91863D IRHF7430SE JANSR2N7464T2 MIL-PRF-19500/675 MIL-STD-750

RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF7430SE JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 ® TM RAD

PD - 91863D 91863D RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39) IRHF7430SE IRHF7430SE JANSR2N7464T2 JANSR2N7464T2 500V, N-CHANNEL REF: MIL-PRF-19500/675 MIL-PRF-19500/675 ® TM RAD Hard HEXFET TECHNOLOGY Product Summary Part Number IRHF7430SE IRHF7430SE Radiation Level RDS(on) 100K Rads (Si) 1.77 ID QPL Part Number 2.5A JANSR2N7464T2 JANSR2N7464T2 International Rectifier's RADHardTM HEXFET® MOSFET technology provides high performance power MOSFETs for space applications. This technology has over a decade of proven performance and reliability in satellite applications. These devices have been characterized for both Total Dose and Single Event Effects (SEE). The combination of low RDS(on) and low gate charge reduces the power losses in switching applications such as DC to DC converters and motor control. These devices retain all of the well established advantages of MOSFETs such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. TO-39 Features: n n n n n n n n Single Event Effect (SEE) Hardened Ultra Low RDS(on) Low Total Gate Charge Neuton Tolerant Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight Absolute Maximum Ratings Pre-Irradiation Parameter ID @ VGS = 12V, TC = 25°C ID @ VGS = 12V, TC = 100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt Â Operating Junction Storage Temperature Range Lead Temperature Weight Units 2.5 1.6 10 25 0.2 ±20 154 2.5 2.5 8.0 -55 to 150 A W W/°C V mJ A mJ V/ns o 300 (0.063 in. (1.6mm) from case for 10 sec.) 0.98 (Typical) C g For footnotes refer to the last page www.irf.com 1 08/30/04 IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 Pre-Irradiation Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ Max Units Test Conditions 500 - - V VGS = 0V, ID = 1.0mA - 0.56 - V/°C Reference to 25°C, ID = 1.0mA - - 1.77 2.5 0.4 - - - - - - 4.5 - 50 250 V S( ) VGS = 12V, ID = 1.6A Ã BVDSS Drain-to-Source Breakdown Voltage BV DSS /T J Temperature Coefficient of Breakdown Voltage RDS(on) Static Drain-to-Source On-State Resistance VGS(th) Gate Threshold Voltage gfs Forward Transconductance IDSS Zero Gate Voltage Drain Current µA IGSS IGSS Qg Q gs Q gd td(on) tr td(off) tf LS + LD Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Total Gate Charge Gate-to-Source Charge Gate-to-Drain (`Miller') Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Inductance - - - - - - - - - - - - - - - - - - - 7.0 100 -100 30 8.0 18 35 60 65 52 - Ciss C oss C rss Input Capacitance Output Capacitance Reverse Transfer Capacitance - - - 620 148 52 - - - nA nC VDS = VGS, ID = 1.0mA VDS > 15V, IDS = 1.6A Ã VDS= 400V ,VGS=0V VDS = 400V, VGS = 0V, TJ = 125°C VGS = 20V VGS = -20V VGS =12V, ID = 2.5A VDS = 250V VDD = 250V, ID = 2.5A, VGS =12V, RG = 7.5 ns nH Measured from drain lead (6mm /0.25in. from package) to source lead (6mm / 0.25in. from package) pF VGS = 0V, VDS = 25V f = 1.0MHz Source-Drain Diode Ratings and Characteristics Parameter Min Typ Max Units IS ISM Continuous Source Current (Body Diode) Pulse Source Current (Body Diode) À - - - - 2.5 10 A VSD t rr Q RR Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge - - - - - - 1.2 400 2.2 V nS µC ton Forward Turn-On Time Test Conditions Tj = 25°C, IS = 2.5A, VGS = 0V Ã Tj = 25°C, IF = 2.5A, di/dt 100A/µs VDD 50V Ã Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD. Thermal Resistance Parameter RthJC RthJA Junction-to-Case Junction-to-Ambient Min Typ Max Units - - - - 5.0 175 °C/W Test Conditions Typical socket mount Note: Corresponding Spice and Saber models are available on International Rectifier Website. For footnotes refer to the last page 2 www.irf.com Radiation Characteristics IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability. The hardness assurance program at International Rectifier is comprised of two radiation environments. Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation ÄÅ Parameter BVDSS VGS(th) IGSS IGSS IDSS RDS(on) RDS(on) VSD 100K Rads (Si) Units Test Conditions Min 500 2.0 - - - Diode Forward Voltage - 4.5 100 -100 50 nA µA VGS = 0V, ID = 1.0mA VGS = VDS, ID = 1.0mA VGS = 20V VGS = -20V VDS= 400V, VGS=0V - 1.77 VGS = 12V, ID = 1.6A - 1.77 VGS = 12V, ID = 1.6A - Drain-to-Source Breakdown Voltage Gate Threshold Voltage Gate-to-Source Leakage Forward Gate-to-Source Leakage Reverse Zero Gate Voltage Drain Current Static Drain-to-Source On-State Resistance (TO-3) Static Drain-to-Source On-State Resistance (TO-39) Max 1.2 V VGS = 0V, ID = 2.5A V International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2. Table 2. Single Event Effect Safe Operating Area Ion Cu Br LET MeV/(mg/cm2) 28 38 VDS (V) Range (µm) @VGS=0V @VGS=-5V @VGS=-10V 43 375 375 375 39 350 350 350 Energy (MeV) 285 305 @VGS=-15V 375 325 @VGS=-20V 375 300 400 VDS 300 Cu 200 Br 100 0 0 -5 -10 -15 -20 VGS Fig a. Single Event Effect, Safe Operating Area For footnotes refer to the last page www.irf.com 3 IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 10 Pre-Irradiation 10 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) 1 0.1 5.0V 20µs PULSE WIDTH TJ = 25 °C 0.01 0.1 1 10 100 VDS , Drain-to-Source Voltage (V) 1 5.0V 0.1 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 150 ° C 1 TJ = 25 ° C V DS = 15 50V 20µs PULSE WIDTH 7 8 9 10 11 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics 4 10 100 Fig 2. Typical Output Characteristics 2.5 6 1 VDS , Drain-to-Source Voltage (V) 10 5 20µs PULSE WIDTH TJ = 150 °C 0.01 0.1 Fig 1. Typical Output Characteristics 0.1 VGS 15V 12V 10V 9.0V 8.0V 7.0V 6.0V BOTTOM 5.0V TOP TOP ID = 2.5A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 12V 0 20 40 60 80 100 120 140 160 TJ , Junction Temperature( °C) Fig 4. Normalized On-Resistance Vs. Temperature www.irf.com Pre-Irradiation VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd C, Capacitance (pF) 1000 Ciss 750 500 Coss Crss 250 0 1 10 20 VGS , Gate-to-Source Voltage (V) 1250 IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 16 8 4 VDS , Drain-to-Source Voltage (V) FOR TEST CIRCUIT SEE FIGURE 13 0 8 16 24 32 40 QG , Total Gate Charge (nC) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 10 OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 ° C ID , Drain Current (A) ISD , Reverse Drain Current (A) VDS = 400V VDS = 250V VDS = 100V 12 0 100 ID = 2.5A 2.6A 1 TJ = 25 ° C V GS = 0 V 0.1 0.4 0.6 0.8 1.0 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage www.irf.com 1.4 10 10us 100us 1 0.1 1ms TC = 25 ° C TJ = 150 ° C Single Pulse 10 10ms 100 1000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area 5 IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 Pre-Irradiation 3.0 VGS 2.5 I D , Drain Current (A) RD VDS RG D.U.T. + -VDD 2.0 VGS Pulse Width 1 µs Duty Factor 0.1 % 1.5 Fig 10a. Switching Time Test Circuit 1.0 VDS 0.5 0.0 90% 25 50 75 100 125 150 TC , Case Temperature ( °C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 10 D = 0.50 1 0.20 0.10 0.05 PDM 0.02 0.1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 6 www.irf.com Pre-Irradiation 15V L VDS D.U.T. RG VGS 20V IAS DRIVER + - VDD 0.01 tp Fig 12a. Unclamped Inductive Test Circuit A EAS , Single Pulse Avalanche Energy (mJ) IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 350 ID 1.1A 1.6A BOTTOM 2.5A TOP 300 250 200 150 100 50 0 25 50 75 100 125 Starting T , Junction Temperature( °C) J V(BR)DSS 150 tp Fig 12c. Maximum Avalanche Energy Vs. Drain Current I AS Current Regulator Same Type as D.U.T. Fig 12b. Unclamped Inductive Waveforms 50K QG 12 V QGS .3µF D.U.T. QGD + V - DS VGS VG 3mA Charge Fig 13a. Basic Gate Charge Waveform www.irf.com 12V .2µF IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 7 IRHF7430SE IRHF7430SE, JANSR2N7464T2 JANSR2N7464T2 Pre-Irradiation Footnotes: À Repetitive Rating; Pulse width limited by maximum junction temperature. Á VDD = 50V, starting TJ = 25°C, L= 49 mH Peak IL = 2.5A, VGS = 12V Â ISD 2.5A, di/dt 400A/µs, VDD 500V, TJ 150°C Ã Pulse width 300 µs; Duty Cycle 2% Ä Total Dose Irradiation with VGS Bias. 12 volt VGS applied and VDS = 0 during irradiation per MIL-STD-750 MIL-STD-750, method 1019, condition A. Å Total Dose Irradiation with VDS Bias. 400 volt VDS applied and VGS = 0 during irradiation per MlL-STD-750, method 1019, condition A. Case Outline and Dimensions - TO-205AF (Modified TO-39) LEGEND 1- SOURCE 2- GATE 3- DRAIN IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. Data and specifications subject to change without notice. 08/04 8 www.irf.com