IS201 IS202 IS203 IS204 ISD201 ISD202 ISD203 ISD204 ISQ201 ISQ202 ISQ203 ISQ204 - Datasheet Archive

 

ISD201, ISD202, ISD203, ISD204, ISQ201, ISQ202, ISQ203, ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS

 

IS201 IS201, IS202 IS202, IS203 IS203, IS204 IS204, ISD201 ISD201, ISD202 ISD202, ISD203 ISD203, ISD204 ISD204, ISQ201 ISQ201, ISQ202 ISQ202, ISQ203 ISQ203, ISQ204 ISQ204 HIGH DENSITY PHOTOTRANSISTOR OPTICALLY COUPLED ISOLATORS APPROVALS l UL recognised, File No. E91231 E91231 IS201 IS201 IS202 IS202 IS203 IS203 IS204 IS204 3 7.62 6.62 l l 7.62 4.0 3.0 ISD201 ISD201 ISD202 ISD202 ISD203 ISD203 ISD204 ISD204 Tape&reel - add SMT&R after part no. High Isolation Voltage (5.3kVRMS ,7.5kVPK ) High BVCEO (70V min) All electrical parameter 100% tested Custom electrical selections available OPTION SM 0.5 0.26 3.35 2.54 1 8 2 3 7 1.2 10.16 9.16 7.62 4.0 3.0 13° Max 0.5 3.0 0.5 ISQ201 ISQ201 ISQ202 ISQ202 ISQ203 ISQ203 ISQ204 ISQ204 0.26 3.35 1 10.46 9.86 ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 12 6 11 7 1.2 13 5 7.0 6.0 14 4 10 9 8 7.62 4.0 3.0 13° Max 0.5 0.26 10.16 15 3 20.32 19.32 1.25 0.75 16 2 2.54 7.62 0.6 0.1 6 5 4 OPTION G SURFACE MOUNT 13° Max 3.0 7.0 6.0 APPLICATIONS l Computer terminals l Industrial systems controllers l Signal transmission between systems of different potentials and impedances 7/12/00 4 0.5 FEATURES Options :10mm lead spread - add G after part no. l 6 5 1.2 packages. l 1 2 7.0 6.0 'X' SPECIFICATION APPROVALS l VDE 0884 in 3 available lead form : - STD - G form - SMD approved to CECC 0080 l EN60950 EN60950 pending DESCRIPTION The IS20*, ISD20 ISD20*, ISQ20 ISQ20* coupled isolators consist of infrared light emitting diodes and NPN silicon photo Dimensions in mm 2.54 3.0 0.5 3.35 0.26 ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91021m-AAS/A2 ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -55°C to + 125°C Operating Temperature -55°C to + 100°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Power Dissipation 70V 6V 150mW POWER DISSIPATION Total Power Dissipation 200mW (derate linearly 2.67mW/°C above 25°C) ELECTRICAL CHARACTERISTICS ( TA = 25°C Unless otherwise noted ) PARAMETER Input Output Coupled MIN TYP MAX UNITS Forward Voltage (VF) Reverse Voltage (VR) Reverse Current (IR) 6 Collector-emitter Breakdown (BVCEO) ( Note 2 ) Emitter-collector Breakdown (BVECO) Collector-emitter Dark Current (ICEO) Current Transfer Ratio (CTR) (Note 2) IS201 IS201, ISD201 ISD201, ISQ201 ISQ201 IS201 IS201, ISD201 ISD201, ISQ201 ISQ201 IS202 IS202, ISD202 ISD202, ISQ202 ISQ202 IS202 IS202, ISD202 ISD202, ISQ202 ISQ202 IS203 IS203, ISD203 ISD203, ISQ203 ISQ203 IS203 IS203, ISD203 ISD203, ISQ203 ISQ203 IS204 IS204, ISD204 ISD204, ISQ204 ISQ204 IS204 IS204, ISD204 ISD204, ISQ204 ISQ204 Collector-emitter Saturation Voltage VCE(SAT) Input to Output Isolation Voltage VISO Input-output Isolation Resistance RISO Output Turn on Time tON Output Turn off Time tOFF Note 1 Note 2 7/12/00 1.2 1.65 TEST CONDITION 70 6 50 75 10 125 30 225 50 200 100 250 450 400 0.2 5300 7500 5x1010 3.0 2.5 0.4 IF = 50mA IR = 10µA VR = 6V V 10 V V µA IC = 1mA V nA IE = 100µA VCE = 10V % % % % % % % % V VRMS VPK µs µs 10mA IF , 10V VCE 1mA IF , 10V VCE 10mA IF , 10V VCE 1mA IF , 10V VCE 10mA IF , 10V VCE 1mA IF , 10V VCE 10mA IF , 10V VCE 1mA IF , 10V VCE 10mA IF , 2mA IC See note 1 See note 1 VIO = 500V (note 1) IF = 10mA VCE = 5V, RL = 75 Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. DB91021m-AAS/A2 Relative Current Transfer Ratio vs. Ambient Temperature Collector Power Dissipation vs. Ambient Temperature 1.5 Relative current transfer ratio Collector power dissipation P C (mW) 200 150 100 50 IF = 10mA VCE = 10V 1.0 0.5 0 0 -30 0 25 50 75 100 -30 125 0 25 50 75 100 Ambient temperature TA ( °C ) Ambient temperature TA ( °C ) Relative Current Transfer Ratio vs. Ambient Temperature Forward Current vs. Ambient Temperature 60 1.5 Relative current transfer ratio Forward current I F (mA) 50 40 30 20 10 0 IF = 1mA VCE = 10V 1.0 0.5 0 -30 0 25 50 75 100 125 -30 Ambient temperature TA ( °C ) (V) Relative current transfer ratio CE(SAT) Collector-emitter saturation voltage V 75 100 1.4 IF = 10mA IC = 2mA 0.16 0.12 0.08 0.04 0 1.2 1.0 0.8 0.6 0.4 VCE = 10V TA = 25°C 0.2 0 -30 0 25 50 75 Ambient temperature TA ( °C ) 7/12/00 50 Relative Current Transfer Ratio vs. Forward Current 0.28 0.20 25 Ambient temperature TA ( °C ) Collector-emitter Saturation Voltage vs. Ambient Temperature 0.24 0 100 1 2 5 10 20 50 Forward current IF (mA) DB91021m-AAS/A2