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Part Manufacturer Description PDF Samples Ordering
ISL89410IBZ Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC ri Buy
ISL89410IBZ-T13 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R ri Buy
ISL89411IBZ-T13 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R ri Buy

IRFU N-Channel Power MOSFETs

Catalog Datasheet Results Type PDF Document Tags
Abstract: m H a r r is IRFR220/221/222 IRFR220/221/222 IRFU220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated , 4-565 N-CHANNEL POWER MOSFETs rC n gate ¡RFR220 RFR220. ¡R F R 2 2 1, IR F R 2 2 2 , IR F U 2 2 0 , transient thermal impedance, junction-to-case vs. pulse duration. 4-567 N-CHANNEL POWER MOSFETs IR , These are n-channel enhancement-mode silicon gate power field-effect transistors designed for , IRFR220 IRFR220, IRFR221 IRFR221, IRFR222 IRFR222, IRFU220 IRFU220, IRFU221 IRFU221 and IRFU 222 are advanced power M O S F E T s designed, tested ... OCR Scan
datasheet

5 pages,
176.07 Kb

IRFU FR 220 IRFU N-Channel Power MOSFETs IFU220 FR220 IRFR220/221/222 IRFU220/221/222 IRFR220/221/222 abstract
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Abstract: Improved high tem perature reliability N-CHANNEL POWER MOSFETS D-PACK IRFR420/421 IRFR420/421 l-PACK , IRFU420/422 IRFU420/422 ELECTRICAL CHARACTERISTICS Symbol B V dss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS 11. SQUARE W AVE PULSE DURATION (SECONDS) M axim , On-Re&istance Vs. Tem perature 323 ELECTRONICS IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS VûS , limited by max. junction temperature 321 ELECTRONICS IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER ... OCR Scan
datasheet

5 pages,
187.2 Kb

U422 U420 FR420 FR 422 IRFR420/422 IRFU420/422 IRFR420/422 abstract
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Abstract: m HARRIS August 1991 IR FR 120/1R 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs , avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect , N-CHANNEL POW ER MOSFETs X33 gate IR F R 120, IR F R 1 2 1, IR F U 120, IR F U 121 ELECTRICAL , -to -ca se vs. pulse duration. 4-557 N-CHANNEL POW ER MOSFETs (AMPERES) IR F R 120, IR F , power. These types can be operated directly from integrated circuits. The IRFU series is supplied in the ... OCR Scan
datasheet

5 pages,
172.53 Kb

irfu121 IFU-121 IFU120 120/1R 120/1R abstract
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Abstract: m HARRIS IRFR420/421/422 IRFR420/421/422 IRFU420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated , 60 mH, Rq = 25 0 , Peak k = 2.5 A. 4-581 N-CHANNEL POWER MOSFETs V os* 0 V, T j - 125aC , urce voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 4-583 N-CHANNEL POWER , IRFU422 IRFU422 are advanced pow er MOSFETs designed, tested, and guaranteed to w ithstand a specified level of , gate power fie ld -e ffe c t transistors designed for applications such as sw itching regulators, sw ... OCR Scan
datasheet

5 pages,
169.08 Kb

IRFR421 420 Diode IRFR420/421/422 IRFU420/421/422 IRFR420/421/422 abstract
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Abstract: VIEW > SOURCE A u g u st 1991 N-Channel Power MOSFETs Avalanche-Energy-Rated Features · 2.6A , , Rq = 25 n , Peak lL = 3 1 A. 4-571 N-CHANNEL POWER MOSFETs ALL fjA V Ds = 0.8 x M ax. , IRFU322 IRFU322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching ... OCR Scan
datasheet

5 pages,
166.64 Kb

ifu320 IRFR320/321/322 IRFU320/321/322 IRFR320/321/322 abstract
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Abstract: TO-220 Hexsense H9 TO-247 Hexsense H E X F E T Po w e r mosfets HEXDips HEXDIPS N-Channel " , Other Products from IR SOT-89 N-Channel V(BR ) q s s Drain-to-Source ROS(on) Part Breakdown , ) (Amps) (Watts) 0.52 35 3.6 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps , to the gate. SOT-89 Logic Level N-Channel V(BR)uss Drain-to-Source R OS(on) Breakdown Part , Level N-Channel V(BR) q s s Drain-to-Source n DS(on) Part Breakdown On-State Number Voltage Resistance ... OCR Scan
datasheet

18 pages,
613.65 Kb

irli530g IRFZ44 equivalent IRFPF40 IRFP240 equivalent LZ14S IRFK20450 IRFIP054 IRL3705 IRFC9140 irfcg40 irf634 equivalent IRFCG50 irfbc10lc IRL1Z14G datasheet abstract
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Abstract: modulates the gates of external N-channel power M OSFETs to regulate the motor current. The IC drives external PNP transistors or P-channel MOSFETs directly. Special circuits are used to save base drive power , external N-channel MOSFETs for PH1, PH2, PH3. Motor current sense input. Timing capacitor for fixed offtime , functions are also provided on chip. The M L4510 L4510 is designed to drive external power transistors (N-channel , of the 3 N-channel M OSFET's when O TA O U T is tied to O TA IN, or can modulate a single M OSFET ... OCR Scan
datasheet

9 pages,
253.05 Kb

L4510 5v dc motor 45 rpm ML4510 ML4510 abstract
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Abstract: DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast , (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. S N-Channel MOSFET ORDERING INFORMATION Package Lead , devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. , IRFR014 IRFR014, IRFU014 IRFU014, SiHFR014 SiHFR014, SiHFU014 SiHFU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
1747.22 Kb

IRFR014 IRFU014 SiHFR014 SiHFU014 IRFR014 abstract
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Abstract: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast , (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. S N-Channel MOSFET ORDERING INFORMATION Package Lead , level and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide , IRFR220 IRFR220, IRFU220 IRFU220, SiHFR220 SiHFR220, SiHFU220 SiHFU220 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
1426.2 Kb

IRFR220 IRFU220 SiHFR220 SiHFU220 IRFR220 abstract
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Abstract: (TO-251) G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best , version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. S N-Channel MOSFET ORDERING INFORMATION , and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing , IRLR014 IRLR014, IRLU014 IRLU014, SiHLR014 SiHLR014, SiHLU014 SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
2146.57 Kb

IRLR014 IRLU014 SiHLR014 SiHLU014 IRLR014 abstract
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