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Part Manufacturer Description Datasheet BUY
2N918 Central Semiconductor Corp RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Silicon, NPN, TO-72 visit Digikey Buy
2N918UB Microsemi Corporation Small Signal Bipolar Transistor, 0.05A I(C), 15V V(BR)CEO, 1-Element, NPN, Silicon visit Digikey Buy
2N918 LEAD FREE Central Semiconductor Corp TRANS RF NPN 15V 50MA TO-72 visit Digikey Buy
JAN2N918 Microsemi Corporation RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, TO-72, TO-72, 4 PIN visit Digikey Buy
JANTXV2N918UB Microsemi Corporation RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3 visit Digikey Buy
JAN2N918UB Microsemi Corporation RF Small Signal Bipolar Transistor, 0.05A I(C), 1-Element, Ultra High Frequency Band, Silicon, NPN, CERAMIC PACKAGE-3 visit Digikey Buy

J 2N918 Datasheet

Part Manufacturer Description PDF Type
J 2N918 Thomson-CSF Condensed Data Book 1977 Scan
J.2N918 Thomson-CSF Condensed Data Book 1977 Scan
J2N918 Thomson-CSF Condensed Data Book 1977 Scan
J-2N918 Thomson-CSF Shortform Semiconductor Catalogue 1982 Scan

J 2N918

Catalog Datasheet MFG & Type PDF Document Tags

npn transistors,pnp transistors

Abstract: J.BC211 ACTIVE COMPONENTS FOR HYBRID CIRCUITS COMPOSANTS ACTIFS POUR CIRCUITS HYBRIDES S Silicon NPN transistors VHF-UHF amplification and oscillation (chip) Transistors NPN silicium, amplification et oscillation VHF-UHF 1pastille) Typs Type fT (MHz) typ VCEO (V) 'c (mA) h21E j min - max VCE (V) 'c (mA) J.2N918 600* 15 50 20 1 3 J.2N 3570 1500* 15 50 20- 150 6 5 J.2N 3571 1200* 15 50 20 200 6 5 J.2N 3572 1000* 13 50 20- 300 6 5 J.BF 167 400 30 25 25 10 4 J.BF 173 600
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BC211 npn transistors,pnp transistors J.BC211 transistor amplifier VHF/UHF

J2N4393

Abstract: J2N4416 0,4 Commutation J-2N918 0,2 15 20 1 0,4 x 0,4 rapide n channel field effect transistors , ) h21E «C ImAI Dimensions (mm) Application NPN PNP min. max. J-2N 2221 0,5 30 40 120 150 0,45 x 0,45 J-2N 2906 0,4 40 40 120 150 0,45 x 0,45 J-2N 2221 A 0,5 40 40 120 150 0,45 x 0,45 J-2N 2906 A 0,4 60 40 120 150 0,45 x 0,45 J-2N 2222 0,5 30 100 300 150 0,45 x 0,45 J-2N 2907 0,4 40 100 300 150 0,45 x 0,45 J-2N 2222 A 0,5 40 100 300 150 0,45 x 0,45 General purpose J-2N 2907 A 0
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J-BSW21 J-2N4416 J-2N4091 J-2N4093 J2N4393 J2N4416 IC 4093 J-2N4393 J2N4392

2N918

Abstract: 2N918 thermal resistance 1/6 2N918 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS DESCRIPTION The 2N918 is a silicon planar , s t g, T j January 1989 Collector Current 50 mA Total Power Dissipation at T amb 25 °C , test circuit. 2/6 T amb = 150 °C 25 % 2N918 DC Current Gain. Transition Frequency , Transadmittance vs. Collector Current. Output Admittance vs. Collector Current. 3/6 2N918 Input
STMicroelectronics
Original
2N918 thermal resistance 2N918 oscillator

2N918

Abstract: 1B73 SGS-THOMSON R!tlD(EæilLI(g'iri©iD(SS 2N918 HIGH-FREQUENCY OSCILLATORS AND AMPLIFIERS D E S C R IP T IO N The 2N918 is a silicon planar epitaxial NPN transis tors in Jedec TO-72 metal case. It is , 1 /6 2N918 TH E R M A L DATA Rth j-case ^th j-amb Therm al Resistance Junction-case Therm al , st circuit. 2/6 ^ 7# 7 SGS-THOMSON RiiieR®iiLii£iîR®(iaies 2N918 DC Current Gain. G , . Collector Current. 0 2 4 6 8 l c (m*J 0 ! 4 8 B Ic
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1B73

2N918

Abstract: 2N3600 File No. 83 RF Power Transistors Solid State 2N918 Division 2 N3600 RCA-2N918 and RCA , feedback capacitance, shielding of the device, or both. MAXIMUM RATINGS, Absolute-Maximum Values: 2N918 , ( a- i j , characteristic for types 2N918 and 2N3600. 20 10-66 File No. 83 ELECTRICAL CHARACTERISTICS 2N918, 2N3600 I , DC Collector Current DC Base Current Type 2N918 Type 2N3GOO Units TA f IE ic 'B
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RCA-2N918 RCA-2N3600 874-LA i2757 RCA Transistor VHF transistor amplifier circuit 92CS-I2757R2 92CS-I2 759R2 92CS-I2760R2

3570 1301

Abstract: MRF245 « 922b* (pF) ? VCB (V) Gp GUM* «dB) §> ic / f (mA) (MHz) IMF @ Ic (dB) (mA) / f (MHz) 2N918 N TO , dm1 oop sd 1536 mrf245 sd1416 pt4571 sdì 006 2n917 2n918 2n6200 2 n5643 bly33 sd 1065 dm150pa sd1538 mrf313 sd 1020-6 pt4571a sd 1006 2n917a 2n918 2n6201 sd1019-5 bly34 2n6255 dm150pb sd 1538 mrf313a sd 1020-5 pt4572a sd 1005 2n2616 2n918 2n6204 2n5637 bly35 2n5642 dm250p sd1540 mrf314 sd1015 pt4627 2 n5641 2n2708 2n918 2n6368 sd1285 bly36 2n3927 d1-12b sd1409 mrf317 sd1480 pt5604 2 n3553 2 n2934 2n918
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3570 1301 MRF245 ad 40282 PT8828 2N4932 BLX66 BFT50 BFQ22 CB-233 BFP92 BFQ63

2N918 pin configuration

Abstract: Transistor 2N918 PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN TRANSISTORS, BEST SUITED FOR LOW NOISE VHF , 2N918 TO-72 Metal Can Package DYNAMIC CHARACTERISTICS Cob VCB=10V, IE=0, f=140kHz 1.7 pF , Data Sheet Page 2 of 4 2N918 TO-72 Metal Can Package TO-72 Metal Can Package A B K E 1 L 3 H G 2 4 J All dimensions in mm. F PIN CONFIGURATION 1. EMITTER 2 , 2.28 2.97 H 0.91 1.17 J 0.71 1.22 K 12.70 - L 12 DEG 48 DEG
Continental Device India
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2N918 pin configuration Transistor 2N918 2n918 continental devices india limited 2N918 CONTINENTAL DEVICE INDIA LIMITED 48-DEG ISO/TS16949 C-120 2N918R
Abstract: Certified Manufacturer NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package NPN , NPN SILICON PLANAR RF TRANSISTOR 2N918 TO-72 Metal Can Package DYNAMIC CHARACTERISTICS Cob , Continental Device India Limited n Data Sheet Page 2 of 4 2N918 TO-72 Metal Can Package TO-72 Metal Can Package A B K E 1 L 3 H G 2 4 J All dimensions in mm. F , '" 0.76 F 1.14 1.39 G 2.28 2.97 H 0.91 1.17 J 0.71 1.22 K 12.70 Continental Device India
Original

SE-5023

Abstract: TO-72 -5 TO-72 TO-72 TO-72 2N917 2N918 * J A N T X also available Preferred devices in b o ld ty p e . , 175 175 600 200 200 200 PACKAGE SE8010 SE5023 SE5024 SE5055 2N707 SE5050 SE5051 2N917 2N918 SE5052 SE5022 SE5020 SE5021 2N3137 2N918 JAN* 10.8 @ 27 22.5 @ 45 22.5 @ 45 27.0 @ 45 6.0 @100 20.0
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SE-5023 TO-72 2n918jan 2N918 JAN

2N918

Abstract: 2N917 current Courant résiduel collecteur-base VCB = 15V 'E = ° 'CBO 2N 917 2N918 1 10 nA VCB =15 v lE =0 , = 10 m A lg = 1 mA 2N918 0,4 Base-emitter saturation voltage Tension de saturation basé-émetteur lc = 3 mA lB = 0,15 mA VBEsat 2IM917 0,87 V lc = 10 mA lg = 1 mA 2N918 1 DYNAMIC , (neutralized) j) Gain en puissance (neutrodyné) vCE = iov lç =5 mA f = 200 MHz GP 2N917 9 dB VCE = 12 V lc = 6 mA f = 200 MHz Rg = Rl = 50 n 2N918 15 Collector efficiency Efficacité collecteur VCE =15v
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schema GP 300

MC306G

Abstract: 2N918 motorola -R1 c/> â'"m ua cr> o CO 3J o r-t *f co . £ CJ1 -H Ç2 so CD .020 J_ r .300 .335 MAX DIA .160 MAX , Cycle - 5% 0.8V MC305G 2N918 2N918 OUTPUT MOTOROLA Semiconductor Products Inc. BOX 955 â'¢ PHOENIX 1
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MC306G MC307G 2N918 motorola ScansUX1007 9003-R1

C495 transistor

Abstract: BF194 C463 2N2412 T018 PNP 25 20 5 40 120 10 150 J and Fast Switch BS9300 C478 2N918 T012 NPN 30 15 3 30 â , 10 10 2.5 4.0 100 100 1.3 70 2N918 'plastic' equivalent NPN BF357K (2) 30 15 50 , 5 20 300 450 6 1000 â'" â'" 2N918 NPN T072 30 15 3 50 3 20 60 6 600 10 0.4 Oscillator power , -¿T" rf if) co" 2-54 minâ'"I» -«|l< 12-7 min 0-23 Dimensions in mm TO-39 2-54 . Collector »-5-35-*H2-7 mil Emitter 12*7 min»] 0-48^J 0 8 max Dimensions in mm TO-72 >- Maximum
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BF594 BF194 BF595 BF195 BF597 BF197 C495 transistor 2N4996 BF194 equivalent

2N3866

Abstract: zetex ztx327 35 20 700 2 8.5 2 200 1.5 30 200 2 200 15 TO-72 2N918 30 15 600 4 6.0 1 60 1.7 20 - 3 200 15 TO , m j->> P039 300 300 500 0.45 50 4 25 150 20 20 300 800 TO-39 PO 38 ZT91 120 100 1000 1.2 200 , 4.5 2 500 0.85 20 125 25 350 - SOT-23 2N918 30 15 600 4 6.0 1 60 1.7 20 - 3 200 15 TO-72 FMMT918 30
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2N3866 2N4427 2N2708 BFY90 BSY55 2N2102 zetex ztx327 Zetex bfy90 low noise transistors rf

2N 2857

Abstract: 2N3600 JEDEC TRANSISTORS RF-IF amplifiers/oscillators TYPE > cc < :> 0 UJ M I 5 c Ll- a. X CO -jâ'" o o m CM ai CD < o o a. :> a UJ I-< cc E I- E n u u c E C3 a_ S X CO E U- z S @ s j= û CL < 2N 707 NPN 25 _ 5 6 100 â'" _ 300 TO-18 2N918 NPN 15 600 1.7 15 200 6 60 200 TO-72 2N 2857 NPN 15 1000 1 12.5 450 4.5 450 200 TO-72 2N 3600 NPN 15 850 1 17 200 4.5 200 200 TO-72 2N 3839 NPN 15 1000 1 12.5 450 3.9 450 200 TO-72 2N 4034 PNP 40 400 3.5 15 typ 100 6 100 360 TO-18 2N
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2N 2857 RF-IF

C495 transistor

Abstract: c735 C463 2N2412 T018 PNP 25 20 5 40 120 10 150 J and Fast Switch BS9300 C478 2N918 T012 NPN 30 15 3 30 â , 5 20 300 450 6 1000 â'" â'" 2N918 NPN T072 30 15 3 50 3 20 60 6 600 10 0.4 Oscillator power , -¿T" rf if) co" 2-54 minâ'"I» -«|l< 12-7 min 0-23 Dimensions in mm TO-39 2-54 . Collector »-5-35-*H2-7 mil Emitter 12*7 min»] 0-48^J 0 8 max Dimensions in mm TO-72 >- Maximum , J Available in 3 hFE Bands at lc=150mA 2N1131 PNP T039 50 35 5 600 150 20 45 5 15 â'" â'" 0.15 1.5
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2N3570 c735 c644 2N1893 equivalent C735 O 2N2222 hfe C749 4-95J0 2N3571 2N3572 2N4252 2N4253

2N918 JANTX

Abstract: 2n918 die , LOW-POWER TYPE 2N918 AND 2N918UB JAN, JANTX, JANTXV AND JANS, JANHC and JANKC This specification is , 15 15 3.0 3.0 50 50 -65 to +200 2N918 2N918UB 1/ Derate linearly, 1.14 mW/°C above , . Physical dimensions for 2N918, (T0-72). 3 MIL-PRF-19500/301F UB Symbo l A A1 B1 B2 B3 D , conditions. Power burn-in conditions are as follows: 2N918, UB.VCB = 5 - 15 V dc, PT , information Manufacturer PIN 34156 2N918 2N918 JANHCA2N918 JANKCA2N918 * 6.5 Changes from previous
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2N918 JANTX 2n918 die L-41000 HP343A 2n918 set 2N918 JANS MIL-PRF-19500/301E MIL-PRF-19500

2N904

Abstract: 2N929 texas SO SO SO SO 400m 300m 500m 400m 3.2m 3.0m 3.0m 150 J 125 J 175S 310m 310m 310m 200m 200m , 1.7m 1.7m 1.7m 1.7m 1.7m 1.7m 135 J 135 J 135 J SIP TO·92var TO·18 TO·92 TO·23Svar TO , ~ ~~g j 150 J 150 J 150 J 175 S 175S 175S 175 S 175 S 175 A 175 S 175 J 175 A 175 A 135 J 175S 175S 175 J tg:~~g TO·236 TO·236 TO·92 TO·5 TO·5 TO·18 TO·18 TO·18 TO·5 TO·5 TO·18 TO·18 TO·226M TO·5 TO , H~j 1755 1755 1755 1755 150 J 150 J 150 J 175 J 175 J 175 J 175 J 175 J 175 A 175 J 175 J 175 S
Short Form Catalog
Original
2N1003 2N1005 2N1006 2N1007 2N904 2N929 texas 2N906 2N905 Emihus 2N845 2N997 2SC982TM MMBT100 MMBT200 MMBT3642 MPSS545
Abstract: TYPE 2N918 N-P-N SILICON TRANSISTOR B U L L E T IN N O . D L-S 7 3 1 1 9 8 9 , M A R C H 1 9 7 3 FOR VHF AND UHF AMPLIFIER AND OSCILLATOR APPLICATIONS · · · 'mechanical data Low Noise Figure . . . 6 , e s . t w = 3 0 0 Ms, d u t y c y c le < 2% . · J E D E C re g iste re d d a ta . T h is d a ta sh e , A LLA S . TE X A S 75222 TYPE 2N918 N-P-N SILICON TRANSISTOR "operating characteristics at 25 , * J E D E C re g iste re d d a ta * T h e f o u r t h lead (case) is f lo a tin g f o r a ll m e a su -
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200-M

2N3571

Abstract: 2N4253 2N3571 NPN T072 25 15 3 50 5 20 200 450 4 1200 â'" â'" ZIXJO/^ HriN 1 \J ! ¿. 1 o i) 5 ¿.U JVV â'" 2N918 NPN T072 30 15 3 50 3 20 60 6 600 10 0.4 Oscillator power output 50mW at 500 MHz
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BFT32 BFT33 BFT34 BFT35 BFT36 BFT37 2N3571 NPN

2N907 PNP

Abstract: Emihus ~~~~~~ s.o 15 20 25 30 2N1428 2N1429 2N864A 2N864A 2N864A 2N4006 2N2177 2N2178 2N2175 ~~~J , J 150 J 175 J 175 J TO·5 TO·5 TO·5 TO·5 TO·5 TO·5 TO·5 TO·5 TO·5 TO·5 ~~g~ 500m 500m 375m , 250m 250m 250m 250m 2S0m g~j 175S 175S 150 S 150 J 150 S 150 S 150 S 150 S +g:~g TO·46 TO·46 TO·5 MicroTO·92 TO·18 TO·18 TO·18 TO·18 ~~g j 150 J 175 S 175S 175 S 175S 175 J 175 J 175 J :g:~ TO·5 TO·18 TO·18 TO·18 TO·46 TO·5 TO·18 TO·5 ~~g j 150 J 150 J 175S 175S 175 S 175 S 175 S 175 S 17SS
Short Form Catalog
Original
2N2424 2N907 PNP 2N2425 MPS9680 2N907 2N828 2N2165 2N2166 2N2162 2N2163 2N2167 2N2164
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