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ISOLOWNOISESPLITRAILGEN-REF Texas Instruments 5V Isolated, Low Noise Split Rail Generator (0.25A, 2.5W total) visit Texas Instruments
LOWNOISESPLITRAILNONISO-BOOST-REF Texas Instruments Low Noise Split Rail Non-Isolated Boost + - 12V Power Supply visit Texas Instruments
TPS76427DBVR Texas Instruments Low-Noise, Low Iq, 150-mA Low-Dropout Linear Regulator 5-SOT-23 visit Texas Instruments Buy
TPS76430DBVRG4 Texas Instruments Low-Noise, Low Iq, 150-mA Low-Dropout Linear Regulator 5-SOT-23 visit Texas Instruments
TPS76427DBVRG4 Texas Instruments Low-Noise, Low Iq, 150-mA Low-Dropout Linear Regulator 5-SOT-23 visit Texas Instruments
TPS76430DBVT Texas Instruments Low-Noise, Low Iq, 150-mA Low-Dropout Linear Regulator 5-SOT-23 visit Texas Instruments Buy

InP HBT transistor low noise

Catalog Datasheet MFG & Type PDF Document Tags

SFT-9100

Abstract: InP transistor HEMT MESFET Low Noise InP HBT Technology 1600 Diff. Transimpedance Supports 43Gb/s Data Rates 50GHz , Instrumentation Si BiCMOS SiGe HBT GaAs pHEMT Si CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS , transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE, and 100GbE amplitude, phase, and polarization modulation applications. The SFT-9200B uses high performance Indium Phosphide (InP) device , under high photocurrent conditions and allows high transimpedance with low DC power to be realized. The
RF Micro Devices
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50GHZ OC-768 SFT-9200B-DSB SFT-9100 InP transistor HEMT sft 43 Sft9100 InP HEMT transistor at 50ghz 9200B E/40G SFT-9200B-D SFT-9200B-DSR
Abstract: precision temperature sensor to power a heterojunction bipolar transistor (HBT) PA in W-CDMA and N-CDMA , W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs PIN NAME FUNCTION 14 INP 15 , 19-2659; Rev 0; 10/02 KIT ATION EVALU ILABLE AVA W-CDMA/N-CDMA Cellular Phone HBT PA , light loads. The converter utilizes a low on-resistance internal MOSFET switch and synchronous , provide bias to the HBT PA to maximize efficiency. The amplifier features active discharge in shutdown Maxim Integrated Products
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MAX1958/MAX1959 MAX1958 MAX1959 5M-1994 SPP-012 MO220

LQH1C4R7M04

Abstract: MAX1958 temperature sensor to power a heterojunction bipolar transistor (HBT) PA in W-CDMA and N-CDMA cell phones , W-CDMA/N-CDMA Cellular Phone HBT PA Management ICs PIN NAME FUNCTION 14 INP , 19-2659; Rev 0; 10/02 KIT ATION EVALU ILABLE AVA W-CDMA/N-CDMA Cellular Phone HBT PA , loads. The converter utilizes a low on-resistance internal MOSFET switch and synchronous rectifier to , HBT PA to maximize efficiency. The amplifier features active discharge in shutdown for full PA bias
Maxim Integrated Products
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LQH1C4R7M04 MAX1958ETP MAX1959ETP Nippon capacitors
Abstract: GaN HEMT -20 12.5 -25 -35 5 InP HBT Receiver IF Applications Cellular, PCS, GSM , 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance Applications   GaAs HBT , SBF-5089(Z) SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER RoHS Compliant and Pb-Free Product (Z Part Number , /GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed with InGaP RF Micro Devices
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500MH 240MH EDS-103413 SBF5089 SBF5089Z SBF-5089Z

BF5Z

Abstract: SBF-5089 Cellular, PCS, GSM, UMTS IF Amplifier Wireless Data, Satellite Terminals -35 5 InP HBT IRL , SBF-5089(Z) SBF-5089(Z) DC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMD's SBF-5089(Z) is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier , Matching® Applied GaAs HBT Gain & Return Loss Vs Frequency +25c GaAs MESFET 25 InGaP HBT
RF Micro Devices
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BF5Z marking ee hemt hemt Ee SBF 5089 SBF50 marking code 827 sot89
Abstract: GaN HEMT 5 InP HBT 0 100 200 300 400 500 600 700 800 -40 900 , SBF5089Z SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description Features RFMDâ'™s SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington , Temperature Robust 1000V ESD, Class 1C Operates From Single Supply Low Thermal Resistance Optimum RF Micro Devices
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DS111011 SBF5089ZSQ SBF5089ZSR SBF5089ZPCK1 100MH

InP HBT transistor low noise

Abstract: InP transistor HEMT Si BJT GaN HEMT InP HBT RF MEMS LDMOS )UHTXHQF\0+] Parameter Small Signal Gain Min. 18.5 , SBF5089ZDC to 500MHz, Cascadable InGaP/GaAs HBT MMIC Amplifier SBF5089Z DC to 500MHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-89 Product Description RFMD's SBF5089Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington configuration designed , choke are required for operation. Optimum Technology Matching® Applied GaAs HBT 25 22.5 20 17.5 15
RF Micro Devices
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InP HBT transistor low noise

60GHz transistor

Abstract: SFT-9400B Low Duty Cycle Distortion Adjustable Dynamic Range Lwb InGaP HBT Differential Input and Output TIA Offset Adjustment VCC PhotoDetector GaAs HBT Low Noise InP HBT Technology OUT1 Offset OverrideTM Circuit 90mA Low ICC (Typical) SiGe BiCMOS Si BiCMOS Input Buffer SiGe HBT , Receivers GaN HEMT 100GbE Optical Receivers InP HBT 40Gbps_100Gbps Transponders RF MEMS , performance heterojunction bipolar transistor transimpedance amplifier designed for 43Gb/s SONET/SDH, 40GbE
RF Micro Devices
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SFT-9400B SFT9400B 60GHz transistor 60Ghz 98T2 40DPSK SFT9400BSB SFT9400BSR SFT9400BMECH

SiGe POWER TRANSISTOR

Abstract: InP HBT transistor low noise SGA9089Z High IP3, Medium Power Discrete SiGe Transistor SGA9089Z HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description RFMD's SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost , CMOS Si BJT GaN HEMT InP HBT RF MEMS LDMOS 26 P1dB 23 20 2.5 Frequency (GHz
RF Micro Devices
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SiGe POWER TRANSISTOR Gan hemt transistor RFMD 880MH DS111014 SGA9089ZSQ SGA9089ZSR SGA9089Z-EVB1 SGA9089Z-EVB2

Transistor TL 31 AC

Abstract: j142 SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMDâ'™s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation , 26 18.0 GMAX 12.0 GaN HEMT 10.0 InP HBT  23 P1dB 3.1dB NF at 2.44GHz , linearity at a low cost. It can be operated over a wide range of currents depending on the power and
RF Micro Devices
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Transistor TL 31 AC j142 DS110606 1930MH 1990MH SGA9089Z-EVB3 2110MH 2170MH

30 micro farad capacitor 6000 volt

Abstract: HBT transistor must for any bipolar transistor (Si BJT, SiGe BJT, AlGaAs/GaAs HBT, InGaP/GaAs HBT, HBT family on InP , Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology. The amplifier can be matched to , affecting the reliability. Even for a low power amplifier, if the HBT cells are closely spaced on the IC , Linearity Amplifier, a high OIP3 amplifier is made. Compared with other transistor technology, InGaP HBT , InGaP HBT 20.5 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 1900 MHz Excellent Stability
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ECG014 30 micro farad capacitor 6000 volt HBT transistor LL1608-F33NK MCH185A180JK MCH185A560JK SS-000122-000

InP HBT transistor low noise

Abstract: SGA-9089Z SGA-9089Z SGA-9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMD's SGA-9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for , HEMT 23 P1dB 10.0 InP HBT OIP3 =+37.5dBm at 2.44GHz Applications 41 GaAs MESFET InGaP HBT P1dB =+23.8dBm at 2.44GHz 3.1dB NF at 2.44GHz Low Cost, High Performance, Versatility
RF Micro Devices
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1960MH 2440MH EDS-105051

SSG TRANSISTOR

Abstract: BJT with i-v characteristics transistor (Si BJT, SiGe BJT, AlGaAs/GaAs HBT, InGaP/GaAs HBT, HBT family on InP substrate). III. High , Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology. The amplifier can be matched , reliability. Even for a low power amplifier, if the HBT cells are closely spaced on the IC die, the , , a high OIP3 amplifier is made. Compared with other transistor technology, InGaP HBT has easy , Applications n n n n 1800 to 2500 MHz Highly Reliable InGaP HBT Excellent Stability
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ECG015 SSG TRANSISTOR BJT with i-v characteristics LL1608-F15NK 04629 scr 50kA SS-000145-000
Abstract: GMAX 16.0  23 P1dB 10.0 InP HBT  26 12.0 GaN HEMT  29 , SGA9089Z S G 9 Hi g HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Features RFMDâ'™s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from 50MHz to 4.0GHz. The SGA9089Z is optimized for 3V operation. The device provides excellent linearity at a low cost. It can be operated over a wide range of currents RF Micro Devices
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DS140312 870MH 960MH SGA9089Z-EVB4 2400MH 2500MH
Abstract: SGA9089Z SGA9089Z High IP3, Medium Power Discrete SiGe Transistor HIGH IP3, MEDIUM POWER DISCRETE SiGe TRANSISTOR Package: SOT-89 Product Description Features RFMDâ'™s SGA9089Z is a high performance Silicon Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation , ® Si CMOS 14.0 26 Si BJT  12.0 SiGe HBT GaAs pHEMT 18.0 GMAX 10.0 InP , linearity at a low cost. It can be operated over a wide range of currents depending on the power and RF Micro Devices
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InP HBT transistor low noise

Abstract: ECG001 transistor (Si BJT, SiGe BJT, AlGaAs/GaAs HBT, InGaP/GaAs HBT, HBT family on InP substrate). III. High , Bipolar Transistor (InGaP HBT) technology and is designed for use as a 50 Ohm gain block. The amplifier features excellent VSWR, low noise figure and highly linear performance. Typical OIP3 is +25dBm at 1000 , reliability. Even for a low power amplifier, if the HBT cells are closely spaced on the IC die, the , high OIP3 amplifier is made. Compared with other transistor technology, InGaP HBT has easy process
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ECG001 1 micro farad capacitor 100 micro farad capacitor InP HBT transistor current amplifier note darlington ECG00 SS-000349-000

FPD7612P70

Abstract: PHEMT marking code a FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor (pHEMT) optimized for low noise, high frequency applications. 22dBm Output Power (P1dB) 21dB Gain at 1.85GHz , InP HBT RF Parameter Min. P1dB at Gain Compression Typical Performance Typ. Max. Unit
RF Micro Devices
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MIL-HDBK-263 PHEMT marking code a HEMT marking P rfmd model marking code S21/S12 22A114 MIL-STD-1686 J-STD-020C EB7612P70-AC

A83Z

Abstract: A83Z data SGA-8343(Z) SGA-8343(Z) Low Noise, High Gain SiGe HBT LOW NOISE, HIGH GAIN SiGe HBT , Germanium Heterostructure Bipolar Transistor (SiGe HBT) designed for operation from DC to 6GHz. The SGA , Si BJT GaN HEMT InP HBT 2 .4 2 .1 1 .8 1 .5 1 .2 NFMIN 15 10 5 0 0 .9 0 .6 0 , device provides high gain, low NF, and excellent linearity at a low cost. It can be operated at very low bias currents in applications where high linearity is not required. The matte tin finish on the
RF Micro Devices
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SGA-8343Z A83Z A83Z data sga8343z transistor A83 a83 sot RFMD sga-8343Z EDS-101845

InP HBT transistor

Abstract: HBT transistor advanced Indium Gallium Phosphide Heterojunction Bipolar Transistor (InGaP HBT) technology. The amplifier , amplifier, if the HBT cells are closely spaced on the IC die, the transistor junction temperature can still , /GaAs HBT, InGaP/GaAs HBT, HBT family on InP substrate). III. High Linearity HBT is known for its high , with other transistor technology, InGaP HBT has easy process control which allows the OIP3 to be , Highly Reliable InGaP HBT 20.0 dB Typical Gain at 900 MHz 24.0 dBm Typical P1dB at 900 MHz 23.0 dBm
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ECG003 BJT datasheet with i-v characteristics MOTOROLA RF TRANSISTORS srf high end amplifier schematics SS-000375-000

Gan photo diode

Abstract: at-1012 transistor bandwidth greater than 10.5 GHz. Low Noise InGaP HBT Technology Performance is enhanced through the , InP HBT Parameter Min. Specification Typ. Max. Unit Condition Electrical , Features RFMD's SFT-0100 is a high performance heterojunction bipolar transistor transimpedance , conditions and allows high transimpedance with low DC power to be realized. The SFTOptimum Technology 0100 , used for fiber alignment or loss of signal (LOS) detection. GaAs HBT Adjustable Dynamic Range
RF Micro Devices
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STM-64 Gan photo diode at-1012 transistor bjt differential amplifier PRBS31 SFT-0100T OC-192/SDH EDS-102714
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