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IRFU024NPBF Infineon Technologies AG Power Field-Effect Transistor, 17A I(D), 55V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 visit Digikey Buy

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Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 2,604 Best Price : $0.3812 Price Each : $0.7972
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : 67,500 Best Price : - Price Each : -
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $0.2181 Price Each : $0.2430
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Newark element14 Stock : 1,914 Best Price : $0.30 Price Each : $0.92
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Future Electronics Stock : 1,730 Best Price : $0.2950 Price Each : $0.3850
Part : IRFU024N Supplier : International Rectifier Manufacturer : Bristol Electronics Stock : 920 Best Price : $0.2310 Price Each : $0.8250
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 498 Best Price : £0.25 Price Each : £0.36
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : RS Components Stock : 286 Best Price : £0.25 Price Each : £0.69
Part : IRFU024N Supplier : International Rectifier Manufacturer : ComSIT Stock : 596 Best Price : - Price Each : -
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : TME Electronic Components Stock : 1,719 Best Price : $0.2748 Price Each : $0.6308
Part : IRFU024NPBF Supplier : International Rectifier Manufacturer : Chip One Exchange Stock : 24,750 Best Price : - Price Each : -
Part : IRFU024N Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 3,811 Best Price : $1.31 Price Each : $1.82
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 769 Best Price : $0.3820 Price Each : $0.3820
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 1,954 Best Price : $0.2790 Price Each : $0.5460
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Chip1Stop Stock : 4,958 Best Price : $0.3380 Price Each : $1.38
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : element14 Asia-Pacific Stock : 3,668 Best Price : $0.38 Price Each : $1.16
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : Farnell element14 Stock : 1,914 Best Price : £0.2670 Price Each : £0.7050
Part : IRFU024NPBF Supplier : Infineon Technologies Manufacturer : New Advantage Stock : 3,450 Best Price : $0.31 Price Each : $0.35
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IRFU024N Datasheet

Part Manufacturer Description PDF Type
IRFU024N International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; A IRFU024N with Standard Packaging Original
IRFU024N International Rectifier HEXFET Power MOSFET Original
IRFU024N Toshiba Power MOSFETs Cross Reference Guide Original
IRFU024N International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - MOSFETs Scan
IRFU024N N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFU024NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package; Similar to IRFU024N with Lead Free Packaging Original
IRFU024NPBF International Rectifier 55V Single N-Channel HEXFET Power MOSFET in a I-Pak package Original

IRFU024N

Catalog Datasheet MFG & Type PDF Document Tags

irf1010e equivalent

Abstract: irfp250n equivalent 0.1000 19.00 68.00 IRFBC30* 600 2.2000 3.60 74.00 Type number (example: IRFR024N becomes IRFU024N). , IRFBG20* 1000 11.0000 1.40 54.00 Logic Level P-Channel IRFR024N 55 0.0750 16.00 38.00 IRFU024N 55 0.0750
Allied Electronics Catalog
Original
irf1010e equivalent irfp250n equivalent IRF744 equivalent IRFP260n equivalent IRF730A equivalent IRF9540N equivalent IRFZ24N IRFIZ24N IRFD024 IRF1010E IRFI1310N IRFD014

1RFU210

Abstract: 1RFU224 International IO R Rectifier V (BR)DSS HEXFE1® Power MOSFETs >D *D Drain-to-Source RDS(on) Continuous On-State Drain Current Breakdown Part Resistance Voltage 25°C Number (V) (A) (H Continuous Drain Current 100° (*) R0 Pd Max. Thermal Max. Power Resistance Dissipation (°C/W) (w j Case Demand Outline Number Key Fax Through-Hole Packages i.Pak N-Channel IRFU3303 IRFU024N IRFU4105 IRFUI205 IR F U I10 IRFU120N 1RFU39I0 1RFU210 IRFU220 IRFU214 1RFU224 IRFU310 IRFU320 IRFU420
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OCR Scan
irfuc20 RFUC20

fu110

Abstract: IRFU4105 IRFU014 IRFU024N IR FU110 IRFU120N IRFU210 IRFU220 IRFU214 IRFU224 IRFU310 IRFU320 IRFU420 IRFUC20
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OCR Scan
IRFI830G IRFI840G IRFIBC20G IRFIBC30G IRFIBC40G IRFIBE20G

IRFZ44N complementary

Abstract: IRFz44n equivalent IRFU1205 IRFR1205 IRFZ34N IRFZ34NS IRFU4105 IRFR4105 - IRFZ24N IRFU024N IRFR024N SMP15N05
Intersil
Original
IRFZ44N complementary IRFz44n equivalent IRF3710 equivalent HRF3205 equivalent IRF3205 equivalent IRFP064N LC-00005 LC-00011 HUF75531SK8 FD53580 HUF75542P3 HUF75542S3S

HRF3205 equivalent

Abstract: IRFP064N equivalent IRFR4105 D D D D D D E IRFZ24N IRFU024N IRFR024N SMP15N05 SMU15N05 SMD15N05 NDT3055
Intersil
Original
IRF3205 BUK7514-55 IRFP064N equivalent irf3205 ups HUF75337P3 equivalent IRFZ48N equivalent HUF75343P3 equivalent irfz34n equivalent LC00004 HUF75545P3 SUP75N08-10 HUF75545S3S HUF75645P3 HUF75645S3S

irf510 switch

Abstract: IRFBA40N60C IRL1104L IRL1004L 91644 Y Y L Y IRLU014N 7/98 10/99 IRFU024N 91336 L IRLU024N 91363 IRFU4105 91302 L
International Rectifier
Original
IRFBA40N60C irf510 switch IRL2505 IRF540NL IRF634L 800v irf IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 220TM

IRFR024N

Abstract: International IGR Rectifier · · · · · Surface Mount (IRFR024N) Straight Lead (IRFU024N) 150°C Operating Temperature Fast Switching Fully Avalanche Rated PD - 9.1336A IRFR/U024N HEXFET® Power MOSFET V dss = 55 V Rds(od) = 0.075Q lD = 16A Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design for which
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OCR Scan
C-383 C-384

irf 064

Abstract: irf 480 IRKT56/08 34.41 IRF — IRU1010-25CP 0.55 IRF 814 J310 0.33 ONS 847 IRFU024N 0.86 IRF 815 IRKT56/12 24.55
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Original
IRKT91/16 irf 064 irf 480 irf 814 IRF 544 irf 2248 IRF 534 IRFP044N IRFZ14S IRL2910S IRU1015-33CT IRFP048N IRU1015-CD

pcb layout for TO 252AA

Abstract: AN-994 Previous Datasheet Index Next Data Sheet PD - 9.1336 IRFR/U024N PRELIMINARY HEXFET® Power MOSFET Surface Mount (IRFR024N) Straight Lead (IRFU024N) 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS(on) = 0.075 ID = 16A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and
International Rectifier
Original
pcb layout for TO 252AA AN-994 IRFR120 irfr 120 IRFU120
Abstract: International I©R Rectifier · · · · · · Ultra Low O n-Resistance S urface M ount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully A valanche Rated PD- 9.1336A PRELIMINARY IR F R /U 0 2 4 N HEXFET® Power MOSFET V dss = 55V RüS(on) = 0.075Q lD = 1 7A(D Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching -
OCR Scan
EIA-481

sot23 BS170

Abstract: 2SK2671 IRFP350 16 400 0,3 190 T0247AC IRFU024N 16 55 0,075 38 T0251AA STP16NE06 16 60 0,08 60 T0220 STP16NF06
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OCR Scan
T0220AB IRFL014N P3NB60 VN66AFD IXTN79N20 IRF1405 sot23 BS170 2SK2671 rfp40n STP22NE10L BS107 BSS123 BS170 BSS138 BS108 BSN304

ixfh26n60q

Abstract: 2SK2333 T0252AA IRFU024N 55 16 0,075 38 T0251AA IRFZ24N 55 17 0,07 45 T0220AB IRFZ34N 55 26 0,04 56 T0220AB
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OCR Scan
P5NB80 IXTN21N100 ixfh26n60q 2SK2333 2SK2761 BUZ345 P9NB60 BSS89 SI4466DY SI4966DY SI9925DY SI9942DY 2SK1388 IRF7319

AN-994

Abstract: IRFR024N PD - 9.1336 IRFR/U024N PRELIMINARY HEXFET® Power MOSFET Surface Mount (IRFR024N) Straight Lead (IRFU024N) 150°C Operating Temperature Fast Switching Fully Avalanche Rated VDSS = 55V RDS(on) = 0.075 ID = 16A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power
International Rectifier
Original
U024N IRFRU024N

IRFR024N

Abstract: AN-994 PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.075 G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and
International Rectifier
Original
Abstract: PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.075â"¦ G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching International Rectifier
Original

AN-994

Abstract: IRFR024N PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.075 G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and
International Rectifier
Original
Abstract: IRFR/U024N I-P ak T O -25 1 A A D -P ak T O -2 52 A A l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated Description The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount KERSEMI
Original

irf*24n

Abstract: AN-994 PD- 9.1336A IRFR/U024N PRELIMINARY HEXFET® Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 55V RDS(on) = 0.075 G ID = 17A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and
International Rectifier
Original
irf*24n

IRF1010E

Abstract: irf 4110 IRFU024N IRFU4105 IRFU1205 IRFU110 IRFU120N IRFU3910 IRFU210 IRFU220 IRFU214 IRFU224 IRFU310
International Rectifier
Original
irf 4110 irfbf30 irf7333 IRFPF50 IRF4905 equivalent Irf520N IRLML2402 IRLML2803 IRLML6302 IRLML5103 IRLMS1902 IRF5305L

CEP83A3 equivalent

Abstract: CEP50N06 FDD107AN06LA0 CEU4060AL IRLR024N IRLU024N CED4060A CEU4060A IRFR024N IRFU024N HUF76407D3
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Original
CEM3040 CEP83A3 equivalent CEP50N06 cep83a3 CEF02N6A cep6355 FQPF8N60C equivalent 2928-8J CEM2082 CEM2108 CEM8206 CEM8207 CEM8208
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