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J310 Datasheet

Part Manufacturer Description PDF Type
J310 Calogic N-Channel JFET High Frequency Amplifier Original
J310 Fairchild Semiconductor N-Channel RF Amplifier Original
J310 Fairchild Semiconductor N-Channel RF Amplifier Original
J310 Fairchild Semiconductor N-Channel RF Amplifier Original
J310 InterFET N-Channel silicon junction field-effect transistor Original
J310 Linear Integrated Systems TRANS JFET N-CH 60MA 3TO-92 Original
J310 On Semiconductor J310 - TRANSISTOR UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, JFET, TO-92, CASE 29-11, TO-226, 3 PIN, FET RF Small Signal Original
J310 On Semiconductor TRANS JFET N-CH 25V 60MA 3TO-92 Original
J310 On Semiconductor JFET VHF/UHF Amplifiers Original
J310 Philips Semiconductors TRANS JFET N-CH 25V 60MA 3TO-92 AMMO Original
J310 Philips Semiconductors N-Channel Silicon FET Original
J310 Siliconix N-Channel JFETs Original
J310 Temic Semiconductors N-Channel JFETs Original
J310 Vishay TRANS JFET N-CH 3TO-226AA Original
J310 Intersil Shortform Data Book 1983/4 Scan
J310 Intersil Data Book 1981 Scan
J310 Intersil N-channel JFET high frequency amplifier. Scan
J310 Motorola European Master Selection Guide 1986 Scan
J310 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
J310 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
Showing first 20 results.

J310

Catalog Datasheet MFG & Type PDF Document Tags

j310 equivalent

Abstract: J310 . vDS (V) Tj = 25 °C. Fig.11 Typical output characteristics; J310. vGs (V) VDS=10V;Tj = 25 °C. Fig.12 Typical transfer characteristics; J310. 1996 Jul 30 711Gñ2b OlDbS^T Dbt. This Material , ;J309; J310 FEATURES â'¢ Low noise â'¢ Interchangeability of drain and source connections â'¢ High , J308 -1 -6.5 V J309 -1 -4 V J310 -2 -6.5 V Idss drain current VGS = 0; Vds = 10V J308 12 60 mA J309 12 30 mA J310 24 60 mA Ptot total power dissipation up to Tamb = 50 °C - 400 mW
-
OCR Scan
j310 equivalent J310 applications J309 Transistor J310 J308 MCD221

J310

Abstract: Transistor J310 U309/J309/MMBFJ309/U310/J310/MMBFJ310 National Æ Â Semiconductor U309 U310 J309 J310 , J309 J310 - 1 .0 - 2 .0 - 4 .0 - 6 .5 nA /l a A VGS(off) Gate Source Cutoff Voltage (V qS = 10 , 10 Vdc, Vqs = 0) Gate-Source Forward Voltage (Vqs = 0, Iq = 1.0 mAdc) J309 J310 12 24 30 60 1.0 mA , Transconductance (Vos = 10 Vdc, lD = 10 mAdc, f = 100 MHz) J309 J310 0.7 0.5 0.25 mmhos Re|yos| mmhos 10 16 dB 12 mmhos 10-75 U309/J309/MMBFJ309/U310/J310/MMBFJ310 N-Channel JPET
-
OCR Scan
U310 13000 BR transistor N-Channel JFET transistor transistor u310 j309 transistor U309 U309/J309/MMBFJ309/U310/J310/MMBFJ310 MMBFJ309

J310

Abstract: j310 equivalent J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features · · · · This device is , interchangeable. MMBFJ309 MMBFJ310 J309 J310 G S G S SOT-23 TO-92 D D Mark MMBFJ309 , FR-4 PCB 1.6" X 1.6" X 0.06". © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 1 J309 / J310 / MMBFJ309 / MMBFJ310 - N-Channel RF Amplifier , Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 2 J309 / J310
Fairchild Semiconductor
Original
rf fairchild transistor 100mhz amplifier J310G N-CHANNEL dual gate ultra low noise vhf LOW NOISE AMPLIFIER J309-J310 MMBFJ309-310

j310 replacement

Abstract: J310 equivalent J310 N-CHANNEL JFET Linear Systems replaces discontinued Siliconix J310 The J310 is a high , REPLACEMENT FOR SILICONIX J310 OUTSTANDING HIGH FREQUENCY GAIN LOW HIGH FREQUENCY NOISE ABSOLUTE MAXIMUM , 100dB Maximum Power Dissipation Easily matched to 75 input Continuous Power Dissipation 350mW J310 , Voltage or Gate to Source Voltage 25V Oscillators J310 ELECTRICAL CHARACTERISTICS @ 25 , J310 DYNAMIC ELECTRICAL CHARACTERISTICS @ 25°C (unless otherwise noted) SYMBOL CHARACTERISTIC MIN
Micross Components
Original
j310 replacement Siliconix J310 J310 jfet j310 jfet to92 J310 -TO92 105MH 450MH

J309

Abstract: J309-J310 ON Semiconductort JFET VHF/UHF Amplifiers N­Channel ­ Depletion J309 J310 ON Semiconductor , 1.0 nAdc) J309 J310 V(BR)GSS IGSS ­ ­ VGS(off) ­1.0 ­2.0 ­ ­ ­4.0 ­6.5 ­ ­ ­1.0 ­1.0 nAdc µAdc Vdc ­25 , ) Gate­Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) IDSS J309 J310 VGS(f) 12 24 ­ ­ ­ ­ 30 60 1.0 Vdc mAdc , /D J309 J310 Characteristic Symbol Min Typ Max Unit SMALL­SIGNAL CHARACTERISTICS , ) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. Re(yis) J309 J310 Re(yos) Gpg ­ ­ ­ ­ 0.7
ON Semiconductor
Original
20.000 G 226AA J309/D

vk200 choke

Abstract: MVM010W +125°C) Gate Source Cutoff Voltage (Vq s = 10 Vdc, Iq = 1-0 nAdc) J308 J309 J310 V(BR)GSS 'GSS - -2 , 0) to s s mAdc 12 12 24 J308 J309 J310 v GS(f) - - - - 60 30 60 1.0 Vdc , Input Conductance (VDS = 10 Vdc, lD = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Re(yos) 0.7 0.7 0.5 , Diodes Device Data Hn 4-151 J308 J309 J310 ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise , 10 mAdc, f = 1.0 kHz) J308 J309 J310 9os 9fg J308 J309 J310 9og J308 J309 J310 c gd Cgs - 150 100
-
OCR Scan
vk200 choke MVM010W MVM010 U310JFET

j310

Abstract: J310 equivalent  -, . , Discrete POWER & Signal National , , . Technologies Semiconductor' J309 J310 TO , Characteristics TA = 25°C unless otherwise noted Symbol Characteristic Max Units J309/ J310 'MMBFJ309 PD , Voltage VDS = 10 V, lD = 1.0 nA J309 J310 - 1.0 -2.0 -4.0 - 6.5 V V ON CHARACTERISTICS tass Zero-Gate Voltage Drain Current* VDs = 10 V, VGs = 0 J309 J310 12 24 30 60 mA mA VGS(f) Gate-Source , Input Conductance VDS = 10, lD = 10 mA, f = 100 MHz J309 J310 0.7 0.5 mmhos mmhos Rejyos
-
OCR Scan
z60b 4dcm J309 application note S01130

vk200 choke

Abstract: J310 jfet ON Semiconductort J308 J309 J310 JFET VHF/UHF Amplifiers N­Channel - Depletion ON , Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) IGSS VGS(off) J308 J309 J310 Vdc ON CHARACTERISTICS Zero­Gate­Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 Gate­Source Forward Voltage , VGS(f) 1 mAdc Vdc Publication Order Number: J308/D J308 J309 J310 Characteristic , J310 mmhos Common­Source Output Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yos
ON Semiconductor
Original
U-310 variable trimmer

J310

Abstract: J309 .11 Typical output characteristics; J310. 1996 Jul 30 -2 VGS (V) VDS (V) Fig.12 Typical transfer characteristics; J310. 7 Philips Semiconductors Product specification N-channel , DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect , transistors FEATURES J308; J309; J310 PINNING - TO-92 · Low noise PIN SYMBOL · , -4 V -2 -6.5 V J308 12 60 mA J309 12 30 mA J310 24 60
-
Original
J310 Application Note MCD212 MCD217 MAM197 MBC014

J310

Abstract: J309 application note .11 Typical output characteristics; J310. 1996 Jul 30 -2 VGS (V) VDS (V) Fig.12 Typical transfer characteristics; J310. 7 Philips Semiconductors Product specification N-channel , DISCRETE SEMICONDUCTORS DATA SHEET J308; J309; J310 N-channel silicon field-effect , transistors FEATURES J308; J309; J310 PINNING - TO-92 · Low noise PIN SYMBOL DESCRIPTION , -4 V J310 -2 -6.5 V J308 12 60 mA J309 12 30 mA J310 24
Philips Semiconductors
Original
VHF Transistors

J310G

Abstract: j310 equivalent / Bulk TO-92 (Pb-Free) J310 TO-92 J310G 1000 Units / Bulk TO-92 (Pb-Free) J310RLRP TO-92 J310RLRPG 2000 Units / Tape & Ammo Box TO-92 (Pb-Free) J310ZL1 TO , J309, J310 Preferred Device JFET VHF/UHF Amplifiers N-Channel - Depletion Features · , Number: J309/D J309, J310 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted , +125°C) IGSS Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) VGS(off) J309 J310
ON Semiconductor
Original
J310ZL1G J309G

j310

Abstract: J310 equivalent J309 / J310 / MMBFJ309 / MMBFJ310 J309 J310 MMBFJ309 MMBFJ310 G G S TO-92 D S , on FR-4 PCB 1.6" X 1.6" X 0.06." ã1997 Fairchild Semiconductor Corporation 5-30 J309 / J310 , 5.0 *Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0% 5-31 J309 / J310 / MMBFJ309 , Forward Transadmittance 5-32 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier , Transadmittance 5-33 J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier (continued) Typical
Fairchild Semiconductor
Original
fr 309

vk200 choke

Abstract: j310 Depletion 1 DRAIN J308 J309 J310 MAXIMUM RATINGS Rating Drain-Source Voltage Gate-Source Voltage , 1.0 nAdc) J308 J309 J310 V (BR)G SS 'G S S - - VGS(off) -1.0 -1.0 -2,0 - - -6.5 -4.0 -6.5 -1.0 , V d c ,V G S = 0) fD S S J308 J309 J310 VGS{f) 12 12 24 - - - - - mAdc 60 30 60 1.0 Vdc , Input Conductance (V q s = 10 Vdc, Iq = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 Fle(yo s) 0.7 0.7 , Diodes Device Data 4-151 J308 J309 J310 ELECTRICAL CHARACTERISTICS (Ta = 25"C unless otherwise
-
OCR Scan
j310c SM 4151

motorola U310

Abstract: Motorola J310 J308 N­Channel - Depletion J309 1 DRAIN J310 3 GATE Motorola Preferred Devices 2 , Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) IGSS VGS(off) J308 J309 J310 Vdc ON CHARACTERISTICS Zero ­ Gate ­Voltage Drain Current(1) (VDS = 10 Vdc, VGS = 0) IDSS J308 J309 J310 Gate­Source , Common­Source Input Conductance (VDS = 10 Vdc, ID = 10 mAdc, f = 100 MHz) Re(yis) J308 J309 J310 mmhos , , FETs and Diodes Device Data © Motorola, Inc. 1997 1 J308 J309 J310 ELECTRICAL CHARACTERISTICS
Motorola
Original
motorola U310 Motorola J310 U310 motorola motorola 539 Allen-Bradley 100-k vk200 rfc with 6 turns

j310

Abstract: j310 equivalent ON Semiconductort JFET VHF/UHF Amplifiers N- Channel - Depletion J309 J310 ON Semiconductor , = 1.0 nAdc) J309 J310 V(BR)GSS IGSS - - VGS(off) - 1.0 - 2.0 - - - 4.0 - 6.5 - - -1.0 -1.0 nAdc µAdc , ) Gate-Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) IDSS J309 J310 VGS(f) 12 24 - - - - 30 60 1.0 Vdc mAdc , : J309/D J309 J310 Characteristic Symbol Min Typ Max Unit SMALL- SIGNAL CHARACTERISTICS , ) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. Re(yis) J309 J310 Re(yos) Gpg - - - - 0.7
ON Semiconductor
Original
Abstract: '92 (Pbâ'Free) J310 TOâ'92 J310G 1000 Units / Bulk TOâ'92 (Pbâ'Free) J310RLRP TOâ'92 J310RLRPG 2000 Units / Tape & Ammo Box TOâ'92 (Pbâ'Free) J310ZL1 TOâ'92 J310ZL1G 2000 , J309, J310 Preferred Device JFET VHF/UHF Amplifiers Nâ'Channel â'" Depletion Features http , overall value. Publication Order Number: J309/D J309, J310 ELECTRICAL CHARACTERISTICS (TA = 25Â , Gate Source Cutoff Voltage (VDS = 10 Vdc, ID = 1.0 nAdc) VGS(off) J309 J310 Vdc ON ON Semiconductor
Original

Transistor J310

Abstract: J309 MMBFJ309 MMBFJ310 J309 J310 G D G S TO-92 SOT-23 D S Mark: 6U / 6T , 1.6" X 0.06." ã 1997 Fairchild Semiconductor Corporation Max Units J309 / J310 350 2.8 125 *MMBFJ309 225 1.8 357 556 mW mW/°C °C/W °C/W J309 / J310 / MMBFJ309 / MMBFJ310 , °C VDS = 10 V, ID = 1.0 nA J309 J310 - 25 V - 1.0 - 1.0 - 4.0 - 6.5 30 60 1.0 - 1.0 , * VDS = 10 V, VGS = 0 VGS(f) Gate-Source Forward Voltage VDS = 0, IG = 1.0 mA J309 J310
Fairchild Semiconductor
Original
F63TNR PN2222N CBVK741B019

j310

Abstract: J309 ON Semiconductort JFET VHF/UHF Amplifiers N­Channel ­ Depletion J309 J310 ON Semiconductor , 1.0 nAdc) J309 J310 V(BR)GSS IGSS ­ ­ VGS(off) ­1.0 ­2.0 ­ ­ ­4.0 ­6.5 ­ ­ ­1.0 ­1.0 nAdc µAdc Vdc ­25 , ) Gate­Source Forward Voltage (VDS = 0, IG = 1.0 mAdc) IDSS J309 J310 VGS(f) 12 24 ­ ­ ­ ­ 30 60 1.0 Vdc mAdc , : J309/D J309 J310 Characteristic Symbol Min Typ Max Unit SMALL­SIGNAL CHARACTERISTICS , ) 1. Pulse Test: Pulse Width v 300 µs, Duty Cycle v 3.0%. Re(yis) J309 J310 Re(yos) Gpg ­ ­ ­ ­ 0.7
ON Semiconductor
Original
Abstract: J309 / J310 / MMBFJ309 / MMBFJ310 N-Channel RF Amplifier Features â'¢ â'¢ â'¢ â'¢ This , interchangeable. MMBFJ309 MMBFJ310 J309 J310 G S G S SOT-23 TO-92 D D Mark MMBFJ309 , Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 1 J309 / J310 / MMBFJ309 , : Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0% © 2010 Fairchild Semiconductor Corporation J309 / J310 / MMBFJ309 / MMBFJ310 Rev. A1 www.fairchildsemi.com 2 J309 / J310 / MMBFJ309 / MMBFJ310 â'" N-Channel Fairchild Semiconductor
Original

TRANSISTORS 132 GD

Abstract: J308 thru J310* CASE 29-04, STYLE 5 TO-92 (TO-226AA) MAXIMUM RATINGS Rating D rain-S ource V , ) Gate Source C u to ff Voltage (VDs = 10 V, l D = 1.0 nA) J308 J309 J310 - - - v G S(off) - , CHARACTERISTICS Zero-G ate-Voltage D rain C u rrent! 1) (VDS - 10 V, V q s - 0) J308 J309 J310 v GS(f) 'DSS 12 12 , m A * f = 100 J308 J309 J310 Re(yo s ) Re(yis) 0.7 0.7 0.5 0.25 16 12 12 - m m ho s dB m m ho s m m , kHz) J308 J309 J310 Re(yfg) Refyjg) 9fs C o m m on-S ou rce O u tp u t C onductance ( V d s =
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OCR Scan
TRANSISTORS 132 GD
Abstract: J308 thru J310* CASE 29-04, STYLE 5 TO-92 (TO-226AA) MAXIMUM RATINGS Rating Drain-Source , , V G S = 01 J308 J309 J310 V G S lfl 'D S S 12 12 24 - - - mA 60 30 60 1.0 Vdc - - , Conductance (V q s = 10 V , I q = 10 m A , f = 100 MHz) R e ly js ) J308 J3 09 J310 R e(yo s ) 0.7 0.7 0.5 , MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES J308 thru J310 ELECTRICAL CHARACTERISTICS , MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 4-47 J308 thru J310 F IG U R E 1 - 450 MHz COMMON G -
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