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Part Manufacturer Description PDF Samples Ordering
ISL89411IBZ-T13 Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC T&R ri Buy
ISL89411IPZ Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-PDIP ri Buy
ISL89411IBZ Intersil Corporation High Speed, Dual Channel Power MOSFET Drivers; Temperature Range: -40°C to 85°C; Package: 8-SOIC ri Buy

IRFU N-Channel Power MOSFETs

Catalog Datasheet Results Type PDF Document Tags
Abstract: m H a r r is IRFR220/221/222 IRFR220/221/222 IRFU220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated , 4-565 N-CHANNEL POWER MOSFETs rC n gate ¡RFR220 RFR220. ¡R F R 2 2 1, IR F R 2 2 2 , IR F U 2 2 0 , transient thermal impedance, junction-to-case vs. pulse duration. 4-567 N-CHANNEL POWER MOSFETs IR , These are n-channel enhancement-mode silicon gate power field-effect transistors designed for , IRFR220 IRFR220, IRFR221 IRFR221, IRFR222 IRFR222, IRFU220 IRFU220, IRFU221 IRFU221 and IRFU 222 are advanced power M O S F E T s designed, tested ... OCR Scan
datasheet

5 pages,
176.07 Kb

IRFU N-Channel Power MOSFETs IRFU FR 220 IFU220 FR220 IRFR220/221/222 IRFU220/221/222 IRFR220/221/222 abstract
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Abstract: Improved high tem perature reliability N-CHANNEL POWER MOSFETS D-PACK IRFR420/421 IRFR420/421 l-PACK , IRFU420/422 IRFU420/422 ELECTRICAL CHARACTERISTICS Symbol B V dss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS 11. SQUARE W AVE PULSE DURATION (SECONDS) M axim , On-Re&istance Vs. Tem perature 323 ELECTRONICS IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER MOSFETS VûS , limited by max. junction temperature 321 ELECTRONICS IRFR420/422 IRFR420/422 IRFU420/422 IRFU420/422 N-CHANNEL POWER ... OCR Scan
datasheet

5 pages,
187.2 Kb

U422 FR420 FR 422 IRFR420/422 IRFU420/422 IRFR420/422 abstract
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Abstract: m HARRIS August 1991 IR FR 120/1R 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs , avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect , N-CHANNEL POW ER MOSFETs X33 gate IR F R 120, IR F R 1 2 1, IR F U 120, IR F U 121 ELECTRICAL , -to -ca se vs. pulse duration. 4-557 N-CHANNEL POW ER MOSFETs (AMPERES) IR F R 120, IR F , power. These types can be operated directly from integrated circuits. The IRFU series is supplied in the ... OCR Scan
datasheet

5 pages,
172.53 Kb

irfu121 IFU-121 IFU120 120/1R 120/1R abstract
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Abstract: m HARRIS IRFR420/421/422 IRFR420/421/422 IRFU420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated , 60 mH, Rq = 25 0 , Peak k = 2.5 A. 4-581 N-CHANNEL POWER MOSFETs V os* 0 V, T j - 125aC , urce voltage. Fig. 11 - Typical gate charge vs. gate-to-source voltage. 4-583 N-CHANNEL POWER , IRFU422 IRFU422 are advanced pow er MOSFETs designed, tested, and guaranteed to w ithstand a specified level of , gate power fie ld -e ffe c t transistors designed for applications such as sw itching regulators, sw ... OCR Scan
datasheet

5 pages,
169.08 Kb

IRFR421 420 Diode IRFR420/421/422 IRFU420/421/422 IRFR420/421/422 abstract
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Abstract: VIEW > SOURCE A u g u st 1991 N-Channel Power MOSFETs Avalanche-Energy-Rated Features · 2.6A , , Rq = 25 n , Peak lL = 3 1 A. 4-571 N-CHANNEL POWER MOSFETs ALL fjA V Ds = 0.8 x M ax. , IRFU322 IRFU322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect transistors designed for applications such as switching regulators, switching ... OCR Scan
datasheet

5 pages,
166.64 Kb

ifu320 IRFR320/321/322 IRFU320/321/322 IRFR320/321/322 abstract
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Abstract: TO-220 Hexsense H9 TO-247 Hexsense H E X F E T Po w e r mosfets HEXDips HEXDIPS N-Channel " , Other Products from IR SOT-89 N-Channel V(BR ) q s s Drain-to-Source ROS(on) Part Breakdown , ) (Amps) (Watts) 0.52 35 3.6 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps , to the gate. SOT-89 Logic Level N-Channel V(BR)uss Drain-to-Source R OS(on) Breakdown Part , Level N-Channel V(BR) q s s Drain-to-Source n DS(on) Part Breakdown On-State Number Voltage Resistance ... OCR Scan
datasheet

18 pages,
613.65 Kb

D44 SO-8 IRL3705 irli530g IRFPF40 IRFP240 equivalent IRFK20450 IRFIP054 irfdc10 IRFZ44 equivalent IRFC9140 irf634 equivalent irfcg40 IRFCG50 IRL1Z14G datasheet abstract
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Abstract: modulates the gates of external N-channel power M OSFETs to regulate the motor current. The IC drives external PNP transistors or P-channel MOSFETs directly. Special circuits are used to save base drive power , external N-channel MOSFETs for PH1, PH2, PH3. Motor current sense input. Timing capacitor for fixed offtime , functions are also provided on chip. The M L4510 L4510 is designed to drive external power transistors (N-channel , of the 3 N-channel M OSFET's when O TA O U T is tied to O TA IN, or can modulate a single M OSFET ... OCR Scan
datasheet

9 pages,
253.05 Kb

L4510 5v dc motor 45 rpm ML4510 ML4510 abstract
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Abstract: DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast , (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. S N-Channel MOSFET ORDERING INFORMATION Package Lead , devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. , IRFR014 IRFR014, IRFU014 IRFU014, SiHFR014 SiHFR014, SiHFU014 SiHFU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
1747.22 Kb

IRFR014 IRFU014 SiHFR014 SiHFU014 IRFR014 abstract
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Abstract: Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast , (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surcace mount applications. S N-Channel MOSFET ORDERING INFORMATION Package Lead , level and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide , IRFR220 IRFR220, IRFU220 IRFU220, SiHFR220 SiHFR220, SiHFU220 SiHFU220 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
1426.2 Kb

IRFR220 IRFU220 SiHFR220 SiHFU220 IRFR220 abstract
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Abstract: (TO-251) G DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best , version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. S N-Channel MOSFET ORDERING INFORMATION , and 3 V drive devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing , IRLR014 IRLR014, IRLU014 IRLU014, SiHLR014 SiHLR014, SiHLU014 SiHLU014 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V ... Original
datasheet

8 pages,
2146.57 Kb

IRLR014 IRLU014 SiHLR014 SiHLU014 IRLR014 abstract
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