NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| J 2N2369 | Thomson-CSF | Condensed Data Book 1977 |
1 pages, |
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| J.2N2369 | Thomson-CSF | Condensed Data Book 1977 |
1 pages, |
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| J2N2369 | Thomson-CSF | Condensed Data Book 1977 |
1 pages, |
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| J-2N2369 | Thomson-CSF | Shortform Semiconductor Catalogue 1982 |
1 pages, |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: xxxx-J/A xxxx-JANTXV Ordering Information: Part Number Description Marking (*) 2N2369-JQR QR205 QR205 groups A,B,C 2N2369-J 2N2369-JQR-B QR205 QR205 groups A,B,C 2N2369-J/B 2N2369-JQR-A QR205 QR205 groups A,B,C screening to QR204 QR204 level B 2N2369-J/A screening to QR204 QR204 level A * Where ... | Original |
24 pages, |
U3158 ACC 2036 BS9365 EB 1038 diode J 2N2369 2N2880 stanag LISTING QR208 smd diode A4 smd code marking a4a MIL-STD-9858A SMD a3a A4A smd a3a smd QR208 abstract |
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| Abstract: Å'\ME£w 2N2369 2N2369A 2N2369A* "also available as JAN, JANTX, JANTXV SILICON SMALL-SIGNAL NPN , RATINGS RATINGS SYMBOL 2N2369 1 2N2369A 2N2369A UNITS Collector-Emitter Voltage ^CEO 15 Vdc Collector-Base , /W°C Operating & Storage Junction Temperature Range 'j, rstg -65 to+200 UC (1) Pulse Test: Pulse , 0.100 TYP II 0.91 1.17 0.036 0.046 J 0.72 1.22 0.026 0.048 K 12.70 - 0.500 M 45° TYP 45" TYP N , / (978)794-1666 / FAX: (978)689-0803 T4-4.8-860-306 REV: - (TlMESr 2N2369 2N2369A 2N2369A* ^ also available ... | OCR Scan |
2 pages, |
2N2369 transistor 2N2369A 2n2369 2N2369 2N2369 abstract |
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| Abstract: D | bBb?2SM QQfibaMT 2 | 2N2368 2N2368, 2N2369, A, 2N3227 2N3227 -J*- -jg ELECTRICAL CHARACTERISTICS (continued , | 2N2368 2N2368, 2N2369, A, 2N3227 2N3227 135" "J^ * SWITCHING TIME EQUIVALENT TEST CIRCUITS FOR 2N2369, 2N3227 2N3227 -1.5 V , , 2N2369, A 2N3227 2N3227 2N2369A 2N2369A JAN, JTX JTXV AVAILABLE CASE 22-03, STYLE 1 TO-18 (TO-2Q6AA) 1 Emitter 2 "1 , Emitter-Base Breakdown Voltage (IE = 10 jiAdc, Ic = 0) 2N2368 2N2368, 2N2369, 2N2369A 2N2369A 2N3227 2N3227 v(BR)EBO 4.5 6.0 - Vdc , (Vcb = 20 Vdc, iE = 0) 2N2368 2N2368, 2N2369 2N3227 2N3227 ICBO - 0.4 0.2 pAdc (Vcb = 20 Vdc, ig = 0, Ta = 150°C ... | OCR Scan |
5 pages, |
72SM 2N3227 J 2N2369 2N2369A 2N3227 MOTOROLA 2N2368 MA 4108 2N2369 2N2369A MOTOROLA 2N2368 abstract |
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| Abstract: TRANSISTORS 2N2369 2N2369A 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 , ton Turn off Time toff Storage Time ts 2N2369 >20 2N2369/2369A 2N2369A 2N2369A UNIT , All diminsions in mm. E C B G K 2 F 1 3 H DIM A B C D E F G H J , 0.91 1.17 0.71 1.21 12.70 - 45 DE G L J D 3 2 1 PIN CONFIGURATION 1. EMITTER ... | Original |
2 pages, |
J 2N2369 2N2369A 2N2369 transistor 2N2369 2N2369 abstract |
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| Abstract: TRANSISTORS 2N2369 2N2369A 2N2369A TO-18 Boca Semiconductor Corp. BSC APPLICATIONS 2N2369/A are NPN , Specified) DESCRIPTION SYMBOL TEST CONDITION 2N2369 2N2369A 2N2369A UNIT >15 >15 V VCEO*(sus)IC=10mA, IB=0 , ton Turn off Time toff Storage Time ts 2N2369 >20 2N2369/2369A 2N2369A 2N2369A UNIT , 2 F 1 3 H All diminsions in mm. E C B DIM A B C D E F G H J K L , 0.71 1.21 12.70 - 45 DE G L J D 3 2 1 PIN CONFIGURATION 1. EMITTER 2. BASE 3. ... | Original |
2 pages, |
2N2369A 2N2369 2N2369 abstract |
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| Abstract: 1/4 2N2369 THERMAL DATA R t h j- cas e R t h j-amb Thermal Resistance Junction-case , 2N2369 HIGH-FREQUENCY SATURATED SWITCH DESCRIPTION The 2N2369 is a silicon planar epitaxial NPN , at T c as e 100 °C 0.36 1.2 0.68 W W W  65 to 200 °C T s t g, T j Storage and , : pulse duration = 300 us, duty cycle = 1 %. 2/4 0.2 2N2369 TO-18 MECHANICAL DATA mm inch , 2N2369 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON ... | Original |
4 pages, |
transistor 2n2369 J 2N2369 2N2369 datasheet 2N2369 2N2369 abstract |
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| Abstract: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors COLLECTOR 3 LAST SHIP 21/03/00 2N2369 2N2369A 2N2369A* NPN Silicon *Motorola Preferred , Collector Cutoff Current (VCB = 20 Vdc, IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A 2N2369A , Transistors, FETs and Diodes Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A 2N2369A ELECTRICAL , 2N2369 2N2369A 2N2369A 40 - 120 120 (IC = 10 mAdc, VCE = 1.0 Vdc, TA = Â55°C) 2N2369 20 - ... | Original |
6 pages, |
input impedance of 2N2369 2N3227 1N916 J 2N2369 2N2369A 2N2369A MOTOROLA 2N2369 2N2369/D 2N2369/D abstract |
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| Abstract: MOTOROLA Order this document by 2N2369/D SEMICONDUCTOR TECHNICAL DATA Switching Transistors 2N2369 2N2369A 2N2369A* NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE 1 , , IE = 0) (VCB = 20 Vdc, IE = 0, TA = 150°C) 2N2369 2N2369A 2N2369A Collector Cutoff Current (VCE = 20 , Device Data © Motorola, Inc. 1996 1 2N2369 2N2369A 2N2369A ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit 2N2369 2N2369A 2N2369A 40 - ... | Original |
6 pages, |
motorola 2n2369 2N2369A 1N916 2N3227 input impedance of 2N2369 data sheet J 2N2369 2N2369 datasheet 2N2369A MOTOROLA 2N2369 motorola 2N2369 2N2369/D 2N2369/D abstract |
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| Abstract: 2N2369 2N3227 2N3227 NPN SILICON TRANSISTORS LOW CURRENT @ EPITAXIAL " @ , ~ $ +.002 Â.001 ., mr, n .017 OIA MAX T .500 MIN J k(Pe&) 500 mA , ) lCBO 2N2369 2N3227 2N3227 (VCB = 20 Vdc, TA = 150°C) Min Base Cutoff Current (vcE = 20 Vdc, vOB = 3 Vdc) 2N3227 2N3227 CoHector-Base Bretidom (1c = 10v Adc, IB = o) BVEBO i BVCEO* 2N2369 , :2$B=1;:Lc) (Ic = 10 mAdc, VCE = 1.0 Vdc) 2N2369 2N3227 2N3227 12 2N2369 2N3221 2N3221 (Ic = 10 mAdc ... | Original |
6 pages, |
2N3221 2N2369 2N3227 2N2369 abstract |
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| Abstract: 2N2369, 2369A High Speed Switching Transistors Features: · NPN Silicon Planar Epitaxial , 2N2369/A are NPN Silicon High Speed Saturated Switching, Transistors With Low Power and High Speed , - 2.97 H 0.91 1.17 J 0.71 1.21 K 12.70 - L 45° Dimensions : Millimetres Pin Configuration 1. Emitter 2. Base 3. Collector Page 1 31/05/05 V1.0 2N2369 , Collector Emitter Saturation Voltage Base Emitter Saturation Voltage DC Current Gain 2N2369 ... | Original |
4 pages, |
J 2N2369 2N2369A 2N2369 transistor 2369A 2N2369 datasheet 2N2369 2N2369/A 2N2369 abstract |
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| HIGH FREQUENCY SATURATED SWITCH 2N2369 Document Format Size 2369 January 1989 HIGH-FREQUENCY SATURATED SWITCH The 2N2369 is a silicon planar epitaxial NPN Junction-ambient Max Max 146 486 5 C/W 5 C/W 2N2369 2/4 DIM. mm inch MIN. TYP. MAX MECHANICAL DATA 0016043 2N2369 3/4 Information furnished is believed to be accurate and reliable - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A 2N2369 4/4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3247-v3.htm |
STMicroelectronics | 25/05/2000 | 6.14 Kb | HTM | 3247-v3.htm |
| ST | HIGH FREQUENCY SATURATED SWITCH 2N2369 HIGH FREQUENCY SATURATED SWITCH 2369 January 1989 HIGH-FREQUENCY SATURATED SWITCH The 2N2369 is a silicon planar epitaxial NPN tran /W 2N2369 2/4 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0 DATA 0016043 2N2369 3/4 Information furnished is believed to be accurate and reliable. However, SGS - U.S.A 2N2369 4/4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3247-v1.htm |
STMicroelectronics | 02/04/1999 | 4.36 Kb | HTM | 3247-v1.htm |
| HIGH FREQUENCY SATURATED SWITCH 2N2369 Document Format Size Document 30/01/1995 4 Raw Text Format 2N2369 January 1989 HIGH-FREQUENCY SATURATED SWITCH The 2N2369 is a silicon planar epitaxial NPN tran- sistor in Jedec TO-18 metal case. It Resistance Junction-case Thermal Resistance Junction-ambient Max Max 146 486 5 C/W 5 C/W 2N2369 2 -18 MECHANICAL DATA 0016043 2N2369 3/4 Information furnished is believed to be accurate and www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3247.htm |
STMicroelectronics | 20/10/2000 | 6.46 Kb | HTM | 3247.htm |
| ST | HIGH FREQUENCY SATURATED SWITCH 2N2369 HIGH FREQUENCY SATURATED SWITCH 2369 January 1989 HIGH-FREQUENCY SATURATED SWITCH The 2N2369 is a silicon planar epitaxial NPN tran /W 2N2369 2/4 DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0 DATA 0016043 2N2369 3/4 Information furnished is believed to be accurate and reliable. However, SGS - U.S.A 2N2369 4/4 www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3247-v2.htm |
STMicroelectronics | 14/06/1999 | 4.32 Kb | HTM | 3247-v2.htm |
| ST | HIGH SPEED SATURATED SWITCH 2N2369A HIGH SPEED SATURATED SWITCH Document available in the following formats: Portable Document Format and Raw Text Format 2N2369A November 1988 HIGH-SPEED SATURATED SWITCH The 2N2369A is a silicon planar epitaxial NPN tran- sistor in -case Thermal Resistance Junction-ambient Max Max 146 486 5 C/W 5 C/W 2N2369A 2/6 DC Current Gain. Collector . Switching Characteristics. Switching Characteristics. 2N2369A 3/6 Test Circuit for t s Test Circuit for t www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3248-v2.htm |
STMicroelectronics | 14/06/1999 | 4.94 Kb | HTM | 3248-v2.htm |
| HIGH SPEED SATURATED SWITCH 2N2369A Document Format Size Document 30/01/1995 6 Raw Text Format 2N2369A November 1988 HIGH-SPEED SATURATED SWITCH The 2N2369A is a silicon planar epitaxial NPN tran- sistor in Jedec TO-18 metal case. It -ambient Max Max 146 486 5 C/W 5 C/W 2N2369A 2/6 DC Current Gain. Collector-emitter Saturation Voltage Characteristics. Switching Characteristics. 2N2369A 3/6 Test Circuit for t s Test Circuit for t on , t www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3248.htm |
STMicroelectronics | 20/10/2000 | 7.19 Kb | HTM | 3248.htm |
| ST | HIGH SPEED SATURATED SWITCH 2N2369A HIGH SPEED SATURATED SWITCH Document available in the following formats: Portable Document Format and Raw Text Format 2N2369A November 1988 HIGH-SPEED SATURATED SWITCH The 2N2369A is a silicon planar epitaxial NPN tran- sistor in -case Thermal Resistance Junction-ambient Max Max 146 486 5 C/W 5 C/W 2N2369A 2/6 DC Current Gain. Collector . Switching Characteristics. Switching Characteristics. 2N2369A 3/6 Test Circuit for t s Test Circuit for t www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3248-v1.htm |
STMicroelectronics | 02/04/1999 | 4.98 Kb | HTM | 3248-v1.htm |
| HIGH SPEED SATURATED SWITCH 2N2369A Document Format Size 2369A November 1988 HIGH-SPEED SATURATED SWITCH The 2N2369A is a silicon planar epitaxial NPN C/W 2N2369A 2/6 DC Current Gain. Collector-emitter Saturation Voltage. Contours of Constant Characteristics. 2N2369A 3/6 Test Circuit for t s Test Circuit for t on , t off 2N2369A 4 E B H C TO-18 MECHANICAL DATA 0016043 2N2369A 5/6 Information furnished is believed www.datasheetarchive.com/files/stmicroelectronics/stonline/books/ascii/docs/3248-v3.htm |
STMicroelectronics | 25/05/2000 | 6.75 Kb | HTM | 3248-v3.htm |
| BSW67A BSW67A BSW67A BSW67A BSW66A BSW66A BSW66A BSW66A npn .alias Q2N2369 BSX20 BSX20 BSX20 BSX20 npn .alias MPS3639 MPS3639 MPS3639 MPS3639 MPS3640 MPS3640 MPS3640 MPS3640 pnp .alias MPSA05 MPSA05 MPSA05 MPSA05 MPSA06 MPSA06 MPSA06 MPSA06 npn 2905 Q2N2907 Q2N2907 Q2N2907 Q2N2907 pnp .alias Q2N2906 Q2N2906 Q2N2906 Q2N2906 Q2N2904 Q2N2904 Q2N2904 Q2N2904 pnp .alias BSW68A BSW68A BSW68A BSW68A BSW66A BSW66A BSW66A BSW66A npn .alias Q2N2369A BSX20 BSX20 BSX20 BSX20 npn BCX71j BC556B BC556B BC556B BC556B pnp .alias ZTX453 ZTX453 ZTX453 ZTX453 BC337 BC337 BC337 BC337 npn .alias Q2N4032 Q2N4032 Q2N4032 Q2N4032 BC327 BC327 BC327 BC327 pnp .alias MMBTA43 MMBTA43 MMBTA43 MMBTA43 BF257 BF257 BF257 BF257 npn .alias .alias BC184LB BC184LB BC184LB BC184LB BC546B BC546B BC546B BC546B npn .alias BCX70J BC546B BC546B BC546B BC546B npn .alias BCW81 BCW81 BCW81 BCW81 BC547C BC547C BC547C BC547C npn .alias BC860A BC860A BC860A BC860A BC556A BC556A BC556A BC556A pnp www.datasheetarchive.com/files/spicemodels/misc/spice_model_cd/vendor list/simetrix/bipolar.lb |
Spice Models | 29/07/2012 | 31.39 Kb | LB | bipolar.lb |
| :Mcebjt.lib *Si 360mW 15V 500mA 600MHz Switching pkg:TO-18 3,2,1 .PARAM Q2N2369A File:Mcebjt.lib *Si 360mW 60V :TO-18 3,2,1 .PARAM Q2N2369 File:Mcebjt.lib *Si 500mW 65V 1A 150MHz GenPurp pkg:TO-18 3,2,1 .PARAM Q Purp pkg:SOT-23 1,3,2 .PARAM QBCX70J File:Zetex.lib *ZTX Si 350mW 15V 100mA 600MHz VHF/RF pkg:SOT-23 1 www.datasheetarchive.com/files/spicemodels/misc/modelos/npn.mod |
Spice Models | 21/02/2008 | 40.8 Kb | MOD | npn.mod |