337/BC327 MPS6595 t6661 bipolar transistor bc107 motorola surface mount marking code data book MMBD1000LT1 MMBD1005LT1 MMBD1010LT1 MMBD2000T1 MMBD2005T1 MMBD2010T1

application note jfet J111 transistor

Abstract: datasheet jfet J111 transistor AN105 FETs As VoltageControlled Resistors Introduction: The Nature of VCRs A , between two of the terminals is controlled by a voltage potential applied to the third. For a junction , n-channel JFETs and positively for p-channel), the resistance will also increase. When the drain current , nchannel JFET. Most amplification or switching operations of FETs occur in the constant-current (saturated , . Resistance Properties of FETs The unique resistance-controlling properties of FETs can be deduced from
Siliconix
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datasheet jfet J111 transistor VCR4N 2N5486 vcr N CHANNEL jfet Siliconix N-Channel JFET Siliconix N-Channel JFETs

fet vcr compatible

Abstract: jfet J111 transistor AN105 Siliconix FETs As VoltageControlled Resistors A voltagecontrolled resistor (VCR) may , terminals is controlled by a voltage potential applied to the third. For a junction fieldeffect transistor , to zero volts (VGS = 0). If the gate voltage is increased (negatively for nchannel JFETs and , nchannel JFET. Most amplification or switching operations of FETs occur in the constantcurrent (saturated , . Resistance Properties of FETs The unique resistancecontrolling properties of FETs can be deduced from
Temic Semiconductors
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jfet J111 transistor J111

N CHANNEL jfet Low Noise Audio Amplifier

Abstract: jfet n channel ultra low noise AN106 Low-Noise JFETs - Superior Performance to Bipolars D Introduction Junction field , frequency performance of JFETs versus bipolars. ­ Curves comparing noise current and voltage. ­ , low-noise JFETs, it increases approximately 3 dB per octave in bipolars starting below 100 Hz. Thermal , 2. Characteristics of Junction FET Noise Describing Junction FET Noise Characteristic Junction , channel junction. It is defined as 4kTB Rp (4) where Rp is the real part of the
Siliconix
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N CHANNEL jfet Low Noise Audio Amplifier jfet n channel ultra low noise Siliconix JFETs Dual Siliconix AN106 Siliconix JFET Dual transistor equivalent table chart
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