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JESD22-A115-A

Catalog Datasheet MFG & Type PDF Document Tags

JESD22-A115-A

Abstract: JESD22-A115A . The following precautions should be taken: Reference: JESD22-A114-C JESD22-A115-A Results 700V , HSMP-386Z ESD Test Human Body Model Machine Model Reference: JESD22-A114-C JESD22-A115-A , : JESD22-A114-C JESD22-A115-A Results 450V (Class 1A) 160V (Class A) HBM Class 0 is ESD voltage level
Avago Technologies
Original
HSMP-389Z JESD22-A113-D JESD22-A115A JESD22-A113D 7809 ct JESD22-A114C JESD22A115A HSMP-381Z AV01-0050EN

JESD22-A115-A

Abstract: JESD22-A115A 1000V (Class 1B) Machine Model JESD22-A115-A 60V (Class A) ESD Test Reference: Results Human Body Model JESD22-A114-C 200V (Class 0) Machine Model JESD22-A115-A , Model JESD22-A115-A
Avago Technologies
Original
HSMS-282Y HSMS-285Y HSMS-286Y HSMP-282Y JESD22-A114 schottky diode FIT transistor A114 all silicon based diode List HSMP-285Y HSMP-286Y AV01-0356EN

JESD22-A115A

Abstract: JESD22-A115 JESD22-A115-A and discharge Times is ESD STM5.2-1999 ELECTRONICS TESTING CENTER, TAIWAN Report No.: 08-11 , particular sensitivity classification.(JESD22-A115-A) Criteria meet: Class C Any part that passes after
Electronics Testing Center
Original
JESD22-A115 capacitor huang stm521999 08-11-MAS-003-02 RO3104A ISO9001

JESD22-A114-B

Abstract: EIA/JESD22-A115-A Model EIA/JESD22-A115-A 45 V (Class A) Table 4B. Electrostatic Discharge (ESD) test results , ) Charged Device Model Machine Model EIA/JESD22-C101 EIA/JESD22-A115-A Class A Class A The ESD
Agilent Technologies
Original
MGA-71543 MGA-72543 EIA/JESD22-A115-A JESD22-A113-B JESD22-A114-B MGA71543 JESD22-A113B JESD22-A114B C/150 EIA/JESD22-A114-B

A114E

Abstract: capacitor huang discharge times are according in standard JESD22-A115-A Classification Criteria All samples used must , classified as meeting a particular sensitivity classification.(JESD22-A115-A) Criteria meet: Class C Any
Electronics Testing Center
Original
A114E JESD22-A114E 09-03-MAS-130-01 SF1143B-2

JESD22-A114-B

Abstract: EIA/JESD22-A115-A ESD Test Reference: Human Body EIA/JESD22-A114-B Model Machine EIA/JESD22-A115-A Model ABA 32563 ESD Test Reference: Human Body EIA/JESD22-A114-B Model Machine EIA/JESD22-A115-A Model
Avago Technologies
Original
JESD22A114-B JESD22-A113 A114 transistor aba data sheet JESD22A114B 1 HP25 ABA-31563/32563 JESD22-A113-A 5989-1020EN

JESD22-A114-A

Abstract: JESD22-A114A /JESD22-A115-A Do not exceed 25 V (Class A) Table 5B. Electrostatic Discharge (ESD) Test Results: ATF , (Class 1) Machine Model EIA/JESD22-A115-A Do not exceed 40 V (Class A) Notes: Class 1 is ESD
Agilent Technologies
Original
ATF-541M4 JESD22-A114-A JESD22-A114A JESD22A114-A ATF-551M4 MGA-725M4 ATF-551M4/541M4 EIA/JESD22-A114-A 5988-4696EN

capacitor huang

Abstract: JESD22-A115-A discharge times are according in standard JESD22-A115-A Classification Criteria All samples used must , classified as meeting a particular sensitivity classification.(JESD22-A115-A) Criteria meet: Class C Any
Electronics Testing Center
Original
TR1000 09-01-MAS-138

13002

Abstract: JESD22-A115-A discharge times are according in standard JESD22-A115-A Classification Criteria All samples used must , classified as meeting a particular sensitivity classification.(JESD22-A115-A) Criteria meet: Class C Any
Electronics Testing Center
Original
09-03-MAS-130-02 13002 SF1141B-2

JESD22-B105-C

Abstract: IEC-60825-2 described in JEDEC standard JESD22-A115A. A sample batch of module pairs (Tx and Rx) is tested and , JESD22-A115-A Class C Charged Device Model JEDEC/EIA JESD22-C101-B Class II IEC 60825-1, IEC
Avago Technologies
Original
AFBR-1010 J-STD-020B JESD22-B105-C JESD22-B102-C JESD22-B106-B IEC-60825-2 JESD22-C101B JESD22-B105C JESD22-B105 IEC60825-2 AFBR-2010 AEC-Q100
Abstract: effective power in the on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine , JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and important , cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 positive EPCOS
Original
B9752 B39941B9752F210 QCT10A
Abstract: in the on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 10 , on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 10 negative & 10 , . to JESD22-A115A (machine model), 10 negative & 10 positive pulses. Please read cautions and EPCOS
Original
LT10A QCS15A

B9752

Abstract: effective power in the on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine , JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and important , cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 positive
EPCOS
Original
R201843LV92J610

JESD22-A114-C

Abstract: JESD22-A114C Errata: CS8900A - Silicon revisions: D, F, & H Reference CS8900A Data Sheet revision DS271F3 dated September 2004. ESD Performance Testing Methodology The CS8900A revisions D, F, & H ESD performance is tested using both the Cirrus Logic method and the Jedec method. The results of the ESD qualification are: Cirrus Logic method machine model passes 200 volts and fails 400 volts. Cirrus Logic method human body model passes 2K volts and fails 4K volts. JEDEC specification JESD22-A115A machine model
Cirrus Logic
Original
CIRRUS ER271DFH1
Abstract: Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please , Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please , JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and important EPCOS
Original
LV14B LV14A GSM900
Abstract: dBm machine model, 1 pulse effective power in the on-state, duty cycle 4:8 acc. to JESD22-A115A , cycle 4:8 acc. to JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read , on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 , on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 EPCOS
Original
GSM850 GSM1800 GSM1900 B9836 B39202B9836P810

C61157-A8-A4

Abstract: model, 1 pulse effective power in the on-state, duty cycle 4:8 acc. to JESD22-A115A (machine model , cycle 4:8 acc. to JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read , on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1 , on-state, duty cycle 4:8 Tstg VDC VESD PIN PIN acc. to JESD22-A115A (machine model), 1 negative & 1
EPCOS
Original
C61157-A8-A4 B9838 B39202B9838P810

B9803

Abstract: siferrit data JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and , cycle 4:8 acc. to JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read , JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and
EPCOS
Original
B9803 siferrit data B39941B9803P810 QCT10L
Abstract: machine model, 10 pulses continuous wave @ +55 ˚C ambient Tx band 1) acc. to JESD22-A115A , JESD22-A115A (machine model), 1 negative & 1 positive pulse. Please read cautions and warnings and EPCOS
Original
B9518 B39192B9518P810
Abstract: machine model, 1 pulse continuous wave, 10000hrs@70°C acc. to JESD22-A115A (machine model), 1 negative , continuous wave, 10000 hrs@70°C 15 dBm acc. to JESD22-A115A (machine model), 1 negative & 1 positive EPCOS
Original
B5151 B39421B5151U310

SI8710

Abstract: +3 kV ESD (MM) JEDEC (JESD22-A115A) â'"200 to +200 V Latch-up JESD78 Passes  , (JESD22-A115A) â'"200 to +200 V Latch-up JESD78 Passes ±200 mA 8.1. Specifications ï' JEDEC (JESD22-C101C) (JESD22-A114E) ï' JEDEC (JESD22-A115A) ï' JESD78 ï' JEDEC 8.2. Purpose of Test
Silicon Laboratories
Original
SI8710 AN742 IEC62539 IEC60065 J1752 IEC61967-2 IEC61000-4-8

ON Semiconductor marking

Abstract: fairchild marking codes sot-23 _C 3. Tested to EIA/JESD22­A114­A 4. Tested to EIA/JESD22­A115­A 5. Tested to JESD22­C101­A 6 , /JESD22­A115­A 5. Tested to JESD22­C101­A 6. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol , /JESD22­A115­A 5. Tested to JESD22­C101­A 6. Tested to EIA/JESD78 RECOMMENDED OPERATING CONDITIONS Symbol
ON Semiconductor
Original
ON Semiconductor marking fairchild marking codes sot-23 W2D SOT23 SOT-353 MARKING L5 diode w2d marking code vk, sot-363 DLD601/D DLD601

marking code t04 sot-23 transistor

Abstract: TRANSISTOR W2D with no air flow. 2. Tested to EIA/JESD22­A114­A. 3. Tested to EIA/JESD22­A115­A. 4. Tested to , to EIA/JESD22­A115­A. 4. Tested to JESD22­C101­A. 5. Tested to EIA/JESD78. RECOMMENDED OPERATING , to EIA/JESD22­A114­A. 3. Tested to EIA/JESD22­A115­A. 4. Tested to JESD22­C101­A. 5. Tested to EIA , to EIA/JESD22­A115­A. 4. Tested to JESD22­C101­A. RECOMMENDED OPERATING CONDITIONS Symbol
ON Semiconductor
Original
marking code t04 sot-23 transistor TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 marking a hA packages SC70-5 OneGate Marking AE sot23-5
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