IS658A IS659B ISTS658A ISTS659B DB91078-AAS/A2

IS659B SIDE LOOK MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 0.8 C 0.5 1.6 2.8 0.75 1.15 1.5 R

IS658A IS658A IS659B IS659B SIDE LOOK MATCHED INFRARED EMITTER DETECTOR PAIR PHOTOTRANSISTOR OUTPUT Dimensions in mm 0.8 C 0.5 1.6 2.8 0.75 1.15 1.5 R 0.5 0.3 max 2.15 4.0 R 0.8 3.0 1 2 2 1.7 1 2.54 1 60° 0.15 0.8 1.4 0.5 min 0.45 0.4 0.8 2 ISTS658A ISTS658A ISTS659B ISTS659B DESCRIPTION The IS658A IS658A ( Gallium Arsenide Emitting Diode ) and the IS659B IS659B ( NPN Silicon Photo Transistor ) are a mechanically and spectrally matched emitter detector side looking pair. FEATURES l Side looking package. l Detector has tinted plastic package for visible light cut out l LED has high output, Radiant Intensity :IE = 0.7mW min. at IF = 20mA l All electrical parameters are 100% tested APPLICATIONS l Floppy disk drives l Infrared applied systems l VCRs, Video camera l Optoelectronic switches ISOCOM COMPONENTS LTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1YD Tel: (01429) 863609 Fax :(01429) 863581 7/12/00 0.8 max 16.5 min ABSOLUTE MAXIMUM RATINGS (25°C unless otherwise specified) Storage Temperature -40°C to + 85°C Operating Temperature -25°C to + 85°C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260°C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 5V 75mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO Emitter-collector Voltage BVECO Collector Current IC Power Dissipation 30V 5V 20mA 75mW ISOCOM INC 1024 S. Greenville Ave, Suite 240, Allen, TX 75002 USA Tel: (214) 495-0755 Fax: (214) 495-0901 e-mail info@isocom.com http://www.isocom.com DB91078-AAS/A2 DB91078-AAS/A2 ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted ) PARAMETER IS658A IS658A Emitter IS659B IS659B Detector Forward Voltage (VF) Reverse Current (IR) Radiant Flux (IE) Peak Emission Wavelength Spectrum Radiation Bandwidth Beam Emission Angle MIN TYP MAX UNITS 1.2 1.6 100 0.7 940 50 ±30 TEST CONDITION V µA mW/sr nm nm deg. IF = 20mA VR = 5V IF = 20mA IF = 20mA IF = 20mA Collector-emitter Breakdown (BVCEO) ( Note 1 ) 30 V IC = 1mA Ee = 0mW/cm2 Emitter-collector Breakdown (BVECO) 5 V IE = 100µA Ee = 0mW/cm2 nA VCE = 10V Ee = 0mW/cm2 mA 5V VCE , = 940nm Ee = 1mW/cm2 V IC = 0.1mA Ee = 0.5mW/cm2 Collector-emitter Dark Current (ICEO) On-State Collector Current IC ( ON ) 100 0.2 Collector-emitter Saturation Voltage VCE(SAT) 0.4 tr tf 3 3.5 µs µs VCC= 2V, IC= 2mA, RL = 100 Peak Sensitivity Wavelength Beam Acceptance Angle 940 ±15 nm deg. IF = 20mA Rise Time Fall Time Note 1 7/12/00 Special Selections are available on request. Please consult the factory. DB91078-AAS/A2 DB91078-AAS/A2 Collector Power Dissipation vs. Ambient Temperature Forward Current vs. Ambient Temperature 100 Collector power dissipation P C (mW) Forward current I F (mA) 60 50 40 30 20 10 75 50 25 0 0 -25 0 25 50 75 100 Ambient temperature TA ( °C ) -25 125 0 25 50 75 100 Ambient temperature TA ( °C ) Spectral Distribution Rise and Fall Time vs. Load Resistance 100 Rise and fall time tr, tf ( µs) 1.0 Relative radiant intensity 125 0.5 0 VCE = 2V IC = 2mA TA = 25°C 50 tf 20 tr 10 tr 5 tf 2 1 840 940 1040 0.1 0.2 0.5 1 2 5 10 Load resistance RL (k) Wavelength (nm) Relative Radiant Intensity vs. Forward Current Relative Collector Current vs. Irradiance 5.0 5.0 VCE = 5V 4.0 Relative collector current Relative radiant intensity 4.0 3.0 2.0 1.0 0 2.0 1.0 0 0 20 40 60 80 Forward current IF (mA) 7/12/00 3.0 100 0 1 2 3 4 2 Irradiance Ee ( mW/cm ) 5 DB91078-AAS/A2 DB91078-AAS/A2