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IXTT90P10P IXYS Corporation Power Field-Effect Transistor, 90A I(D), 100V, 0.025ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA, PLASTIC, TO-268, 3 PIN visit Digikey Buy

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IXTT90P10P Datasheet

Part Manufacturer Description PDF Type
IXTT90P10P IXYS FETs - Single, Discrete Semiconductor Products, MOSFET P-CH 100V 90A TO-268 Original

IXTT90P10P

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PolarPTM Power MOSFET VDSS ID25 IXTH90P10P IXTT90P10P = = ≤ RDS(on) - 100V - , IXTT90P10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs Min. VDS = -10V, ID , IXTT90P10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC -240 , 150 IXTH90P10P IXTT90P10P Fig. 8. Transconductance Fig. 7. Input Admittance -100 60 TJ = , IXTT90P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.000 0.100 0.010 IXYS
Original
90P10P
Abstract: IXTT90P10P IXTH90P10P PolarPTM Power MOSFETs VDSS ID25 = = ≤ RDS(on) - 100V , ) IXTT90P10P IXTH90P10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified) gfs , 6,771,478 B2 7,071,537 7,157,338B2 IXTT90P10P IXTH90P10P Fig. 1. Output Characteristics @ T , TC - Degrees Centigrade 100 IXTT90P10P IXTH90P10P Fig. 8. Transconductance Fig. 7. Input , IXTT90P10P IXTH90P10P Fig. 13. Maximum Transient Thermal Impedance Z (th )JC - ºC / W 1 0.1 IXYS
Original

P-CHANNEL 45A TO-247 POWER MOSFET

Abstract: IXTH90P10P IXTH90P10P IXTT90P10P PolarPTM Power MOSFET VDSS ID25 = = RDS(on) - 100V - , DS99986A(03/09) IXTH90P10P IXTT90P10P Symbol Test Conditions (TJ = 25°C, Unless Otherwise Specified , ,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTH90P10P IXTT90P10P Fig. 1 , IXTH90P10P IXTT90P10P Fig. 8. Transconductance Fig. 7. Input Admittance -100 60 TJ = - 40ºC 25ºC , Dimensions. IXYS REF: T_90P10P(B7) 5-13-08 IXTH90P10P IXTT90P10P Fig. 13. Maximum Transient Thermal
IXYS
Original
P-CHANNEL 45A TO-247 POWER MOSFET
Abstract: Preliminary Technical Information PolarPTM Power MOSFET IXTH90P10P IXTT90P10P VDSS ID25 , mΩ DS99986(6/08) IXTH90P10P IXTT90P10P Symbol Test Conditions (TJ = 25°C, unless , ,157,338B2 IXTH90P10P IXTT90P10P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended , 0 25 50 75 TJ - Degrees Centigrade 100 125 150 IXTH90P10P IXTT90P10P Fig , - Volts - 100 IXTH90P10P IXTT90P10P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC IXYS
Original

p-CHANNEL POWER MOSFET 600v

Abstract: IXTH20P50P IXTH52P10P IXTP52P10P IXTQ52P10P IXTR90P10P IXTH90P10P IXTT90P10P IXTR170P10P IXTK170P10P IXTX170P10P
IXYS
Original
p-CHANNEL POWER MOSFET 600v IXTH20P50P IXTP28P065T P channel MOSFET 10A 014 IR MOSFET Transistor P-Channel MOSFET 600v