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DC1319B-A Linear Technology BOARD EVAL LED DRIVER LT3756 visit Linear Technology - Now Part of Analog Devices
DC1205A Linear Technology BOARD EVAL LED DRIVER LT3592 visit Linear Technology - Now Part of Analog Devices
DC1160A Linear Technology BOARD EVAL LED DRIVER LT3518 visit Linear Technology - Now Part of Analog Devices
DC1319A-B Linear Technology BOARD EVAL LED DRIVER LT3756-1 visit Linear Technology - Now Part of Analog Devices
LTC4358IDE#TRPBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy
LTC4358IDE#PBF Linear Technology LTC4358 - 5A Ideal Diode; Package: DFN; Pins: 14; Temperature Range: -40°C to 85°C visit Linear Technology - Now Part of Analog Devices Buy

ISS 99 diode

Catalog Datasheet MFG & Type PDF Document Tags

ISS 99 diode

Abstract: à 250 KHz Power efficiency 88 % Voltage conversion efficiency, 99 % Iss , conversion of +5 V to - 5V supplies â'¢ â'¢ â'¢ Portable and mobile equipment 99% open circuit , Current Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA 10 15 20 25 30 , 100 -1 -2 > -3 « T w -5 > -6 -7 -8 llss â'"5 mA T f iss = 0 mA I -9 , 'ž °i S' S 5 g 99 98 97 96 95 94 93 92 2 3 4 5 6 7 8 9 10
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ISS 99 diode

Abstract: well outside the audio band 99% open circuit efficiency Panel meters and LCD negative supply Data , CHARACTERISTICS V gen = + 5V, T amb = 25 °C, Iss = 2.5 mA , Test circuit given below, unless noted , Oscillator freguency 250 KHz Power efficiency 88 % Voltage conversion efficiency, 99 % Iss = 0 mA TEST CIRCUIT 143 WIRELESS - Voltage Converter AVC7660 TYPICAL , Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA 10 15 20 25 30 Load
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ISS 99 diode 250KH AVC7660S9C CT039

ISS 99 diode

Abstract: OPT201 4 1E6 ROUT 55 5 75 CFB 55 2 40E-12 RPHOTO 2 8 100E6 CPHOTO 2 8 4000E-12 DPHOTO 2 8 DIODE .MODEL DIODE .ENDS D * OPAMP MODEL .SUBCKT OPAMP 1 2 3 4 5 C1 11 12 10.49E-12 C2 6 7 45.00E-12 CSS 10 99 61.36E-12 DC 5 53 DX DE 54 5 DX DLP 90 91 DX DLN 92 90 DX DP 4 3 DX EGND 99 0 POLY(2) (3,0) (4,0) 0 .5 .5 FB 7 99 POLY(5) VB VC VE VLP VLN 0 29.43E9 -30E9 30E9 30E9 -30E9 GA 6 0 11 12 107.4E-6 GCM 0 6 10 99 1.074E-9 ISS 3 10 DC 117.0E-6 HLIM 90 0 VLIM 1E3 J1 11 2 10 JX
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OPT201 OPT201KP 30E-9 307E3 709E6 0E-18

00E-6

Abstract: OPT209 egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99.7E6 -99E6 99E6 99E6 -99E6 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 1.005E-9 iss 3 10 dc 16.00E-6 hlim 90 0 vlim 1K j1 11 2 10 jx j2 12 1 10 jx r2 6 9 100.0E3 rd1 4 11 9.947E3 rd2 4 12 9.947E3 ro1 8 5 75 ro2 7 99 , 2 4 1MEG ROUT 55 5 5 CFB 55 2 10pF RPHOTO 2 8 1000MEG CPHOTO 2 8 600pF DPHOTO 2 8 DIODE MODEL DIODE D .ends OPT209 * -* OPAMP MODEL .subckt OPAMP 1 2 3 4 5 * c1
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00E-6 63E-12 000E-12 0E-15

OPT202

Abstract: ISS 99 diode dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99.47E6 -99E6 99E6 99E6 -99E6 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 503.8E-12 iss 3 10 dc 4.000E-6 hlim 90 0 vlim 1K , 2 4 1MEG ROUT 55 5 5 CFB 55 2 3pF RPHOTO 2 8 100MEG CPHOTO 2 8 600pF DPHOTO 2 8 DIODE .MODEL DIODE D .ends OPT202 * -* OPAMP MODEL * .subckt OPAMP 1 2 3 4 5 , ro2 7 99 100 rp 3 4 75.00E3 rss 10 99 50.00E6 vb 9 0 dc 0 vc 3 53 dc .6 ve 54 4 dc .6 vlim
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715E-12 000E-6 527E-3

ISS 99 diode

Abstract: OPT211 dx dlp 90 91 dx dln 92 90 dx dp 4 3 dx egnd 99 0 poly(2) (3,0) (4,0) 0 .5 .5 fb 7 99 poly(5) vb vc ve vlp vln 0 99E7 -99E7 99E7 99E7 -99E7 ga 6 0 11 12 100.5E-6 gcm 0 6 10 99 503.8E-12 iss , * Photodiode RPHOTO 2 7 1000GIG CPHOTO 2 7 600pF DPHOTO 2 7 DIODE CSUB 2 8 80pF .MODEL DIODE D .ENDS , 9.947E3 rd2 4 12 9.947E3 ro1 8 5 5 ro2 7 99 5 rp 3 4 75.00E3 rss 10 99 50.00E6 vb 9 0 dc 0 vc
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OPT211
Abstract: efficiency, 99 % Oscillator frequency Iss = 0 mA TEST CIRCUIT 23/04/98, AVC7660S9C , % efficiency under 2.5 mA load â'¢ â'¢ 99% open circuit efficiency â'¢ Voltage doubling â , Temperature - 65° C to + 150° C ELECTRICAL CHARACTERISTICS VG = + 5V, Tamb = 25 °C. Iss = 2.5 mA , 80 Output Voltage vs Load Current Supply Current vs Supply Voltage Vgen = 2 V Iss = 0 mA , supply voltage, for example generating +6V from a +3V supply. The diode and resistor are used to ensure -
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0A14S77 0000T2
Abstract: Voltage conversion efficiency, Iss = 0 mA 75 250 88 99 2.0 10 150 MIN TYP 400 MAX 850 UNIT HA V V n KHz % , band 99% open circuit efficiency 88% efficiency under 2.5 mA load APPLICATIONS Simple conversion , 5 °C, Iss = 2 .5 mA , Test circuit given below, unless noted PARAMETER Supply Current, lS s = 0 mA , Supply Voltage Iss = 0 mA 10 15 20 25 30 Load Current [mA] 5 6 Vgen [V] 7 Output , +3V supply. The diode and resistor are used to ensure oscillator start up. The diode quickly ends up -
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IRL3803

Abstract: Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode , Typ. Max. Units ­­­ 0.5 ­­­ 0.55 ­­­ 58 °C/W 1 1/29/99 IRLBA3803/P , Q rr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Forward Turn-On Time Min. Typ , 720 p-n junction diode. S ­­­ ­­­ 1.3 V TJ = 25°C, IS = 71A, VGS = 0V ­­­ 120 180 ns TJ = 25
International Rectifier
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IRL3803

4.5V TO 100V INPUT REGULATOR

Abstract: Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt , are on page 8 www.irf.com 1 5/7/99 IRFPS37N50A Static @ TJ = 25°C (unless otherwise , Units °C/W Diode Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse , A G integral reverse ­­­ ­­­ 144 S p-n junction diode. ­­­ ­­­ 1.5 V TJ = 25°C, IS = 36A, VGS = 0V
International Rectifier
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4.5V TO 100V INPUT REGULATOR AN-994

IRF7101

Abstract: IRF7326D2 PD - 93763 IRF7326D2 FETKYTM MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF , Diode Recovery dv/dt Junction and Storage Temperature Range Units -3.6 -2.9 -29 2.0 1.3 16 , /99 This Material Copyrighted By Its Respective Manufacturer IRF7326D2 MOSFET Electrical , Parameter IS Continuous Source Current (Body Diode) ISM Pulsed Source Current (Body Diode) VSD Body
International Rectifier
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IRF7101

IRF7326D2

Abstract: IRF7101 PD - 93763 IRF7326D2 FETKYTM MOSFET / Schottky Diode q q q q q q Co-packaged HEXFET® Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET Low VF , Diode Recovery dv/dt Junction and Storage Temperature Range Units -3.6 -2.9 -29 2.0 1.3 16 , /99 IRF7326D2 MOSFET Electrical Characteristics @ TJ = 25°C (unless otherwise specified , ) MOSFET Source-Drain Ratings and Characteristics Parameter IS Continuous Source Current (Body Diode
International Rectifier
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023mA

Abstract: CD4007A MICROCIRCUIT DATA SHEET Original Creation Date: 07/15/99 Last Update Date: 07/30/99 Last Major Revision Date: 07/15/99 MJCD4007A-X REV 1A0 DUAL COMPLEMENTARY PAIR PLUS INVERTER General , transistors suitable for series /shunt applications. All inputs are protected from static discharge by diode , =0.0V (each input measured separately) 3, 4 INPUTS -100.0 nA 1, 2 ISS Power Supply Current , performed at production burn-in and Group C (operational life test). ISS Power Supply Current VDD
National Semiconductor
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CD4007 CD4007A 023mA 175C 300C JM4007ABCA MIL-STD-883 MIL-STD-1835 M0003466

IRF9910

Abstract: Factor Operating Junction and TSTG 12 9.9 Power Dissipation TJ 10 8.3 Power , ) Turn-Off Delay Time tf Fall Time C iss Input Capacitance C oss Output Capacitance C , Avalanche Current I AR Diode Characteristics Param eter V SD Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage t rr Reverse Recovery Time Q , showing the G integral reverse p-n junction diode. TJ = 25°C, I S = 8.3A, V GS = 0V TJ = 25°C, I S =
International Rectifier
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IRF9910 EIA-481 EIA-541

Siemens photodiode

Abstract: application in fiber-optic networks Laser Diode with Multi-Quantum Well structure Ternary photodiode at rear , Monitor Diode Reverse Voltage Symbol V r max Values 10 Unit V Characteristics All optical data refer to the optical port (10/125|im SM fiber), T q = -40.+ 85°C Laser Diode Optical Output , ^e X Siemens Aktiengesellschaft page(1/4) 2/99 SIEMENS Spectral bandwidth , . ns vF eth n rs tR. *F < 1 ,5
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Siemens photodiode SKL87374X SKL87374A SKL87374G
Abstract: elab.co.uk W ebsite http://www.sem elab.co.uk Prelim. 2/99 im INI S E M E IRFN9130 LAB , < bss !gss !gss ^iss |aA nA c ^OSS ^rss Qg Qgs Qgd ^d(on) Output Capacitance Reverse Transfer , Source Current Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge PACKAGE CHARACTERISTICS ns SOURCE - DRAIN DIODE CHARACTERISTICS !s !s m A ls = -9.3A VGS = 0 ls = -9.3A , http://www.sem elab.co.uk Prelim. 2/99 -
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IRF9130SM

03BPL001

Abstract: beamsplitter 8/28/99 2:30 PM Page 11.14 Pellicle Beamsplitters te 45° in ci de nt uncoated surface fB f D n tr an sm iss io n io ct fle A pellicle , 108.0 158.6 03 BPL 001 03 BPL 003 03 BPL 005 03 BPL 007 03 BPL 011 Diode Laser Optics To , OnLine! www.mellesgriot.com Chpt. 11 Final 8/28/99 2:30 PM Page 11.15 Singlets 400 , WAVELENGTH Pellicle beamsplitter uncoated 1 11.15 Diode Laser Optics Visit Us Online
Melles Griot
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03BPL001 beamsplitter 22-wavelength 03BPL007 03BPL003
Abstract: A Single Pulsed Avalanche Energy (Note 2) 145 mJ dv/dt Peak Diode Recovery dv/dt , ns - 162 335 ns - 76 99 nC - 35 - nC - 18 - nC , ) Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current - - 62 A ISM Maximum Pulsed Drain-Source Diode Forward Current - - 186 A VSD Drain-Source Diode Forward Voltage VGS = 0V, IS = 62A - - 1.2 V KERSEMI
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KSM2614 95MAX 54TYP

ELM9327

Abstract: MA721 external parts, coil, diode and capacitor are possible choices; with external parts, ELM93 series is able , Oscillating frequency Duty ratio Symbol Vst Vhold Iss Vout Ilx Ilxl Fosc Duty L=330H, Cin=Cout , Vhold Iss Vout Ilx Ilxl Fosc Duty L=330H, Cin=Cout=22F, D=MA721, Vss=0V, Top=25°C Condition , 100 120 kHz Vout=2.9V, Switch"ON" 65 75 85 % Symbol Vst Vhold Iss Vout Ilx Ilxl Fosc , *.8V 9 *.9V c, d : Assembly lot No. 50 to 99 External parts To design DC/DC converters using
ELM Technology
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ELM9327 ELM9330 ELM9333

5r199p

Abstract: D66A IPP50R199CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous diode forward current Diode pulse current 2) Reverse diode d v /dt 4) Symbol Conditions IS I S,pulse dv /dt T C=25 °C Value 9.9 40 15 V/ns Unit A Parameter Symbol Conditions min. Values typ. max. Unit , , V DS=0 V V GS=10 V, I D=9.9 A, T j=25 °C V GS=10 V, I D=9.9 A, T j=150 °C Gate resistance RG f =1 , charge Gate charge total Gate plateau voltage Reverse Diode Diode forward voltage Reverse recovery time
Infineon Technologies
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5r199p D66A PG-TO220 5R199P
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