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JESD13B

Catalog Datasheet MFG & Type PDF Document Tags

HCF4049B

Abstract: JESD13B HCF4069UB HEX INVERTER s s s s s s s MEDIUM-SPEED OPERATION tPD = 30ns (Typ.) at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4069UB is a monolithic integrated circuit
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HCF4069UBEY HCF4069UBM1 HCF4069UM013TR HCF4049B P001A mos inverter DIP-14

HCF4011BEY

Abstract: HCF4011B HCF4011B QUAD 2 INPUT NAND GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4011B
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HCF4011BEY HCF4011BM1 HCF4011M013TR quad time delay HCF4011BE

HCF4040BEY

Abstract: HCF4040B HCF4040B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 12 STAGE s s s s s s s s s s MEDIUM SPEED OPERATION : tPD = 80ns (TYP.) at VDD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS
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HCF4040BEY HCF4040BM1 HCF4040M013TR DIP-16 P001C

HCF4050BEY

Abstract: HCF4050B HCF4050B HEX BUFFER/CONVERTER (NON INVERTING) s s s s s s s s PROPAGATION DELAY TIME : tPD = 40ns (TYP.) at VDD = 10V CL = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION HIGH "SINK" AND "SOURCE" CURRENT CAPABILITY QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS
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HCF4050BEY HCF4050BM1 HCF4050M013TR

HCF4060BEY

Abstract: HCF4060BE HCF4060B 14-STAGE RIPPLE CARRY BINARY COUNTER/DIVIDER AND OSCILLATOR s s s s s s s s s MEDIUM-SPEED OPERATION COMMON RESET FULLY STATIC OPERATION BUFFERED INPUTS AND OUTPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4060B
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HCF4060BEY HCF4060BM1 HCF4060M013TR HCF4060BE ci 740 rx

HCF4017BE

Abstract: HCF4017BEY HCF4017B DECADE COUNTER WITH 10 DECODED OUTPUTS s s s s s s s s MEDIUM SPEED OPERATION : 10 MHz (Typ.) at VDD = 10V FULLY STATIC OPERATION STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The
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HCF4017BEY HCF4017BM1 HCF4017M013TR HCF4017BE

HCF4518BE

Abstract: HCF4518B HCF4518B DUAL BCD UP COUNTER s s s s s s s s MEDIUM SPEED OPERATION : 6MHz (Typ.) at 10V POSITIVE -OR NEGATIVE- EDGE TRIGGERING SYNCHRONOUS INTERNAL CARRY PROPAGATION QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF4518B is a
STMicroelectronics
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HCF4518BEY HCF4518BM1 HCF4518M013TR PO13H HCF4518BE

HCF4086B

Abstract: HCF4086BEY HCF4086B EXPANDABLE 4-WIDE 2-INPUT AND-OR INVERTER GATE s s s s s s s s MEDIUM-SPEED OPERATION tPHL = 90ns, tPLH = 140ns (Typ.) at 10V INHIBIT AND ENABLE INPUTS QUIESCENT CURRENT SPECIFIED UP TO 20V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES
STMicroelectronics
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HCF4086BEY HCF4086BM1 HCF4086M013TR PO13G

HCF4044B

Abstract: HCF4044BEY HCF4044B QUAD NAND 3-STATE R-S LATCH s s s s s s s QUIESCENT CURRENT SPECIFIED UP TO 20V 3-LEVEL OUTPUTS WITH COMMON OUTPUT ENABLE SEPARATE SET AND RESET INPUT FOR EACH LATCH 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4044B is a monolithic integrated
STMicroelectronics
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HCF4044BEY HCF4044BM1 HCF4044M013TR

HCF4007UBE

Abstract: HCF4007UBEY HCF4007UB DUAL COMPLEMENTARY PAIR PLUS INVERTER s s s s s s s STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS MEDIUM SPEED OPERATION tPD = 30ns (Typ.) AT 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4007UB is a monolithic
STMicroelectronics
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HCF4007UBEY HCF4007UBM1 HCF4007UM013TR HCF4007UBE

HCF40104B

Abstract: HCF40104BEY HCF40104B 4-BIT BIDIRECTIONAL UNIVERSAL SHIFT REGISTER s s s s s s s s s s MEDIUM SPEED OPERATION : 12 MHz (Typ.) at 10V FULLY STATIC OPERATION SYNCHRONOUS PARALLEL OR SERIAL OPERATION THREE-STATE OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD
STMicroelectronics
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HCF40104BEY

HCF4069UB

Abstract: HCF4049B HCF4069UB HEX INVERTER s s s s s s s MEDIUM-SPEED OPERATION tPD = 30ns (Typ.) at 10V STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4069UB is a monolithic integrated circuit
STMicroelectronics
Original
HCF4069U

HCF4030B

Abstract: HCF4030BEY HCF4030B QUAD EXCLUSIVE-OR GATE s s s s s s s MEDIUM SPEED OPERATION - tPHL = tPLH = 65ns (TYP.) at CL = 50pF and VDD-VSS = 10V LOW OUTPUT IMPEDANCE : 500 (TYP.) at VDD-VSS = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP
STMicroelectronics
Original
HCF4030BEY HCF4030BM1 HCF4030M013TR

HCF4081B

Abstract: HCF4081BEY HCF4081B QUAD 2 INPUT AND GATE s s s s s s MEDIUM SPEED OPERATION : tPD = 60ns (Typ.) at 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4081B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor
STMicroelectronics
Original
HCF4081BEY HCF4081BM1 HCF4081M013TR HCF4081BE
Abstract: HCF4024B RIPPLE-CARRY BINARY COUNTER/DIVIDERS 7 STAGE I I I I I I I I I I MEDIUM SPEED OPERATION : tPD = 80ns (Typ.) at VDD = 10V FULLY STATIC OPERATION COMMON RESET BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS STMicroelectronics
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HCF4024BEY HCF4024BM1 HCF4024M013TR

HCF4078BM1

Abstract: HCF4078B HCF4078B 8 INPUT NOR/OR GATE s s s s s s PROPAGATION DELAY TIME : tPD = 75ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF4078B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology
STMicroelectronics
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HCF4078BEY HCF4078BM1 HCF4078M013TR

HCF4000BEY

Abstract: HCF4000B HCF4000B DUAL 3-INPUT NOR GATE PLUS INVERTER s s s s s s s s PROPAGATION DELAY TIME tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS
STMicroelectronics
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HCF4000BEY HCF4000BM1 HCF4000M013TR DIP14, inverter, high voltage

HCF4001BE

Abstract: HCF4001 HCF4001B QUAD 2-INPUT NOR GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP ORDER
STMicroelectronics
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HCF4001BEY HCF4001M013TR HCF4001BE HCF4001 HCF4001BM1 SO-14

HCF40104B

Abstract: HCF40104BEY HCF40104B 4-BIT BIDIRECTIONAL UNIVERSAL SHIFT REGISTER s s s s s s s s s s MEDIUM SPEED OPERATION : 12 MHz (Typ.) at 10V FULLY STATIC OPERATION SYNCHRONOUS PARALLEL OR SERIAL OPERATION THREE-STATE OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIF. UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD
STMicroelectronics
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HCF4010B

Abstract: HCF4010BEY HCF4010B HEX BUFFER/CONVERTER (NON INVERTING) s s s s s s s s s PROPAGATION DELAY TIME tPD = 40ns (TYP.) at VDD = 10V CL = 50pF HIGH TO LOW LEVEL LOGIC CONVERSION MULTIPLEXER: 1 TO 6 OR 6 TO 1 HIGH "SINK" AND "SOURCE" CURRENT CAPABILITY QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS
STMicroelectronics
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HCF4010BEY HCF4010BM1 HCF4010M013TR

HCF4011BE

Abstract: HCF4011B HCF4011B QUAD 2 INPUT NAND GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4011B
STMicroelectronics
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HCF4001B

Abstract: HCF4001BEY HCF4001B QUAD 2-INPUT NOR GATE s s s s s s s s PROPAGATION DELAY TIME: tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The
STMicroelectronics
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HCF4012BE

Abstract: HCF4012BEY HCF4012B DUAL 4 INPUT NAND GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4012B
STMicroelectronics
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HCF4012BEY HCF4012BM1 HCF4012M013TR HCF4012BE

HCF4023BE

Abstract: HCF4023B HCF4023B TRIPLE 3 INPUT NAND GATE s s s s s s s s PROPAGATION DELAY TIME : tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The
STMicroelectronics
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HCF4023BEY HCF4023BM1 HCF4023M013TR HCF4023BE

HCF4081BE

Abstract: JESD13B HCF4081B QUAD 2 INPUT AND GATE s s s s s s MEDIUM SPEED OPERATION : tPD = 60ns (Typ.) at 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4081B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor
STMicroelectronics
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truth table for 7 inputs OR gate

Abstract: HCF4073B HCF4073B TRIPLE 3 INPUT AND GATE s s s s s s MEDIUM SPEED OPERATION : tPD = 60ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4073B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor
STMicroelectronics
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HCF4073BEY HCF4073BM1 HCF4073M013TR truth table for 7 inputs OR gate
Abstract: HCF4002B DUAL 4-INPUT NOR GATE s s s s s s s s PROPAGATION DELAY TIME tPD = 50ns (TYP.) at VDD = 10V CL = 50pF BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP SOP ORDER STMicroelectronics
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HCF4002BEY HCF4002BM1 HCF4002M013TR

HCF4071BE

Abstract: HCF4071BM1 HCF4071B QUAD 2 INPUT OR GATE s s s s s s MEDIUM SPEED OPERATION : tPD = 60ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4071B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor
STMicroelectronics
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HCF4071BEY HCF4071BM1 HCF4071M013TR HCF4071BE monolithic waveform generator

HCF4078B

Abstract: HCF4078BEY HCF4078B 8 INPUT NOR/OR GATE s s s s s s PROPAGATION DELAY TIME : tPD = 75ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF4078B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology
STMicroelectronics
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astable multivibrator with transistor

Abstract: HCF4047BE % TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR
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HCF4047B HCF4047BEY HCF4047BM1 HCF4047M013TR astable multivibrator with transistor HCF4047BE hcf4047 astable

HCF4051BEY

Abstract: HCF4051B REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DIP
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HCF4051B HCF4051BEY HCF4051BM1 HCF4051M013TR HCF4051BE

HCF4082BM1

Abstract: HCF4082M013TR HCF4082B DUAL 4 INPUT AND GATE s s s s s s MEDIUM SPEED OPERATION : tPD = 60ns (Typ.) at 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4082B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor
STMicroelectronics
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HCF4082BEY HCF4082BM1 HCF4082M013TR HCF4082BE

HCF4078BM1

Abstract: HCF4078B HCF4078B 8 INPUT NOR/OR GATE s s s s s s PROPAGATION DELAY TIME : tPD = 75ns (TYP.) at VDD = 10V QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B "STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION HCF4078B is a monolithic integrated circuit fabricated in Metal Oxide Semiconductor technology
STMicroelectronics
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hcf4011bey equivalent

Abstract: HCF4011B QUAD 2 INPUT NAND GATE I I I I I I I I PROPAGATION DELAY TIME tPD = 60ns (Typ.) at VDD = 10V BUFFERED INPUTS AND OUTPUTS STANDARDIZED SYMMETRICAL OUTPUT CHARACTERISTICS QUIESCENT CURRENT SPECIFIED UP TO 20V 5V, 10V AND 15V PARAMETRIC RATINGS INPUT LEAKAGE CURRENT II = 100nA (MAX) AT VDD = 18V TA = 25°C 100% TESTED FOR QUIESCENT CURRENT MEETS ALL REQUIREMENTS OF JEDEC JESD13B " STANDARD SPECIFICATIONS FOR DESCRIPTION OF B SERIES CMOS DEVICES" DESCRIPTION The HCF4011B
STMicroelectronics
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hcf4011bey equivalent
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