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IRFZ24V Datasheet

Part Manufacturer Description PDF Type
IRFZ24V International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; A IRFZ24V with Standard Packaging Original
IRFZ24V International Rectifier HEXFET Power MOSFET Original
IRFZ24VL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; A IRFZ24VL with Standard Packaging Original
IRFZ24VL International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original
IRFZ24VL International Rectifier HEXFET Power MOSFET Original
IRFZ24VLPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-262 package; Similar to IRFZ24VL with Lead Free Packaging Original
IRFZ24VLPBF International Rectifier Original
IRFZ24VPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB package; Similar to IRFZ24V with Lead Free Packaging Original
IRFZ24VPBF International Rectifier Original
IRFZ24VS International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; A IRFZ24VS with Standard Packaging Original
IRFZ24VS International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRFZ24VS International Rectifier HEXFET Power MOSFET Original
IRFZ24VSPBF International Rectifier 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package; Similar to IRFZ24VS with Lead Free Packaging Original
IRFZ24VSPBF International Rectifier Original

IRFZ24V

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , 1 3/16/01 IRFZ24V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS , 2 www.irf.com IRFZ24V 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V , On-Resistance Vs. Temperature 3 IRFZ24V VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = , , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ24V 20 VDS I D International Rectifier
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Abstract: PD - 94156 IRFZ24V HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , 1 3/16/01 IRFZ24V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS , 2 www.irf.com IRFZ24V 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V , On-Resistance Vs. Temperature 3 IRFZ24V VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED Crss = , , Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFZ24V 20 VDS I D International Rectifier
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Abstract: PD - 95524 IRFZ24VSPbF IRFZ24VLPbF l l l l l l l l Advanced Process Technology , mount application. The through-hole version (IRFZ24VL) is available for low-profile applications. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = , Mounted)* Typ. Max. Units ­­­ ­­­ 3.4 40 °C/W 1 7/16/04 IRFZ24VS/LPbF , outside rated limits. This is a calculated value limited to TJ = 175°C . Uses IRFZ24V data and test International Rectifier
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AN-994 IRL3103L IRFZ24VSP IRFZ24VLP IRFZ24VS/LP EIA-418
Abstract: PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process , ) is available for low-profile applications. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute , 02/14/02 IRFZ24VS/IRFZ24VL Electrical Characteristics @ TJ = 25°C (unless otherwise specified , . Normalized On-Resistance Vs. Temperature 3 IRFZ24VS/IRFZ24VL VGS = 0V, f = 1 MHZ Ciss = C + Cgd , . Maximum Safe Operating Area www.irf.com IRFZ24VS/IRFZ24VL 20 VDS I D , Drain Current (A International Rectifier
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IRFZ24VS/IRFZ24VL
Abstract: PD - 94182 IRFZ24VS IRFZ24VL HEXFET® Power MOSFET l l l l l l l Advanced Process , ) is available for low-profile applications. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute , 02/14/02 IRFZ24VS/IRFZ24VL Electrical Characteristics @ TJ = 25°C (unless otherwise specified , . Normalized On-Resistance Vs. Temperature 3 IRFZ24VS/IRFZ24VL VGS = 0V, f = 1 MHZ Ciss = C + Cgd , . Maximum Safe Operating Area www.irf.com IRFZ24VS/IRFZ24VL 20 VDS I D , Drain Current (A International Rectifier
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Abstract: PD - 95524 IRFZ24VSPbF IRFZ24VLPbF l l l l l l l l Advanced Process Technology , mount application. The through-hole version (IRFZ24VL) is available for low-profile applications. D2 Pak IRFZ24VS TO-262 IRFZ24VL Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = , Mounted)* Typ. Max. Units ­­­ ­­­ 3.4 40 °C/W 1 7/16/04 IRFZ24VS/LPbF , outside rated limits. This is a calculated value limited to TJ = 175°C . Uses IRFZ24V data and test International Rectifier
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Abstract: FQI20N06L FQP20N06L IRLZ34 IRFZ24V IRFZ24VS N Channel Product TO-220/TO-263 Package BVds Part -
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CEM3040 CEP50N06 CEP83A3 equivalent cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent 2928-8J CEM2082 CEM2108 CEM8206 CEM8207 CEM8208
Abstract: PD - 95623 IRFZ24VPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low , 62 °C/W 1 8/3/04 IRFZ24VPbF Electrical Characteristics @ TJ = 25°C (unless otherwise , 2 www.irf.com IRFZ24VPbF 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM , On-Resistance Vs. Temperature 3 IRFZ24VPbF VGS = 0V, f = 1 MHZ Ciss = C + Cgd, C gs ds SHORTED , IRFZ24VPbF 20 VDS ID , Drain Current (A) VGS 15 RD D.U.T. RG + -VDD V GS 10 STMicroelectronics
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IRF1830G IRF1830 transistor IRF1830G APM2054N equivalent apm2054n AP70N03S AO4405 AO4407 AO4408 AO4409 AO4410 AO4411
Abstract: PD - 95623 IRFZ24VPbF HEXFET® Power MOSFET Advanced Process Technology Ultra Low On-Resistance , www.irf.com 1 8/3/04 IRFZ24VPbF Electrical Characteristics @ TJ = 25°C (unless otherwise specified , a calculated value limited to TJ = 175°C . 2 www.irf.com IRFZ24VPbF 100 VGS 15V 10V 8.0V , . Temperature www.irf.com 3 IRFZ24VPbF 1000 20 VGS , Gate-to-Source Voltage (V) 800 VGS = , Area 4 www.irf.com IRFZ24VPbF 20 VDS VGS RD ID , Drain Current (A) 15 RG V GS Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10