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JESD22-A114-A

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Abstract: °C 25°C 25°C Remarks MIL MIL JESD22-A114A JESD22-A114A JESD22-A114A JESD22-A114A JESD22-A114A JESD22-A114A Process High Temperature Biased & Storage Die Life Test Data Page 11 of 13 Dynamic Pericom Semiconductor
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ISO-9000 z9910 ED-4701-1-C111A Z9936 ED-4701-1-C113 JESD-17 ED4701-1C-111A PI6C2509 PI6C2510 PI6C2510-133 Z9844ANC Y0025AOC
Abstract: Results Human Body Model EIA/JESD22-A114-A Do not exceed 200 V (Class 1) Machine Model EIA , -541M4 ESD Test Reference Results Human Body Model EIA/JESD22-A114-A Do not exceed 300 V Agilent Technologies
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EIA/JESD22-A115-A ATF-541M4 JESD22A114-A JESD22-A115-A JESD22-A115A JESD22-A114 ATF-551M4/541M4 EIA/JESD22-A114-A JESD22-A113-A 5988-4696EN
Abstract: results ESD Test Reference: Results Human Body Model Machine Model EIA/JESD22-A114-A EIA Agilent Technologies
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EIA/JESD22-C101 TRANSISTOR A114 c101 TRANSISTOR ATF-35143 JESD22-A113A ATF-33143/ATF-34143 ATF-35143/ATF-38143 5988-2480EN
Abstract: /JESD22-A114-A 300 V (Class 1) Machine Model EIA/JESD22-A115-A 40 V (Class A) Class 1 is ESD Agilent Technologies
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ATF-54143 X108 ATF-54143/55143/58143 C/150 5988-4885EN 5988-9133EN
Abstract: Body Model Charge Device Model EIA/JESD22-A114-A EIA/JESD22-C101 Results 200 V 750 V Class Agilent Technologies
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5988-6669EN monolithic amplifiers 109/MTTF J-STD-020 UL-94 5980-2023E
Abstract: Classification 94VO. 4. EIA/JESD22-A114-A Classification: Class 1 www.hp.com/go/rf For technical assistance Hewlett-Packard
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HPMX-5001 HPMX-5002 MIL-STD-202 5968-0215E
Abstract: Electrostatic Discharge Test Name Human Body Model Reference EIA/JESD22-A114-A Results Class 1 Class 1 is Hewlett-Packard
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IAM-91563 5965-7948E 5968-1676E
Abstract: EIA/JESD22-A114-A 4/0 ESD: Machine Model @ 200 Volts EIA/JESD22-A115-A 9/0 ESD: Charged Integrated Device Technology
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HD4004 TSI310A JESD22-A118 JESD22-A104-A Polyimide a103 transistor IBM DATE CODE Tsi310A-133CE I0909-01 TSI310A-133CE TSI310A-133CEY 80B6010 QR004
Abstract: ) Test Results ESD Test Reference Results Human Body Model EIA/JESD22-A114-A Class 1 Do Agilent Technologies
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MGA-725M4 7.2 channel receiver 94-V0 5988-4293EN
Abstract: wetting >95% Solvent resistance MIL-STD-883 Meth 2015 Solv. 1,3,4 ESD HBM JESD22-A114-A Class 2 10 Vectron International
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JESD22-A113-B OCXO 20 MHZ JESD22-A113B OX-4000-EAE-2580-20M00 OX-4000-EAE-2580 G125C
Abstract: Reference Results Human Body Model EIA/JESD22-A114-A 300 V (Class 1) Machine Model EIA Agilent Technologies
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5988-4026EN
Abstract: /JESD22-A114-A Results MSA-2543: 350 V (Class 1) MSA-2643: 400 V (Class 1) MSA-2743: 500 V (Class 1 Agilent Technologies
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HBFP-0405 HBFP-0420 HBFP0450 QCPM-9804 HBFP-0450 Agilent MSA-2543 QCPM-9 QCPM- qcpm MSA-2X43 C/100
Abstract: Body Model EIA/JESD22-A114-A 300 V (Class 1) Machine Model EIA/JESD22-A115-A 40 V (Class Agilent Technologies
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ATF-36077 M2031 M2003 agilent pHEMT transistor ATF-36077 Die Model transistor D 2394 36077 5988-8619EN
Abstract: events. The two most common methods, which are defined in JEDEC standards EIA/JESD22-A114-A and A115-A , Electrostatic-Discharge-Sensitive (ESDS) Devices EIA/JESD22-A114-A Electrostatic Discharge (ESD) Sensitivity Testing Human Body Wolfson Microelectronics
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WAN-109 EIA-625 A112 all ic datasheet in one pdf file electro discharge machining WAN-107
Abstract: Machine Model Referance EIA/JESD22-A114-A EIA/JESD22-A115-A Results Class 1 Class A Class 1 is ESD Hewlett-Packard
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5968-1409E
Abstract: temperature range. Notes Human Body Model JESD22-A114-A Class 2 Machine Model JESD22-A115-A Class B US Digital
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8300-K 8300-P 8300-Q
Abstract: 5 TX-7040-EAE-2872-10M0 TCXO Additional environmental conditions ESD HBM JESD22-A114-A Vectron International
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MIL-883-1010 1000H TX-7040-EAE-2872
Abstract: Human Body Model EIA/JESD22-A114-A Class 1­ Do not exceed 100 V Machine Model EIA Agilent Technologies
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ATF-331M4 ATF-33143 2-A115-A 5988-5112EN
Abstract: -883 Meth 2015 Solv. 1,3,4 ESD HBM JESD22-A114-A Class 2 10* 2000V Moisture Sensit. Level 1 Vectron International
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OX-2201-EAE-2580-20M00 OX-2201-EAE-2580
Abstract: 5 TX-7040-EAE-2872-12M8 TCXO Additional environmental conditions ESD HBM JESD22-A114-A Vectron International
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Abstract: with no air flow. 2. Tested to EIA/JESD22­A114­A. 3. Tested to EIA/JESD22­A115­A. 4. Tested to , 10 mm­by­1 inch, 2­ounce copper trace with no air flow. 2. Tested to EIA/JESD22­A114­A. 3. Tested , to EIA/JESD22­A114­A. 3. Tested to EIA/JESD22­A115­A. 4. Tested to JESD22­C101­A. 5. Tested to EIA , 10 mm­by­1 inch, 2­ounce copper trace with no air flow. 2. Tested to EIA/JESD22­A114­A. 3. Tested ON Semiconductor
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marking code t04 sot-23 transistor TRANSISTOR W2D Marking c9 SOT23-5 TOSHIBA SOT-23-6 marking code M2 W2D SOT23 marking a hA packages SC70-5 DLD601/D DLD601
Abstract: _C 3. Tested to EIA/JESD22­A114­A 4. Tested to EIA/JESD22­A115­A 5. Tested to JESD22­C101­A 6 , TSOP5 Package: ­6 mW/_C from 65_ to 125_C 3. Tested to EIA/JESD22­A114­A 4. Tested to EIA , TSOP5 Package: ­6 mW/_C from 65_ to 125_C 3. Tested to EIA/JESD22­A114­A 4. Tested to EIA ON Semiconductor
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ON Semiconductor marking fairchild marking codes sot-23 SOT-353 MARKING L5 diode w2d va sot-353 marking code vk, sot-363
Abstract: JESD22-C101 "Field- induced Charged Device Model" s JEDEC STANDARD JESD22-A114A "Human Body Model" s STMicroelectronics
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AN1181 CDF-AEC-Q100-002 A114A CDF-AEC-Q100-003 EDX-4702 AN1181/
Abstract: JESD22-C101 "Field- induced Charged Device Model" s JEDEC STANDARD JESD22-A114A "Human Body Model" s STMicroelectronics
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electrostatic high voltage generator EDX4702 SOP2614 AN1181/0100
Abstract: /JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. · Specified from -40 to +125 °C. QUICK , 5 V Multiple package options ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA Philips Semiconductors
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74LVC1GU04 JESD8B/JESD36
Abstract: package options · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V , options ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified Philips Semiconductors
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74LVC1G06 74LVC1G06GW
Abstract: : HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. QUICK REFERENCE DATA GND = 0 , performance exceeds 250 mA ESD protection: r HBM EIA/JESD22-A114-A exceeds 2000 V r MM EIA/JESD22-A115-A Philips Semiconductors
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JESD36 74ALVC04 TSSOP14 74ALVC04PW
Abstract: options · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V · , /JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V Specified from -40 to +125 Cel. top Philips Semiconductors
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74LVC1G32 74LVC1G32GW
Abstract: options · ESD protection: HBM EIA/JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. · , /JESD22-A114-A exceeds 2000 V MM EIA/JESD22-A115-A exceeds 200 V. Specified from -40 to +125 Cel. top Philips Semiconductors
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74LVC1G86 74LVC1G86GW
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