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J.1N4449 Datasheet

Part Manufacturer Description PDF Type
J1N4449 Thomson-CSF Condensed Data Book 1977 Scan
J-1N4449 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan
J 1N4449 Thomson-CSF Condensed Data Book 1977 Scan
J.1N4449 Thomson-CSF Condensed Data Book 1977 Scan

J.1N4449

Catalog Datasheet MFG & Type PDF Document Tags

IN914A

Abstract: 1N914B1N4449 ABSOLUTE MAXIMUM RATINGS Bâ'ž 4.0 nS 100 V (MIN) .020' DIR 0.5 DIR Temperatures Storage , 0.62 1N916B, 1N4449 0.63 1N914, 1N916, 1N4148, 1N4149 1N914A, 1N916A, 1N4446, 1N4447 1N916B, 1N4449 , , 1N4447 1N916, 1N916A, 1N916B, 1N4149, 1N4448, 1N4449 4.0 2.0 LL LL a. a. VR = 0, f = 1 MHz VR = 0, f = 1 MHz VfR Peak Forward Recovery Voltage 1N914, 1N916, 1N914B, 1N916B, 1N4448, 1N4449 2.5 V 50 mA Peak
-
OCR Scan
IN914A 1N4446R n4446 IN914A/B DO-35
Abstract: â'¢zSe.mi-Conducto'i tPioduati, fine. TELEPHONE: (973) 376-2922 (212) 227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. FAX: (973) 376-8960 1N914THRU 1N4454 SILICON EPITAXIAL PLANAR DIODES Features DO-35 Silicon Epitaxial Planar Diodes for general purpose and switching The types 1N4149, 1N4447 and 1N4449 are also available in glass case DO-34. DO-34 -A- DIME MS 10 h S , =100£J, to lR=1mA 1N4449 " 100 150 500 200 1.0 30 25 20 Max. 4.0 !F=10mA New Jersey Semiconductor
Original
1N4150 1N4152 1N4153 1N4450 1N4451 1N4453

IN4154

Abstract: in4447 COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, IN4447, 1N4448 1N4449 FEATURES â , °C 1N4149 1N4151 1N4154 1N4446 1N4447 1N4448 1N4449 Peak Reverse Voltage , . MECHANICAL SPECIFICATIONS 1N4149, 1N4151, 1N4154, 1N4446,1N4447, 1N444B 1N4449 INCHES MILLIMETERS A .065 , , 1N4154 1N4446, 1N4447, 1N4448 1N4449 ELECTRICAL SPECIFICATIONS (at 25»C unless noted) Type Peak , '" â'" â'" 20 25 20 50 4pF 4nS 1N4448 75 â'" â'" â'" â'" 1.0 20 25 20 50 4pF 4nS 1N4449 75 - - 1.0 -
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OCR Scan
IN4154 IN4448 in4151 diode 1n4446 Diode 1n4149 IN414

in4447

Abstract: IN4446 1N4447 100 25 20 1.00 20 2 4 d035 38 1N4448 100 25 20 1.00 100 4 4 d035 38 1N4449 100 25 20 1.00 30 2 , 1N4448 1N4531 1N916 1N916A 1N916B 1N4149 1N4447 1N4449 1N4S36 1N4154 Reverse Recovery Time of 2 , 1N4449 100 1 5 1 30 0.63-0.73 1.0 25 50 5 2 4 2.5 1N41I54 1N4536 35 @ 5/j.A 30 1.0 100 @ 25V 100 @ 25V
-
OCR Scan
IN4305 IN4446 IN4I48 in4449 1n914 equivalent DIODe IN4446 100/1A 1N4444 1N4532 1N4533 IN4534

IN4149

Abstract: IN4154 COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES â'¢ Metallurgical Bond â'¢ Planar Passivatori â'¢ DO-35 DESCRIPTION Tnis series otters Metallurgical Bonding and Is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25°C 1N4149 1N41S1 1N4154 1N4446 1N4447 1N4448 1N4449 Peak Reverse Voltage , '" â'" â'" 1.0 20 25 20 SO 4pF 4nS 1N4449 75 - - 1.0 - â'" 20 25 20 50 2pF 4nS MECHANICAL
-
OCR Scan
IN4149 4N* diode LN4149

1N4454A

Abstract: IS954 1N4449 Bfi 75 450 150 0. 73 5 0. 025 20 2 4 ll«B13:0. 63 â'" 0. 73V 24C 1N4449 a â'" A 100 75 450 150 2 30 0. 025 20 2 4 P=500i» 24G 1N4449 M2 100 75 450 150 2 30 5 75 0. 9 2 2 4 P
-
OCR Scan
1N4534 1S954 1S955 1N4454A IS954 IS953 1S548 1S773 1S773A 1S774 1S774A 1S775

1N4447

Abstract: . 1N916 1N4448 . . . 1N914B 1N4446 . . . 1N914A 1N4449 . . . 1N916B mechanical data Double-plug , ETER V|gi) Reverse Breakdown Voltage TEST C O N D IT IO N S U = 5 MA l, 1N4447 1N4448 1N4449 , MIN MAX MIN MAX UNIT 4 4 4 4 4 4 1N4446 1N4447 1N4448 1N4449 ns V I f = 50 mA, RL = 50 0
-
OCR Scan

1N4447

Abstract: DSAIH0002543 ELECTRICAL CHARACTERISTICS SYMBOL vF CHARACTERISTIC Forward Voltage 1N914B, 1N4448 1N916B, 1N4449 1N914, 1N916, 1N4148, 1N4149 1N914A, 1N916A, 1N4446, 1N4447 1N916B, 1N4449 1N914B, 1N4448 Reverse Current , 1N4447 1N916, 1N916A, 1N916B, 1N4149, 1N4448, 1N4449 Peak Forward Recovery Voltage 1N914, 1N916, 1N914B, 1N916B, 1N4448, 1N4449 4.0 2.0 2.5 PF pF V VfR RE Rectification Efficiency 1N914A, 1N914B
-
OCR Scan
DSAIH0002543 1N44
Abstract: 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 COMPUTER DIODE Switching FEATURES â'¢ Metallurgical Bond â'¢ Planar Passivated â'¢ DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25°C 1N4149 1N4151 1N4154 1N4446 1N4447 1N4448 1N4449 Peak Reverse V o , 4nS 1N4449 75 â'" â'" 1.0 â'" â'" 20 25 20 50 2pF 4nS @ -
OCR Scan

1N4447

Abstract: COMPUTER DIODE Switching 1N4149, 1N4151, 1N4154 1N4446, 1N4447, 1N4448 1N4449 FEATURES · Metallurgical Bond · Planar Passivated · DO-35 DESCRIPTION This series offers Metallurgical Bonding and is very popular for general purpose switching applications. ABSOLUTE MAXIMUM RATINGS, AT 25°C 1N4149 1N4151 1N4154 1N4446 1N4447 1N4448 1N4449 Peak Reverse V o lta g e . 75V , 1N4448 1N4449 Paak Inverse Voltage 75 75 35 75 75 75 75 @ 20mA - @ 30mA - 1.0 - 1.0 @
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OCR Scan

IN752 zener diode

Abstract: IN659 DO-35 1N4448 DO-35 1N4449 DO-35 FDLL914 LL-34 FDLL916 LL-34 FDLL914A LL-34 FDLL914B LL , ,1N4448 0.62 0.72 V lp = 5.0 mA 1N916B, 1N4449 0.63 0.73 V lp = 5.0 mA 1N914, 1N916 ( 1N4148, 1N4149 1 1.0 V lp = 10 mA 1N914A, 1N916AÌ 1N4446, 1N4447 J 1.0 V If = 20 mA 1N916B, 1N4449 1.0 V , > 1N4448, 1N4449 ) 4.0 2.0 PF pF Vr = 0, f = 1 MHz Vr = 0, f = 1 MHz V(r Peak Forward Recovery Voltage 1N914, 1N916 1N914B, 1N916B 1N4448, 1N4449 2.5 V 50 mA Peak Square Wave, 0.1 ¿is pulse width, 5 kHz -
-
OCR Scan
IN752 zener diode IN659 IN965 in4938 IN751 in755 00E747A 1N658/FDLL658 1N658 FDLL658 FDS01400 1N3600

1N4447-A

Abstract: 1N4448-A 1N4449 Bfi 75 450 150 0. 73 5 0. 025 20 2 4 ll«B13:0. 63 â'" 0. 73V 24C 1N4449 a â'" A 100 75 450 150 2 30 0. 025 20 2 4 P=500i» 24G 1N4449 M2 100 75 450 150 2 30 5 75 0. 9 2 2 4 P
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OCR Scan
1S953 1N4447-A 1N4448-A is805 S45TI 1N4606 1N4607 1N4608 P-500 1S776 1S776A

DIODe IN4446

Abstract: in4447 1N4447 100 25 20 1.00 20 2 4 d035 38 1N4448 100 25 20 1.00 100 4 4 d035 38 1N4449 100 25 20 1.00 30 2 , 1N4448 1N4531 1N916 1N916A 1N916B 1N4149 1N4447 1N4449 1N4S36 1N4154 Reverse Recovery Time of 2 , 1N4449 100 1 5 1 30 0.63-0.73 1.0 25 50 5 2 4 2.5 1N41I54 1N4536 35 @ 5/j.A 30 1.0 100 @ 25V 100 @ 25V
-
OCR Scan
JANTX 1N916 1n916 equivalent 1N914 general electric 1N916 JANTX in444b diode IN4448 1N4727 1N4863 DA1701 DA1703 MA1701

1N4449

Abstract: DO-204AH Certificate TH97/10561QM 1N4449 Certificate TW00/17276EM HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : · High switching speed: max. 4 ns · Reverse voltage:max. 75V · Peak reverse voltage:max. 100 V · Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass , /17276EM RATING AND CHARACTERISTIC CURVES ( 1N4449 ) FIG1. - FORWARD CURRENT VS. FIG.2 - REVERSE
EIC Semiconductor
Original

Reverse voltage diode

Abstract: 1N4449 1N4449 HIGH SPEED SWITCHING DIODE DO - 35 Glass (DO-204AH) FEATURES : · High switching speed: max. 4 ns · Reverse voltage:max. 75V · Peak reverse voltage:max. 100 V · Pb / RoHS Free 1.00 (25.4) min. 0.079(2.0 )max. 0.150 (3.8) max. Cathode Mark 1.00 (25.4) min. 0.020 (0.52)max. MECHANICAL DATA : Case: DO-35 Glass Case Weight: approx. 0.13g Dimensions in , 9, 2006 RATING AND CHARACTERISTIC CURVES ( 1N4449 ) FIG1. - FORWARD CURRENT VS. FIG.2 -
Synsemi Semiconductor
Original
Reverse voltage diode

1N4448-A

Abstract: 1N4532 1N4449 Bfi 75 450 150 0. 73 5 0. 025 20 2 4 ll«B13:0. 63 â'" 0. 73V 24C 1N4449 a â'" A 100 75 450 150 2 30 0. 025 20 2 4 P=500i» 24G 1N4449 M2 100 75 450 150 2 30 5 75 0. 9 2 2 4 P
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OCR Scan
1S801 1S802 1S803 1S804 1S805 1S806

CECC 50001

Abstract: BAV21 CECC 1N4449* 100 150 500 200 1.0 100 25 20 max. 4.0 lF=10mA,VR=6V,RL=100n,tolR=1mA 1N4450* 40 150 400 175 , CECC 50001 -023:1N4148,1N4149,1N4447,1N4448 and 1N4449. *During 1987, branding of these diodes will be
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OCR Scan
BA170 BA201 BAV17 BAV18 BAV19 BAV20 CECC 50001 BAV21 CECC WG713 1N45BA 1N483A Diode

1N4532

Abstract: 1N4536 1N4449 Bfi 75 450 150 0. 73 5 0. 025 20 2 4 ll«B13:0. 63 â'" 0. 73V 24C 1N4449 a â'" A 100 75 450 150 2 30 0. 025 20 2 4 P=500i» 24G 1N4449 M2 100 75 450 150 2 30 5 75 0. 9 2 2 4 P
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OCR Scan
1S808 p500k 1S807 1S977 32MAX 53MIN 03MAX

5011N

Abstract: IC la 4148 TY P ES IN 4148 WM9 1N4446 THRU 1N4449 SILICON SWITCHING DIODES B U L L E T IN N O . D L S 7 3 9 2 6 9 , O C T O B E R 1 9 6 6 - R E V IS E D M A R C H 197 3 · FA ST SWITCHING DIODES Rugged Double-Plug Construction Electrical Equivalents: 1N4148 . . . 1N914 . . . 1N4531 1N4149 . . . 1N916 1N4446 . . . 1N914A mechanical data 1N4447 . . . 1N916A 1N4448 . . . 1N914B 1N4449 . . . 1N916B , THRU 1N4449 SILICON SWITCHING DIODES ` switching characteristics at 25° C free-air temperature
-
OCR Scan
5011N IC la 4148 wm9 05
Abstract: DIGITRON SEMICONDUCTORS 1N4149, 1N4151-1N4154, 1N4446-1N4449 SWITCHING RECTIFIER MAXIMUM RATINGS @ 25°C Parameter Symbol 1N4149 1N4151 1N4152 1N4153 VRM 75V 75V 40V 75V Peak reverse voltage Average rectified current 1N4154 Forward surge current, 8.3ms 1N4447 1N4448 1N4449 35V IO 1N4446 75V 75V 75V 75V 200mA IFSM -65° , 1N4449 75 - - 1.0 - - 20 25 20 50 2 4 MECHANICAL CHARACTERISTICS DIGITRON
Original
MIL-PRF-19500
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