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Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 503 Best Price : $0.3221 Price Each : $0.3261
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IRFU220N Datasheet

Part Manufacturer Description PDF Type
IRFU220N International Rectifier HEXFET Power Mosfet Original
IRFU220N International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU220N with Standard Packaging Original
IRFU220N International Rectifier Power MOSFET Original
IRFU220NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU220N with Lead Free Packaging Original
IRFU220NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package Original

IRFU220N

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ International Rectifier
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IRFU120 EIA-541 AN-994 IRF Power MOSFET code marking linear year date code DPAK marking code 300 IRFR220NP IRFU220NP IRFR/U220NP EIA-481
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ International Rectifier
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SMPS MOSFET IRF 320a mosfet wit frequency range IRF AN1001 irf 48v mosfet IRF 50A
Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM International Rectifier
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IRFR/U220N
Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = International Rectifier
Original
Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM International Rectifier
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Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = International Rectifier
Original
Abstract: IRFR220N IRFU220N D-Pak IRFR22ON I-Pak IRFU220N Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG KERSEMI
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Abstract: 0.8000 4.80 42.00 IRL3302* 20 0.0200 39.00 57.00 IRFU220N 200 0.8000 0.80 1.30 IRL3803* 30 0.0060 120.00 Allied Electronics Catalog
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IRF1010E irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFZ24N IRFIZ24N IRFD024 IRFI1310N IRFD014
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ International Rectifier
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4.5V TO 100V INPUT REGULATOR R120 U120
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ International Rectifier
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sit transistor power Diode 200V 10A IRF P CHANNEL MOSFET 10A 100V IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC International Rectifier
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Abstract: PD- 95063 SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET VDSS RDS(on) max (m) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l I-Pak D-Pak IRFR22ONPbF IRFU220NPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25 Shenzhen Shouhe Technology
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IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10
Abstract: IRFR220NTRPBF IRFS17N20DPBF IRFS38N20DPBF IRFU220NPBF IRFS31N20DPBF VGS (V) ±20 ±20 ±30 ±20 ±30 ±30 ±20 ±30 ID DigiKey Electronics Catalog
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schematic diagram atx Power supply 500w pioneer PAL 012A 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ International Rectifier
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MOSFET IRF 940 power MOSFET IRF data IRFR22ONP