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Part Manufacturer Description Datasheet BUY
IRFUC20PBF Vishay Siliconix TRANSISTOR 2 A, 600 V, 4.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power visit Digikey
IRFU220PBF Vishay Siliconix TRANSISTOR 4.8 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power visit Digikey
IRFU110PBF Vishay Siliconix TRANSISTOR 4.3 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power visit Digikey
IRFU420PBF Vishay Siliconix TRANSISTOR 2.4 A, 500 V, 3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251, ROHS COMPLIANT, IPAK-3, FET General Purpose Power visit Digikey
IRFU7440PBF Infineon Technologies AG Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET visit Digikey
IRFU420APBF Vishay Siliconix Power Field-Effect Transistor, 3.3A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, ROHS COMPLIANT, IPAK-3 visit Digikey

IRFU N-Channel Power MOSFETs

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: m H a r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated , IRFR220, IRFR221, IRFR222, IRFU220, IRFU221 and IRFU 222 are advanced power M O S F E T s designed, tested , 4-565 N-CHANNEL POWER MOSFETs rC n gate ¡RFR220. ¡R F R 2 2 1, IR F R 2 2 2 , IR F U 2 2 0 , transient thermal impedance, junction-to-case vs. pulse duration. 4-567 N-CHANNEL POWER MOSFETs IR , POWER MOSFETs -
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IFU220 IFU221 FR220 FR 220 ir 222 IRF N-Channel Power MOSFETs IRF222 IRFU222 IRF220 IFR221
Abstract: , 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Jan ary 1998 u Features Description â'¢ 3.8A and , power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver­ tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and -
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TA9600 TB334 IFR220 IFR222 IFU222
Abstract: m HARRIS August 1991 IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs , power. These types can be operated directly from integrated circuits. The IRFU series is supplied in the , -252AA TOP VIEW XZn SOURCE D escription The IRFR120, IRFR121, IRFU120, IRFU121 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect -
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IFU120 a 4556 fr120 fu120 Harris IRFR120 IFU-121 IRF120 IFR121 IFU121 80URCE
Abstract: Improved high tem perature reliability N-CHANNEL POWER MOSFETS D-PACK IRFR420/421 l-PACK PRODUCT SUMMARY Part Number IRFR 420/U 420 IR FR422/U422 Vos 500V 500V Ros , IRFU420/422 ELECTRICAL CHARACTERISTICS Symbol B V dss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS 11. SQUARE W AVE PULSE DURATION (SECONDS) M axim , On-Re&istance Vs. Tem perature 323 ELECTRONICS IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS VûS -
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FR420 FR 422 FU420 U420 U422 IRFR420/U420 IRFR422/U422
Abstract: VIEW > SOURCE A u g u st 1991 N-Channel Power MOSFETs Avalanche-Energy-Rated Features · 2.6A , IRFU322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of , , Rq = 25 n , Peak lL = 3 1 A. 4-571 N-CHANNEL POWER MOSFETs ALL fjA V Ds = 0.8 x M ax , power field-effect transistors designed for applications such as switching regulators, switching , high speed and low gate-drive power. These types can be operated directly from integrated circuits. The -
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IFR321 ifu320 fu320 fr320 IRFR320/321/322 IRFU320/321/322 IRFR320 IRFR321 IRFR322 IRFU320
Abstract: ) (Amps) (Watts) 0.52 35 3.6 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps , 2.5 2.5 Case Style H2 SO-8 F-15 H EXFET sn-R Power MOSFETs Other Products from , H EXFET Power MOSFETs Surface Mount The new S O T-2 2 3 is capable of dissipating more than 1 , Style H4 D-Pak (TO-252AA) F-18 Other Products from IR H EXFET Power MOSFETs , -19 H EXFET S M D -2 2 0 Power MOSFETs Other Products from IR Surface Mount These devices -
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FL110 LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRF7201 IRFR9014 IRF9510 IRF9610 IRF9Z24 IRF9520
Abstract: lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to , PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET® Power MOSFET â'¢ â'¢ â'¢ â'¢ â'¢ Ultra Low O n-R esistance Surface M ount (IRFR 1205) Straight Lead (IRFU 1205 , speed and ruggedized device design th a t H EX FET Pow er MOSFETs are well known for, provides the , 2 5 °C Power Dissipation Units A 107 W Linear Derating Factor 0.71 V gs G -
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Fet irfz44n IRFR/U1205 EIA-481
Abstract: m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated , 60 mH, Rq = 25 0 , Peak k = 2.5 A. 4-581 N-CHANNEL POWER MOSFETs V os* 0 V, T j - 125aC , IRFU422 are advanced pow er MOSFETs designed, tested, and guaranteed to w ithstand a specified level of , gate power fie ld -e ffe c t transistors designed for applications such as sw itching regulators, sw , transistors requiring high speed and low ga te -d rive power. These types can be operated dire ctly from -
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IRFR421 IFR421 IFU422 IFU420 420 Diode IRFR420 IRFR422 IRFU420 IRFU421 IRF422
Abstract: (Inches) Case Style TO-2S1AA (IRFU Series) All Dimensions in Millimeters and (Inches) C-33 , advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest , the well established advantages of MOSFETs such as voltage control, very fast swit­ ching, ease of , °C Max. Power Dissipation 50 W Unaar Derating Factor 0.33 Vq s Gate-to-Source Voltage , information shown on the following graphs applies also to the IRFU devices. Fig. 1 â'" Typical Output -
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k 3525 MOSFET T-35-25 IRFU12 IRFR120TR
Abstract: MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of , lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels , IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C c dV/dt Peak Diode Recovery dV -
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SiHFR220-E3 HFR220 HFU220 IRFR220P HFR220-E3 IRFR220TRLP HFR220TL-E3
Abstract: switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the , . The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation , PD- 91335D IRLR/U2703 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive , Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse , ) EXAMPLE : THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO IRFU 120 International Rectifier
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IRLR2703 IRLU2703 AN-994 b965 IRL2703 EIA-541
Abstract: switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the , . The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation , PD- 91317C IRLR/U2705 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive , Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse , IRFU 120 9U ASSEMBLY LOT CODE www.irf.com FIRST PORTION OF PART NUMBER 1P SECOND International Rectifier
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IRLR2705 IRLU2705
Abstract: ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an , HEXFET® Power MOSFET Surface Mount (IRFR024N) Straight Lead (IRFU024N) 150°C Operating Temperature , mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are , Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche International Rectifier
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pcb layout for TO 252AA irfr 120 IRFZ24N IRFR/U024N
Abstract: speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer , (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are , PRELIMINARY IR F R /U 0 2 4 N HEXFET® Power MOSFET V dss = 55V RüS(on) = 0.075Q lD = 1 7A(D , Drain Current, \fe s@ 10V Pulsed Drain Current © © Power Dissipation Linear Derating Factor , INTERNATIONAL FIRST RECTIFIER LOGO IRFU OF PART NUMBER PORTIO N ASSEMBLY CODE IÖ R 1 20 , 9U 1P SEC O N D -
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Abstract: Available Available RoHS* COMPLIANT DESCRIPTION G D P-Channel MOSFET Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high , IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT , , infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole Vishay Siliconix
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SiHFR9220-E3 HFR9220 HFU9220 IRFR9220/S IRFUFU9220/S IRFR9220P HFR9220-E3
Abstract: 's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest , the well established advantages of MOSFETs such as voltage control, very fast switching, ease of , U U u ttlfc 0KKR£ snoot » qkaî 9K suvia uu â'¢ nu2 Case Style TO-251AA (IRFU Series) All , Pulsed Drain Current © 17 "a PD ® tO " 25°c Max. Power Dissipation 30 W Linear Derating Factor 0.20 , following graphs applies also to the IRFU devices. tu er Lü o. Hi er cc a 2 I . 10V / 5 -
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IRFU110 IRFU111 IRFR110 IRFR111 9524B FR110 ir IRFR11Q RFR111
Abstract: P-Channel MOSFET Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low , lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels , IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT , Power Dissipation TC = 25 °C PD TA = 25 °C Maximum Power Dissipation (PCB Mount)e c dV/dt Peak Vishay Siliconix
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IRFUFU9220 2002/95/EC IRFR9220TRLP HFR9220TL-E3 IRFR9220TRL HFR9220TL
Abstract: benefit, com bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs , Technology · Fast Switching · Fully Avalanche Rated Description IRLR/U3410 HEXFET® Power MOSFET Vdss = , soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute , s @ 10V Continuous Drain Current, \^ s @ 10V Pulsed Drain Current (D© Power Dissipation Linear -
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IRLU IRL530N IRLR3410 IRLU3410
Abstract: benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs , P D -9 .1 3 1 7 B International I©R Rectifier IRLR/U2705 PRELIMINARY HEXFET® Power , soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications , perating Junction and PD@ T c = 2 5 °C Tstg Power Dissipation A Peak Diode Recovery dv/dt  -
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Abstract: ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an , version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts , PD- TBD REVIEW ONLY IRLR/U014N HEXFET® Power MOSFET l l l l l l Logic-Level Gate , Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power , IRFU 120 9U ASSEMBLY LOT CODE www.irf.com FIRST PORTION OF PART NUMBER 1P SECOND International Rectifier
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IRLR024N IRLU024N irfu 210a IRF (10A) 55V irf 210a
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