ITT8505D - Datasheet Archive

 

ITT8505D ADVANCED INFORMATION Features · · · 32% Typical Power Added Efficiency 50 Input/Output Impedance

 

8W Power Amplifier Die (9.5 ­ 10.5 GHz) ITT8505D ITT8505D ADVANCED INFORMATION Features · · · 32% Typical Power Added Efficiency 50 Input/Output Impedance Self-Aligned MSAG® MESFET Process Description Maximum Ratings (T The ITT8505D ITT8505D is a three stage MMIC power amplifier fabricated using GaAsTEK's mature GaAs Self-Aligned MSAG® MESFET Process. This product is fully matched to 50 ohms on both the input and the output. Rating DC Drain Supply Voltage DC Gate Supply Voltage Power Dissipation (TBASE = 70 °C) RF Input Power Junction Temperature Storage Temperature A = 25 °C unless otherwise noted) Symbol VDD VGG PDISS PIN TJ TSTG Value 12 -4 200 150 -40 to +85 Unit Vdc Vdc W mW °C °C ELECTRICAL CHARACTERISTICS VDD=9.0 V, VGG=-1.8 V, TA=25 °C Characteristic Frequency Output Power, Saturated Output Power, P1dB Power Gain (Linear) Gain Flatness Over Frequency Power Added Efficiency Input VSWR Harmonics Spurious Third-Order Intercept Point Symbol PSAT P1dB GP N TOI Advanced Information - Specifications Subject to Change Without Notice Min 9.5 Typ 39 37 23 +/- 1.0 32 TBD Unit GHz dBm dBm dB dB % -20 -60 TBD Max 10.5 dBc dBc dBm 902183 B, April 1999 GaAsTEK 5310 Valley Park Drive Roanoke, VA 24019 USA www.gaastek.com Tel: 1-540-563-3949 1-888-563-3949 (USA) Fax: 1-540-563-8616 1