IRFR9120 IRFU9120 SiHFR9120 SiHFU9120 2002/95/EC SiHFR9120-GE3 SiHFR9120-E3 - Datasheet Archive

 

Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · Halogen-free According to IEC 61249-2-21 Definition

 

IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · Halogen-free According to IEC 61249-2-21 Definition · Dynamic dV/dt Rating · Repetitive Avalanche Rated · Surface Mount (IRFR9120 IRFR9120, SiHFR9120 SiHFR9120) · Straight Lead (IRFU9120 IRFU9120, SiHFU9120 SiHFU9120) · Available in Tape and Reel · P-Channel · Fast Switching · Compliant to RoHS Directive 2002/95/EC 2002/95/EC - 100 RDS(on) () VGS = - 10 V 0.60 Qg (Max.) (nC) 18 Qgs (nC) 3.0 Qgd (nC) 9.0 Configuration Single S DPAK (TO-252) DESCRIPTION IPAK (TO-251) Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effictiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. G D D G S G D S D P-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free and Halogen-free Lead (Pb)-free SnPb DPAK (TO-252) SiHFR9120-GE3 SiHFR9120-GE3 IRFR9120PbF SiHFR9120-E3 SiHFR9120-E3 IRFR9120 IRFR9120 SiHFR9120 SiHFR9120 DPAK (TO-252) SiHFR9120TR-GE3a SiHFR9120TR-GE3a IRFR9120TRPbFa SiHFR9120T-E3a SiHFR9120T-E3a IRFR9120TRa SiHFR9120Ta SiHFR9120Ta DPAK (TO-252) SiHFR9120TRL-GE3a SiHFR9120TRL-GE3a IRFR9120TRLPbFa SiHFR9120TL-E3a SiHFR9120TL-E3a IRFR9120TRLa SiHFR9120TLa SiHFR9120TLa IPAK (TO-251) SiHFU9120-GE3 SiHFU9120-GE3 IRFU9120PbF SiHFU9120-E3 SiHFU9120-E3 IRFU9120PbF SiHFU9120 SiHFU9120 Note a. See device orientation. ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Continuous Drain Current VGS at - 10 V TC = 25 °C TC = 100 °C LIMIT VDS VGS Drain-Source Voltage Gate-Source Voltage - 100 ± 20 - 5.6 - 3.6 - 22 0.33 0.020 210 - 5.6 4.2 42 2.5 - 5.5 - 55 to + 150 260d ID Pulsed Drain Currenta IDM Linear Derating Factor Linear Derating Factor (PCB Mount)e Single Pulse Avalanche Energyb EAS Repetitive Avalanche Currenta IAR EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 °C PD Maximum Power Dissipation (PCB Mount)e TA = 25 °C dV/dt Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 25 V, starting TJ = 25 °C, L = 10 mH, Rg = 25 , IAS = - 5.6 A (see fig. 12). c. ISD - 6.8 A, dI/dt 110 A/s, VDD VDS, TJ 150 °C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). UNIT V A W/°C mJ A mJ W V/ns °C * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91280 S10-1135-Rev. B, 10-May-10 www.vishay.com 1 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix THERMAL RESISTANCE RATINGS SYMBOL MIN. TYP. MAX. Maximum Junction-to-Ambient PARAMETER RthJA - - 110 Maximum Junction-to-Ambient (PCB Mount)a RthJA - - 50 Maximum Junction-to-Case (Drain) RthJC - - UNIT 3.0 °C/W Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = - 250 A - 100 - - V VDS/TJ Reference to 25 °C, ID = - 1 mA - - 0.098 - V/°C Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) VDS = VGS, ID = - 250 A - 2.0 - - 4.0 V Gate-Source Leakage Gate-Source Threshold Voltage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs VDS = - 100 V, VGS = 0 V - - - 100 VDS = - 80 V, VGS = 0 V, TJ = 125 °C - - - 500 - 0.60 - - S - VDS = - 50 V, ID = - 3.4 A - 1.5 ID = - 3.4 Ab VGS = - 10 V A 390 - Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5 - 170 - - 45 - - - 18 - - 3.0 Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 9.0 Turn-On Delay Time td(on) - 9.6 - tr - 29 - - 21 - - 25 - - 4.5 - - 7.5 - - - - 5.6 - - - 22 - - pF - 6.3 Rise Time Turn-Off Delay Time Fall Time td(off) VGS = - 10 V ID = - 6.8 A, VDS = - 80 V, see fig. 6 and 13b VDD = - 50 V, ID = - 6.8 A, Rg = 18 , RD = 7.1 , see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = - 5.6 A, VGS = 0 Vb TJ = 25 °C, IF = - 6.8 A, dI/dt = 100 A/sb V - 100 200 ns - 0.33 0.66 C Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %. www.vishay.com 2 Document Number: 91280 S10-1135-Rev. B, 10-May-10 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91280 S10-1135-Rev. B, 10-May-10 Fig. 3 - Typical Transfer Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 8 - Maximum Safe Operating Area Document Number: 91280 S10-1135-Rev. B, 10-May-10 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix RD VDS VGS D.U.T. Rg VDD + - 10 V Pulse width 1 µs Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit td(on) tr td(off) tf VGS 10 % 90 % VDS Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91280 S10-1135-Rev. B, 10-May-10 www.vishay.com 5 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix L Vary tp to obtain required IAS IAS VDS VDS D.U.T Rg + V DD VDD IAS tp - 10 V 0.01 tp Fig. 12a - Unclamped Inductive Test Circuit VDS Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 k QG - 10 V 12 V 0.2 µF 0.3 µF QGD - D.U.T. VG + QGS VDS VGS - 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91280 S10-1135-Rev. B, 10-May-10 IRFR9120 IRFR9120, IRFU9120 IRFU9120, SiHFR9120 SiHFR9120, SiHFU9120 SiHFU9120 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit D.U.T. + Circuit layout considerations · Low stray inductance · Ground plane · Low leakage inductance current transformer + - Rg + · dV/dt controlled by Rg · ISD controlled by duty factor "D" · D.U.T. - device under test + - VDD Note · Compliment N-Channel of D.U.T. for driver Driver gate drive P.W. Period D= P.W. Period VGS = - 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple 5 % ISD Note a. VGS = - 5 V for logic level and - 3 V drive devices Fig. 14 - For P-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91280. Document Number: 91280 S10-1135-Rev. B, 10-May-10 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1