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J1 CLIP-THM 18874 Aavid Thermalloy (Alt: 032836) from €0.1503 (Sep 2016) Avnet Buy
J1 J4 - - 13 (Aug 2016) Chip One Exchange Buy
J1 TABG Aavid Thermalloy HEAT SINKS ;ROHS COMPLIANT: YES (Aug 2016) Newark element14 Buy
J1-00105 ETI Systems Joystick; Light Industrial; 2 Axis; Op LvrAng +/-12#; Op Temp -20 to +50degC 421 from $33.59 (Sep 2016) Allied Electronics Buy
J1-00105 ETI Systems JOYSTICK SWITCH, SPST, 5A, 250V 1 from $41.10 (Aug 2016) element14 Asia-Pacific Buy
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J1-00105 ETI Systems Input Devices PRECISION SWTCH STCK 33 from $31.77 (Sep 2016) Mouser Electronics Buy
J1-00105 ETI Systems JOYSTICK SWITCH, SPST, 5A, 250V; No. of Axes:2; Track Resistance:-; Supply Voltage Max:250V; No. of Switch Positions:-; Contact Current AC Max:5A; Contact Voltage AC Max:250V; Rotation Electrical Angle:24 ; Handle Style:Knob ;RoHS Compliant: Yes 42 from $34.59 (Aug 2016) Newark element14 Buy
J1-00105-S-G ETI Systems Joystick; 4 Switches; 5 Amp; 250 VAC; Load Dependent 63 from $107.57 (Sep 2016) Allied Electronics Buy
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J1-00105SG ETI Systems JOYSTICK SWITCH, SPST, 5A, 250V; No. of Axes:2; Track Resistance:-; Supply Voltage Max:250VAC; No. of Switch Positions:4 Position; Contact Current AC Max:5A; Contact Voltage AC Max:250V; Rotation Electrical Angle:-; Handle Style:- ;RoHS Compliant: Yes (Aug 2016) Newark element14 Buy
J1-2A1 ABB A9 NR 3PH SZ00 STR 120V from $110.19 (Sep 2016) Newark element14 Buy
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J1-2D ABB AB J12D A9 NR 3PH SZ00 STR,120V, A9 NR 3PH SZ00 STR,120V from $91.83 (Aug 2016) Newark element14 Buy
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J1-2J ABB AB J12J A9 NR 3PH SZ00 STR,120V, A9 NR 3PH SZ00 STR,120V from $91.83 (Aug 2016) Newark element14 Buy
J1-2M ABB AB J12M A9 NR 3PH SZ00 STR,120V, A9 NR 3PH SZ00 STR,120V from $91.83 (Aug 2016) Newark element14 Buy
J1-4L ABB A9 NR 3PH SZ00 STR 240V from $91.83 (Sep 2016) Newark element14 Buy
J1-4M ABB A9 NR 3PH SZ00 STR 240V from $91.83 (Aug 2016) Newark element14 Buy

J1 DIODE

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: Reflective PIN Diode Switch MA4AGSW5 V 1.00 MA4AGSW5 Schematic J3 J4 J5 J2 J1 ( Common , MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 , diode switch. AlGaAs anodes, which utilize M/A-COM's patent pending hetero-junction technology , mA per Diode 1. Exceeding any of these values may result in permanent damage AlGaAs SP5T Reflective PIN Diode Switch MA4AGSW5 V 1.00 Electrical Specifications @ 25 °C (On-Wafer Measurements ... M/A-COM
Original
datasheet

7 pages,
161.37 Kb

MA4BN1840-1 J4 diode J2 diode J3 diode J1 DIODE j6 diode TEXT
datasheet frame
Abstract: Current B1, B2 Reverse Voltage J0, J1, J2, B1, B2 Forward Diode Voltage Operating Temperature Storage , diode between the J0 and J1 ports is forward biased by applying 0 V to the J1 bias input port (pin 1 of , 1 of P1). Under this condition, the PIN diode connected between the J0 and J1 ports is reverse , across this diode is the arithmetic difference of the bias voltage applied to the J1 bias port and the DC , Surface Mount PIN Diode SP2T Switches MSW2030-203 MSW2030-203, MSW2031-203 MSW2031-203 & MSW2032-203 MSW2032-203 Series Datasheet ... Aeroflex / Metelics
Original
datasheet

16 pages,
713.21 Kb

MSW2030-203 MSW2031-203 MSW2032-203 TEXT
datasheet frame
Abstract: Reflective PIN Diode Switch MA4AGSW5 V 1.00 MA4AGSW5 Schematic J3 J4 J5 J2 J1 ( Common , MA4AGSW5 AlGaAs SP5T Reflective PIN Diode Switch Features n n n n n n n V 1.00 , , SP5T PIN diode switch. AlGaAs anodes, which utilize M/A-COM’s patent pending hetero-junction , . 50 V +/- 30 mA per Diode 1. Exceeding any of these values may result in permanent damage AlGaAs SP5T Reflective PIN Diode Switch MA4AGSW5 V 1.00 Electrical Specifications @ 25 °C ... M/A-COM
Original
datasheet

7 pages,
149.04 Kb

TEXT
datasheet frame
Abstract: high isolation states. In state 1 the series PIN diode between the J0 and J1 is forward biased by , B1 is connected to with –28 V bias to reverse bias the shunt diode between the J1 and B1 ports , connected between the J0 and J2 ports, between the J0 and J3 ports and the shunt diode between J1 and B1 , between the J0 and J1 ports, between the J0 and J3 ports and the shunt diode between J2 and B2 are each , Protection Description The MSW3103-310 MSW3103-310 and MSW3104-310 MSW3104-310 series of surface mount silicon PIN diode SP3T ... Aeroflex / Metelics
Original
datasheet

12 pages,
583.29 Kb

diode J3 MSW3103-310 MSW3104-310 TEXT
datasheet frame
Abstract: , J1, J2, B1, B2 Forward Diode Voltage Operating Temperature Storage Temperature Junction Temperature , 1 of P1). Under this condition, the PIN diode connected between the J0 and J1 ports is reverse , across this diode is the arithmetic difference of the bias voltage applied to the J1 bias port and the DC , silicon PIN diode SP2T switches can be used for high power transmit/receive (TR) switching or active , Moisture Sensitivity Level Rating PIN Diode switches are susceptible to damage from ESD events, as are all ... Aeroflex / Metelics
Original
datasheet

12 pages,
925.19 Kb

J1 DIODE SN60 MSW2040-204 MSW2041-204 TEXT
datasheet frame
Abstract: , J1, J2, B1, B2 Forward Diode Voltage Operating Temperature Storage Temperature Junction Temperature , 1 of P1). Under this condition, the PIN diode connected between the J0 and J1 ports is reverse , across this diode is the arithmetic difference of the bias voltage applied to the J1 bias port and the DC , silicon PIN diode SP2T switches can be used for high power transmit/receive (TR) switching or active , Moisture Sensitivity Level Rating PIN Diode switches are susceptible to damage from ESD events, as are all ... Aeroflex / Metelics
Original
datasheet

12 pages,
711.34 Kb

MSW2040-204 MSW2041-204 TEXT
datasheet frame
Abstract: J1, J2, J3 Port Reverse Voltage - B1, B2, B3 Port Forward Diode Voltage Operating Temperature Storage , SP3T switch, driver output V1A biases the series diode connected between switch ports J0 and J1, the driver output V1B biases the shunt diode connected between switch ports J1 and B1. Similarly driver , TTL-logic low. CTL 1 logic forward biases the series PIN diode between the J0 and J1 ports by applying 0 V , connected between the J0 and J2 ports, between the J0 and J3 ports and the shunt diode between J1 and B1 are ... Aeroflex / Metelics
Original
datasheet

17 pages,
949.56 Kb

MSW310X-310 MPD3T28125-700 ECJ1VB1E104K elj-fc4r7kf MSW3100-310 MSW3101-310 TEXT
datasheet frame
Abstract: , the PIN diode connected between the J0 and J1 ports is reverse biased thus isolating the J1 RF port , Description The MSW2040-204 MSW2040-204 and MSW2041-204 MSW2041-204 series of surface mount silicon PIN diode SP2T switches can be , Level Rating PIN Diode switches are susceptible to damage from ESD events, as are all semiconductors , . DS 13251 Rev. D, ECN 12442 Revision Date: 11/27/2012 SP2T PIN Diode Switches Pinout SP2T Schematic Truth Table Port J0 to Port J1 Port J0 to Port J2 Bias: J1 (notes 1, 2) Low loss ... Aeroflex / Metelics
Original
datasheet

12 pages,
610.59 Kb

MSW2040-204 MSW2041-204 TEXT
datasheet frame
Abstract: symmetrical SP3T switch, driver output V1A biases the series diode connected between switch ports J0 and J1, the driver output V1B biases the shunt diode connected between switch ports J1 and B1. Similarly , J3 ports and the shunt diode between J1 and B1 are each reverse biased. The reverse bias voltage , diodes connected between the J0 and J1 ports, between the J0 and J3 ports and the shunt diode between , Protection Description The MSW3100-310 MSW3100-310 and MSW3101-310 MSW3101-310 series of surface mount silicon PIN diode SP3T ... Aeroflex / Metelics
Original
datasheet

17 pages,
1517.08 Kb

MSW3100-310 MSW3101-310 TEXT
datasheet frame
Abstract: Reverse Voltage J0, J1, J2, B1, B2 Forward Diode Voltage Operating Temperature Storage Temperature , 1 of P1). Under this condition, the PIN diode connected between the J0 and J1 ports is reverse , across this diode is the arithmetic difference of the bias voltage applied to the J1 bias port and the DC , silicon PIN diode SP2T switches can be used for high power transmit/receive (TR) switching or active , Moisture Sensitivity Level Rating PIN Diode switches are susceptible to damage from ESD events, as are all ... Aeroflex / Metelics
Original
datasheet

12 pages,
644.6 Kb

MSW2040-204 MSW2041-204 TEXT
datasheet frame

Archived Files

Abstract Saved from Date Saved File Size Type Download
No abstract text available
/download/3860677-364714ZC/1331d.zip ()
Linear 25/01/2010 702.76 Kb ZIP 1331d.zip
CE 1 0 2E-12 2E-12 RO2 0 11 30 RS1 1 4 5.77E3 RS2 1 5 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE DE 10 14 DIODE DP 16 12 DIODE D1 9 11 DIODE D2 11 CE 1 0 2E-12 2E-12 RO2 0 11 30 RS1 1 4 5.77E3 RS2 1 5 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE CE 1 0 2E-12 2E-12 RO2 0 11 30 RS1 1 4 5.77E3 RS2 1 5 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE CE 1 0 2E-12 2E-12 RO2 0 11 30 RS1 1 4 5.77E3 RS2 1 5 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE
/datasheets/files/spicemodels/misc/modelos/spice_complete/ad1.lib
Spice Models 18/04/2010 121.01 Kb LIB ad1.lib
No abstract text available
/download/49720645-365036ZC/1815a.zip ()
Linear 01/08/2012 859.84 Kb ZIP 1815a.zip
) (component CON26 CON26 (place J1 (property (timestamp 00005D5A 00005D5A) ("Source Package" CON26 CON26 ) (component DIODE (place D10 (property (timestamp 000009A8 000009A8) ("Source Package" DIODE) (Value LS4148 LS4148) (place D9 (property (timestamp 00000A34 00000A34) ("Source Package" DIODE ) (pin 999 22 (property (pinname 22) (pintype 4) (image DIODE (property ) (pins J1-24 U1-28 U1-28) (net P7.4 (property (nettype P) (netdir 3) (pins
/datasheets/files/mitsubishi/3-diamonds-board/orcad/3d board.onl
Mitsubishi 20/03/2001 39.39 Kb ONL 3d board.onl
have two diodes D1 and D2 connected in parallel. The forward characteristics of the two diodes at T J1 D1 is higher than through D 2 so T J1 > T J2 , and because the forward voltage has a negative F2' D1 at T J1 D2 at T J2 I F1 I F2 D1 at 255C D2 at 255C V F1 = V F2 I F = I F1 - I F2 at 255C ( I F )' = I F1' - I F2' V F I F at T J1 = T J2 = 255C With T J1 > T J2 > 255C : ( D IF)' > D I F ratings of the devices : 1) T J1 lower than the maximum junction temperature 2) Current through D1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3602-v1.htm
STMicroelectronics 02/04/1999 15.25 Kb HTM 3602-v1.htm
have two diodes D1 and D2 connected in parallel. The forward characteristics of the two diodes at T J1 D1 is higher than through D 2 so T J1 > T J2 , and because the forward voltage has a negative F2' D1 at T J1 D2 at T J2 I F1 I F2 D1 at 255C D2 at 255C V F1 = V F2 I F = I F1 - I F2 at 255C ( I F )' = I F1' - I F2' V F I F at T J1 = T J2 = 255C With T J1 > T J2 > 255C : ( D IF)' > D I F ratings of the devices : 1) T J1 lower than the maximum junction temperature 2) Current through D1
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3602-v2.htm
STMicroelectronics 14/06/1999 15.21 Kb HTM 3602-v2.htm
The forward characteristics of the two diodes at T J1 = T J2 = 255C are shown in fig.1. The so T J1 > T J2 , and because the forward voltage has a negative temperature coefficient, the RECTIFIERS Fig.1 : Forward characteristics of two diodes D1 and D2 in parallel I F1' I F2' D1 at T J1 ( I F )' = I F1' - I F2' V F I F at T J1 = T J2 = 255C With T J1 > T J2 > 255C necessary to remain within the maximum ratings of the devices : 1) T J1 lower than the maximum junction
/datasheets/files/stmicroelectronics/stonline/books/ascii/docs/3602-v3.htm
STMicroelectronics 25/05/2000 17.06 Kb HTM 3602-v3.htm
No abstract text available
/download/99981081-365346ZC/907a-b.zip ()
Linear 30/04/2012 793.1 Kb ZIP 907a-b.zip
CE 1 0 1E-12 1E-12 RO2 0 12 30 RS1 1 3 5.77E3 RS2 1 4 5.77E3 CCI 15 12 40E-12 40E-12 RP 16 10 7.7E3 J1 5 11 3 FET J2 6 7 4 FET DC 13 2 DIODE DE 9 13 DIODE DP 16 10 DIODE D1 8 12 DIODE D2 12 8 DIODE IOS 14 11 25E-12 25E-12 .MODEL DIODE D() .MODEL FET PJF(VTO=-1 BETA=1E-3 IS=100E-12 100E-12) .ENDS
/datasheets/files/analog-devices/spicemodels/ad744k.cir
Analog Devices 24/03/2005 1.31 Kb CIR ad744k.cir
DC 2.6 VE 10 16 DC 3.1 RO1 11 14 25 CE 1 0 2E-12 2E-12 RO2 0 11 30 RS1 1 4 5.77E3 RS2 1 5 5.77E3 J1 6 13 4 FET J2 7 8 5 FET DC 14 2 DIODE DE 10 14 DIODE DP 16 12 DIODE D1 9 11 DIODE D2 11 9 DIODE IOS 15 13 12.5E-12 5E-12 .MODEL DIODE D() .MODEL FET PJF(VTO=-1 BETA=1E-3 IS=50E-12 50E-12) .ENDS
/datasheets/files/analog-devices/spicemodels/ad711s.cir
Analog Devices 24/03/2005 1.21 Kb CIR ad711s.cir