500 MILLION PARTS FROM 12000 MANUFACTURERS

DATASHEET SEARCH ENGINE

Top Results

Part Manufacturer Description Datasheet BUY
ISL6146AFUZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146EFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146BFUZ-T7A Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy
ISL6146EFUZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil Buy

J411 fet

Catalog Datasheet MFG & Type PDF Document Tags

transistor k2541

Abstract: K1398 SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface , MOS FET from the effects of static electricity. If there is a possibility that a voltage higher than that rated will applied to the MOS FET under the actual operating conditions, provide an external , FET. 2 Example Comparing Characteristics with a Transistor Containing a Resistor The ON resistance of a MOS FET is almost independent of the current and shows almost a straight curve in the region
NEC
Original
Abstract: PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 â'" 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down ï¬'ange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal , 46.10 40.74 18.60 57.50 2.88 â'" j4.11 Load Pull at Max Efficiency Point â'" 16 Âus Infineon Technologies
Original
H-36265-2 1400MH

2N4360

Abstract: J411 fet //nlitrnn_ iFia@BOJ©Tr ©A'um©® mm M Devices. Inc. O R D E R IN G IN F O R M A T IO N (FOtHL® ItM FO K gir l® The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego's standard for Q . A. production, marketing and sales. All products that deviate from the standard JEDEC , .0 J410 J411 J412 KK4391 KK4392 KK4393 MEM511 MFE823 MFE823 m :f e 2000 DCN 2.3 DCN 2.3 DCN 2.3 DCN
-
OCR Scan
2N4360 J411 fet 2N3459 Solitron 2N3821 TIS58 2N5906 MIL-SDT-750 MIL-SDT-883 2N5114 KD5I14M 2N2386 2N2497

E112 jfet

Abstract: siliconix E412 =25uV typ) · High Gain (Yfs=30,000uS min) Photo FET · Light Sensitive N-Channel JFET · Second Source , Transistors Lateral DMOS FET Switches MOSFETs N Channel Enhancement Mode P/N N & P Channel , FET D3 P/N D3 D3 D3 LS627 D3 D3 uAmWcm2 min 6.4 BiFET Amplifier D5 D6 , J410 J411 J412 J420 J421 J500 J501 J502 J503 J504 J505 J506 J507 J508 J509 J510 J511
Linear Integrated Systems
Original
E112 jfet siliconix E412 NPD5564 jfet e300 NPD5566 DATA SHEET OF FET BFW10 LS845 LS842 LS4392 LS4391 LS4393 LS5912

2N3456 equivalent

Abstract: TIS88A equivalent M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N , J305 J309 J310 J410 J411 J412 KK4391 KK4392 KK4393 MEM511 MFE823 MFE823 MFE2000 MFE2001 MFE2004 MFE2005 , U A L M O S FET CHIP NUMBER m m CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum , ©ATAH®( P -C H A N N E L E N H A N C E M E N T D U A L M Ô S FET © m \ P W ( ? [ l [Q)tF[M][PU DRAIN , C E M E N T D U A L M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .035"
-
OCR Scan
2N3456 equivalent TIS88A equivalent 2n5952 equivalent 2N5248 equivalent 2n3820 equivalent 2n5245 equivalent KD5114M 2N2498 2N2499 2N2500 2N2606 2N2607

siliconix fet

Abstract: Transistor E112 FET N-Channel FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , use the FET Cross Reference and FET Cross Reference and Index , Index Tips on Selecting the Right FET for your How to Choose the Correct FET for your JFET
-
OCR Scan
siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03

76V0A

Abstract: MCHP-045-V31-1 : MOSFET VOLTAGE STRESS MOSFETVoltageStress = 2 × ( V O + V FET + V DROP ) The maximum transition
Microchip Technology
Original
AN1335 76V0A MCHP-045-V31-1 48V 100w SMPS forward High-Speed PWM DS70323 buck boost converter closed loop in matlab VDC-76 PIC33F DS01335A-

FET k163

Abstract: AMD 140 Socket AM3 ) CLK_TO_SCRUZ U2.AL16 PLL6 Expansion Prototype Card (PROTO1) (J4.11) 14 Destination Altera
Altera
Original
FET k163 AMD 140 Socket AM3 BCM91250A EPM3256ATC144-7 60R100M6A QTE-080 PCI-BOARD/S25 PCI-BOARD/S60 EP1S25F1020 EP1S60F1020 100-MH 133-MH

la 4440 amplifier circuit diagram 300 watt

Abstract: 2sd323 MJ13331 4-537 4-539 4-539 4-545 4-545 M J411 M J413 M J423 MJ431 M J802 4-404 4-406
-
OCR Scan
la 4440 amplifier circuit diagram 300 watt 2sd323 diode LT 7229 DA 3807 pdf transistor 2N5630 DIAC 1N5761 AN-466 AN-568 AN-784A

MC2259

Abstract: mc2257 . 2N5115 P-Channel J FET Switch , . 10-89 J107 N-Channel J FET S w itc h , . 10-92 J 175 P-Channel J FET S w itc h
-
OCR Scan
MC2259 mc2257 3N214 MC9718P MC9713P MC9802P

OPB AC97 Sound Controller

Abstract: digital mixer verilog code at 1 S s kHz) of a FET. The operating point is determined by l0 with a short-circuit between gate and
Xilinx
Original
UG069 OPB AC97 Sound Controller digital mixer verilog code MGTs transistor C458 DB9 RJ45 AC97 412/R
Showing first 20 results.