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IRFU220NPBF Infineon Technologies AG Power Field-Effect Transistor, 5A I(D), 200V, 0.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 visit Digikey Buy

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Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 750 Best Price : €0.2349 Price Each : €0.3659
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 150 Best Price : $0.2156 Price Each : $0.2587
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,516 Best Price : $0.3359 Price Each : $0.7769
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 6,362 Best Price : $0.3250 Price Each : $0.4250
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 19 Best Price : $0.3958 Price Each : $0.7879
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 5,900 Best Price : $1.94 Price Each : $1.94
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 2,507 Best Price : $0.39 Price Each : $1.04
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 2,507 Best Price : £0.2920 Price Each : £0.8330
Part : IRFU220NPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 2,175 Best Price : $0.3294 Price Each : $0.35
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IRFU220N Datasheet

Part Manufacturer Description PDF Type
IRFU220N International Rectifier HEXFET Power Mosfet Original
IRFU220N International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU220N with Standard Packaging Original
IRFU220N International Rectifier Power MOSFET Original
IRFU220NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU220N with Lead Free Packaging Original
IRFU220NPBF International Rectifier 200V Single N-Channel HEXFET Power MOSFET in a I-Pak package Original

IRFU220N

Catalog Datasheet MFG & Type PDF Document Tags

IRF Power MOSFET code marking

Abstract: IRFR22ON PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @
International Rectifier
Original
IRFU120 EIA-541 AN-994 IRF Power MOSFET code marking R120 linear year date code IRFR220NP IRFU220NP IRFR/U220NP EIA-481

IRF Power MOSFET code marking

Abstract: SMPS MOSFET PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @
International Rectifier
Original
SMPS MOSFET IRF 320a mosfet wit frequency range IRF AN1001 irf 48v mosfet HEXFET POWER MOSFET IRF

IRFR220N

Abstract: IRF AN1001 PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM
International Rectifier
Original
IRFR/U220N
Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = International Rectifier
Original

IRFR220N

Abstract: AN1001 PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR220N I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM
International Rectifier
Original
Abstract: IRFR220N IRFU220N D-Pak IRFR22ON I-Pak IRFU220N Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG KERSEMI
Original
Abstract: PD- 94048 IRFR220N IRFU220N SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = International Rectifier
Original

irf1010e equivalent

Abstract: irfp250n equivalent 0.8000 4.80 42.00 IRL3302* 20 0.0200 39.00 57.00 IRFU220N 200 0.8000 0.80 1.30 IRL3803* 30 0.0060 120.00
Allied Electronics Catalog
Original
irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFZ24N IRFIZ24N IRFD024 IRF1010E IRFI1310N IRFD014

AN1001

Abstract: EIA-541 PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @
International Rectifier
Original
U120 4.5V TO 100V INPUT REGULATOR

sit transistor

Abstract: 4.5V TO 100V INPUT REGULATOR PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @
International Rectifier
Original
sit transistor IRF P CHANNEL MOSFET IRF P CHANNEL MOSFET 100v IRF P CHANNEL MOSFET 10A 100V power Diode 200V 10A
Abstract: PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (mâ"¦) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC International Rectifier
Original

IRU1239SC

Abstract: iru1239 PD- 95063 SMPS MOSFET Applications l High frequency DC-DC converters l Lead-Free IRFR220NPbF IRFU220NPbF HEXFET® Power MOSFET VDSS RDS(on) max (m) 200V 600 ID 5.0A Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current l I-Pak D-Pak IRFR22ONPbF IRFU220NPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25
Shenzhen Shouhe Technology
Original
IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 100MT160PAPBF 100MT160PA 100MT160PBPBF T85HFL60S05 T85HFL80S05 T90RIA10

schematic diagram atx Power supply 500w

Abstract: pioneer PAL 012A IRFR220NTRPBF IRFS17N20DPBF IRFS38N20DPBF IRFU220NPBF IRFS31N20DPBF VGS (V) ±20 ±20 ±30 ±20 ±30 ±30 ±20 ±30 ID
DigiKey Electronics Catalog
Original
schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon LN086WP38 LN11WP23 LN11CP23 LN11WP24 LN11WP34 LN11WP38

MOSFET IRF 940

Abstract: power MOSFET IRF data PD- 95063A IRFR220NPbF IRFU220NPbF SMPS MOSFET HEXFET® Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current VDSS RDS(on) max (m) ID 200V 5.0A 600 l D-Pak IRFR22ON I-Pak IRFU220N Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @
International Rectifier
Original
MOSFET IRF 940 power MOSFET IRF data IRFR22ONP