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LT1681ESW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TRPBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ISW#PBF Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW#TR Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT1681ESW Linear Technology LT1681 - Dual Transistor Synchronous Forward Controller; Package: SO; Pins: 20; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

J1 TRANSISTOR

Catalog Datasheet MFG & Type PDF Document Tags

2N1305

Abstract: J1 TRANSISTOR maximum diameter of the actual device. 9. All 3 leads. FIGURE 1. Physical dimensions of transistor types 2N1302 through 2N1309(TO-5). 3 MÏL-S-Ã9500/126C GAGE OUTLINE OPTIONAL J1 TRANSISTOR REF, 1 â'"I , SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, GERMANIUM, HIGH-FREQUENCY NPN TYPES 2N1302, 2N1304, 2N1306 , Marking. The following marking specified in MIL-S-19500 may be omitted from the body of the transistor at , plane .054».001, -.000 (1.37+.03, -.00 mm) below the seating plane of the transistor, maximum diameter
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2N1308 2N1303 2N1305 2N1307 J1 TRANSISTOR Application of 2n1304 2n1308 jan MIL-S-19500/126C MIL-S-19500/126B

1090mhz

Abstract: JESD22-A114 , Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Introduction Table 1. Thermal , transistor suitable for pulsed applications. Thermal Resistance (T CASE = 70 °C) The PRA1000 is a versitle , MOS devices should be observed. PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME , LDMOS RF Power Transistor DME, TACAN, TCAS, MODE S, Capacitance vs. Voltage 200 30 V GS = 0 V , ) Cds and Cgs (pF 160 PRA1000 300 Watt, 36V, Pulsed LDMOS RF Power Transistor DME, TACAN, TCAS
TriQuint Semiconductor
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1090mhz JESD22-A114 960-1215M 1025-1150MH 1030-1090MH 960-1215MH

SMD l33 Transistor

Abstract: BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 2 â'" 12 July 2013 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar , BLU6H0410L(S)-600P NXP Semiconductors Power LDMOS transistor 2. Pinning information Table 2 , )-600P NXP Semiconductors Power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , Power LDMOS transistor Table 7. RF characteristics Test signal: 2-Tone; Tcase = 25 ï'°C unless
NXP Semiconductors
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SMD l33 Transistor 2002/95/EC 6H0410LS-600P

UT-090C-25

Abstract: J346 BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 - 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , of 15 NXP Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor Table 7. RF characteristics .continued RF
NXP Semiconductors
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UT-090C-25 J346
Abstract: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 2 â'" 16 December 2011 Product data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast , Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description , NXP Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Thermal , reserved. 3 of 15 BLF884P; BLF884PS NXP Semiconductors UHF power LDMOS transistor Table 7 NXP Semiconductors
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907 TRANSISTOR smd

Abstract: BLF884P; BLF884PS UHF power LDMOS transistor Rev. 1 - 13 October 2011 Objective data sheet 1. Product profile 1.1 General description A 350 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , 2 of 16 NXP Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF884P; BLF884PS UHF power LDMOS transistor Table 7. RF characteristics .continued RF
NXP Semiconductors
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907 TRANSISTOR smd

smd transistor l32

Abstract: UT-090C-25 BLU6H0410L-600P; BLU6H0410LS-600P Power LDMOS transistor Rev. 1 - 26 April 2012 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for radar , Semiconductors BLU6H0410L(S)-600P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , Power LDMOS transistor 5. Thermal characteristics Table 5. Rth(j-c) Zth(j-c) Thermal characteristics , 15 NXP Semiconductors BLU6H0410L(S)-600P Power LDMOS transistor Table 7. RF
NXP Semiconductors
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smd transistor l32 ST EZ 711 253 NXP amplifier EZ 711 253 J1072

BLF871

Abstract: J1930 BLF871 UHF power LDMOS transistor Rev. 02 - 5 March 2009 Preliminary data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , ) BLF871 NXP Semiconductors UHF power LDMOS transistor I I I I I I I Integrated ESD , Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1
NXP Semiconductors
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J1930

smd transistor l32

Abstract: SMD EZ 648 BLF0510H6600P Power LDMOS transistor Rev. 1 - 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications and , BLF0510H6600P Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 Pinning Description , transistor 6. Characteristics Table 6. DC characteristics Tj = 25 C; per section unless otherwise , Semiconductors BLF0510H6600P Power LDMOS transistor 400 Coss (pF) 300 001aam579 200 100 0 0 20
NXP Semiconductors
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SMD EZ 648 001aan207
Abstract: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 â'" 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 , Semiconductors UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with NXP Semiconductors
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Abstract: BLF871; BLF871S UHF power LDMOS transistor Rev. 04 â'" 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 , (4.3 MHz from center frequency) BLF871; BLF871S NXP Semiconductors UHF power LDMOS transistor , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with NXP Semiconductors
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BLF871

Abstract: 900 mhz av transmitter BLF871; BLF871S UHF power LDMOS transistor Rev. 04 - 19 November 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , Semiconductors UHF power LDMOS transistor Integrated ESD protection Excellent ruggedness High power gain , Semiconductors UHF power LDMOS transistor 4. Limiting values Table 4. Limiting values In accordance with
NXP Semiconductors
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900 mhz av transmitter DVB-T transistor amplifier rogers 5880 OFDM transmitter UHF UHF/UHF/blf871

uhf amplifier design Transistor

Abstract: D2140 BLF871 UHF power LDMOS transistor Rev. 03 - 21 September 2009 Product data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , ) BLF871 NXP Semiconductors UHF power LDMOS transistor I I I I I I I Integrated ESD , Semiconductors UHF power LDMOS transistor 5. Thermal characteristics Table 5. Symbol Rth(j-c) [1
NXP Semiconductors
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uhf amplifier design Transistor D2140 TRANSISTOR GENERAL DIGITAL L6 of transistor C 4212
Abstract: MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak, DC-3500 MHz, 1 ms Pulse, 10 , Depletion Mode Transistor Common-Source Configuration Broadband Class AB Operation Thermally Enhanced Cu , unmatched Gallium Nitride (GaN) on Silicon Carbide (SiC) RF power transistor optimized for civilian and , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak , : 81.44.844.8296 / Fax: 81.44.844.8298 MAGX-000035-045000 GaN on SiC HEMT Pulsed Power Transistor 45 W Peak M/A-COM
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MAGX-000035045000 MAGX-S10035-045000

MAX1669EVKIT

Abstract: P1 TRANSISTOR monitors the temperature of an external diode-connected transistor and converts the temperature to an 8-bit, 2-wire serial data. A 2N3906 temperature-sensor transistor comes soldered to the board in a SOT23 package. Removing the transistor allows the board to connect through a twisted pair, to a remote diode , J1 1 J2, J3, JU1, JU2, JU3, JU5, JU7 JU4, JU6 DESCRIPTION 0.1µF, 16V X7R ceramic , 3 1 1 1 1 1 1 1 1 5 None 1 None 1 DESCRIPTION PNP bipolar transistor
Maxim Integrated Products
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MAX1669 MAX1669EVSYS MAX1669EVKIT EMK107BJ104KA P1 TRANSISTOR serial Parallel-Printer Interface IC mmbt3904 motorola CMPT3906 GRM39X7R104K016

SMD EZ 648

Abstract: smd transistor l32 BLF988; BLF988S Power LDMOS transistor Rev. 1 - 9 October 2012 Objective data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for transmitter applications , Semiconductors BLF988; BLF988S Power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , NXP Semiconductors BLF988; BLF988S Power LDMOS transistor 5. Thermal characteristics Table 5 , Semiconductors BLF988; BLF988S Power LDMOS transistor Table 8. RF characteristics .continued RF
NXP Semiconductors
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smd transistor l31 smd transistor L33 J15-12 J2151

J0266

Abstract: J1930 BLF871 UHF power LDMOS transistor Rev. 01 - 18 December 2008 Objective data sheet 1. Product profile 1.1 General description A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. The transistor can deliver 100 W broadband from HF to 1 GHz. The , Semiconductors BLF871 UHF power LDMOS transistor I I I I I I I Integrated ESD protection Excellent , December 2008 2 of 18 NXP Semiconductors BLF871 UHF power LDMOS transistor 5. Thermal
NXP Semiconductors
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J0266 J-0834 001aaj288

BLF888A

Abstract: SMD l33 Transistor BLF888A; BLF888AS UHF power LDMOS transistor Rev. 2 - 1 March 2011 Preliminary data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast , ; BLF888AS NXP Semiconductors UHF power LDMOS transistor 2. Pinning information Table 2. Pinning , transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Rth(j-c , power LDMOS transistor Table 7. RF characteristics .continued RF characteristics in NXP
NXP Semiconductors
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dvb-t2 L33 SMD transistor smd l33 702 TRANSISTOR smd SMD L32 transistor smd Q 865

P1 TRANSISTOR

Abstract: kit. The MAX1669 also monitors the temperature of an external diode-connected transistor and converts the temperature to an 8-bit, 2-wire serial data. A 2N3906 temperature-sensor transistor comes soldered to the board in a SOT23 package. Removing the transistor allows the board to connect through a , 631-847-3236 303-675-2150 408-573-4159 805-446-4850 C2 J1 J2, J3, JU1, JU2, JU3, JU5, JU7 JU4, JU6 N1 P1 , Component List (continued) DESIGNATION QTY DESCRIPTION PNP bipolar transistor Fairchild MMBT3906, Central
Maxim Integrated Products
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smd transistor L33

Abstract: SMD l33 Transistor BLF888A; BLF888AS UHF power LDMOS transistor Rev. 3 - 30 August 2011 Product data sheet 1. Product profile 1.1 General description A 600 W LDMOS RF power transistor for broadcast transmitter , Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 2. Pinning information Table 2. Pin 1 2 3 4 5 , 2011 2 of 17 NXP Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor 5. Thermal , Semiconductors BLF888A; BLF888AS UHF power LDMOS transistor Table 7. RF characteristics .continued RF
NXP Semiconductors
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