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IS21I2

Catalog Datasheet MFG & Type PDF Document Tags

BAP63

Abstract: '­ dB IF = 10 mA; f = 2450 MHz s212 1.5 14.5 IF = 10 mA; f = 1800 MHz insertion loss 0.9 VR = 0; f = 900 MHz IF = 1 mA; f = 2450 MHz s212  IF = 1 mA; f = 1800 MHz insertion loss 1.8 IF = 0.5 mA; f = 2450 MHz s212 1.17 IF = 0.5 mA; f = 1800 MHz insertion loss  VR = 0; f = 2450 MHz s212  3 VR = 0; f = 1800 MHz isolation 3.5 IF = 100 mA; f = 100 MHz; note 1 s212 2.5 1.95 IF = 10 mA; f = 100 MHz
NXP Semiconductors
Original
BAP63 M3D102 BAP63-05W MAM382 R77/03/
Abstract: IF = 100 mA s212 s212 s212 s212 s212 isolation , and inserted in series with a 50  stripline circuit. Tamb = 25 ï'°C. Insertion loss (s212 , (s212) of the diode as a function of frequency; typical values. NXP Semiconductors Product NXP Semiconductors
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BAP1321-03 SC-76
Abstract: mA; f = 100 MHz; note 1 rD 10 20  IF = 10 mA; f = 100 MHz; note 1 s212 , = 0; f = 2450 MHz isolation 3.8 0.7 VR = 0; f = 1800 MHz s212 2 IF = 100 , mA; f = 2450 MHz s212 insertion loss dB IF = 10 mA; f = 1800 MHz s212 dB , s212 2.06 IF = 0.5 mA; f = 2450 MHz 0.10 ï'­ dB IF = 100 mA; f = 2450 MHz 0.16 , loss (s212) of the diode as a function of frequency; typical values. 2001 Apr 17 1.5 (3 NXP Semiconductors
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BAP64-06W MGU320 R77/02/
Abstract: s212  1.8 VR = 0; f = 1800 MHz isolation 3 1.17 IF = 100 mA; f = 100 MHz; note 1 s212 1.95 IF = 10 mA; f = 100 MHz; note 1 7.8 ï'­ dB IF = 0.5 mA; f = 900 MHz 0.21 ï'­ dB IF = 0.5 mA; f = 1800 MHz s212 insertion loss 0.28 ï , IF = 1 mA; f = 1800 MHz s212 insertion loss 0.26 ï'­ dB IF = 1 mA; f = 2450 MHz 0.35 ï'­ dB IF = 10 mA; f = 900 MHz 0.13 ï'­ dB IF = 10 mA; f = 1800 MHz s212 NXP Semiconductors
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BAP63-03 R77/04/
Abstract: 0.35 ï'­  10.2 ï'­ dB 5.8 ï'­ dB VR = 0; f = 2450 MHz s212 isolation VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 4.1 ï'­ dB 0.1 ï'­ dB 0.14 ï'­ dB IF = 1 mA; f = 2450 MHz s212 IF = 1 mA; f = 900 MHz IF = 1 mA; f = 1800 , 0.06 ï'­ dB 0.1 ï'­ dB IF = 10 mA; f = 2450 MHz s212 ï'­ ï'­ IF = 10 mA; f = 1800 MHz insertion loss 0.06 0.1 IF = 5 mA; f = 2450 MHz s212 IF = 5 mA; f = NXP Semiconductors
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BAP65-03
Abstract: 1.2 1.8  IF = 100 mA isolation VR = 60 V IF = 0.5 mA s212 V VR = 20 , — 15.7 ï'­ dB f = 100 MHz; note 1 VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 , '­ dB IF = 10 mA; f = 1800 MHz s212 dB ï'­ IF = 1 mA; f = 2450 MHz insertion loss ï'­ 0.43 IF = 1 mA; f = 1800 MHz s212 0.35 IF = 0.5 mA; f = 2450 MHz , 900 MHz 0.10 ï'­ dB IF = 100 mA; f = 1800 MHz s212 0.18 ï'­ dB IF = NXP Semiconductors
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M3D088 BAP1321-04 MAM107 R77/01/
Abstract: V; f = 1 MHz rD 0.9 0.65 0.95  IF = 10 mA; f = 100 MHz; note 1 s212 , 9.4 ï'­ dB VR = 0; f = 1800 MHz s212 insertion loss 4.8 ï'­ dB VR = 0 , 1800 MHz s212 insertion loss 0.18 ï'­ dB IF = 1 mA; f = 2450 MHz 0.28 ï , s212 0.16 IF = 5 mA; f = 2450 MHz 0.15 ï'­ dB IF = 10 mA; f = 2450 MHz 0.25 , IF = 100 mA; f = 900 MHz IF = 100 mA; f = 1800 MHz s212 0.24 ï'­ dB L NXP Semiconductors
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BAP65-05 MAM108
Abstract: 100 mA; f = 100 MHz s212 - 10 - dB - 5.8 - dB VR = 0; f = 2450 MHz insertion loss VR = 0; f = 900 MHz VR = 0; f = 1800 MHz s212 isolation - 4.4 - , s212 - IF = 1 mA; f = 2450 MHz - 0.13 - dB All information provided in this , Unit s212 insertion loss IF = 10 mA; f = 900 MHz - 0.07 - dB IF = 10 mA , 900 MHz IF = 100 mA; f = 1800 MHz s212 - 0.128 - dB L charge carrier NXP Semiconductors
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BAP65-02
Abstract: s212 ï'­ 15.7 ï'­ dB VR = 0; f = 2450 MHz insertion loss ï'­ 13.5 ï'­ dB IF = 0.5 mA; f = 900 MHz ï'­ 1.84 ï'­ dB IF = 0.5 mA; f = 1800 MHz s212 ï , ; f = 900 MHz ï'­ 1.08 ï'­ dB IF = 1 mA; f = 1800 MHz s212 ï'­ 1.13 ï , 1800 MHz s212 ï'­ 0.36 ï'­ dB 1.05 ï'­ s 1.6 ï'­ nH L , . Tamb = 25 ï'°C. Insertion loss s212 of the diode in on-state as a function of frequency NXP Semiconductors
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BAP50-05W
Abstract: Conditions Min Typ Max Unit s212 insertion power gain f = 450 MHz - - 18.5 , s212 insertion power gain f = 100 MHz ICC(tot) = 6 mA maximum stable gain 24.5 - , - dB ICC(tot) = 6 mA - 24.5 - dB 150 MHz frequency s212 insertion , 23.0 - dB 450 MHz frequency s212 insertion power gain f = 450 MHz ICC(tot) = , - dB ICC(tot) = 6 mA - 20.5 - dB 900 MHz frequency s212 insertion NXP Semiconductors
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BGU6102 BGU6101 BGU6104
Abstract: - VR = 0; f = 1800 MHz s212 - IF = 100 mA; f = 100 MHz - 3.5 - dB , Parameter Conditions Min Typ Max Unit s212 insertion loss IF = 1 mA; f = 900 , MHz IF = 10 mA; f = 1800 MHz s212 insertion loss - IF = 5 mA; f = 2450 MHz s212 insertion loss IF = 5 mA; f = 900 MHz IF = 5 mA; f = 1800 MHz s212 - 0.21 - dB , the analyzer Tee network. Tamb = 25 ï'°C. Fig 3. Insertion loss (s212) of the diode in NXP Semiconductors
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BAP65-05W

Transistor S 40442

Abstract: THN5601SF IS21I2 IS21I2 -5 -5 -10 1.0 1.5 2.0 2.5 3.0 IS21I2 -5 -10 0.5 5 , 15 18 14 12 5 10 6 ) MAG 4 2 IS21I2 0 2 IS21I -2 -4 0.5 1.0 1.5 2.0 2.5 3.0 IS21I2 0 -2 -5 6 4 2 0 MAG 8 , and MAG vs. Frequency VCE = 4.8 V. IC = 50 mA IS21I2 0 -2 -4 0.5 6 4 0 -4 , 6 2 0 IS21I -2 2 4 -2 -4 2 IS21I2 0 -2 -4 0.5 1.0 1.5
AUK
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THN5601SF Transistor S 40442 61529 78262 161-717 37185 100GH 300GH 500GH 700GH 900GH

16-2-472

Abstract: 161-717 10 0 ) 0 0 IS21I2 IS21I2 -5 -5 -10 1.0 1.5 2.0 2.5 freq, GHz , 3.0 IS21I2 -5 -10 0.5 5 ( ( ) 5 ( ( ( ( ) MAG MAG MAG 5 , www.tachyonics.co.kr 3.0 IS21I2 0 -2 -5 6 4 2 0 MAG 8 ( ( ) MAG 8 , Frequency. Vce=4.8V. Ic = 50mA www.tachyonics.co.kr 3.0 IS21I2 0 -2 -4 6 4 2 0 , =4.8V. Ic = 80mA www.tachyonics.co.kr 3.0 IS21I2 0 0.5 1.0 1.5 2.0 2.5 3.0
Tachyonics
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16-2-472 45650 SMD IC MARKING GP marking am1 smd hn6501 25804 900MH 000GH

MAX2470

Abstract: MAX2470EUT-T 200 fIN = 10MHz HI/LO = VCC Gain (Note 3) IS21I2 fIN = 200MHz Noise Figure 2 NF , TMAX MAX 500 10 fIN = 10MHz IS21I2 TYP 16.9 11.3 15.6 dB 17.8 Voltage Gain , +25°C 13.0 IS21I2 (dB) IS21I2 (dB) 14.0 17.0 MAX2470/71-05 TA = -40°C MAX2470
Maxim Integrated Products
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MAX2471 MAX2470EUT-T MAX2471EUT-T 54 dbm sot23-6 500MH MAX2470/MAX2471 200MH

rf amplifier 10mhz

Abstract: MAX2470 200 fIN = 10MHz HI/LO = VCC Gain (Note 3) IS21I2 fIN = 200MHz Noise Figure 2 NF , , TA = TMIN to TMAX MAX 500 10 fIN = 10MHz IS21I2 TYP 16.9 11.3 15.6 dB 17.8 , +25°C 13.0 IS21I2 (dB) IS21I2 (dB) 14.0 17.0 MAX2470/71-05 TA = -40°C MAX2470
Maxim Integrated Products
Original
rf amplifier 10mhz max2470 evaluation kits

LT3046

Abstract: 305 motorola MOTOROLA SC (XSTRS/R F) MOTOROLA â  SEMICONDUCTOR TECHNICAL DATA 4bE D b3b?2S4 00=14224 4 â  flOTb T33-05 The RF Line NPN Silicon High Frequency Transistor . designed for ultra-linear communications or instrumentation applications. â'¢ Low Noise â'" 2.5 dB Typ @ f - 200 MHz â'¢ High Gain â'" IS21I2 = 15 dB Typ @ f = 300 MHz â'¢ Low Distortion â'" ITO - 45 dBm Typ @ f = 300 MHz LT3046 le = 150 mA , Insertion Gain IVqe = 14 V, lc = 40 mA, f - 300 MHz) IS21I2 â'" 15.5 â'" dB Output Power 1 dB Compression
-
OCR Scan
305 motorola motorola rf Power Transistor t 228 20I2S

TA4000F

Abstract: s22p 957 TOSHIBA TA4000F IS21I2 - f NF - f Ta = 25°C Vcc = 5V , 0.1 0.3 0.5 1 FREQUENCY f (GHz) po ; im3 - pin IS21I2, nf, icc - vcc
-
OCR Scan
s22p 2L2 marking 700MH 400MH 961001EBA2 IS12P 401MH

MJE 15024

Abstract: BF111 Gain, IS21I2 (dB) 30 VCE = 2 V, IC = 20 mA 20 VCE = 2 V, IC = 5 mA 10 0 0.1 1 2 VCE = 2 V, IC = 5 mA 30 MSG 20 IS21I2 MAG 10 0 0.1 10 12 1 2 10 , 30.00 VCE = 2 V, IC = 20 mA 30 MSG 20 IS21I2 MAG 10 1 2 10 Frequency, f , AVAILABLE GAIN vs. COLLECTOR CURRENT Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 , , MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) Forward Insertion Gain
California Eastern Laboratories
Original
NE662M04 2SC5508 MJE 15024 BF111 TRANSISTOR 9642 NE662M04-T2

SEMICONDUCTO applications

Abstract: D200-400 source and load impedance - 75 - Q Gt transducer gain = IS21I2 28.5 30 31.5 dB agt flatness of , lB supply current - 165 - mA Gt transducer gain = IS21I2 28 30 32 dB agt flatness of frequency
-
OCR Scan
SEMICONDUCTO applications D200-400 philips catv 860 amplifier ic OM2Q83/86

7011 NPN TRANSISTOR

Abstract: 150J10 Forward Insertion Gain, IS21I2 (dB) 30 MSG 20 IS21I2 10 10 VCE = 2 V, IC = 5 mA MAG 0 , Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available , MSG 20 IS21I2 MAG 10.00 10 5.00 0 0.1 0.00 1 2 10 1 10 100 , AVAILABLE GAIN vs. COLLECTOR CURRENT 30.00 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2
California Eastern Laboratories
Original
7011 NPN TRANSISTOR 150J10

MJE 15024

Abstract: NE662M04 , IC = 5 mA Forward Insertion Gain, IS21I2 (dB) 30 MSG 20 IS21I2 10 10 VCE = 2 V, IC = 5 , ) Maximum Available Gain, MAG (dB) Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum , 30 MSG 20 IS21I2 MAG 10.00 10 5.00 0 0.1 0.00 1 2 10 1 10 100 , AVAILABLE GAIN vs. COLLECTOR CURRENT 30.00 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2
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Original
transistor T79 ghz T79 "NPN Transistor" 0411 02 027 000 NA 6884

MJE 15024

Abstract: NE662M04 ) Forward Insertion Gain, IS21I2 (dB) 30 VCE = 2 V, IC = 20 mA 20 VCE = 2 V, IC = 5 mA 10 0 0.1 1 2 VCE = 2 V, IC = 5 mA 30 MSG 20 IS21I2 MAG 10 0 0.1 10 12 , . COLLECTOR CURRENT 30.00 VCE = 2 V, IC = 20 mA 30 MSG 20 IS21I2 MAG 10 1 2 10 , , IS21I2 Maximum Available Gain, MAG (dB) f = 2 GHz, VCE = 2 V 0.00 0 0.1 1 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) Forward Insertion
NEC
Original
2SC550 007E-9 S21E
Abstract: IS DC supply current s212 insertion power gain f = 1 GHz NF noise figure f , current s212 insertion power gain CONDITIONS MIN. TYP. 20.8 22 dB 20 , 4.3 dB f = 2.2 GHz ï'­ 4.3 4.7 dB BW bandwidth at s212 ï'­3 dB below , values. Fig.10 Insertion gain (s212) as a function of frequency; typical values. MLD908 NXP Semiconductors
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MBD128 BGA2712 MAM455

T79 SOT 23

Abstract: IC AT 6884 = 20 mA 30 MSG 20 IS21I2 10 20 IS21I2 MAG MAG 10 0 0.1 1 2 10 0 0.1 , VOLTAGE 0.50 Maximum Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG , Stable Gain, MSG (dB) Insertion Power Gain, IS21I2 Maximum Available Gain, MAG (dB) f = 1 GHz, VCE = 2
NEC
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T79 SOT 23 IC AT 6884
Abstract: DC supply current 33.3 ï'­ mA s212 insertion power gain f = 1 GHz 21.4 , s212 insertion power gain CONDITIONS MIN. 29 TYP. 33.3 45 mA f = 1 GHz ï , bandwidth at s212 ï'­3 dB below flat gain at 1 GHz ï'­ PL(sat) saturated load power f = 1 , a function of frequency; typical values. Fig.10 Insertion gain (s212) as a function of NXP Semiconductors
Original
BGA2771
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