IW4011B Datasheet, Circuit, PDF, Cross Reference, & Application Note Results |
| Datasheet Search Results | 1 - 4 of about 4 for IW4011B | ||||
|---|---|---|---|---|---|
 |
IW4011B | Beijing Estek Electronics Co., Ltd. | NAND gates provide the system designer with direct implementation of the NAND function | 94.01 Kb, 4 Pages. |  |
 |
|||||
|
IW4011B | N/A | N/A | 109.39 Kb, 4 Pages. | |
|
|||||
|
IW4011BD | Integral | Quad 2-input NAND gate, high-voltage silicon-gate CMOS | 109.39 Kb, 4 Pages. | |
|
|||||
|
IW4011BN | Integral | Quad 2-input NAND gate, high-voltage silicon-gate CMOS | 109.39 Kb, 4 Pages. | |
|
|||||
| Fulltext Datasheet Results | 1 - 4 of about 4 for IW4011B | ||||
|---|---|---|---|---|---|
|
First line: IW4011B 3.0V18V 2518V 100nA 1.0V@5.0V 2.0V@10.0V 2.5V@15.0V Abstract: .. 北京伊泰克电子有限公司 简介 IW4011B是一种可供系统设计师直接实现“与非”功能的与非门。 特性 1、工作电压范围:3.0V~18V 2、超出工作温度范围且在18V时最大输入电 .. Tags: IW4011B | 21.67 Kb | 1 Pages | Original | |
|
|||||
|
First line: IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS Abstract: .. The IW4011B NAND gates provide the system designer with direct emplementation of the NAND function. • Operating Voltage Range: 3.0 to 18 V • Maximum input current of 1 μA at 18 V over full package .. Tags: IW4011BD IW4011B | 109.38 Kb | 4 Pages | Original | |
|
|||||
|
First line: IW4011B IW4011B NAND gates provide system designer with direct implementation NAND function. Abstract: .. IW4011B. Description The IW4011B NAND gates provide the system designer with direct implementation of the NAND function. Features. Operating Voltage Range: 3.0 to 18 V. Maximum input current .. Tags: IW4011B | 94.01 Kb | 4 Pages | Original | |
|
|||||
|
First line: TECHNICAL DATA IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS IW4011B NAND gates provide system designer with direct implementation NAND function. Operating Voltage Range: Maximum input current over full packagetemperature range; 25°C Noise margin (over full package temperature ra Abstract: .. TECHNICAL DATA. IW4011B Quad 2-Input NAND Gate High-Voltage Silicon-Gate CMOS. 1. 14. 1. 14. N SUFFIX PLASTIC. D SUFFIX SOIC. 1 INTEGRAL. The IW4011B NAND gates provide the system designer with direct implementation .. Tags: IW4011B | 128.3 Kb | 5 Pages | Original | |
|
|||||
Access Notice
Unusual activity from your IP address or subnet. Our Cross reference data is temporarily hidden from view. One of our administrators will manually check this activity.
Search Syntax | Privacy Policy | Disclaimer
© 2012 Datasheet Archive
