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Part Manufacturer Description Datasheet BUY
LT3585EDDB-0#PBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-3#TRPBF Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3#TRPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-3 Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3585EDDB-1#TRMPBF Linear Technology LT3585 - Photoflash Charger with Adjustable Input Current and IGBT Driver; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LT3485EDD-1#TR Linear Technology LT3485 - Photoflash Capacitor Chargers with Output Voltage Monitor and Integrated IGBT Drive; Package: DFN; Pins: 10; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

Igbts guide

Catalog Datasheet MFG & Type PDF Document Tags

BUK417-500B

Abstract: TOPFETs FETs and IGBTs VD s (V) R ds(on) (ß) @ ID (A) Id (A) Pd (W) TYPE NUMBER Selection Guide TECH NO LO , TOPFETs and IGBTs VD S (V) ^DS(ON) Selection Guide , including TOPFETs and IGBTs V CE (V) VcE(SAT) (V) lc (A) Selection Guide % (US) Pd (W) TYPE , Philips Semiconductors PowerMOS Transistors including TO P FETs and IGBTs VD S (V) Rdsjon) (ß) @ ID (A) Id w Pd (W) TYPE NUMBER Selection Guide TECH NO LO GY ENVELOPE 50 50 50 50 50
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OCR Scan

IPM PLASMA

Abstract: 200W solar inverter shunt 200W 1 SIP-S H-Bridge www.irf.com · Medical 10787 IGBTs Product Selection Guide vv IGBTs | Selection Guide IGBTs High Efficiency Trench Plasma Display IC Nominal , IRAM | Selection Guide Product Line Overview IRAM Applications Key Products Energy , Bill of Material (BOM) costs. · Audio · High-Voltage ICs · Display · IGBTs · Industrial , Actuators · IGBTs for Motor Drives, Various Loads Integrated Power Modules Voltage & Shunt
International Rectifier
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mosfet 1200V 40A

Abstract: mosfet 1200V 30a smps and Support 600V IGBT SELECTION GUIDE PACKAGE USABLE CURRENT TO-252AA RANGE (D-PAK) 1 ~ 6A , www.intersil.com/igbt - HGTG20N60C3 - 15 ~ 40A With Intersil IGBTs you won't be faced with the , HGTP12N60B3 10 ~ 30A Low Voltage MOSFETs | Our industry leading line of IGBTs come with technical , Guide HGT4E30N06B3S* - HGT4E40N06B3S* - UNLEASHING THE P O W E R OF CONNECTIVITYTM LC , -96585.6 | Printed in USA 5/00 Intersil has developed discrete IGBTs that are tailored to meet your specific
Intersil
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HGTD3N60A4S HGTD3N60C3S HGTD3N60B3S HGTP20N60A4 mosfet 1200V 40A mosfet 1200V 30a smps igbt 20A 1200v Igbts guide HGTG11N120CND MOSFET 1200v 30a LC-96585 HGT1S3N60A4S HGT1S3N60A4DS HGTP3N60B3

HGTH20N40E1D

Abstract: TO218AC HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE (Continued) Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS NOTES: 1. Icm = maximum continuous current rating at Tc = +90°C. 2. IC M = maximum pulsed current rating. 3. tp measured at Tc = +150°C. a a c Selection Guide HARRIS IGBTS WITH AN INTEGRAL REVERSE DIODE MAXIMUM RATINGS BVces (V) 400 ·coo (A) 6 10 10 leu (A) 7.5 12 17.5 TO-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D
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OCR Scan
HGTH20N40E1D TO218AC IGBT Guide HGTG20N50 TO-220AB 5-lead HGTH12N40C1D HGTH20N40C1D HGTP6N50E1D HGTP10N50F1D HGTP10N50E1D

20n60b3d

Abstract: 12n50e HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE (Continued) Selection Guide NO TE S: 3 -4 1 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C. HARRIS IGBTs , Selection Guide HARRIS IGBT'S WITH AN INTEGRAL REVERSE DIODE (Continued) M AXIM UM R A TING S b v CES , ) 12 JCM (A) 40 4 ^ (H*) 1.0 T S -00 1A A (5 LEAD TO -220) H G TB 12N 60D 1C 3-5 IGBTs
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OCR Scan
20n60b3d 12n50e 20N60B3 20N50C1D 12N60D1D 12n60d1c 40P3V 1S20N35G 1S14N36G

igbt inverter welder schematic

Abstract: SCHEMATIC 1000w smps Oxide Semiconductor Field Effect Transistors (MOSFETs), Insulated Gate Bipolar Transistors (IGBTs , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .pg SMPS IGBTs/StealthTM Rectifiers , . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .pg Nomenclature Guide . , IRFP460A 2200W ISL9R3060G2 HGTG40N60A4* FGH60N6S2* 4 x FDH44N50 * These IGBTs do not have , . The IGBT structure does block out the body diode that exists in MOSFETs so we offer these IGBTs with
Fairchild Semiconductor
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igbt inverter welder schematic SCHEMATIC 1000w smps 48V SMPS 1000w 24V 10A SMPS smps 500w half bridge smps 1000W SC70-6 BREAKDOWN/10

IXLF19N250A

Abstract: isoplus ixys mounting /4000V Very High Voltage (VHV) IGBTs SIMPLIFY DESIGN, REDUCE COST AND IMPROVE RELIABILITY FOR HIGH , ,065 IXYS VHV IGBTs vastly simplify the circuitry needed for switching in high voltage designs. They , increasing circuit complexity. VHV IGBTs have the ability to turn switch current on and off, enabling the , Selector Guide, page 23. Applications ISOPLUS i4-PacTM · · · · · · · · · · · , VHV IGBTs. Automated Test Equipment generating or measuring high voltage, pulse circuits and
IXYS
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IXLF19N250A IXEL40N400 isoplus ixys mounting Discrete IGBTS ixys pb free VCES 4000V

s5j53

Abstract: S5783F 2003-3 03-3 E0010A BCE0010A PRODUCT GUIDE Discrete IGBTs Discrete IGBTs 2003 , -220FL 15 2003-3 PRODUCT GUIDE Discrete IGBTs BCE0010A OVERSEAS SUBSIDIARIES AND AFFILIATES , 80 A, Toshiba discrete IGBTs are excellent as power converters in such diverse applications as motor drives, uninterruptible power supply (UPS) units and induction heaters. Some features of Toshiba IGBTs , ) Trench IGBTs (VCE(sat) = 2.1 V typ.) (VCES = 900 V type) Emitter N+ P+ 2.5th-generation IGBTs
Toshiba
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s5j53 S5783F GT30J322 S5783 Electronic IH rice cooker GT50j101 3503C-0109

GT30J124

Abstract: GT30F123 2009-3 PRODUCT GUIDE Discrete IGBTs SEMICONDUCTOR http://www.semicon.toshiba.co.jp/eng 1 Features and Structure IGBT: I nsulated G ate Bipolar Transistor IGBTs combine the MOSFET , that require high breakdown voltage and high current. Toshiba offers a family of fast switching IGBTs , IGBTs The Toshiba discrete IGBTs are available in high-voltage and high-current ratings. They are used , . (1) (2) (3) (4) (5) IGBTs also featuring fast switching Low collector-emitter saturation
Toshiba
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GT30J124 GT30F123 GT45F122 gt30g122 gt40j323 gt30f122 BCE0010E BCE0010F

VOM1271

Abstract: Goods Applications Guide RESOURCES â'¢ â'¢ â'¢ â'¢ Optoelectronics product portfolio , questions contact: LED@vishay.com APPLICATION GUIDE 1/11 VMN-MS6883-1403 THIS DOCUMENT IS , GUIDE 2/11 VMN-MS6883-1403 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS , '¢ Suitable for DC and high peak currents â'"â'" FIMKO EN 60950-1 APPLICATION GUIDE 3/11 , circuit with a power output stage. Ideally suited for driving power IGBTs and MOSFETs used in motor
Vishay Intertechnology
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VOM1271 TCST1230 VLPW0303A2 VO2223A

GT50J101

Abstract: GT50T101 Discrete IGBTs PRODUCT GUIDE Features and Structure ·Low carrier accumulation, excellent , drive Features Rated at 1500 V and 80 A, Toshiba discrete insulated gate bipolar transistors (IGBTs , supply (UPS) units and induction heaters. Toshiba IGBTs help to make equipment efficient reliable and compact. Some features of Toshiba IGBTs are: (1) High speeds (2) Low ON-voltage (3) High-efficiency diode (4) Enhancement-Mode (5) A variety of package types is available Construction Toshiba IGBTs
Toshiba
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GT50T101 mosfet 500V 50A GT60M102 GT60J101 gt15q101 equivalent GT60M101

IGBT 4000V

Abstract: isoplus ixys mounting offering of discrete 2500V and 4000V VHV IGBTs provide a myriad of benefits to system designers in high , ' VHV IGBTs vastly simplify the circuitry needed for switching in high voltage designs. They can enable , increasing circuit complexity. VHV IGBTs have the ability to turn switch current on and off, enabling the , or the IXYS 2004/5 Selector Guide. A broad range of high voltage applications stand to benefit from the simplicity offered by these convenient, discrete VHV IGBTs. Automated Test Equipment generating
IXYS
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IGBT 4000V ixys isoplus 2006--IXYS

180-Degree Commutation Brushless DC Motor

Abstract: Sine wave PWM DC to AC Inverter ics IC-SP-06027 R0 Hitachi Single Chip Inverter IC Application Guide (Applicable models , result. For this reason, be sure to read this "Application Guide" before use. ! ! This mark , device will burst) NOTICES 1. This Application Guide contains the specifications, characteristics(in , , etc. stated in this Application Guide are subject to change without prior notice to improve products , version of this Application Guide and specifications. 3. In no event shall Hitachi be liable for any
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ECN30102 AC230V ECN30206 ECN30207 ECN30601 ECN30603 180-Degree Commutation Brushless DC Motor Sine wave PWM DC to AC Inverter ics 5kw inverter circuit diagram ECN30107s brushless motor 10kW ECN30611 AC115V ECN30105 ECN30107

Sine wave PWM DC to AC Inverter ics

Abstract: 180-Degree Commutation Brushless DC Motor IC-SP-06027 R1 Hitachi Single Chip Inverter IC Application Guide (Applicable models , . For this reason, be sure to read this "Application Guide" before use. ! ! This mark indicates , device will burst) NOTICES 1. This Application Guide contains the specifications, characteristics(in , , etc. stated in this Application Guide are subject to change without prior notice to improve products , version of this Application Guide and specifications. 3. In no event shall Hitachi be liable for any
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ECN30204 ECN30604 semiconductors cross index ECN30206SPR semiconductors cross reference 120-Degree ECN30206SP

Igbts guide

Abstract: ADuM3220 Evaluation Board User Guide UG-217 One Technology Way · P.O. Box 9106 · Norwood, MA 02062-9106 , Guide Input Power Connections .3 Output , .5 REVISION HISTORY 3/12-Rev. 0 to Rev. A Changes to User Guide Title, General Description Section, and , . 5 2/11-Revision 0: Initial Version Rev. A | Page 2 of 8 Evaluation Board User Guide PAD , evaluation board, respectively. Q1 and Q2 can be populated with TO-263 or TO-252 MOSFETs or IGBTs with the
Analog Devices
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ADuM3220 M3221EBZ M3220/AD M3221 M3220/ M3221A M3220
Abstract: Evaluation Board User Guide UG-368 One Technology Way â'¢ P.O. Box 9106 â'¢ Norwood, MA , , respectively. Because the evaluation boards have footprints for IGBTs and MOSFETs in TO-263 or TO , the ADuM3223/ADuM4223 data sheet, which should be consulted in conjunction with this user guide when , | Page 1 of 8 UG-368 Evaluation Board User Guide TABLE OF CONTENTS Features , Board User Guide UG-368 SETTING UP THE EVALUATION BOARD PAD LAYOUT FOR THE DUT INPUT/OUTPUT Analog Devices
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M3223/AD M4223 M3223AEBZ M4223AEBZ M3223 M3223A

GT45F122

Abstract: gt30g122 2008-3 PRODUCT GUIDE Discrete IGBTs s e m i c o n d u c t o r h t tp://w w w.semico n .to shib a .co.jp /en g 1 Features and Structure IGBT: Insulated Gate Bipolar Transistor IGBTs , fast switching IGBTs, which are low in carrier injection and recombination in carrier. Features of the Toshiba Discrete IGBTs The Toshiba discrete IGBTs are available in high-voltage and high-current , flashes and so on. (1) (2) (3) (4) (5) IGBTs also featuring fast switching Low collector-emitter
Toshiba
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gt45f123 GT45f122 Series gt35j321 GT45G122 gt60n323 BCE0010D S-167

mgb20n40cl

Abstract: MGB20N40 protection. · New IGBTs with high short circuit capability in TO­220, TO­247 and TO­264 packages. The , power semiconductor. Motorola Master Selection Guide Page TMOS Power MOSFETs . . . . . . . . . . , Transistors (IGBTs) . . . . . 5.4­22 N­Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4­22 Ignition IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . 5.4­22 Standard and Copackaged IGBTs . . . . . . . . 5.4­22 5.4­1 TMOS Power MOSFETs ® TMOS Power MOSFETs TMOS Power
Motorola
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MGB20N35CL MGW12N120 mgb20n40cl MGB20N40 motorola automotive transistor coil ignition MTD1N60E1 MTSF3N03HD MGP20N14CL 220AB MGP20N35CL MGP20N40CL MGB20N40CL

smps 500W

Abstract: smps 500w half bridge Mode Power Supply (SMPS) IGBTs SMPS IGBT Product Offering DIE SIZE lc @100kHz 1 3A New SMPS IGBTs are now the first-choice power switch for high-frequency, off-line power conversion Intersil , Suggested SMPS IGBTs Typical Power Switch Suggested SMPS IGBTs Suggested SMPS IGBT Selection by Topology/Power Rating "FAST" IGBTs STANDARD HVMOSFETs , IRF840 IRFBC30 IRFBC40 PFC Suggested SMPS IGBTs ADVANCED HVMOSFETs - HGTG7N60A4 -
Intersil
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HGTG20N60A4D HGTG30N60A4 smps 500W 500w half bridge smps smps 1kW IRFP450 full bridge smps 100w half bridge h bridge irf740 HGTG12N60A4 T0-263AB HGTP3N60A4D HGTP3N60A4 HGTD7N60A4S HGTP7N60A4D

mgb20n40cl

Abstract: 340G protection. · New IGBTs with high short circuit capability in TO­220, TO­247 and TO­264 packages. The , power semiconductor. Motorola Master Selection Guide Page TMOS Power MOSFETs . . . . . . . . . . , Transistors (IGBTs) . . . . . 5.4­22 N­Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.4­22 Ignition IGBTs . . . . . . . . . . . . . . . . . . . . . . . . . 5.4­22 Standard and Copackaged IGBTs . . . . . . . . 5.4­22 5.4­1 TMOS Power MOSFETs ® TMOS Power MOSFETs TMOS Power
Motorola
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MGP20N60 340G TO-220AB footprint Motorola Master Selection Guide 221A-06 IGBTs Designed For Automotive Ignition Systems 247AE MGP5N60E MGW20N60D MGW30N60 MGY30N60D
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