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IRLZ34NPBF Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE PACKAGE-3 visit Digikey Buy
IRLZ34NSPBF Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRLZ34NSTRLPBF Infineon Technologies AG Power Field-Effect Transistor, 30A I(D), 55V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, LEAD FREE, PLASTIC, D2PAK-3 visit Digikey Buy
IRLZ34PBF Vishay Siliconix Power Field-Effect Transistor, 30A I(D), 60V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey Buy
IRLZ34STRL Vishay Siliconix MOSFET N-CH 60V 30A D2PAK visit Digikey Buy
IRLZ34STRR Vishay Siliconix MOSFET N-CH 60V 30A D2PAK visit Digikey Buy

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Part : IRLZ34NPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 1,829 Best Price : $0.57 Price Each : $1.3280
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IRLZ34 Datasheet

Part Manufacturer Description PDF Type
IRLZ34 Toshiba Power MOSFETs Cross Reference Guide Original
IRLZ34 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-220AB Original
IRLZ34 International Rectifier HEXFET Power MOSFET Scan
IRLZ34 International Rectifier HEXFET Power MOSFET Scan
IRLZ34 International Rectifier HEXFET Power MOSFET Scan
IRLZ34 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRLZ34 N/A FET Data Book Scan
IRLZ34 N/A Shortform Datasheet & Cross References Data Scan
IRLZ34 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRLZ34 Samsung Electronics N-Channel Logic Level MOSFET Scan
IRLZ34A Samsung Electronics Advanced Power MOSFET Scan
IRLZ34L International Rectifier HEXFET Power MOSFET Original
IRLZ34L International Rectifier HEXFET Power MOSFET Original
IRLZ34L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 60V 30A TO-262 Original
IRLZ34N International Rectifier HEXFET Power MOSFET Original
IRLZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Original
IRLZ34N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRLZ34N with Standard Packaging Original
IRLZ34N International Rectifier HEXFET Power MOSFET Original
IRLZ34N Philips Semiconductors N-channel enhancement mode Logic level TrenchMOS transistor Original
IRLZ34N Toshiba Power MOSFETs Cross Reference Guide Original
Showing first 20 results.

IRLZ34

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34 Vishay Siliconix
Original
HLZ34 2002/95/EC IRLZ34P HLZ34-E3 2011/65/EU
Abstract: N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix Fig. 5 - Typical Vishay Siliconix
Original
JS709A

IRLZ34

Abstract: SiHLZ34 TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , www.vishay.com 1 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , : 91327 S-Pending-Rev. A, 21-Jul-08 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRLZ34, SiHLZ34
Vishay Siliconix
Original

SiHLZ34

Abstract: IRLZ34 TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , apply Document Number: 91327 S09-0036-Rev. A, 19-Jan-09 www.vishay.com 1 IRLZ34, SiHLZ34 , S09-0036-Rev. A, 19-Jan-09 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRLZ34, SiHLZ34
Vishay Siliconix
Original

IRLZ30

Abstract: IRLZ34 IRLZ34/30 N-CHANNEL LOGIC LEVEL MOSFET FEATURES â'¢ Lower Rds(on) â'¢ Excellent voltage , TO-220 I.Gate 2. Drain 3. Source PRODUCT SUMMARY Part Number BVdss Ros(on) Id IRLZ34 60V 0.07Ã) 25A IRLZ30 50V 0.07n 25A ABSOLUTE MAXIMUM RATINGS Characteristic Symbol IRLZ34 IRLZ30 Unit , width limited by junction temperature ELECTRONICS 859 â  7^4142 00213^0 55à I IRLZ34/30 N-CHANNEL , Characteristic Min TVP Max Units Test Conditions BVdss Drain-Source Breakdown Voltage IRLZ34 IRLZ30 60 50 - - V
-
OCR Scan
IRLZ34/30
Abstract: N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix Fig. 5 - Typical Vishay Siliconix
Original
Abstract: industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , apply Document Number: 91327 S-Pending-Rev. A, 21-Jul-08 www.vishay.com 1 WORK-IN-PROGRESS IRLZ34 , Document Number: 91327 S-Pending-Rev. A, 21-Jul-08 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL , -Jul-08 www.vishay.com 3 IRLZ34, SiHLZ34 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Vishay Siliconix
Original
Abstract: MOSFET PD-9.558C IRLZ34 INTERNATIONAL R E C T I F I E R â'¢ Dynamic dv/dt Rating â , Typ. â'" 0.50 â'" Max. 1.7 â'" 62 Units °C/W â  IRLZ34 4655452 QQlbDOl , °C 1482 001fc.D02 2A3 m i H R IRLZ34 I« R bSE D â' D AT A SHEETS ta> Drain Current , . 1483 Normalized On-Resistance Vs. Temperature â  IRLZ34 MfiSSMSE DDlbOOB 11T M I N R , - â¡DlbOD4 05b INTERNATIONAL R E C T I F I E R INR b5E D IRLZ34 25 50 75 -
OCR Scan

k 1519

Abstract: IRLZ34 INFORMATION Package TO-220 IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 Lead (Pb)-free SnPb ABSOLUTE , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , : 91327 S10-1519-Rev. B, 19-Jul-10 www.vishay.com 1 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL , ; duty cycle 2 %. www.vishay.com 2 Document Number: 91327 S10-1519-Rev. B, 19-Jul-10 IRLZ34 , Normalized On-Resistance vs. Temperature www.vishay.com 3 IRLZ34, SiHLZ34 Vishay Siliconix Fig. 5
Vishay Siliconix
Original
k 1519 part marking ab

MOSFET N 30V 30A 252

Abstract: IRLZ34 Case-to-Sink, Flat, Greased Surface â'" 0.50 â'" RajA Junction-to-Ambient â'" â'" 62 1481 IRLZ34_ , International S Rectifier PD-9.558C IRLZ34 HEXFET® Power MOSFET Dynamic dv/dt Rating , Output Characteristics, Tc=25°C IRLZ34 Vqs, Draln-to-Source Voltage (volts) Fig 2. Typical Output , . Normalized On-Resistance Vs. Temperature 1483 IRLZ34 I«R (0 à cd & O Vgg = OV, f = 1MHz C1SS - cgs , \ \ Tc, Case Temperature (°C) Fig 9. Maximum Drain Current Vs. Case Temperature IRLZ34 -Vdd Fig 10a
-
OCR Scan
MOSFET N 30V 30A 252 558C T0-220
Abstract: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34 Vishay Siliconix
Original
Abstract: N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 , IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix Fig. 5 - Typical Vishay Siliconix
Original
Abstract: IRLZ34, SiHLZ34 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , acceptance throughout the industry. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220AB IRLZ34PbF SiHLZ34-E3 IRLZ34 SiHLZ34 ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER , www.vishay.com/doc?91000 IRLZ34, SiHLZ34 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum , THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRLZ34 Vishay Siliconix
Original

L285 SMD

Abstract: ic regulator 48v 30a international S Rectifier PD-9.558C IRLZ34 HEXFET® Power MOSFET Dynamic dv/dt Rating Logic-Levei , Junction-to-Ambient _ ._ . â'" â'" 62 1481 IRLZ34 IOR, Electrical Characteristics @ Tj = 25°C {unless , =285|iH Rg=25D, Ias=3'0A (See Figure 12) © Pulse width < 300 ¡us; duty cycle , . Normalized On-Resistance Vs. Temperature 1485 IRLZ34 XÃR io0 io1 Vos, Drain-to-Source Voitage (volts) Fig 5 , > \ \ \ \ \ \ \ 50 75 125 175 Te, Case Temperature (°G) Fig 9. Maximum Drain Current Vs. Case Temperature IRLZ34
-
OCR Scan
IRLZ34S L285 SMD ic regulator 48v 30a 1RLZ34 L285 AN-994 RLZ34S

icl7071

Abstract: LM317 IRL530 IRL630 IRL640 IRLZ34 IRLZ44 IRU1010 IRU1015 IRU1030 IRU1050 IRU1075 MIC39500 MIC2920 , IRFZ14 IRFZ24 IRFZ34 IRFZ44 IRL510 IRL520 IRL530 IRL630 IRL640 IRLZ34 IRLZ44 B1117 B1586
Bay Linear
Original
B1115 B2950 LM317 LM317L LM78XX TL494 icl7071 B1588 lm317 to92 ka3842 equivalent mc3842 AS1115 AS1117 AS1580 AS1581 AS1582 AS1583

IRLZ24

Abstract: IRLZ14 POWER MOSFETs LOGIC LEVEL SFET TO-220 N-CHANNEL BVdss(V) 50.00 FUNCTION GUIDE ID(on)(A) 8.00 15.00 25.00 35.00 50.00 8.00 15.00 25.00 35.00 50.00 4.80 7.90 13.00 24.00 4.80 7.90 13.00 24.00 2.00 4.00 8.00 16.00 2.00 4.00 8.00 16.00 RDS(on)( Q) 0.30 0.15 0.07 0.04 0.022 0.30 0.15 0.07 0.04 0.022 0.75 0.40 0.22 0.11 0.75 0.40 0.22 0.11 2.40 1.20 0.60 0.22 2.40 1.20 0.60 0.22 Part Number IRLZ10 IRLZ20 IRLZ30 IR LZ 40 SSP 50N 05L IRLZ14 IRLZ24 IRLZ34 IRLZ44 S SP50N 06L IRL511 IRL521 IRL531
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OCR Scan
50N05l IRL541 IRL540 IRL611 IRL621 IRL631 IRL641

IRFZ44 equivalent

Abstract: H-bridge irlZ44 inrush load such as large supply capacitors. In this example circuit, we have selected the IRLZ34 because of its low RDS(ON )(0.05 with VGS = 5V). The FET 6 RSEN 0.03 IRLZ34 LOAD GND 1155 , ) = 1.88V By consulting the power MOSFET data sheet SOA graph, we note that the IRLZ34 is capable of , RSEN 0.025 DS1 D1 1N4148 LTC1155 IRLZ34 G1 GND If the MOSFET is turned ON and the , + CS RSEN 0.025 RDLY VS IN1 CDLY DS1 LTC1155 GND G1 IRLZ34 L LOAD
Linear Technology
Original
74C14 IRFZ44 equivalent H-bridge irlZ44 IRLR034 1155I DIODE 1N4148 .07V ttl to cmos converter 1N4746A 1N4690A 1N5817 F-28115 LTC1153

MTP50N05E

Abstract: r1N4148 example circuit, we have selected the IRLZ34 because of its low RDSqn (0.05Q with VGS = 5V). The FET ITCl , SOA graph, we note that the IRLZ34 is capable of delivering 62.5A at a drain-to-source voltage of , zero. t r V 's OS1 â'" IN1 LTCH55 G1 cdly rdly H* rsen 0.025£1 irlz34 lLOAD gnd
-
OCR Scan
MTP50N05E r1N4148 marking TA1S transistor MTP50N05E SMP25N05 CTC115 1TC1155 CTX-7-52 110VAC RCS02 74HC02 6VT012V
Abstract: inrush load such as large supply capacitors. In this example circuit, we have selected the IRLZ34 because of its low RDS(ON )(0.05â"¦ with VGS = 5V). The FET 6 RSEN 0.03â"¦ IRLZ34 LOAD GND , )(RSEN) = 1.88V By consulting the power MOSFET data sheet SOA graph, we note that the IRLZ34 is , VS IN1 RSEN 0.025â"¦ DS1 D1 1N4148 LTC1155 IRLZ34 G1 GND If the MOSFET is , LTC1155 GND G1 IRLZ34 L LOAD GND 1155 F04 Figure 4. Switched Supply 8 The LTC1155 Linear Technology
Original
LT1161 LTC1163 LTC1255 LTC1477 LTC1623 LTC1710

T0-251

Abstract: T0251AA ) Notes Case Style irlz14 60 0.20 10 40 43 H5 (1) TO-220AB irlz24 0.10 17 68 60 irlz34 0.05 30 120 88
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OCR Scan
T0-251 T0251AA hexfets T0-252AA T0-251AA
Abstract: LTC1155 GND DS1 G1 IRLZ34 LOAD Figure 1. Adding an RC Delay 0.1V at 2A and, therefore , large supply capacitors. In this example circuit, we have selected the IRLZ34 because of its low RDS(ON , 1.88V By consulting the power MOSFET data sheet SOA graph, we note that the IRLZ34 is capable of , LTC1155 GND G1 RDLY 270k D1 1N4148 IRLZ34 RSEN 0.025 DS1 If the MOSFET is turned ON and the power , which are dominated by the controlled gate charge and discharge periods. 1155fb G1 IRLZ34 L Linear Technology
Original
LT1910

mosfet LT 438

Abstract: 9vt018v MOSFET. 30mU IRLZ34 Example Calculations Consider the circuit of Figure 1. A power MOSFET is , capacitors. In this example circuit, we have selected the IRLZ34 because of its low RDSqn (0.05Q with VGS = , n ) = 1.88V By consulting the power MOSFET data sheet SOA graph, we note that the IRLZ34 is
-
OCR Scan
mosfet LT 438 9vt018v xnor gate ttl 9vt016v fet JTW 6V DC motor
Showing first 20 results.