NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
NEW DATABASE - 350 MILLION DATASHEETS FROM 8500 MANUFACTURERS
| Part | Manufacturer | Description | Type | Ordering |
| IXGA20N60B | IXYS Corporation | 600V HiPerFAST IGBT |
4 pages, |
Original |  |
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| Catalog Datasheet Results | Type | Document Tags |
| Abstract: IXGA20N60B IXGA7N60B IXGA7N60B IXGA7N60C IXGA7N60C IXGH10N60 IXGH10N60 IXGH12N60C IXGH12N60C IXGH20N60 IXGH20N60 IXGH20N60A IXGH20N60A IXGH20N60B IXGH20N60B IXGH20N60BD1 IXGH20N60BD1 ... | Original |
7 pages, |
SGH10N60RUFD SGP10N60RUF IXGP20N60B SGP10N60RUFD diod 5A IRG4BC30UD bup604 bup314 equivalent HGTG11N120CND SKP15N60 SGH30N60UFD igbt to247 BUP403 IRG4PC50W EQUIVALENT datasheet abstract |
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| Abstract: Cross Reference, V1.0, Apr. 2002 Alphanumerical Cross Reference CoolMOSTM/IGBT/EmConTM/CoolSETTM Power Management & Supply N e v e r s t o p t h i n k i n g . Alphanumerical Cross Reference Revision History: 2002-04 V1.0 Previous Version: Page Subjects (major changes since last revision) Document's layout has been changed: 2002-Sep. For questions on technology, delivery and prices please contact the Infineon Technologies Offices in Germany or the Infineon ... | Original |
51 pages, |
TDA16822 equivalent TOP227Y equivalent led cross reference 2SK1117 KA5M0365R application note TOP221Y equivalent BUP 312 KA5M0380R application note 2SK2056 IGBT cross reference g6551 datasheet abstract |
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| Abstract: HiPerFASTTM IGBT IXGA 20N60B 20N60B IXGP 20N60B 20N60B VCES IC25 VCE(sat)typ tfi = 600 V = 40 A = 1.7 V = 100 ns Preliminary data sheet Symbol Test Conditions Maximum Ratings VCES TJ = 25癈 to 150癈 600 V VCGR TJ = 25癈 to 150癈; RGE = 1 MW 600 V VGES Continuous � V VGEM Transient � V IC25 TC = 25癈 40 A IC90 TC = 90癈 20 A ICM TC = 25癈, 1 ms 80 A SSOA (RBSOA) VGE = 15 V, TVJ = 125癈, RG = 22 W Clamp ... | Original |
4 pages, |
20n60B 20N60B 20N60B abstract |
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| Abstract: n T x YS â- â- I l^V X u HiPerFASTâ„¢ IGBT IXGA 20N60B 20N60B IXGP 20N60B 20N60B Preliminary data sheet Symbol Test Conditions Maximum Ratings V ces Tj = 25°C to 150°C 600 V V cgr Tj = 25°C to 150°C; RGE = 1 Mß 600 V V ges Continuous ±20 V V geh Transient ±30 V 'c25 'c90 'cm Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms 40 20 80 A A A SSOA (RBSOA) VGE =15V,TVJ = 125°C, Rg Clamped inductive load, L = = 22 SI 100 nH U = 40 @0.8Vces A Pc Tc = 25°C 150 W tj -55 . + 150 °C Tjm 150 °C ts.g - ... | OCR Scan |
4 pages, |
20N60B 20N60B abstract |
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| Abstract: Alphanumerical Index A AXC-051 AXC-051 AXC-053 AXC-053 AXC-101 AXC-101 AXC-102 AXC-102 AXL-001 AXL-001 AXL-051 AXL-051 AXV-102 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3 CS 30-12io1 CS 30-14io1 CS 30-16io1 CS 35-08io4 CS 35-12io4 CS 35-14io4 CS 45-08io1 CS 45-12io1 CS 45-16io1 CS 45-16io1R CS 72-12io8 CS 72-16io8 CS 8-08io2 CS 8-12io2 E1-24 E1-24 E1-24 E1-24 E1-5 E1-5 ... | Original |
7 pages, |
MDD 500-22N1 ixys dsei 45-12a 16N60 200n60 C1148 9n80 MCC 90 16io8 IXFN 180N10 40n60 7N60B equivalent DSDI 35-12A DSI 12-06A IXFX 44N80 25N120 AXC-051 AXC-053 AXC-051 abstract |
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| Abstract: HiPerFASTTM IGBT G-Series Insulated Gate Bipolar Transistors (IGBT) IGBT with Fast Diode HiPerFASTTM IGBT G-Series Contents IGBT 3.5 3.5 3.5 3.0 3.0 IXGP IXGP IXGA IXGP IXGA PLUS247 PLUS247 (IXGX) IXGH IXGH IXGH IXGH 20N30 20N30 28N30 28N30 30N30 30N30 40N30 40N30 IXGH IXGH IXGH IXGH 31N60 31N60 38N60 38N60 41N60 41N60 60N60 60N60 TO-264 (IXGK) miniBLOC (IXGN) IXGT 31N60 31N60 IXGT 60N60 60N60 IXGK 60N60 60N60 IXGN 60N60 60N60 IXGN 200N60 200N60 B2-176 B2-176 IXGH 12N100 12N100 IXGH 17N100 17N100 IXGH 20N100 20N100 Y Y Y ä ... | Original |
208 pages, |
20N30 32N60B 32N60CD1 25n120 IGBT G 50N60 50N60A 7N60C 7N60B equivalent 25N120 G20N60 how to test 7N60B 60n60 igbt 12n60c 80n60 datasheet abstract |
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| Infineon (Siemens) Part | Status | Industry Part | Manufacturer | Description |