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IRFU220BTU_AM002 Fairchild Semiconductor Corporation N-Channel BFET MOSFET, TO-251 (I-PAK) MOLDED, 3 LEAD OPTION AA, 5040/RAIL ri Buy

IRFU N-Channel Power MOSFETs

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: m H a r r is IRFR220/221/222 IRFR220/221/222 IRFU220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated , IRFR220 IRFR220, IRFR221 IRFR221, IRFR222 IRFR222, IRFU220 IRFU220, IRFU221 IRFU221 and IRFU 222 are advanced power M O S F E T s designed, tested , 4-565 N-CHANNEL POWER MOSFETs rC n gate ¡RFR220 RFR220. ¡R F R 2 2 1, IR F R 2 2 2 , IR F U 2 2 0 , transient thermal impedance, junction-to-case vs. pulse duration. 4-567 N-CHANNEL POWER MOSFETs IR , POWER MOSFETs ... OCR Scan
datasheet

5 pages,
176.07 Kb

RC 4565 IRFU IRF N-Channel Power MOSFETs ir 222 IFU221 FR 220 IRFU N-Channel Power MOSFETs IFU220 FR220 IRFR220/221/222 IRFU220/221/222 TEXT
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Abstract: , 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Jan ary 1998 u Features Description • 3.8A and , power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver­ tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and ... OCR Scan
datasheet

7 pages,
115.14 Kb

IRFR220 IRFR221 IRFR222 IRFU220 IRFU221 IRFU222 TEXT
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Abstract: m HARRIS August 1991 IR FR 120/1R 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs , power. These types can be operated directly from integrated circuits. The IRFU series is supplied in the , -252AA -252AA TOP VIEW XZn SOURCE D escription The IRFR120 IRFR120, IRFR121 IRFR121, IRFU120 IRFU120, IRFU121 IRFU121 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect ... OCR Scan
datasheet

5 pages,
172.53 Kb

irfu121 IRFU N-Channel Power MOSFETs IFU-121 Harris IRFR120 a 4556 IFU120 120/1R TEXT
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Abstract: Improved high tem perature reliability N-CHANNEL POWER MOSFETS D-PACK IRFR420/421 IRFR420/421 l-PACK PRODUCT SUMMARY Part Number IRFR 420/U 420/U 420 IR FR422/U422 FR422/U422 Vos 500V 500V Ros , IRFU420/422 IRFU420/422 ELECTRICAL CHARACTERISTICS Symbol B V dss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS 11. SQUARE W AVE PULSE DURATION (SECONDS) M axim , On-Re&istance Vs. Tem perature 323 ELECTRONICS IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS VûS ... OCR Scan
datasheet

5 pages,
187.2 Kb

U422 U420 FR 422 FR420 IRFR420/422 IRFU420/422 TEXT
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Abstract: VIEW > SOURCE A u g u st 1991 N-Channel Power MOSFETs Avalanche-Energy-Rated Features · 2.6A , IRFU322 IRFU322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of , , Rq = 25 n , Peak lL = 3 1 A. 4-571 N-CHANNEL POWER MOSFETs ALL fjA V Ds = 0.8 x M ax , power field-effect transistors designed for applications such as switching regulators, switching , high speed and low gate-drive power. These types can be operated directly from integrated circuits. The ... OCR Scan
datasheet

5 pages,
166.64 Kb

IFR321 ifu320 IRFR320/321/322 IRFU320/321/322 TEXT
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Abstract: ) (Amps) (Watts) 0.52 35 3.6 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps , 2.5 2.5 Case Style H2 SO-8 F-15 H EXFET sn-R Power MOSFETs Other Products from , H EXFET Power MOSFETs Surface Mount The new S O T-2 2 3 is capable of dissipating more than 1 , Style H4 D-Pak (TO-252AA) F-18 Other Products from IR H EXFET Power MOSFETs , -19 H EXFET S M D -2 2 0 Power MOSFETs Other Products from IR Surface Mount These devices ... OCR Scan
datasheet

18 pages,
613.65 Kb

H5 SMD irfcg40 IRFK20450 IRFC110 IRFC9140 IRFS30S IRFBg30 equivalent IRF9540 equivalent H1 SOT-89 irfbc10lc IRFBE30 equivalent IRFCG50 irf634 equivalent IRL1Z14G IRFC024 IRC540 equivalent irf7408 LL110 FL110 TEXT
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Abstract: lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to , PD - 91318B 91318B International IQ R Rectifier IR F R /U 1205 HEXFET® Power MOSFET • • • • • Ultra Low O n-R esistance Surface M ount (IRFR 1205) Straight Lead (IRFU 1205 , speed and ruggedized device design th a t H EX FET Pow er MOSFETs are well known for, provides the , 2 5 °C Power Dissipation Units A 107 W Linear Derating Factor 0.71 V gs G ... OCR Scan
datasheet

10 pages,
143.96 Kb

91318B TEXT
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Abstract: m HARRIS IRFR420/421/422 IRFR420/421/422 IRFU420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated , 60 mH, Rq = 25 0 , Peak k = 2.5 A. 4-581 N-CHANNEL POWER MOSFETs V os* 0 V, T j - 125aC , IRFU422 IRFU422 are advanced pow er MOSFETs designed, tested, and guaranteed to w ithstand a specified level of , gate power fie ld -e ffe c t transistors designed for applications such as sw itching regulators, sw , transistors requiring high speed and low ga te -d rive power. These types can be operated dire ctly from ... OCR Scan
datasheet

5 pages,
169.08 Kb

IRFU N-Channel Power MOSFETs IRFR421 IFR421 420 Diode IFU422 IRFR420/421/422 IRFU420/421/422 TEXT
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Abstract: (Inches) Case Style TO-2S1AA (IRFU Series) All Dimensions in Millimeters and (Inches) C-33 , advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest , the well established advantages of MOSFETs such as voltage control, very fast swit­ ching, ease of , °C Max. Power Dissipation 50 W Unaar Derating Factor 0.33 Vq s Gate-to-Source Voltage , information shown on the following graphs applies also to the IRFU devices. Fig. 1 — Typical Output ... OCR Scan
datasheet

8 pages,
222.81 Kb

TEXT
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Abstract: MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of , lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels , IRFR220 IRFR220, IRFU220 IRFU220, SiHFR220 SiHFR220, SiHFU220 SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C c dV/dt Peak Diode Recovery dV ... Original
datasheet

2 pages,
174.36 Kb

SiHFR220-E3 SiHFR220 IRFU220 IRFR220 SiHFU220 TEXT
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