91847B IRFSL11N50A - Datasheet Archive

 

IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling

 

PD- 91847B 91847B IRFSL11N50A IRFSL11N50A HEXFET® Power MOSFET l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleling Simple Drive Requirements D VDSS = 500V RDS(on) = 0.55 G ID = 11A S Description Third Generation HEXFET® Power MOSFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. TO-262 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS EAS IAR EAR dv/dt TJ TSTG Max. Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds 11 7.8 44 190 1.3 ± 30 390 11 19 4.1 -55 to + 175 Units A W W/°C V mJ A mJ V/ns °C 300 (1.6mm from case ) Thermal Resistance Parameter RJC RJA www.irf.com Junction-to-Case Junction-to-Ambient Typ. Max. Units ­­­ ­­­ 0.75 40 °C 1 2/7/2000 IRFSL11N50A IRFSL11N50A Electrical Characteristics @ TJ = 25°C (unless otherwise specified) RDS(on) VGS(th) gfs Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Qg Qgs Qgd td(on) tr td(off) tf Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Min. 500 ­­­ ­­­ 2.0 6.0 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ Typ. ­­­ 0.57 ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 14 34 32 27 IDSS Drain-to-Source Leakage Current LD Internal Drain Inductance ­­­ 4.5 LS Internal Source Inductance ­­­ 7.5 Ciss Coss Crss Coss Coss Coss eff. Input Capacitance Output Capacitance Reverse Transfer Capacitance Output Capacitance Output Capacitance Effective Output Capacitance ­­­ ­­­ ­­­ ­­­ ­­­ ­­­ 1426 208 9.6 1954 53 110 V(BR)DSS V(BR)DSS/TJ IGSS Max. Units Conditions ­­­ V VGS = 0V, ID = 250µA ­­­ V/°C Reference to 25°C, ID = 1mA 0.55 VGS = 10V, ID = 6.6A 4.0 V VDS = VGS, ID = 250µA ­­­ S VDS = 50V, ID = 6.6A 25 VDS = 500V, VGS = 0V µA 250 VDS = 400V, VGS = 0V, TJ = 150°C 100 VGS = 30V nA -100 VGS = -30V 51 ID = 11A 12 nC VDS = 400V 23 VGS = 10V, See Fig. 6 and 13 ­­­ VDD = 250V ­­­ ID = 11A ns ­­­ RG = 9.1 ­­­ RD = 22,See Fig. 10 D Between lead, ­­­ 6mm (0.25in.) nH G from package ­­­ and center of die contact S ­­­ VGS = 0V ­­­ VDS = 25V ­­­ pF = 1.0MHz, See Fig. 5 ­­­ VGS = 0V, VDS = 1.0V, = 1.0MHz ­­­ VGS = 0V, VDS = 400V, = 1.0MHz ­­­ VGS = 0V, VDS = 0V to 400V Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr ton Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time Min. Typ. Max. Units Conditions D MOSFET symbol 11 ­­­ ­­­ showing the A G integral reverse ­­­ ­­­ 44 S p-n junction diode. ­­­ ­­­ 1.5 V TJ = 25°C, IS = 11A, VGS = 0V ­­­ 530 790 ns TJ = 25°C, IF = 11A ­­­ 3.4 5.1 µC di/dt = 100A/µs Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) Starting TJ = 25°C, L = 6.4mH RG = 25, IAS = 11A. (See Figure 12) Pulse width 300µs; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS ISD 11A, di/dt 185A/µs, VDD V(BR)DSS, TJ 175°C 2 www.irf.com IRFSL11N50A IRFSL11N50A 100 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 10 1 4.5V 20µs PULSE WIDTH TJ = 25 °C 0.1 0.1 1 10 10 4.5V 100 1 3.0 RDS(on) , Drain-to-Source On Resistance (Normalized) I D , Drain-to-Source Current (A) TJ = 175 ° C TJ = 25 ° C 1 V DS = 50V 20µs PULSE WIDTH 6.0 7.0 VGS , Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics www.irf.com 100 Fig 2. Typical Output Characteristics 100 5.0 10 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 0.1 4.0 20µs PULSE WIDTH TJ = 175 ° C 1 VDS , Drain-to-Source Voltage (V) 10 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V TOP I D , Drain-to-Source Current (A) I D , Drain-to-Source Current (A) TOP 8.0 ID = 11A 2.5 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( °C) Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFSL11N50A IRFSL11N50A V GS C is s C rs s C os s C , C ap acitanc e (pF ) 10000 = = = = 20 0V, f = 1M Hz C g s + C g d , Cd s S H O R T E D C gd C ds + C gd VGS , Gate-to-Source Voltage (V) 100000 C iss 1000 C os s 100 10 C rs s 1 10 100 VDS = 400V VDS = 250V VDS = 100V 16 12 8 4 A 1 ID = 11A FOR TEST CIRCUIT SEE FIGURE 13 0 0 1000 10 20 30 40 50 QG , Total Gate Charge (nC) V C E , C o lle c to r-to -Em itte r V o lta g e (V ) Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage 100 1000 100 I D , Drain Current (A) ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 10 TJ = 175 ° C TJ = 25 ° C 1 10 100us 1ms 1 0.1 0.0 V GS = 0 V 0.4 0.8 1.2 VSD ,Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 4 10us 1.6 0.1 10ms TC = 25 ° C TJ = 175 ° C Single Pulse 10 100 1000 10000 VDS , Drain-to-Source Voltage (V) Fig 8. Maximum Safe Operating Area www.irf.com IRFSL11N50A IRFSL11N50A 12 RD VDS VGS 10 D.U.T. I D , Drain Current (A) RG + -VDD 8 VGS Pulse Width 1 µs Duty Factor 0.1 % 6 Fig 10a. Switching Time Test Circuit 4 VDS 2 90% 0 25 50 75 100 125 150 175 TC , Case Temperature ( ° C) 10% VGS Fig 9. Maximum Drain Current Vs. Case Temperature td(on) tr t d(off) tf Fig 10b. Switching Time Waveforms Thermal Response (Z thJC ) 1 D = 0.50 0.20 0.1 0.10 P DM 0.05 t1 0.02 0.01 t2 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case www.irf.com 5 IRFSL11N50A IRFSL11N50A D R IV E R L VDS D .U .T RG + - VD D IA S 20V 0 .0 1 tp Fig 12a. Unclamped Inductive Test Circuit V (B R )D SS tp A EAS , Single Pulse Avalanche Energy (mJ) 1000 1 5V TOP 800 BOTTOM ID 4.5A 7.8A 11A 600 400 200 0 25 50 75 100 125 150 175 Starting T , Junction Temperature( ° C) J IAS Fig 12c. Maximum Avalanche Energy Vs. Drain Current Fig 12b. Unclamped Inductive Waveforms QG VGS QGD 660 VG Charge Fig 13a. Basic Gate Charge Waveform Current Regulator Same Type as D.U.T. 50K 12V .2µF .3µF D.U.T. 640 620 600 580 + V - DS 560 VGS A 0 2 4 6 8 10 12 I av , A v alanc he C urrent (A) 3mA IG ID Current Sampling Resistors Fig 13b. Gate Charge Test Circuit 6 V D S a v , A valanche V oltage (V ) QGS Fig 12d. Typical Drain-to-Source Voltage Vs. Avalanche Current www.irf.com IRFSL11N50A IRFSL11N50A Peak Diode Recovery dv/dt Test Circuit + D.U.T Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer + - - + · · · · RG Driver Gate Drive P.W. + dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test D= Period - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFET® Power MOSFETs www.irf.com 7 IRFSL11N50A IRFSL11N50A TO-262 Package Outline TO-262 Part Marking Information WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 252-7105 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: + 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: + 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: + 39 11 451 0111 IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: + 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 Data and specifications subject to change without notice. 2/00 8 www.irf.com