IRHM57064 IRHM53064 IRHM54064 IRHM58064 1000K MIL-STD-750 5M-1994 O-254AA - Datasheet Archive

 

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation

 

PD - 93792A RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-254AA) IRHM57064 IRHM57064 60V, N-CHANNEL R5 TECHNOLOGY Product Summary Part Number Radiation Level IRHM57064 IRHM57064 100K Rads (Si) IRHM53064 IRHM53064 300K Rads (Si) RDS(on) 0.012 0.012 ID 35A* 35A* IRHM54064 IRHM54064 600K Rads (Si) 0.012 35A* IRHM58064 IRHM58064 1000K 1000K Rads (Si) 0.013 35A* International Rectifier's R5TM technology provides high performance power MOSFETs for space applications. These devices have been characterized for Single Event Effects (SEE) with useful performance up to an LET of 80 (MeV/(mg/cm2). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-254AA Features: n n n n n n n n n n n Single Event Effect (SEE) Hardened Neutron Tolerant Identical Pre- and Post-Electrical Test Conditions Repetitive Avalanche Ratings Dynamic dv/dt Ratings Simple Drive Requirements Ease of Paralleling Hermatically Sealed Electically Isolated Ceramic Eyelets Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction Storage Temperature Range Lead Temperature Weight Units 35* 35* 140 250 2.0 ±20 500 35 25 4.8 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6 mm from case for10s ) 9.3 (Typical ) C g * Current is limited by internal wire diameter For footnotes refer to the last page www.irf.com 1 4/10/00 IRHM57064 IRHM57064 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Typ Max Units - - 0.063 - - 0.012 2.0 42 - - - - - - 4.0 - 10 25 - - - - - - - - - - Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance 60 - - - - - - - - - - 6.8 100 -100 140 40 40 35 125 60 50 - Test Conditions V VGS = 0V, ID = 1.0mA V/°C Reference to 25°C, I D = 1.0mA VGS = 12V, ID = 35A V S( ) nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 35A VDS= 48V ,VGS=0V VDS = 48V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 35A VDS = 50V ns VDD = 30V, ID = 35A RG = 2.35 BVDSS Drain-to-Source Breakdown Voltage BVDSS/TJ Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage g fs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA nA nH Measured from Drain lead (6mm /0.25in. from package) to Source lead (6mm /0.25in. from package) with Source wires internally bonded from Source Pin to Drain Pad Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance - - - 6300 2300 70 - - - pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM VSD t rr Q RR Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ton Forward Turn-On Time - - - - - - - - - - 35* 140 1.2 143 818 Test Conditions A V ns nC Tj = 25°C, IS = 35A, VGS = 0V Tj = 25°C, IF = 35A, di/dt 100A/µs VDD 25V Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. * Current is limited by internal wire diameter Thermal Resistance Parameter R thJC RthCS RthJA Junction-to-Case Case-to-Sink Junction-to-Ambient Min Typ Max Units - - - - 0.50 0.21 - - 48 Test Conditions °C/W Typical socket mount Note: Corresponding Spice and Saber models are available on the G&S Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics Pre-Irradiation IRHM57064 IRHM57064 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD Up to 600K Rads(Si)1 1000K 1000K Rads (Si)2 Units Min Max Min Max Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-254) Diode Forward Voltage Test Conditions 60 2.0 - - - - - 4.0 100 -100 10 0.0061 60 1.5 - - - - - 4.0 100 -100 10 0.0071 µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20 V VDS= 48V, VGS =0V VGS = 12V, ID =35A - 0.012 - 0.013 VGS = 12V, ID =35A - 1.2 1.2 V VGS = 0V, IS = 35A - V nA 1. Part numbers IRHM57064 IRHM57064, IRHM53064 IRHM53064 and IRHM54064 IRHM54064 2. Part number IRHM58064 IRHM58064 International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V @VGS=-15V @VGS=-20V 37.4 60 60 60 52 34 29.2 46 46 35 25 15 106 35 35 27 20 14 Energy (MeV) 300 300 2068 VDS Kr Xe Au LET MeV/(mg/cm2) 39.2 63.3 86.6 70 60 50 40 30 20 10 0 Kr Xe Au 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHM57064 IRHM57064 1000 Pre-Irradiation 1000 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V 100 100 10 5.0V 20µs PULSE WIDTH TJ = 25 °C 1 0.1 1 10 5.0V 10 R DS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) 2.0 TJ = 150 ° C TJ = 25 ° C 10 V DS = 25V 15 20µs PULSE WIDTH 7.0 8.0 9.0 10.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 1000 6.0 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 5.0 20µs PULSE WIDTH TJ = 150 °C 1 0.1 100 VDS , Drain-to-Source Voltage (V) 100 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP ID = 35A 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 8000 Ciss 6000 Coss 4000 2000 20 VGS , Gate-to-Source Voltage (V) 10000 IRHM57064 IRHM57064 ID = 35A VDS = 48V VDS = 30V VDS = 12V 16 12 8 4 Crss 0 1 10 FOR TEST CIRCUIT SEE FIGURE 13 0 100 0 40 VDS , Drain-to-Source Voltage (V) 120 160 Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 1000 1000 ISD , Reverse Drain Current (A) 80 QG , Total Gate Charge (nC) OPERATION IN THIS AREA LIMITED BY RDS(on) I D , Drain Current (A) 100 TJ = 150 ° C 100us 100 10 TJ = 25 ° C 1 V GS = 0 V 0.1 0.0 0.5 1.0 1.5 2.0 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 2.5 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 1 10ms 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHM57064 IRHM57064 Pre-Irradiation 120 RD VDS LIMITED BY PACKAGE VGS 100 D.U.T. I D , Drain Current (A) RG + -VDD 80 12V Pulse Width 1 µs Duty Factor 0.1 % 60 Fig 10a. Switching Time Test Circuit 40 VDS 20 90% 0 25 50 75 100 125 150 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 0.05 0.02 0.01 0.01 P DM SINGLE PULSE (THERMAL RESPONSE) t1 t2 0.001 0.00001 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation IRHM57064 IRHM57064 1 5V EAS , Single Pulse Avalanche Energy (mJ) 1250 TOP 1000 L VD S D .U .T. RG IA S 12V 20V D R IV E R + - VD D 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit A BOTTOM 750 500 250 0 25 V (B R )D S S ID 16A 22A 35A 50 75 100 125 150 Starting TJ , Junction Temperature ( ° C) tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current IAS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12V .2µF .3µF 12 V QGS QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com D.U.T. IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHM57064 IRHM57064 Pre-Irradiation Footnotes: Pulse width 300 µs; Duty Cycle 2% Total Dose Irradiation with VGS Bias. Repetitive Rating; Pulse width limited by maximum junction temperature. VDD = 25V, starting TJ = 25°C, L= 0.8 mH Peak IL = 35A, VGS = 12V ISD 35A, di/dt 265A/µs, VDD 60V, TJ 150°C 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750 MIL-STD-750, method 1019, condition A. Total Dose Irradiation with VDS Bias. 48 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions - TO-254AA 0.12 [.005] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 2 13.84 [.545] 13.59 [.535] 6.60 [.260] 6.32 [.249] 13.84 [.545] 13.59 [.535] 3.78 [.149] 3.53 [.139] 1.27 [.050] 1.02 [.040] A 31.40 [1.235] 30.35 [1.195] 0.12 [.005] 6.60 [.260] 6.32 [.249] 1.27 [.050] 1.02 [.040] A 22.73 [.895] 21.21 [.835] 20.32 [.800] 20.07 [.790] 17.40 [.685] 16.89 [.665] 1 3 2 13.84 [.545] 13.59 [.535] B R 1.52 [.060] 3 B 17.40 [.685] 16.89 [.665] 4.82 [.190] 3.81 [.150] 3X 1.14 [.045] 0.89 [.035] 3.81 [.150] 3.81 [.150] 3.81 [.150] 0.36 [.014] 2X NOT ES : 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994 5M-1994. B A 2X 4.06 [.160] 3.56 [.140] 3X 1.14 [.045] 0.89 [.035] 0.36 [.014] B A NOT ES : PIN AS S IGNMENT S 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 1 = DRAIN 2 = S OURCE 3. CONT ROLLING DIMENS ION: INCH. 3 = GAT E PIN AS S IGNMENT S 1. DIMENS IONING & T OLERANCING PER AS ME Y14.5M-1994 5M-1994. 1 = DRAIN 2. ALL DIMENS IONS ARE S HOWN IN MILLIMET ERS [INCHES ]. 2 = S OURCE 3. CONT ROLLING DIMENS ION: INCH. 3 = GAT E 4. CONF ORMS T O JEDEC OUT LINE T O-254AA O-254AA BEF ORE LEADF ORMING. 4. CONF ORMS T O JEDEC OUT LINE T O-254AA O-254AA. CAUTION BERYLLIA WARNING PER MIL-PRF-19500 MIL-PRF-19500 Packages containing beryllia shall not be ground, sandblasted, machined, or have other operations performed on them which will will produce beryllia or beryllium dust. Furthermore, beryllium oxide packages shall not be placed in acids that will produce fumes containing beryllium. 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