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Part Manufacturer Description Datasheet BUY
DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

ITT DIODE

Catalog Datasheet MFG & Type PDF Document Tags

ITT DIODE

Abstract: 8 Position 16 Pin SPST dip switch BCO BCO, diode provision BCD complement, diode provision ITT/C & K 3-SERIES Vs. EECO 1776 SERIES , /complement, diode provision, stopped 0-7 ITT/C & K 3-SERIES Vs. EECO 1800 SERIES ITT/C & K P/N Truth , , stopped 0-7 BCD complement, diode provision BCO complement, diode provision, stopped 0-7 ITT/C & K 3 , CROSS REFERENCE GUIDE EECO SWITCH To ITT/ C & K PRODUCTS ® EECO Switch A Transico Company , : sales@eecoswitch.com Revised 02/22/2005 CROSS - REFERENCE GUIDE EECO SWITCH To ITT/ C &K EECO QUICK
EECO Switch
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sx3704

Abstract: BRC157 river 300mW . Base A8A21 D3 I D4 . Base D Zener Diode AF26 , D10 S ilicon D iode Varicap Diode 9 Double S ilicon Diode Varicap Diode , Germanium Diode S ilicon Diode D15 S ilicon Diode V D12 S ilicon Diode Germanium Diode , D iode S6M1 10D2 1N2070 TV6 10 D16 D24 D20 S ilicon Diode / BY127 BY238 , ) Diode CLASSIFIED 1S44 BA128 BA154 w 1N4148 v ITT44 U35063/2 / Germanium Gold-Bonded
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sx3704 BRC157 Germanium Diode aa143 BRC-116 BC107/spice model bf199 1n4148 ITT VT701 R2540 VT702 1N4005 BZX83-C30 BZX79-C30

08/TBA 2800

Abstract: TBA 2800 integrated circuits of ITT. y y y y y y y The TBA 2800 preamplifier 1C contains four main parts: the , Characteristics at V3 = 5 V, TA = 25 °C, photo diode BPW 41, in the circuit Fig. 1 Current Consumption Gain , Transmitter IC and a Transmission Current Amplitude of 1.5 A, and VoL one Transmitter Diode CQY 99 two , Range (Ta ) changed from (-20 to +65°C) to (0 to +65 °C) ITT Semiconductors Group World , ­ ever, our consent must be obtained in all cases. Information furnished by ITT is believed to be
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08/TBA 2800 TBA 2800 A2711 D-79108 D-79008 6251-203-6DS

ITT DIODE

Abstract: DS8830 '¢ Single 5 volt power supply â'¢ High speed â'¢ Diode protected outputs for termination of positive and negative voltage transients â'¢ Diode protected inputs to prevent line ringing â'¢ Short circuit , (-55 to +125 C) temperature range. Please contact Gemini for prices and avaiJibility. ITT GEMINI , Si 1 IT" PLEASE QUOTE STOCK NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 265 , $ ss 2 O iiïïi "LÃH! câ"¢ viri»® ITT GEMINI 266 FOR CURRE:NT PRICES PHONE HARLOW
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DS8830N DS8830 ITT DIODE 55836B

diode code ae 89A

Abstract: 377 hall sensor Edition May 7,1997 6251-345-4PD ITT INTER METALL 4^82711 GOObSflG TIE HAL300 PRELIMINARY , -2-20 Vdd ° OUT 3 2 GND Fig. 1 : Pin configuration 2 MbflE711 QGGbSai IS I ITT INTERMETALL · ITT Semiconductors PRELIMINARY DATA SHEET HAL300 Functional Description This Hall , -15 V. No external reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -1 5 V. Fig. 2: HAL300 block diagram Fig. 3: Timing diagram ITT INTERMETALL · ITT
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diode code ae 89A 377 hall sensor ITT INTERMETALL diode AE 89A ITT semiconductors diode ITT specification HAL300S HAL300UA 6251-345-3PD

D1N4446

Abstract: 1N4446 ITT SEniCOND/ INTERflETA 5GE D 1N4446 4bô5?ll 0003017 Ã"Ã"T â  ISI T- 0> - Silicon Epitaxial Planar Diode fast switching diode. This diode is also available in glass case DO-34 , that leads at a distance of 8 mm from case are kept at ambient temperature. 98 ITT SErilCONJ , Efficiency Measurement Circuit ITT SEniCON»/ INTERISTA SOE 5 â  4Wa71]l DDDaflâ'ž . m 1N4446 Forward , 100 ITT SEniCOND/ INTERJETA SDE D â  4bfl?711 0005fla0 374 â  ISI 1N4446 Leakage current versus
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D1N4446 150D DO-35

diode ITT

Abstract: 1n4448 itt ITT SEMICOND/ INTERMETALL blE D â  4bfl2711 0ÃG31t.fi fibE «ISI LL4448 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical , electrodes are kept at ambient temperature. 92 ITT SEMICON])/ INTERflETALL blE I> â  4bflE711 DDQBlbT , . Rectification Efficiency Measurement Circuit ITT SEMICOND/ INTERPIETALL blE D â  4bflE711 QQQ317D 410 «ISI , 94 ITT SEMICOND/ INTERHETALL blE D â  4ba2711 0003171 357 miSI LL4448 Leakage current versus
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1N4448 diode ITT 1n4448 itt

1n4448 itt

Abstract: diode ITT specification ITT SE!1IC0NJ>/ INTERPIETA SOE D 1N4448 «4baa?ii oooaaai aoo â  isi Silicon Epitaxial Planar Diode fast switching diode. This type in case DO-35 is also available to specification CECC 50.001.023 This diode is also available in glass case DO-34 max. 1.9 Cathode Mark max. 0.52 fl , are kept at ambient temperature. 102 ITT SEPIICOND/ INTERNETA 50E D â  4fafl37].l 0009852 147 â , case are kept at ambient temperature. M- Rectification Efficiency Measurement Circuit 103 ITT
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Color code diode DO-35 diode 1N4448 D1N4448 100X-

ITT DIODE 125

Abstract: to92ua : Pin configuration 2 MböH711 OOOfc.273 ITT INTERMETALL - ITT Semiconductor HAL115 Functional , ©s resistor up to -15 V. No external reverse protection diode is needed at the Vop-Pin for values , Dimensions in mm ITT INTERMETALL â'¢ ITT Semiconductors 7 Mbfl2711 00Db27M HAL115 Absolute Maximum Ratings , 8.3 12 mA 4 4bfl5711 000fa275 bSS ITT INTERMETALL â'¢ ITT Semiconductors HAL115 Electrical , : Recommended pad size SOT-89A Dimensions in mm ITT INTERMETALL â'¢ ITT Semiconductors 7 4bô2711 0GGb27b 5m
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IEC68-2-58 ITT DIODE 125 to92ua 115c hall HALL Sensor TO92UA itt capacitor ITT Semiconductor 115UA HAL115S HAL115UA-E IEC68-2-20

ITT DIODE

Abstract: 1n4151 ITT ITT SEHICOND/ INTERHETALL blE T> m 4bfl2711 QGQ31Sb 040 Misi LL4151 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical , kept at ambient temperature. 80 ITT SENICON])/ INTERMETALL blE D â  4bflE711 D0031S7 T37 â ISI , electrodes are kept at ambient temperature. Rectification Efficiency Measurement Circuit ITT SEHICOND , - 0 2 4 6 8 10 V 82 ITT SEIHCOND/ INTERMETALL LIE » â  4bfi2711 DQDBIS^ AST MISI
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1N4151 1n4151 ITT 500D INTERMETALL QGQ31S DDD31S

ITT DIODE 125

Abstract: Fig. 1 : Pin configuration 2 Mbf l STl l 0Q0fc,273 Ã"Ã"5 ITT INTERMETALL â'¢ ITT , reverse protection diode is needed at the VDD-Pin for values ranging from 0 V to -1 5 V. - 4 , approximately 0.12 g Dimensions in mm ITT INTERMETALL â'¢ ITT Semiconductors â I 4bfl2711 0DDb274 ? n , Temperature Range 1 5.5 8.3 12 mA â  4bä£711 G00b27S bS5 â  ITT INTERMETALL â'¢ ITT Semiconductors HAL115 Electrical Characteristics, continued Symbol Parameter
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ITT DIODE

Abstract: ITT DIODE 125 ITT SEMICOND/ INTERMETALL blE » â  4hÃ2711 DDD317T bHfi MISI BB721 Tuner Diode Silicon Epitaxial Planar Capacitance Diode with very wide effective capacitance variation for tuning the whole range , to +125 °C 106 ITT SEIUCOND/ INTERMETALL blE D â  4bô2711 â¡DQ31Ã"D 3bT «ISI BB721 , VR = 0.5 V to VR = 28 V is 2.5 %. 107 ITT SEMICOND/ INTERMETALL LIE T> â  4bfl2711 DDD31à , voltage 108 ITT SEMICOMA/ INTERMETALL blE D â  4ba27U 0003132 132 MISI BB721 Q-Factor versus
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itt diode DIODE ITT 21

zener diode ITT

Abstract: 8 CHANNEL ANALOGUE SWITCH SPST transients â'¢ Zener diode protected REFERENCE TABLE CONNECTION DIAGRAM OUTLINE TYPE NO. STOCK NO , diode protected REFERENCE TABLE CONNECTION DIAGRAM OUTLINE TYPE NO. STOCK NO. DRWG. NO. SD5001N , resistance 30 SI (typ) â'¢ Low feed-through and feedback transients â'¢ Zener diode protected REFERENCE , MANUFACTURERS PART NO. WHEN ORDERING ITT 128 Signetics Outline Drawings 0 w ¿ Is «t 2 3 i ^ O , " PLEASE QUOTE STOCK NO. AND MANUFACTURERS PART NO. WHEN ORDERING ITT GEMINI 265 Signetics Outline
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SD5000 SD5000N SD5001 SD5100 SD5100N zener diode ITT 8 CHANNEL ANALOGUE SWITCH SPST SD5101N SD5000 quad 041 itt diode ITT DIODE 128 56074E 56075C

delco

Abstract: 2n1100 delco Instr ThmsnCSFEFC 2N1041 Inti Diode SiliconTran Texas Instr ThmsnCSFEFC 2N1042 Gnrl Trans Semitronics , Franel Corp 2N1047 SprgueElec New Jersey Semicoa SprgueElec ITT Electrn SiliconTran SiliconTran SiliconTran ITT Electrn ITT Electrn ITT Electrn ITT Electrn CSA Indus PPC Product Sohtron CSA Indus PPC , Tadiran Isr Gnrl Trans PPC Product SiliconTran Solitron TexslnstLtd Trans-Tek CSA Indus Inti Diode , Inti Diode North Elec 2N1052 Semicoa 2N1053 Semicoa 2N1054 New Jersey 2N1055 Semicoa Transitron 2N1056
Short Form Catalog
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delco 2n1100 delco Elcoma transitron solitron 2n1036 2N1012 2N1013 2N1014 2N1015 2N1015A 2N1015B

16P2N

Abstract: M66S · Supports B, 16 and 32bits · Sink type, source type, 3-state output · Uses a S chm itt input circu , puter ports · FAX 12-bit pre-head driver 2QP4/20P2N-A CMOS · Uses the S chm itt tnput circu , S chm itt input · Regular current output · S e ria l-L a tc h config u ratio n · Schm itt input · C , driver 3Q P48/28P2V-A Bi-CMOS M66503AGP 36P2R Bi-CMOS R -type laser diode driver M665tOP/FP 20P4/2ÖP2N-A H igh speed Bip R-type laser diode · H igh-speed sw itching-20M bps ·
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16P2N-A 16P2N M66S n type laser diode driver n type laser diode M66311P 32P2W M66235FP M66236FP M66238FP 32P2W-A M66271FP

1n4148 ITT

Abstract: 4148 itt ITT SEMICOND/ INTERMETALL blE J> m 4bfl2711 0003152 4T5 WÃ'ISI LL4148 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical , Valid provided that electrodes are kept at ambient temperature. 76 ITT SEMICOND/ INTERflETALL blE  , Circuit ITT SEniCONi/ INTERMETALL blE T> m 4LÃ"5711 â¡003154 273 «ISI LL4148 Forward characteristics , - - - ! | 1 Ì 0 2 4 6 8 10 V -I* 78 ITT
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4148 itt LL4148 dynamic resistance LL4148-1 n4148 D0031S3 DQQ31SS

vaillant

Abstract: Future Electronique ITT Semiconductors Sales Offices / Distributors / Agents ITT Semiconductors France ITT , Kwun Tong, Kowloon Hong Kong Tel. 7 9 7 -2 0 7 8 Fax 7 9 0 -6 0 6 2 Germ any ITT INTERMETALL , 'SÌElx: 56 ' v 3^7U3II3^|h] E& vS: 2561972 2567711-3303 25(303) Japan ITT Semiconductors (FE) Ltd , (1 )6 4 4 7 0 0 8 4 Singapore ITT Semiconductors (FE) Ltd. Representative Office 150 Orchard Road , DIODE BELGIUM Keiberg II Minervastraat 14/B2 B-1930 Zaventem Tel. (0 2 )7 2 5 4 6 6 0 Fax (02) 7 25 4511
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vaillant Future Electronique BKC Semiconductors ITT DIODE 87 SF00500 nedis F-92220 F-93230 D-90425 NL-2718 NL-5321 NL-5320

ITT DIODE

Abstract: diode ITT ITT SEMICOND/ INTERMETALL blE D â  m,fl2711 PDQ31bD 571 MISI LL4154 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical , electrodes are kept at ambient temperature. 84 ITT SEMICON])/ INTERHETALL blE D m 4bfl2711 DDD31bl 408 , Efficiency Measurement Circuit 85 ITT SEIIICON])/ INTERI1ETALL blE J> m 4bfl2711 ODQBlbS 344 MISI LL4154 , 86 ITT SEMICOND/ INTERMETALL blE T> â  4bfl2711 DDD31b3 2Ã"0 «ISI LL4154 Leakage current versus
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1N4154 itt 86 PDQ31

diode 2U 88

Abstract: 1N4446 ITT SEMICON])/ INTERMETALL blE D â  MbflB711 DDDBlbM 117 «ISI LL4446 Silicon Epitaxial Planar Diode fast switching diode in MiniMELF case especially suited for automatic insertion. Identical , electrodes are kept at ambient temperature. 88 ITT SEMICOND/ INTERI1ETALL blE D â  Mbfl2711 0DD31bS 053 , ITT SEmCOND/ INTERMETALL blE P â  4bô2711 D0031t,b T=ÃT LL4446 Forward characteristics Dynamic , reverse voltage LL4446 0,7 0 2 4 6 8 10 V - 90 ITT SEIUCON»/ INTERÃ1ETALL blE D â  HbflS711
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diode 2U 88 2u 45 diode 2U DIODE ITT G 91 35 0DD31 D0031 Q0031

bd3532

Abstract: back-emf Storage Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Pd3 Pd4 Topr , Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Topr Tstg Tjmax Limit 7 , Temperature Range Maximum Junction Temperature Symbol VCC VEN VTT_IN VDDQ ITT Pd1 Pd2 Topr Tstg Tjmax BD3532F , VREF +30m VREF +30m -1.0 50 40 0.9 0.9 0.8 0.8 V ITT=-1.0A to 1.0A *7 Ta=0 to 100 VCC=5V, VDDQ=2.5V VTT_IN=2.5V ITT=-1.0A to 1.0A *7 Ta=0 to 100 VENHIGH VENLOW IEN 2.3 -0.3 7 5.5 0.8 10 V V uA VEN
ROHM
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bd3532 back-emf BD3533 BD3533F/FVM/EKN BD3531F BD3532F/EFV/KN BD3533/31/32 HQFN20V HTSSOP-B20
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