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IRFZ44NLPBF Infineon Technologies AG Power Field-Effect Transistor, 49A I(D), 55V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN visit Digikey Buy

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Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.4399 Price Each : $0.4999
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : €0.4549 Price Each : €0.7969
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Allied Electronics & Automation Stock : 1 Best Price : $0.9980 Price Each : $1.6970
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 1,709 Best Price : $0.49 Price Each : $0.58
Part : IRFZ44NLPBF Supplier : International Rectifier Manufacturer : Rochester Electronics Stock : 250 Best Price : $0.78 Price Each : $0.78
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 263 Best Price : £0.58 Price Each : £0.77
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 239 Best Price : £0.58 Price Each : £1.11
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 183 Best Price : $0.68 Price Each : $1.03
Part : IRFZ44NLPBF Supplier : International Rectifier Manufacturer : ComSIT Stock : 200 Best Price : - Price Each : -
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 978 Best Price : $0.8602 Price Each : $0.8602
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 978 Best Price : $0.9185 Price Each : $0.9185
Part : IRFZ44NLPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : - Best Price : £0.8340 Price Each : £0.98
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IRFZ44NL Datasheet

Part Manufacturer Description PDF Type
IRFZ44NL International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ44NL with Standard Packaging Original
IRFZ44NL International Rectifier HEXFET Power MOSFET Original
IRFZ44NL International Rectifier HEXFET Power MOSFET Original
IRFZ44NL Toshiba Power MOSFETs Cross Reference Guide Original
IRFZ44NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ44NL with Lead Free Packaging Original
IRFZ44NLPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original

IRFZ44NL

Catalog Datasheet MFG & Type PDF Document Tags

AN-994

Abstract: IRFZ44NL (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET® Power MOSFET l Advanced HEXFET® Power MOSFETs from International , (IRFZ44NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings , . Units ­­­ ­­­ 1.5 40 °C/W 1 03/13/01 IRFZ44NS/IRFZ44NL Electrical Characteristics @ , IRFZ44NS/IRFZ44NL 1000 BO TTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I
International Rectifier
Original
AN-994 IRFZ44NS/IRFZ44NL
Abstract: IRFZ44NS IRFZ44NL TO-263 TO-262 l l l l l l Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching , mount application. The through-hole version (IRFZ44NL) is available for lowprofile applications. D , '" Junction-to-Case Junction-to-Ambient 1.5 40 °C/W www.kersemi.com IRFZ44NS/IRFZ44NL Electrical , 2014-8-30 2 www.kersemi.com IRFZ44NS/IRFZ44NL 1000 BO TTOM VGS 15V 10V 8.0V 7.0V 6.0V KERSEMI
Original
F530S

IRFZ44N

Abstract: AN-994 (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET® Power MOSFET l Advanced HEXFET® Power MOSFETs from International , (IRFZ44NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings , . Units ­­­ ­­­ 1.5 40 °C/W 1 03/13/01 IRFZ44NS/IRFZ44NL Electrical Characteristics @ , IRFZ44NS/IRFZ44NL 1000 BO TTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I
International Rectifier
Original
IRFZ44N
Abstract: (IRFZ44NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated Description IRFZ44NS IRFZ44NL l HEXFET® Power MOSFET l Advanced HEXFET® Power MOSFETs from International , (IRFZ44NL) is available for lowprofile applications. D 2 P ak T O -26 2 Absolute Maximum Ratings , . Max. Units â'"â'"â'" â'"â'"â'" 1.5 40 °C/W 1 03/13/01 IRFZ44NS/IRFZ44NL , IRFZ44NS/IRFZ44NL 1000 BO TTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I International Rectifier
Original

surface mount IRFZ44N

Abstract: AN-994 PD - 9.1315A IRFZ44NS/L HEXFET® Power MOSFET l l l l l l Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.022 G ID = 49A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely , up to 2.0W in a typical surface mount application. The through-hole version (IRFZ44NL) is available
International Rectifier
Original
surface mount IRFZ44N irfz44nsl IRFZ44N APPLICATION NOTE
Abstract: PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description HEXFET® Power MOSFET D VDSS = 55V RDS(on) = 0.0175! G Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced , through-hole version (IRFZ44NL) is available for lowprofile applications. D 2 Pak TO-262 Absolute International Rectifier
Original
IRFZ44NSP IRFZ44NLP IRFZ44NS/LP EIA-418

IRFZ44NSPBF

Abstract: IRF (10A) 55V PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area , through-hole version (IRFZ44NL) is available for lowprofile applications. D 2 Pak TO-262 Absolute
International Rectifier
Original
IRFZ44NSPBF IRF (10A) 55V 70aQ IRL3103L

IRF (10A) 55V

Abstract: AN-994 PD - 95124 l l l l l l l IRFZ44NSPbF IRFZ44NLPbF Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area , through-hole version (IRFZ44NL) is available for lowprofile applications. D 2 Pak TO-262 Absolute
International Rectifier
Original

irf510 switch

Abstract: IRFBA40N60C IRFZ44NL 91315 IRLZ44NL 91347 IRFZ46NL 91305 IRFZ48NL 91408 IRF1010NL 91372 L IRL3705NL 91502 IRF3205L
International Rectifier
Original
IRFBA40N60C irf510 switch IRL2505 IRF540NL IRF634L 800v irf IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 220TM

1RFZ44N

Abstract: TR C458 International IG R Rectifier · · · · · · Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated PD - 9.1315A IRFZ44NS/L HEXFET® Power MOSFET V dss = 55 V ^D S (o n ) = 0 . 0 2 2 0 Id = 49A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast
-
OCR Scan
1RFZ44N TR C458 1RFZ44 1RFZ44NL C-458

z44n

Abstract: International IQ R Rectifier · Advanced Process Technology · Surface Mount (IRFZ44NS) · Low-profilethrough-hole(IRFZ44NL) · 175°C Operating Temperature · Fast Switching · Fully Avalanche Rated Description F ifth G e n e ra tio n H E X F E T s fro m Inte rn a tio n al R e ctifie r u tiliz e a d v a n c e d p ro c e s s in g te c h n iq u e s to a c h ie v e e x tre m e ly low o n -re s ista n ce per silicon area. T h is be n efit, co m b in e d w ith th e fa s t sw itch in g sp eed and rug g e d ize d d e v
-
OCR Scan
z44n

IRF1010E

Abstract: irf 4110 Demand Outline Number Key Through-Hole Packages TO-262 N-Channel IRFZ24NL IRFZ34NL IRFZ44NL
International Rectifier
Original
IRF1010E irf 4110 irfbf30 irf7333 IRFPF50 IRF4905 equivalent IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLMS1902 IRF5305L

IRFP460Z

Abstract: IRF3205 application -263) & TO-262: Standard Gate IRFZ444NS IRFZ44NL IRF1312S IRFBC40L Total 143 150 202 133
International Rectifier
Original
IRFP460Z IRF3205 application IRF3205 equivalent irfp4004 power MOSFET IRFP460z IRF3808 equivalent HFA16TB120 C/15PSIG 20ETS12S 15ETS16 20ETS16 10TTS08

YTA630

Abstract: MTW14P20 International IG R Rectifier · · · · · · Advanced Process Technology Surface Mount (IRFZ44NS) Low-profile through-hole (IRFZ44NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated PD - 9.1315A IRFZ44NS/L HEXFET® Power MOSFET V dss = 55 V ^D S (o n ) = 0 . 0 2 2 0 Id = 49A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast
Toshiba
Original
YTA630 MTW14P20 BSS125 MTAJ30N06HD SMP60N06 replacement SMU10P05 2N7000 2N7002 2SJ377 2SJ378 2SJ380 2SJ401

IRU1239SC

Abstract: iru1239 -263) & TO-262: Standard Gate IRFZ444NS IRFZ44NL IRF1312S IRFBC40L Total 143 150 202 133
Shenzhen Shouhe Technology
Original
IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10