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Part Manufacturer Description Datasheet BUY
DB2J41100L Panasonic Electronic Components Rectifier Diode, Schottky, 1 Element, 1A, 40V V(RRM), Silicon, HALOGEN FREE AND ROHS COMPLIANT, SMINI2-F5-B, SC-90A, 2 PIN visit Digikey
RNC55J4112BSB14 Vishay Dale RES 41.1K OHM 1/8W .1% AXIAL visit Digikey
SQJ411EP-T1_GE3 Vishay Siliconix MOSFET P-CH 12V 60A SO8 visit Digikey
ISL6146BFRZ-T Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146BFRZ-TK Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil
ISL6146EFRZ Intersil Corporation Low Voltage ORing FET Controller; DFN8, MSOP8; Temp Range: -40° to 125°C visit Intersil

J411 fet

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: SMALL-SIGNAL MOS FET SERIES Signal MOS FET A wide line-up from small-signal interface , MOS FET from the effects of static electricity. If there is a possibility that a voltage higher than that rated will applied to the MOS FET under the actual operating conditions, provide an external , FET. 2 Example Comparing Characteristics with a Transistor Containing a Resistor The ON resistance of a MOS FET is almost independent of the current and shows almost a straight curve in the region NEC
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transistor k2541 K1398 K1484 K679A k1272 k1482 07210-902-G D11050EJ4V0PF00
Abstract: PTVA120501EA Thermally-Enhanced High Power RF LDMOS FET 50 W, 50 V, 1200 â'" 1400 MHz Description The PTVA120501EA LDMOS FET is designed for use in power amplifier applications in the 1200 to 1400 MHz frequency band. Features include high gain and thermally-enhanced package with bolt-down ï¬'ange. Manufactured with Infineon's advanced LDMOS process, this device provides excellent thermal , 46.10 40.74 18.60 57.50 2.88 â'" j4.11 Load Pull at Max Efficiency Point â'" 16 Âus Infineon Technologies
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H-36265-2 1400MH
Abstract: //nlitrnn_ iFia@BOJ©Tr ©A'um©® mm M Devices. Inc. O R D E R IN G IN F O R M A T IO N (FOtHL® ItM FO K gir l® The following is the product code index for J-FET and MOS FET DIE/WAFERS having 2N, 3N IEDEC prefixes. This product code index is Solitron San Diego's standard for Q . A. production, marketing and sales. All products that deviate from the standard JEDEC , .0 J410 J411 J412 KK4391 KK4392 KK4393 MEM511 MFE823 MFE823 m :f e 2000 DCN 2.3 DCN 2.3 DCN 2.3 DCN -
OCR Scan
2N4360 2N3459 Solitron 2N3821 2N5906 U1898E TIS58 MIL-SDT-750 MIL-SDT-883 2N5114 KD5I14M 2N2386 2N2497
Abstract: =25uV typ) · High Gain (Yfs=30,000uS min) Photo FET · Light Sensitive N-Channel JFET · Second Source , Transistors Lateral DMOS FET Switches MOSFETs N Channel Enhancement Mode P/N N & P Channel , FET D3 P/N D3 D3 D3 LS627 D3 D3 uAmWcm2 min 6.4 BiFET Amplifier D5 D6 , J410 J411 J412 J420 J421 J500 J501 J502 J503 J504 J505 J506 J507 J508 J509 J510 J511 Linear Integrated Systems
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E112 jfet siliconix E412 NPD5564 jfet e300 DATA SHEET OF FET BFW10 NPD5566 LS845 LS842 LS4392 LS4391 LS4393 LS5912
Abstract: M f l® The following is the product code index lor J-FET and MOS FET DIE/WAFERS having 2N, 3N , J305 J309 J310 J410 J411 J412 KK4391 KK4392 KK4393 MEM511 MFE823 MFE823 MFE2000 MFE2001 MFE2004 MFE2005 , U A L M O S FET CHIP NUMBER m m CONTACT METALLIZATION Top Contact: > 12,000 A Aluminum , ©ATAH®( P -C H A N N E L E N H A N C E M E N T D U A L M Ô S FET © m \ P W ( ? [ l [Q)tF[M][PU DRAIN , C E M E N T D U A L M O S FET CHIP NUMBER CONTACT METALLIZATION Top Contact: > A Aluminum .035" -
OCR Scan
2N3456 equivalent TIS88A equivalent 2n5952 equivalent 2n5245 equivalent 2n3820 equivalent 2N5248 equivalent KD5114M 2N2498 2N2499 2N2500 2N2606 2N2607
Abstract: FET Design Catalog © 1979 Siliconix incorporated Printed In U.S.A. Siliconix incorporated reserves , use the FET Cross Reference and FET Cross Reference and Index , Index Tips on Selecting the Right FET for your How to Choose the Correct FET for your JFET -
OCR Scan
siliconix fet Transistor E112 FET N-Channel JFET TRANSISTOR REPLACEMENT GUIDE j201 jfet bfw10 terminals JFET BFW10 SPECIFICATIONS 4856a mosfet 867-C 1130669-CSEL-BR J-23548 K24123 NZ3766 53-C-03
Abstract: : MOSFET VOLTAGE STRESS MOSFETVoltageStress = 2 × ( V O + V FET + V DROP ) The maximum transition Microchip Technology
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AN1335 76V0A MCHP-045-V31-1 48V 100w SMPS forward High-Speed PWM DS70323 VDC-76 PIC33F DS01335A-
Abstract: ) CLK_TO_SCRUZ U2.AL16 PLL6 Expansion Prototype Card (PROTO1) (J4.11) 14 Destination Altera Altera
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FET k163 AMD 140 Socket AM3 BCM91250A EPM3256ATC144-7 60R100M6A QTE-080 PCI-BOARD/S25 PCI-BOARD/S60 EP1S25F1020 EP1S60F1020 100-MH 133-MH
Abstract: MJ13331 4-537 4-539 4-539 4-545 4-545 M J411 M J413 M J423 MJ431 M J802 4-404 4-406 -
OCR Scan
DA 3807 pdf transistor diode LT 7229 2sd323 THYRISTOR br 403 SDT430 LA 4301 AN-466 AN-568 AN-784A
Abstract: . 2N5115 P-Channel J FET Switch , . 10-89 J107 N-Channel J FET S w itc h , . 10-92 J 175 P-Channel J FET S w itc h -
OCR Scan
MC2259 mc2257 1N4003 germanium diode specification 3N214 MC9718P MC9713P
Abstract: at 1 S s kHz) of a FET. The operating point is determined by l0 with a short-circuit between gate and Xilinx
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UG069 OPB AC97 Sound Controller digital mixer verilog code MGTs transistor C458 J511 LXT972 412/R
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