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POWEREST Texas Instruments Power Estimation Tool (PET) visit Texas Instruments
TPIC2601KTD Texas Instruments 2A, 60V, 0.3ohm, 6 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
TPIC2701MJ Texas Instruments 0.5A, 60V, 0.8ohm, 7 CHANNEL, N-CHANNEL, Si, POWER, MOSFET visit Texas Instruments
CSD25302Q2 Texas Instruments P-Channel NexFET™ Power MOSFET 6-WSON -55 to 150 visit Texas Instruments
CSD22205L Texas Instruments -8V P-Channel NexFET™ Power MOSFET 4-PICOSTAR -55 to 150 visit Texas Instruments
CSD25201W15 Texas Instruments P-Channel NexFET™ Power MOSFET 9-DSBGA -55 to 150 visit Texas Instruments

IRFU N-Channel Power MOSFETs

Catalog Datasheet MFG & Type PDF Document Tags

FR220

Abstract: IFU220 m H a r r is IRFR220/221/222 IRFU220/221/222 N-Channel Power MOSFETs Avalanche-Energy-Rated , IRFR220, IRFR221, IRFR222, IRFU220, IRFU221 and IRFU 222 are advanced power M O S F E T s designed, tested , 4-565 N-CHANNEL POWER MOSFETs rC n gate ¡RFR220. ¡R F R 2 2 1, IR F R 2 2 2 , IR F U 2 2 0 , transient thermal impedance, junction-to-case vs. pulse duration. 4-567 N-CHANNEL POWER MOSFETs IR , POWER MOSFETs
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OCR Scan
IFU220 IFU221 FR220 IRFU N-Channel Power MOSFETs FR 220 IRF N-Channel Power MOSFETs IRF222 IRFU222 IRF220 IFR221
Abstract: , 0.8 and 1.2 Ohm, N-Channel Power MOSFETs Jan ary 1998 u Features Description â'¢ 3.8A and , power field effect transistors. They are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching conver­ tors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and -
OCR Scan
TA9600 TB334 IFR220 IFR222 IFU222

IFU120

Abstract: fu120 m HARRIS August 1991 IR FR 120/1R F R 121 IR F U 1 2 0 /IR F U 1 2 1 N-Channel Power MOSFETs , power. These types can be operated directly from integrated circuits. The IRFU series is supplied in the , -252AA TOP VIEW XZn SOURCE D escription The IRFR120, IRFR121, IRFU120, IRFU121 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. These are n-channel enhancement-mode silicon gate power field-effect
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OCR Scan
IFU120 fu120 IFU-121 fr120 a 4556 Harris IRFR120 IRF120 IFR121 IFU121 80URCE

FR420

Abstract: FR 422 Improved high tem perature reliability N-CHANNEL POWER MOSFETS D-PACK IRFR420/421 l-PACK PRODUCT SUMMARY Part Number IRFR 420/U 420 IR FR422/U422 Vos 500V 500V Ros , IRFU420/422 ELECTRICAL CHARACTERISTICS Symbol B V dss N-CHANNEL POWER MOSFETS (T c = 2 5 °C unless , IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS 11. SQUARE W AVE PULSE DURATION (SECONDS) M axim , On-Re&istance Vs. Tem perature 323 ELECTRONICS IRFR420/422 IRFU420/422 N-CHANNEL POWER MOSFETS VûS
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FR420 FR 422 U420 FU420 U422 IRFR420/U420 IRFR422/U422

ifu320

Abstract: fu320 VIEW > SOURCE A u g u st 1991 N-Channel Power MOSFETs Avalanche-Energy-Rated Features · 2.6A , IRFU322 are advanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of , , Rq = 25 n , Peak lL = 3 1 A. 4-571 N-CHANNEL POWER MOSFETs ALL fjA V Ds = 0.8 x M ax , power field-effect transistors designed for applications such as switching regulators, switching , high speed and low gate-drive power. These types can be operated directly from integrated circuits. The
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IFR321 ifu320 fu320 fr320 IRFR320/321/322 IRFU320/321/322 IRFR320 IRFR321 IRFR322 IRFU320

FL110

Abstract: LL110 ) (Amps) (Watts) 0.52 35 3.6 Power MOSFETs Surface Mount Iq Continuous Drain Current 25°C (Amps , 2.5 2.5 Case Style H2 SO-8 F-15 H EXFET sn-R Power MOSFETs Other Products from , H EXFET Power MOSFETs Surface Mount The new S O T-2 2 3 is capable of dissipating more than 1 , Style H4 D-Pak (TO-252AA) F-18 Other Products from IR H EXFET Power MOSFETs , -19 H EXFET S M D -2 2 0 Power MOSFETs Other Products from IR Surface Mount These devices
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OCR Scan
FL110 LL110 irf7408 IRC540 equivalent lr014 IRL1Z14G IRF7201 IRFR9014 IRF9510 IRF9610 IRF9Z24 IRF9520

Fet irfz44n

Abstract: lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to , PD - 91318B International IQ R Rectifier IR F R /U 1205 HEXFET® Power MOSFET â'¢ â'¢ â'¢ â'¢ â'¢ Ultra Low O n-R esistance Surface M ount (IRFR 1205) Straight Lead (IRFU 1205 , speed and ruggedized device design th a t H EX FET Pow er MOSFETs are well known for, provides the , 2 5 °C Power Dissipation Units A 107 W Linear Derating Factor 0.71 V gs G
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OCR Scan
Fet irfz44n IRFR/U1205 EIA-481

IFU422

Abstract: FU420 m HARRIS IRFR420/421/422 IRFU420/421/422 N-Channel Power MOSFETs Avalanche-Energy-Rated , 60 mH, Rq = 25 0 , Peak k = 2.5 A. 4-581 N-CHANNEL POWER MOSFETs V os* 0 V, T j - 125aC , IRFU422 are advanced pow er MOSFETs designed, tested, and guaranteed to w ithstand a specified level of , gate power fie ld -e ffe c t transistors designed for applications such as sw itching regulators, sw , transistors requiring high speed and low ga te -d rive power. These types can be operated dire ctly from
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OCR Scan
IRFR421 IFR421 IFU422 IFU420 420 Diode IRFR420 IRFR422 IRFU420 IRFU421 IRF422

k 3525 MOSFET

Abstract: (Inches) Case Style TO-2S1AA (IRFU Series) All Dimensions in Millimeters and (Inches) C-33 , advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest , the well established advantages of MOSFETs such as voltage control, very fast swit­ ching, ease of , °C Max. Power Dissipation 50 W Unaar Derating Factor 0.33 Vq s Gate-to-Source Voltage , information shown on the following graphs applies also to the IRFU devices. Fig. 1 â'" Typical Output
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k 3525 MOSFET T-35-25 IRFU12 IRFR120TR

IRFR220

Abstract: IRFU220 MOSFET Third generation Power MOSFETs from Vishay provide the designer with the best combination of , lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels , IRFR220, IRFU220, SiHFR220, SiHFU220 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY , Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C c dV/dt Peak Diode Recovery dV
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SiHFR220-E3 HFR220 HFU220 IRFR220P HFR220-E3 IRFR220TRLP HFR220TL-E3

AN-994

Abstract: IRFR120 switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the , . The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation , PD- 91335D IRLR/U2703 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive , Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse , ) EXAMPLE : THIS IS AN IRFU120 WITH ASSEMBLY LOT CODE 9U1P INTERNATIONAL RECTIFIER LOGO IRFU 120
International Rectifier
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IRLR2703 IRLU2703 AN-994 IRL2703 b965 EIA-541
Abstract: switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the , . The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation , PD- 91317C IRLR/U2705 HEXFET® Power MOSFET l l l l l l l Logic-Level Gate Drive , Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse , IRFU 120 9U ASSEMBLY LOT CODE www.irf.com FIRST PORTION OF PART NUMBER 1P SECOND International Rectifier
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IRLR2705 IRLU2705

pcb layout for TO 252AA

Abstract: AN-994 ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an , HEXFET® Power MOSFET Surface Mount (IRFR024N) Straight Lead (IRFU024N) 150°C Operating Temperature , mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are , Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche
International Rectifier
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pcb layout for TO 252AA IRFZ24N irfr 120 IRFR/U024N
Abstract: speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer , (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are , PRELIMINARY IR F R /U 0 2 4 N HEXFET® Power MOSFET V dss = 55V RüS(on) = 0.075Q lD = 1 7A(D , Drain Current, \fe s@ 10V Pulsed Drain Current © © Power Dissipation Linear Derating Factor , INTERNATIONAL FIRST RECTIFIER LOGO IRFU OF PART NUMBER PORTIO N ASSEMBLY CODE IÖ R 1 20 , 9U 1P SEC O N D -
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IRFR9220

Abstract: irfu9220 Available Available RoHS* COMPLIANT DESCRIPTION G D P-Channel MOSFET Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high , IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT , , infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole
Vishay Siliconix
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SiHFR9220-E3 HFR9220 HFU9220 IRFR9220/S IRFUFU9220/S IRFR9220P HFR9220-E3

k 3525 MOSFET

Abstract: IRFR110 's advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest , the well established advantages of MOSFETs such as voltage control, very fast switching, ease of , U U u ttlfc 0KKR£ snoot » qkaî 9K suvia uu â'¢ nu2 Case Style TO-251AA (IRFU Series) All , Pulsed Drain Current © 17 "a PD ® tO " 25°c Max. Power Dissipation 30 W Linear Derating Factor 0.20 , following graphs applies also to the IRFU devices. tu er Lü o. Hi er cc a 2 I . 10V / 5Â
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IRFU110 IRFU111 IRFR110 IRFR111 9524B FR110 ir 47AK DD10A IRFR11Q RFR111

IRFR9220

Abstract: SiHFU9220 P-Channel MOSFET Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low , lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels , IRFR9220, IRFU9220, SiHFR9220, SiHFU9220 Vishay Siliconix Power MOSFET FEATURES PRODUCT , Power Dissipation TC = 25 °C PD TA = 25 °C Maximum Power Dissipation (PCB Mount)e c dV/dt Peak
Vishay Siliconix
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IRFUFU9220 2002/95/EC IRFR9220TRLP HFR9220TL-E3 IRFR9220TRL HFR9220TL

IRLU

Abstract: IRL530N benefit, com bined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs , Technology · Fast Switching · Fully Avalanche Rated Description IRLR/U3410 HEXFET® Power MOSFET Vdss = , soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications. Absolute , s @ 10V Continuous Drain Current, \^ s @ 10V Pulsed Drain Current (D© Power Dissipation Linear
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IRLU IRL530N IRLR3410 IRLU3410
Abstract: benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs , P D -9 .1 3 1 7 B International I©R Rectifier IRLR/U2705 PRELIMINARY HEXFET® Power , soldering techniques. The straight lead version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications , perating Junction and PD@ T c = 2 5 °C Tstg Power Dissipation A Peak Diode Recovery dv/dt  -
OCR Scan

irfu 210a

Abstract: b965 ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an , version (IRFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 watts , PD- TBD REVIEW ONLY IRLR/U014N HEXFET® Power MOSFET l l l l l l Logic-Level Gate , Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power , IRFU 120 9U ASSEMBLY LOT CODE www.irf.com FIRST PORTION OF PART NUMBER 1P SECOND
International Rectifier
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IRLR024N IRLU024N irfu 210a IRF (10A) 55V irf 210a
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