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Part Manufacturer Description Datasheet BUY
ISL73096RHVX Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73096RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73128RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
ISL73127RHVF Intersil Corporation RF POWER TRANSISTOR visit Intersil
TLV2621IDBVR Texas Instruments 800 uA/ch, 11MHz, RRO, Low Voltage, Single Channel Op Amp 5-SOT-23 -40 to 125 visit Texas Instruments
TLV2621IDBVTG4 Texas Instruments 800 uA/ch, 11MHz, RRO, Low Voltage, Single Channel Op Amp 5-SOT-23 -40 to 125 visit Texas Instruments

JE 800 transistor

Catalog Datasheet MFG & Type PDF Document Tags

diode D45C

Abstract: JE 800 transistor 1 3 3 40 40 B D 241B B D 242B T IP 3 1 B 3 M JE 12007E 800 T IP 3 2 B , 80 800 M JE 8503 7.5 min 1 4 2 2.5 80 0.4 typ 0.15 typ 3 0.4 typ , 50 50 2.75 typ. 50 50 800 M JF16018* 4 min 5 4.5 typ 0.2 typ 5 12 , PNP M JE 2360T M JE 2361T 1 tf hFE M in /M a x 1 0.6 typ 3 30 D e v ic e , 3 30 30/150 0.3 2 typ 0.18 typ 0.3 10 40 M JE 5730 30/150 0.3 2
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diode D45C JE 800 transistor L146 IC BD800 340B-03 JF16006A JF10012 JF16212 JF16206 JF16010A

CM800HA-66H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM800HA , Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som PRE CM800HA-66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER
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CM400DY-50H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-50H q , Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som PRE CM400DY-50H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED
Powerex
Original

CM800HB-50H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES Y AR LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th , Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25
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CM800HB-50H

CM800HB-50H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr , Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25 °C) Symbol VCES
Mitsubishi
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CM400DY-66H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H q , LABEL 30 28 5 38 15 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je , -66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED
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CM800HB-66H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES Y AR LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th , Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25
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CM800HB-66H

Transistor GE 67

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE , Bipolar Transistor) Modules Mar. 2009 1 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub is is nic lim e: Th tr Notice parame Som PRE CM1000E4C-66R 4th-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER
Mitsubishi
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Transistor GE 67 CM1000

Je 243

Abstract: JE371 5195 B D 441 B D 442 B D 679## 80 2N 5194 M JE 800## 36 3 40 40 M JE240 , @ ic US ps @ lc *T MHz Amp M ax M ax Amp M in @ 2 5 °C M JE 3439 40/160 0.02 15 15 150 M JE 341 25/200 0.05 15 20.8 200 M JE 3 4 4 , E PNP M JE 350 E 3.5 typ 0.24 typ 0.1 W a tts 20 2N 4921 2N 4918 20 , D 1 4 0 .1 0 63/160 0.15 12.5 M JE 13002* 5/25 1 4 0.7 1 5 40 M
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JE340 Je 243 JE371 JE171 transistor BD 341 2N5655 BD157 2N5656 BD159 BD165
Abstract: Power Transistor Device Data M JE 1 8 2 0 6 M JF 1 8 2 0 6 VB E , VOLTAGE (VOLTS) TYPICAL , BVCER (VOLTS) hFE, FORCED GAIN 6 Motorola Bipolar Power Transistor Device Data 15 M JE 1 , ) for MJF18206 Motorola Bipolar Power Transistor Device Data 9 M JE 1 8 2 0 6 M JF 1 8 2 0 6 , Application Note AN1040. 10 Motorola Bipolar Power Transistor Device Data M JE 1 8 2 0 6 M JF l 8 2 0 , MOTOROLA O rder this docum ent by MJE18206/D SEMICONDUCTOR TECHNICAL DATA M JE 18206 M -
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JF18206 MJE/MJF18206 JE18206 221D-02 E69369

CM1200HB-66H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub , Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM
Mitsubishi
Original
CM1200HB-66H

bipolar transistor 124 e

Abstract: IGBT 1200A MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE INSULATED TYPE HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules CM1200HA , MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub n his is tric lim e , Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25°C) Symbol VCES
Mitsubishi
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CM1200HA-50H bipolar transistor 124 e IGBT 1200A circuit diagram induction heating

CM1200HB-50H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb.1999 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub , Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM
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CM1200HB-50H

CM400DY-66H

Abstract: MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM400DY-66H q , LABEL 30 28 5 38 15 HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor , -66H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED , = 25°C Pulse TC = 25°C Ratings 3300 ±20 400 800 400 800 3470 ­40 ~ +150 ­40 ~ +125
Mitsubishi
Original

je5740

Abstract: MJES740 ) REV 1 3-640 Motorola Bipolar Power Transistor Device Data M JE 5 7 4 0 M JE 5741 M JE 5742 , Motorola Bipolar Power Transistor Device Data 3-641 M JE 5740 M JE5741 M JE 5742 Table 1. Test , JE5740 M JE5741* M JE 5742* `Motorola Pr#f*rr#d Dovte* POWER DARLINGTON TRANSISTORS 8 AMPERES 300 , 8 16 2.5 5 2 16 MJE5742 400 800 Unit Vdc Vdc Vdc Ade Ade 0 .100 5 -5 0 > B IBM , -6 4 2 Motorola Bipolar Power Transistor Device Data MJES740 MJE5741 MJE5742 SAFE OPERATING
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Ferroxcube core JE57 MR826 diode MJE5742* equivalent MJE5740 MJE57425 MJE5741MJE5740 NJE574 UE574 1-----UE574

JE 800 transistor

Abstract: 2SK591 MOS Field Effect Power Transistor 2SK591 FET Iiffl N-Channel MOS Field Effect Power Transistor Switching Industrial Use 2SK591(±, Nf-^n^Ã'ff^^-MOS FETT", 5 MWMMCCO^ ti IZ fi^KiS^äTf , A Coss 800 pF S fi c 350 pF t > & fé Pi td(on) Id=6 A, VGS(oâ'ž)=10 V Vcc^30 V, Rl=5 Q Riâ , - 5 5 3 1 * £ je K * (0263) 35- 1 666 à a g « m Dil SS (Ol 54)25 - 2 2 5 5 ± » BS £ IS sS lí (0266) 53- 5350 S Å" s * m iE âf(0 1 38) 52 â'" II 7 7 m £ je Â¥ (3(0552)24- 4 14 1 ffi )ii
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sje transistor JE 33 TC-6070 TT 46 N 800 1987M

2SA1462

Abstract: GM0B SEC m^Ttvrx 'j =1 > h Silicon Transistor 2SA1462 i&mjgx'f'y^rm PNP Silicon Epitaxial Transistor High Speed Switching #ë/FEATURES OXfyf> /jÃKÃ"'ji^o t«, : 9.0 ns TYP., tstg : 16 ns TYP , '"10 V, IE = 10 mA 800 1800 MHz =â'¢ u 9 9 ^ m Cob VCB= â'"5.0 V, IE = 0, f = 1.0 MHz 2.0 3.0 pF 9 - , » p 3E JE » P (078 )332 â'" 33 1 1 B S 3E (s 4i-(0485)25- 3700 % î JE »(0792)24 , î )ï e â f K(0472)27-t6 (047 1)64- 544 1 70 1 1 2s; ï 6. B $ 3E JE a s m fi (0742)26-» (082)247
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GM0B 3111R TRANSISTOR BO 346 J-10 T108 T460 2SC3735 SC-59

CM1200HB-66H

Abstract: MITSUBISHI HVIGBT MODULES Y AR LIMIN . ge. ation ecific ct to chan je nal sp ot a , SWITCHING USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are sub , Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM
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CM1200HB-50H

Abstract: JE 800 transistor MITSUBISHI HVIGBT MODULES ARY LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits , USE 2nd-Version HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules INSULATED TYPE , 3 - M4 NUTS HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Aug.1998 MITSUBISHI HVIGBT MODULES Y AR LIMIN . ge. ation ecific ct to chan je nal sp ot a fiits are , Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM
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10205 transistor

Abstract: JF18004 Transistor Device Data M JE 1 8 0 0 4 M JF18004 TYPICAL SWITCHING CHARACTERISTICS (lB2 = lc '2 fo r all , Power Transistor For Switching Power Supply Applications The MJE/MJF18004 have an applications specific , MJE18004 MJF180O4 Unit Vdc Vdc Vdc Ado Ade 4500 3500 1500 35 0.28 Volts M JE 18004* M JF 18004* ·Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS · · · · MAXIMUM , e S' ^EB " 0) (VCE - 800 V, VEB - 0) Emitter Cutoff Current (Ve b - 9 0 Vdc, Ic - 0) (1) Pulse Test
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10205 transistor MJF18004
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