50N60B2 IC110 DS99145A 065B1 728B1 123B1

B2-Class High Speed IGBTs Symbol IXGH 50N60B2 IXGT 50N60B2 Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V

HiPerFASTTM IGBT B2-Class High Speed IGBTs Symbol IXGH 50N60B2 50N60B2 IXGT 50N60B2 50N60B2 Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 M 600 Continuous ±20 Transient ±30 V IC25 TC = 25°C (limited by leads) 75 A IC110 IC110 TC = 110°C 50 A ICM TC = 25°C, 1 ms 200 A SSOA (RBSOA) VGE = 15 V, TVJ = 125°C, RG = 10 Clamped inductive load @ 600V PC TC = 25°C TO-247 (IXGH) V VGEM = 600 V = 75 A = 2.0 V = 65 ns V VGES VCES IC25 VCE(sat) tfi typ ICM = 80 W -55 . +150 °C TJM 150 -55 . +150 °C 300 °C E TO-268 (IXGT) G C (TAB) E °C Tstg C A 400 C (TAB) G TJ Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Md Mounting torque (TO-247) 1.13/10Nm/lb.in. Weight TO-247 AD TO-268 Symbol Test Conditions VGE(th) IC = 250 µA, VCE = VGE ICES VCE = VCES VGE = 0 V IGES VCE = 0 V, VGE = ±20 V VCE(sat) IC = 40 A, VGE = 15 V © 2004 IXYS All rights reserved 6 4 g g Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. 3.0 5.0 50 1 TJ = 125°C 1.6 1.5 µA mA ±100 TJ = 25°C TJ = 150°C V nA 2.0 V V G = Gate, E = Emitter, C = Collector, TAB = Collector Features High frequency IGBT High current handling capability MOS Gate turn-on - drive simplicity Applications PFC circuits Uninterruptible power supplies (UPS) Switched-mode and resonant-mode power supplies AC motor speed control DC servo and robot drives DC choppers Advantages High power density Very fast switching speeds for high frequency applications DS99145A DS99145A(03/04) IXGH 50N60B2 50N60B2 IXGT 50N60B2 50N60B2 Symbol gfs Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. IC = 40 A; VCE = 10 V, Pulse test, t 300 µs, duty cycle 2 % 40 S 3500 pF 240 pF 50 pF 140 nC 23 nC 44 nC P Cies Coes 55 VCE = 25 V, VGE = 0 V, f = 1 MHz Cres Qg Qge IC = 40 A, VGE = 15 V, VCE = 0.5 VCES Qgc td(on) tri td(off) tfi 18 ns Inductive load, TJ = 25°C ° 25 ns IC = 40 A, VGE = 15 V VCE = 480 V, RG = Roff = 5 190 td(off) tfi 0.55 0.85 mJ 18 ns 25 VCE = 480 V, RG = Roff = 5 mJ 290 IC = 40 A, VGE = 15 V ns 0.45 Inductive load, TJ = 125°C ° ns 140 mJ e Dim. Millimeter Min. Max. A 4.7 5.3 2.2 2.54 A1 2.2 2.6 A2 b 1.0 1.4 b1 1.65 2.13 b2 2.87 3.12 C .4 .8 D 20.80 21.46 E 15.75 16.26 e 5.20 5.72 L 19.81 20.32 L1 4.50 P 3.55 3.65 Q 5.89 6.40 R 4.32 5.49 S 6.15 BSC Inches Min. Max. .185 .209 .087 .102 .059 .098 .040 .055 .065 .084 .113 .123 .016 .031 .819 .845 .610 .640 0.205 0.225 .780 .800 .177 .140 .144 0.232 0.252 .170 .216 242 BSC ns 1.55 Eoff RthJC RthCK ns ns td(on) Eon 300 65 Eoff tri TO-247 AD Outline TO-268 Outline 0.31 K/W (TO-247) 0.25 K/W Min. Recommended Footprint (Dimensions in inches and mm) IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 065B1 6,306,728B1 728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 123B1 6,306,728B1 728B1 6,683,344 IXGH 50N60B2 50N60B2 IXGT 50N60B2 50N60B2 Fig. 1. Output Characte ristics @ 25 Deg. C Fig. 2. Extended Output Characte ristics @ 25 de g. C 320 80 VGE = 15V 13V 11V 70 9V 60 50 40 30 6V 20 9V 200 160 120 7V 80 10 40 5V 0 5V 0 0.5 1 1.5 2 2.5 3 0 1 2 3 Fig. 3. Output Characteristics @ 125 Deg. C VGE = 15V 13V 11V 70 I C - Amperes 7V 50 6V 30 20 10 7 8 V GE = 15V 1.3 40 6 1.4 9V 60 5 Fig. 4. De pende nce of V CE(sat) on Tem perature V C E (sat)- Normalized 80 4 V C E - Volts V C E - Volts 1.2 I C = 80A 1.1 1.0 0.9 I C = 40A 0.8 0.7 5V 0 I C = 20A 0.6 0.5 1 1.5 2 2.5 3 -50 -25 0 V CE - Volts 25 50 75 100 125 150 8 8.5 TJ - Degrees Centigrade Fig. 5. Collector-to-Em itter Voltage vs. Gate-to-Em itter voltage Fig. 6. Input Adm ittance 200 3.7 TJ = 25ºC 3.4 180 160 3.1 I C = 80A 40A 20A 2.8 2.5 I C - Amperes VC E - Volts 11V 240 7V I C - Amperes I C - Amperes VGE = 15V 13V 280 2.2 140 120 100 80 TJ = 125ºC 25ºC -40ºC 60 1.9 40 1.6 20 1.3 0 5 6 7 8 9 10 11 12 V G E - Volts © 2004 IXYS All rights reserved 13 14 15 16 17 4 4.5 5 5.5 6 6.5 V G E - Volts 7 7.5 IXGH 50N60B2 50N60B2 IXGT 50N60B2 50N60B2 Fig. 8. Dependence of Turn-Off Energy on RG Fig. 7. Transconductance 80 5 4 50 40 30 I C = 80A 3.5 E off - milliJoules g f s - Siemens 60 TJ = 125ºC VGE = 15V VCE = 480V 4.5 TJ = -40ºC 25ºC 125ºC 70 3 2.5 I C = 40A 2 1.5 20 1 10 I C = 20A 0.5 0 0 0 20 40 60 80 100 120 140 160 180 200 5 10 15 20 25 30 35 40 45 I C - Amperes Fig. 9. Dependence of Turn-Off Energy on IC 4 4 3 2.5 TJ = 125ºC 2 1.5 TJ = 25ºC 1 I C = 80A 2.5 2 I C = 40A 1.5 1 0.5 0.5 0 0 20 30 40 50 I C - Amperes 60 70 80 1000 35 45 55 65 75 85 95 105 115 125 TJ - Degrees Centigrade Fig. 12. Dependence of Turn-Off Sw itching Tim e on IC 400 Switching Time - nanosecond td(off) tfi - - - - - TJ = 125ºC VGE = 15V VCE = 480V 500 I C = 20A 25 Fig. 11. Dependence of Turn-Off Sw itching Tim e on RG Switching Time - nanosecond R G = 5 R G = 24.4 - - VGE = 15V VCE = 480V 3.5 E off - milliJoules 3 E off - MilliJoules Fig. 10. Dependence of Turn-Off Energy on Tem perature R G = 5 R G = 24.4 - - - VGE = 15V VCE = 480V 3.5 50 R G - Ohms I C = 20A I C = 40A I C = 80A td(off) tfi - - - - - - 350 R G = 5 VGE = 15V VCE = 480V 300 250 TJ = 125ºC 200 150 TJ = 25ºC 100 100 50 0 5 10 15 20 25 30 35 40 45 20 50 30 R G - Ohms 40 50 60 70 80 I C - Amperes IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,850,072 4,835,592 4,931,844 4,881,106 5,034,796 5,017,508 5,063,307 5,049,961 5,237,481 5,187,117 5,381,025 5,486,715 6,404,065B1 065B1 6,306,728B1 728B1 6,162,665 6,534,343 6,583,505 6,259,123B1 123B1 6,306,728B1 728B1 6,683,344 IXGH 50N60B2 50N60B2 IXGT 50N60B2 50N60B2 Fig. 13. De pendence of Turn-Off Sw itching Tim e on Te m perature Fig. 14. Reverse -Bias Safe Operating Are a 90 td(off) tfi - - - - - - 300 80 R G = 5 VGE = 15V VCE = 480V 250 70 60 200 I C = 40A 150 I C - Amperes Switching Time - nanosecond 350 I C = 20A I C = 80A 100 50 40 TJ = 125º C 30 R G = 10 dV/dT < 10V/ns 20 50 10 0 0 25 35 45 55 65 75 85 95 105 115 125 100 TJ - Degrees Centigrade 200 V 400 CE - Volts 500 600 Fig. 16. Capacitance Fig. 15. Gate Charge 10000 16 VCE = 300V I C = 40A I G = 10mA 14 f = 1 MHz Capacitance - p F 12 VG E - Volts 300 10 8 6 C ies 1000 C oes 100 4 C res 2 0 10 0 30 60 90 120 150 0 5 10 Q G - nanoCoulombs 15 20 25 V C E - Volts 30 35 40 Fig. 17. Maxim um Transient Therm al Resistance 0.35 R ( t h ) J C - ºC / W 0.30 0.25 0.20 0.15 0.10 0.05 0.00 1 © 2004 IXYS All rights reserved 10 Pulse Width - milliseconds 100 1000