IXTA14N60P IXTP14N60P IXTQ14N60P DS99329F 338B2 14N60P 12-22-08-G

IXTP14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = RDS(on) 600V 14A 550m

IXTA14N60P IXTA14N60P IXTP14N60P IXTP14N60P IXTQ14N60P IXTQ14N60P PolarHVTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated VDSS ID25 = = RDS(on) 600V 14A 550m TO-263 G S (TAB) TO-220 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 600 V VDGR TJ = 25°C to 150°C, RGS = 1M 600 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 14 A IDM TC = 25°C, pulse width limited by TJM 42 A IA EAS TC = 25°C TC = 25°C 14 900 A mJ PD TC = 25°C 300 W -55 . +150 150 -55 . +150 °C °C °C 300 260 °C °C 1.13/10 Nm/lb.in. 2.5 3.0 5.5 g g g TJ TJM Tstg TL TSOLD 1.6mm (0.062 in.) from case for 10s Plastic body for 10s Md Mounting torque Weight TO-263 TO-220 TO-3P (TO-220)(TO-3P) G (TAB) D S TO-3P G D (TAB) S G = Gate S = Source D = Drain TAB = Drain Features International standard packages Avalanche rated Advantages Easy to mount Space savings High power density Symbol Test Conditions (TJ = 25°C, unless otherwise specified) Characteristic Values Min. Typ. Max. BVDSS VGS = 0V, ID = 250A 600 VGS(th) VDS = VGS, ID = 250A 3.0 IGSS VGS = ± 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 10V, ID = 0.5 · ID25, Note 1 © 2008 IXYS CORPORATION, All rights reserved V 5.5 V ±100 nA 5 A 100 A TJ = 125°C 450 Applications Switched-mode and resonant-mode power supplies DC-DC Converters Laser Drivers AC and DC motor drives Robotics and servo controls 550 m DS99329F DS99329F(12/08) IXTA14N60P IXTA14N60P IXTP14N60P IXTP14N60P IXTQ14N60P IXTQ14N60P Symbol Test Conditions (TJ = 25°C, unless otherwise specified) gfs Characteristic Values Min. Typ. Max. VDS = 20V, ID = 0.5 · ID25, Note 1 7 Coss td(on) tr td(off) tf pF 13 pF 23 nC 16 nC 12 VGS = 10V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 ns 36 Qgd ns 26 RG = 10 (External) ns 70 VGS = 10V, VDS = 0.5 · VDSS, ID = 0.5 · ID25 ns 27 Resistive Switching Times Qg(on) Qgs pF 215 VGS = 0V, VDS = 25V, f = 1MHz Crss S 2500 Ciss 13 nC 0.42 °C/W RthJC RthCS TO-3P (IXTQ) Outline (TO-220) (TO-3P 0.50 0.25 Source-Drain Diode Symbol Test Conditions (TJ = 25°C, unless otherwise specified) °C/W °C/W Characteristic Values Min. Typ. Max. IS VGS = 0V 14 A ISM Repetitive, pulse width limited by TJM 42 A VSD IF = IS, VGS = 0V, Note 1 1.5 V trr IF = 14A, -di/dt = 100A/s VR = 100V, VGS = 0V 500 TO-220 (IXTP) Outline ns Note 1: Pulse test, t 300s; duty cycle, d 2%. TO-263 (IXTA) Outline Pins: 1 - Gate 3 - Source 2 - Drain 4 - Drain IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 338B2 IXTA14N60P IXTA14N60P IXTP14N60P IXTP14N60P IXTQ14N60P IXTQ14N60P Fig. 1. Output Characteristics @ 25ºC Fig. 2. Extended Output Characteristics @ 25ºC 30 14 VGS = 10V 9V 12 VGS = 10V 9V 27 24 21 ID - Amperes ID - Amperes 10 8V 8 6 18 8V 15 12 9 4 7V 6 2 3 0 7V 0 0 1 2 3 4 5 6 7 8 0 3 6 9 15 18 21 24 27 30 Fig. 4. RDS(on) Normalized to ID = 7A Value vs. Junction Temperature Fig. 3. Output Characteristics @ 125ºC 3.2 14 VGS = 10V 8V VGS = 10V 2.8 RDS(on) - Normalized 12 10 ID - Amperes 12 VDS - Volts VDS - Volts 7V 8 6 4 2.4 I D = 14A 2.0 I D = 7A 1.6 1.2 0.8 2 6V 0.4 0 0 2 4 6 8 10 12 14 16 -50 18 -25 0 VDS - Volts Fig. 5. RDS(on) Normalized to ID = 7A Value vs. Drain Current 50 75 100 125 150 Fig. 6. Maximum Drain Current vs. Case Temperature 16 3.4 VGS = 10V 14 3.0 TJ = 125ºC 12 2.6 ID - Amperes RDS(on) - Normalized 25 TJ - Degrees Centigrade 2.2 1.8 1.4 TJ = 25ºC 10 8 6 4 1.0 2 0 0.6 0 3 6 9 12 15 18 ID - Amperes © 2008 IXYS CORPORATION, All rights reserved 21 24 27 30 -50 -25 0 25 50 75 100 125 150 TC - Degrees Centigrade IXYS REF: F_14N60P 14N60P(5J)12-22-08-G 12-22-08-G IXTA14N60P IXTA14N60P IXTP14N60P IXTP14N60P IXTQ14N60P IXTQ14N60P Fig. 8. Transconductance Fig. 7. Input Admittance 50 27 45 24 40 21 g f s - Siemens ID - Amperes 35 TJ = 125ºC 25ºC - 40ºC 30 25 20 TJ = - 40ºC 25ºC 125ºC 18 15 12 9 15 10 6 5 3 0 0 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 0 5 10 15 VGS - Volts 20 25 30 35 40 45 50 ID - Amperes Fig. 9. Forward Voltage Drop of Intrinsic Diode Fig. 10. Gate Charge 50 10 45 9 VDS = 300V I D = 7A 7 VGS - Volts 8 35 IS - Amperes 40 30 25 TJ = 125ºC 20 I G = 10mA 6 5 4 3 15 2 TJ = 25ºC 10 1 5 0 0 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 0 4 8 VSD - Volts 12 16 20 24 28 32 36 QG - NanoCoulombs Fig. 12. Forward-Bias Safe Operating Area Fig. 11. Capacitance 100 10,000 RDS(on) Limit Ciss 1,000 100 ID - Amperes Capacitance - PicoFarads f = 1 MHz Coss 25µs 100µs 10 1ms 10ms 10 TJ = 150ºC Crss TC = 25ºC Single Pulse 1 DC 1 0 5 10 15 20 25 30 35 40 VDS - Volts IXYS reserves the right to change limits, test conditions, and dimensions. 10 100 VDS - Volts 1000 IXTA14N60P IXTA14N60P IXTP14N60P IXTP14N60P IXTQ14N60P IXTQ14N60P Fig. 13. Maximum Transient Thermal Impedance Z (th)JC - ºC / W 1.00 0.10 0.01 0.001 0.01 0.1 1 10 Pulse Width - Seconds © 2008 IXYS CORPORATION, All rights reserved IXYS REF: F_14N60P 14N60P(5J)12-22-08-G 12-22-08-G