NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
5N50P DS99446E 405B2 - Datasheet Archive
Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS(on) 1.4 5N50P 5N50P
PolarHVTM Power MOSFET IXTA IXTP IXTV IXTY N-Channel Enhancement Mode Avalanche Rated VDSS = 500 V ID25 = 4.8 A RDS(on) 1.4 5N50P 5N50P 5N50P 5N50P 5N50P 5N50P 5N50P 5N50P TO-263 (IXTA) Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C; RGS = 1 M 500 500 V V VGSS VGSM Continuous Transient ± 30 ± 40 V V ID25 IDM TC = 25°C TC = 25°C, pulse width limited by TJM 4.8 10 A A IAR EAR EAS TC = 25°C TC = 25°C TC = 25°C 5 20 250 A mJ mJ dv/dt IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150°C, RG = 30 10 V/ns PD TC = 25°C 89 W -55 . +150 150 -55 . +150 °C °C °C 300 260 °C °C TJ TJM Tstg TL TSOLD 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s Md Weight Mounting torque TO-220 TO-263 TO-252 (TO-220) 1.13/10 Nm/lb.in. 4 g 3 g 0.8 g G (TAB) TO-220 (IXTP) G G S (TAB) G = Gate S = Source BVDSS VGS = 0 V, ID = 250 A 500 VGS(th) VDS = VGS, ID = 50 A 3.0 IGSS VGS = ±30 V, VDS = 0 V IDSS VDS = VDSS VGS = 0 V RDS(on) VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 % © 2006 IXYS All rights reserved V ±100 TJ = 125°C l V 5.5 A A 1.4 International standard packages Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect nA 5 50 D = Drain TAB = Drain Features l Characteristic Values Min. Typ. Max. (TAB) D S TO-252 (IXTU) TO-252 (IXTY) l Symbol Test Conditions (TJ = 25°C, unless otherwise specified) S Advantages l l l Easy to mount Space savings High power density DS99446E DS99446E(04/06) IXTA 5N50P 5N50P IXTP 5N50P 5N50P IXTY 5N50P 5N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS= 10 V; ID = 0.5 ID25, pulse test 3.0 4.7 S 620 pF 72 pF Crss 6.3 pF td(on) 22 TO-263 (IXTA) Outline ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 26 ns td(off) RG = 30 (External) 65 ns 24 ns 12.6 nC 4.3 nC 5.0 nC tf Qg(on) Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd RthJC RthCS 1.4°C/W (TO-220) °C/W 0.25 Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Min. Typ. Max. Symbol Test Conditions IS VGS = 0 V 5 A ISM Repetitive 15 A VSD IF = IS, VGS = 0 V, Pulse test 1.5 V trr IF = 5 A, -di/dt = 100 A/s, VR = 100 V, VGS = 0 V 400 TO-220 (IXTP) Outline ns Note 1: Pulse test, t 300 s, duty cycle d 2 % TO-252 (IXTY) Outline Dim. Millimeter Min. Max. Inches Min. Max. A A1 2.19 0.89 2.38 1.14 0.086 0.035 0.094 0.045 A2 b 0 0.64 0.13 0.89 0 0.025 0.005 0.035 b1 b2 0.76 5.21 1.14 5.46 0.030 0.205 0.045 0.215 c c1 0.46 0.46 0.58 0.58 0.018 0.018 0.023 0.023 D D1 5.97 4.32 6.22 5.21 0.235 0.170 0.245 0.205 E E1 6.35 4.32 6.73 5.21 0.250 0.170 0.265 0.205 e e1 H L Pins: 1 - Gate 3 - Source 2,4 - Drain 2.28 BSC 4.57 BSC 9.40 10.42 0.51 1.02 0.370 0.020 0.410 0.040 L1 L2 L3 0.64 0.89 2.54 0.025 0.035 0.100 Pins: 1 - Gate 3 - Source 0.040 0.050 0.115 1.02 1.27 2.92 0.090 BSC 0.180 BSC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2 2 - Drain 4 - Drain IXTA 5N50P 5N50P Fig. 1. Output Characteristics Fig. 2. Extended Output Characteristics @ 25ºC @ 25ºC 5 10 VGS = 10V VGS = 10V 9 7V 7V 4 8 6V 6V 7 I D - Amperes I D - Amperes IXTP 5N50P 5N50P IXTY 5N50P 5N50P 3 2 5V 1 6 5 4 3 5V 2 1 0 0 0 1 2 3 4 5 6 7 8 0 3 6 9 V D S - Volts 18 21 24 27 30 Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature @ 125ºC 3.2 5 VGS = 10V VGS = 10V 2.8 7V R D S ( o n ) - Normalized 4 I D - Amperes 15 V D S - Volts Fig. 3. Output Characteristics 6V 3 2 1 5V 2.4 2 I D = 5A 1.6 I D = 2.5A 1.2 0.8 0 0.4 0 2 4 6 8 10 12 14 16 -50 18 -25 V D S - Volts 0 25 50 75 100 125 150 TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature Fig. 5. RDS(on) Norm alized to 0.5 ID25 Value vs. ID 3.4 6.0 VGS = 10V 3 TJ = 125º C 5.0 2.6 I D - Amperes R D S ( o n ) - Normalized 12 2.2 1.8 4.0 3.0 2.0 1.4 TJ = 25º C 1.0 1 0.6 0.0 0 1 2 3 4 5 6 I D - Amperes © 2006 IXYS All rights reserved 7 8 9 10 -50 -25 0 25 50 75 100 TC - Degrees Centigrade 125 150 IXTA 5N50P 5N50P IXTP 5N50P 5N50P IXTY 5N50P 5N50P Fig. 8. Transconductance Fig. 7. Input Adm ittance 7 9 8 6 7 4 TJ = 125º C 25º C -40º C 3 2 TJ = -40º C 6 125º C 25º C g f s - Siemens I D - Amperes 5 5 4 3 2 1 1 0 0 4 4.5 5 5.5 6 6.5 0 7 1 2 V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage 4 5 6 7 10 12 14 Fig. 10. Gate Charge 10 15 9 VG S - Volts TJ = 125º C 6 TJ = 25º C I D = 2.5A 7 9 VDS = 250V 8 12 I S - Amperes 3 I D - Amperes I G = 10mA 6 5 4 3 3 2 1 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1 0 2 4 V S D - Volts 6 8 Q G - nanoCoulombs Fig. 12. Forw ard-Bias Safe Operating Area Fig. 11. Capacitance 100 10000 TJ = 1 º C 50 C iss 1000 C oss 100 T C = 25º C R DS(on) Limit I D - Amperes Capacitance - picoFarads f = 1MHz 10 25µs 1 00µs 1 ms 1 C rss 10 DC 1 1 0ms 0.1 0 5 10 15 20 25 30 35 40 V D S - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 V D S - Volts 1000 IXTA 5N50P 5N50P IXTP 5N50P 5N50P IXTY 5N50P 5N50P Fig. 13. Maximum Transient Thermal Resistance R ( t h ) J C - ºC / W 10.00 1.00 0.10 0.01 0.00001 0.0001 0.001 0.01 Pulse Width - Seconds © 2006 IXYS All rights reserved 0.1 1 10