500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Search Stock

Shift+Click on the column header for multi-column sorting 
Part
Manufacturer
Supplier
Stock
Best Price
Price Each
Ordering
Part : JANTXV2N7227 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $89.59 Price Each : $101.69
Part : JANTXV2N7227U Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $106.29 Price Each : $120.59
Shipping cost not included. Currency conversions are estimated. 

JANTXV2N7227 Datasheet

Part Manufacturer Description PDF Type
JANTXV2N7227 International Rectifier 400V Single N-channel Hi-rel MOSFET inA TO-254AA Package Original
JANTXV2N7227 Microsemi N Channel MOSFET; Package: TO-254; Original
JANTXV2N7227 Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH Original
JANTXV2N7227 Omnirel 14A N-channel enhancement mode MOSFET power transistor Original
JANTXV2N7227 International Rectifier HEXFET TRANSISTOR Scan
JANTXV2N7227 International Rectifier HEXFET TRANSISTOR Scan
JANTXV2N7227 International Rectifier N-Channel HEXFET Transistor, 400 Volt, 0.315 Ohm Scan
JANTXV2N7227U International Rectifier POWER MOSFET Original
JANTXV2N7227U Microsemi N Channel MOSFET; Original
JANTXV2N7227U Microsemi FETs - Single, Discrete Semiconductor Products, MOSFET N-CH Original

JANTXV2N7227

Catalog Datasheet MFG & Type PDF Document Tags

JANTXV2N7224

Abstract: 2N7224 JANTXV , JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 JANTX, JANTXV POWER MOSFET IN TO-254AA PACKAGE, QUALIFIED , , JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM , , JANTX2N7224, JANTXV2N7224 2N7225, JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228 , , JANTX2N7225, JANTXV2N7225 2N7227, JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE , , JANTX2N7227, JANTXV2N7227 2N7228, JANTX2N7228, JANTXV2N7228 ABSOLUTE MAXIMUM RATINGS ( C = 25°C unless
Omnirel
Original
2N7224 2N7224 JANTXV 2N7228 JANTX mosfet data sheet 2N7228 JANTX mosfet 2N7225 JANTX MIL-PRF-19500/592 MIL-PRF-19500 MIL-S-19500/592

2N7225

Abstract: jantxv2n7224 .1-325 IRFM350, 2N7227, JANTX2N7227, JANTXV2N7227
-
OCR Scan
IRFG110 2N7334 JANTX2N7334 JANTXV2N7334 IRFG5110 IRFG6110
Abstract: International I Q R Rectifier " F f rN A T if M A I » F C Government and Space Products *D Part Number ByoSS (V) ^DS(on) (Q ^ Tf=25°C (A) T ,= 100°C C (A) @ T f= 2 5 ° C (W) h Fax on Demand Number Case Outline Key HEXFET ® Power MOSFETs JANTX2N7224 JANTX2N7225 JANTX2N7227 JANTX2N7228 JANTXV2N72I8 JANTXV2N72I9 JANTXV2N7221 JANTXV2N7222 JANTXV2N7224 JANTXV2N7225 JANTXV2N7227 JANTXV2N7228 P-Chonnel Hermetic Packages TO-254AA 100 200 400 500 ¡00 200 400 500 100 200 400 500 -100 -
OCR Scan
1RFM9I40 IRFM9240 JANS2N7236 JANS2N7237 JANTX2N7236 JANTX2N7237
Abstract: International XORlRe cB fie r Government and Space HEXFET Power MOSFETs Hermetic Package N & P Channel Part Number IRFM044 IRFM054 IRFM064 IRFM140 2N7218 JANTX2N7218 JANTXV2N7218 IRFM150 2N7224 JANTX2N7224 JANTXV2N7224 IRFM240 2N7219 JANTX2N7219 JANTXV2N7219 IRFM250 2N7225 JANTX2N7225 JANTXV2N7225 IRFM340 2N7221 JANTX2N7221 JANTXV2N7221 IRFM350 2N7227 JANTX2N7227 JANTXV2N7227 ÌRFM360 IRFM440 2N7222 JANTX2N7222 JANTXV2N7222 IRFM450 2N7228 JANTX2N7228 JANTXV2N7228 IRFM460 IRFMG40 IRFMG50 IRFM9140 2N7236 -
OCR Scan
JANTXV2N7236 2N7237 JANTXV2N7237 T0-254AA
Abstract: SCF2N7227T1 JANTX2N7227 JANTXV2N7227 POWER MOSFET FOR RUGGED ENVIRONMENTS DESCRIPTION TO-254AA REF: MIL-PRF-19500/592 N-Channel 400 Volt < 0.315 Ohms 14 Amp SEMICOA's MOSFET technology is designed for rugged environments providing excellent long term reliability. SEMICOA's long heritage providing military grade technology and packaging allows these devices to be used for ground based telecommunications, vehicles, ships, weapon systems and other application where failure is not an option. FEATURES Semicoa Semiconductors
Original
Abstract: PD-90712E POWER MOSFET THRU-HOLE (TO-254AA) Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL ® Part Number RDS(on) ID IRFM350 0.315â"¦ HEXFET MOSFET TECHNOLOGY 14A HEXFET® MOSFET technology is the key to International Rectifierâ'™s advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established International Rectifier
Original
5M-1994

irfm9034

Abstract: JANTXV2N7227 IRFM360 IRFM440 JANTX2N7222 JANTXV2N7222 IRFM450 JANTX2N7228 JANTXV2N7228 IRFM460 IRFMG40
-
OCR Scan
irfm9034 IRFAF30 IRFAF40 IRFAF50 IRFAG30 IRFAG40 IRFAG50

IRFM350

Abstract: JANTX2N7227 PD - 90491D POWER MOSFET THRU-HOLE (TO-254AA) Product Summary IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Part Number RDS(on) ID IRFM350 0.315 14A HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established
International Rectifier
Original
O-254AA

MOSFET DRIVER circuits

Abstract: PD-90712E POWER MOSFET THRU-HOLE (TO-254AA) Product Summary Part Number IRFM350 IRFM350 JANTX2N7227 JANTXV2N7227 REF:MIL-PRF-19500/592 400V, N-CHANNEL HEXFET MOSFET TECHNOLOGY ® RDS(on) 0.315 ID 14A HEXFET® MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. HEXFET transistors also feature all of the well-established advantages of
International Rectifier
Original
MOSFET DRIVER circuits

pj 87 diode

Abstract: diode pj 87 Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER EJR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR N-CHANNEL IRFM350 JANTX2N7227 JANTXV2N7227 (REF: MIL-S-1S500/5S2] 400 Volt, 0.315 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of
-
OCR Scan
IRFM350D pj 87 diode diode pj 87 I334 diode I334 660 tg diode iball S-19500 IRFM350U MIL-S-19500

Diode T3D 56

Abstract: T3D DIODE Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER IOR REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR N-CHANNEL IRFM35Q JANTXV2N7227 [REF: MIL-S-1S500/592] 400 Volt, 0.315 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as
-
OCR Scan
Diode T3D 56 T3D DIODE T3D 65 diode DD 127 D TRANSISTOR T3D 53 diode tx 2n7227 I-340 IRFM3500 MIL-S-19S00 5S452
Abstract: Data Sheet No. PD-9.491C INTERNATIONAL RECTIFIER I© R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET® TRANSISTOR N-CHANNEL IRFM350 2N 7227 JANTX2N7227 JANTXV2N7227 (REF: MIL-S-1SSOO/592] 400 Volt, 0.315 Ohm HEXFET The HEXFET® technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry design achieves very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well -
OCR Scan
I-339

IRFM9034

Abstract: irhy JANTXV2N7222U JANTXV2N7224U JANTXV2N7225U JANTXV2N7227U JANTXV2N7228U IRFN9034 IRFN9140 IRFN9240 JANS2N7236U , JANTXV2N7222 JANTXV2N7224 JANTXV2N7225 JANTXV2N7227 JANTXV2N7228 IRFM9034 IRFM9140 IRFM9240 JANS2N7236
International Rectifier
Original
irhy IRFE310 JANSR2N7261 irh7c50se international rectifier p IRHE7110 IRHE7130 IRHE7230 IRHE8110 IRHE8130 IRHE8230

HFA40HF120

Abstract: 10RIA10 27.4 17 150 JANTXV2N7227U 400 0.315 14 9 150 JANTXV2N7228U 500 0.415 , 90554 JANTXV2N7227 400 0.315 14 9 150 90491 JANTXV2N7228 500 0.415 12
International Rectifier
Original
DO-203AA DO-203AB HFA40HF120 10RIA10 Smd diod 10RIA100 10RIA120 10RIA20 22GQ100 25GQ045 22DGQ045

MO-D36AB

Abstract: IRF9510 SEC JANTXV2N7219 JANTXV2N7221 JANTXV2N7222 JANTXV2N7224 JANTXV2N7225 JANTXV2N7227 JANTXV2N7228 IRFM140 IRFM240
-
OCR Scan
MO-D36AB IRF9510 SEC IRF510 SEC 2n6845 jantx D 10.7 A IRF540 smd T0-205AF T0-204AA/AE

IRF460

Abstract: SMD TRANSISTOR MARKING k38 PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) IRFN350 JANTX2N7227U JANTXV2N7227U REF , the last page www.irf.com 1 12/12/07 IRFN350, JANTX2N7227U, JANTXV2N7227U Electrical , , JANTXV2N7227U Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3 , IRFN350, JANTX2N7227U, JANTXV2N7227U 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage , , JANTXV2N7227U VDS VGS RD D.U.T. RG + -V DD VGS Pulse Width ≤ 1 µs Duty Factor ≤ 0.1
International Rectifier
Original
IRF460 SMD TRANSISTOR MARKING k38 smd transistor k38 we 751002 s SMD-6C transistor smd k45 RIC7113A4 RIC7113E4 RIC7113L4 S2803R3S S2805D S2805S
Abstract: JANTX2N7219U JANTXV2N7219U JANTX2N7225U JANTXV2N7225U JANTX2N7221U JANTXV2N7221U JANTX2N7227U JANTXV2N7227U 60 International Rectifier
Original
Abstract: PD-91551D POWER MOSFET SURFACE MOUNT(SMD-1) IRFN350 JANTX2N7227U JANTXV2N7227U REF , www.irf.com 1 12/12/07 IRFN350, JANTX2N7227U, JANTXV2N7227U Electrical Characteristics @ Tj = 25 , , JANTXV2N7227U Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics Fig 3 , IRFN350, JANTX2N7227U, JANTXV2N7227U 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage , , JANTXV2N7227U V DS VGS RG RD D.U.T. + -V DD V GS Pulse Width 1 µs Duty Factor 0.1 % Fig -
OCR Scan
IRHM7250 IRHM3250 IRHM4250 IRHM8250 JANSR2N7269 JANSF2N7269

IRFN350

Abstract: JANTX2N7227U PD-91551B IRFN350 JANTX2N7227U ® HEXFET POWER MOSFET JANTXV2N7227U [REF:MIL-PRF-19500/592] N - CHANNEL 400 Volt, 0.315 MOSFET Product Summary Part Number IRFN350 ® HEXFET power MOSFET technology is the key to International Rectifier's advanced line of power MOSFET transistors. The efficient geometry achieves very low on-state resistance combined with high transconductance. HEXFET® power MOSFET transistors also feature all of the well-established advantages of MOSFETs, such
International Rectifier
Original
400V Single N-Channel HEXFET Power MOSFET MOSFET 150 N IRF

2N7227U

Abstract: IRFN350 JANTXV2N7222 JANTXV2N7224 JANTXV2N7225 JANTXV2N7227 JANTXV2N7228 IRFM9034 IRFM9140 IRFM9240 JANS2N7236
International Rectifier
Original
2N7227U

2N6782 JANTX

Abstract: 2N6758 JANTX JANTXV2N7219 JANTXV2N7221 JANTXV2N7222 JANTXV2N7224 JANTXV2N7225 JANTXV2N7227 JANTXV2N7228 IRFM140 IRFM240
International Rectifier
Original
IRH7054 IRH7150 IRH7250 IRH7450SE IRH8054 IRH8150 2N6782 JANTX 2N6758 JANTX 2N6756 JANTX 2N6766 JANTX 2N6792 JANTX 2n6806 jantx
Showing first 20 results.