IRFPS38N60L SiHFPS38N60L SiHFPS38N60L-E3 1E-006 1E-005 - Datasheet Archive

 

Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · Superfast Body Diode Eliminates the Need for External

 

IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications 600 RDS(on) () VGS = 10 V Qg (Max.) (nC) 0.12 · Lower Gate Charge Results in Simple Drive Requirements 320 Qgs (nC) 85 Qgd (nC) 160 Configuration Available RoHS* COMPLIANT · Enhanced dV/dt Capabilities Offer Improved Ruggedness · Higher Gate Voltage Threshold Offers Improved Noise Immunity Single D · Lead (Pb)-free Available APPLICATIONS Super TO-247 · Zero Voltage Switching SMPS G · Telecom and Server Power Supplies · Uniterruptible Power Supplies S D G · Motor Control applications S N-Channel MOSFET ORDERING INFORMATION Package Super TO-247 IRFPS38N60LPbF Lead (Pb)-free SiHFPS38N60L-E3 SiHFPS38N60L-E3 IRFPS38N60L IRFPS38N60L SnPb SiHFPS38N60L SiHFPS38N60L ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 600 Gate-Source Voltage VGS ± 30 Continuous Drain Current VGS at 10 V TC = 25 °C ID TC = 100 °C Pulsed Drain Currenta UNIT V 38 24 A IDM 150 4.3 W/°C EAS 680 mJ Currenta IAR 38 A Repetitive Avalanche Energya EAR 54 mJ Linear Derating Factor Single Pulse Avalanche Energyb Repetitive Avalanche Maximum Power Dissipation TC = 25 °C Mounting Torque 540 W 19 V/ns TJ, Tstg Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) PD dV/dt Peak Diode Recovery dV/dtc - 55 to + 150 for 10 s 6-32 or M3 screw 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Starting TJ = 25 °C, L = 0.91 mH, RG = 25 , IAS = 38 A, dV/dt = 13 V/ns (see fig. 14a). c. ISD 38 A, dI/dt 630 A/µs, VDD VDS, TJ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 www.vishay.com 1 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT RthJA RthCS RthJC Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) 0.24 - 40 0.22 °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static VDS VDS Temperature Coefficient VGS = 0 V, ID = 250 µA 600 - - V VDS/TJ Drain-Source Breakdown Voltage Reference to 25 °C, ID = 1 mA - 410 - mV/°C VGS(th) VDS = VGS, ID = 250 µA 3.0 - 5.0 V Gate-Source Leakage IGSS VGS = ± 30 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 600 V, VGS = 0 V - - 50 µA VDS = 480 V, VGS = 0 V, TJ = 125 °C - - 2.0 mA Gate-Source Threshold Voltage Drain-Source On-State Resistance RDS(on) Forward Transconductance gfs - 0.12 0.15 VDS = 50 V, ID = 23 Ab 20 - - S ID = 23 Ab VGS = 10 V Dynamic Input Capacitance Ciss VGS = 0 V, - 7990 - Output Capacitance Coss VDS = 25 V, - 740 - Crss f = 1.0 MHz, see fig. 5 - 72 - - 350 - - 260 - - - 320 - - 85 - - 160 Reverse Transfer Capacitance Effective Output Capacitance Coss eff. Effective Output Capacitance (Energy Related) Coss eff. (ER) Total Gate Charge VGS = 0 V VDS = 0 V to 480 Vc Qg Gate-Source Charge Qgs Gate-Drain Charge VGS = 10 V ID = 38 A, VDS = 480 V Qgd Gate Resistance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time RG td(on) tr see fig. 7 and 15b f = 1 MHz, open drain - 1.2 - - 44 130 - - 92 - - 69 - 38 - - 150 TJ = 25 °C, IS = 38 A, VGS = 0 Vb - - 1.5 - - nC - - pF VDD = 300 V, ID = 38 A, td(off) RG = 4.3 , VGS = 10 V, tf see fig. 11a and 11bb ns Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage IS ISM VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Reverse Recovery Time IRRM MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IF = 38 A - 170 250 TJ = 125 °C, dI/dt = 100 A/µsb - 420 630 TJ = 25 °C, IF = 38 A, VGS = 0 Vb - 830 1240 - 2600 3900 - 9.1 14 TJ = 125 °C, dI/dt = 100 TJ = 25 °C A/µsb V ns nC A Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 12). b. Pulse width 300 µs; duty cycle 2 %. c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising form 0 % to 80 % VDS. Coss eff. (ER) is a fixed capacitance that stores the same energy as Coss while VDS is rising from 0 % to 80 % VDS. www.vishay.com 2 Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 1000 1000 10 BOTTOM ID, Drain-to-Source Current ( ) ID, Drain-to-Source Current (A) TOP 100 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 1 0.1 4.5V 0.01 100 T J = 150°C 10 1 T J = 25°C 0.1 20µs PULSE WIDTH Tj = 25°C 0.001 0.01 0.1 1 10 100 4 VDS, Drain-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics 8 10 12 14 16 Fig. 3 - Typical Transfer Characteristics 3.0 100 BOTTOM 10 4.5V 1 20µs PULSE WIDTH Tj = 150°C ID = 38A 2.5 VGS = 10V 2.0 (Normalized) TOP VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V RDS(on) , Drain-to-Source On Resistance 1000 ID, Drain-to-Source Current (A) 6 VGS , Gate-to-Source Voltage (V) 1.5 1.0 0.5 0.0 0.1 0.1 1 10 100 -60 -40 -20 0 20 40 60 80 100 120 140 160 VDS, Drain-to-Source Voltage (V) T J , Junction Temperature (°C) Fig. 2 - Typical Output Characteristics Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 www.vishay.com 3 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix 100000 C, Capacitance(pF) 10000 = 0V, f = 1 MHZ =C +C , C gs gd ds SHORTED =C gd =C +C ds gd Ciss 1000 Coss 100 Crss 12.0 ID= 38A VGS , Gate-to-Source Voltage (V) VGS Ciss Crss Coss 10.0 VDS= 480V VDS= 300V VDS= 120V 8.0 6.0 4.0 2.0 0.0 10 1 10 100 0 1000 VDS , Drain-to-Source Voltage (V) 50 100 150 200 250 Q G Total Gate Charge (nC) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Gate Charge vs. Gate-to-Source Voltage 1000.00 50 ISD, Reverse Drain Current (A) 45 40 100.00 Energy (µJ) 35 30 25 20 15 10 T J = 150°C 10.00 1.00 5 T J = 25°C VGS = 0V 0.10 0 0 100 200 300 400 500 600 700 VDS, Drain-to-Source Voltage (V) Fig. 6 - Typical Output Capacitance Stored Energy vs. VDS www.vishay.com 4 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD, Source-to-Drain Voltage (V) Fig. 8 - Typical Source-Drain Diode Forward Voltage Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix RD 1000 VDS ID, Drain-to-Source Current (A) OPERATION IN THIS AREA LIMITED BY R DS(on) VGS D.U.T. RG 100 + - VDD 10 V 100µsec 10 Pulse width 1 µs Duty factor 0.1 % 1msec Fig. 11a - Switching Time Test Circuit 1 Tc = 25°C Tj = 150°C Single Pulse VDS 10msec 90 % 0.1 1 10 100 1000 10000 10 % VGS VDS, Drain-to-Source Voltage (V) Fig. 9 - Maximum Safe Operating Area td(on) 40 td(off) tf tr Fig. 11b - Switching Time Waveforms 35 ID, Drain Current (A) 30 25 20 15 10 5 0 25 50 75 100 125 150 T C , Case Temperature (°C) Fig. 10 - Maximum Drain Current vs. Case Temperature Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.01 0.05 0.02 0.01 P DM t1 0.001 t2 SINGLE PULSE ( THERMAL RESPONSE ) Notes: 1. Duty factor D = 2. Peak T t1/ t 2 J = P DM x Z thJC +T C 0.0001 1E-006 1E-006 1E-005 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig. 12 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 www.vishay.com 5 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix VGS(th) Gate threshold Voltage (V) 5.0 VDS 4.5 tp 4.0 3.5 3.0 ID = 250µA 2.5 IAS 2.0 Fig. 14c - Unclamped Inductive Waveforms 1.5 1.0 Current regulator Same type as D.U.T. 0.5 0.0 -75 -50 -25 0 25 50 75 50 k 100 125 150 175 12 V T J , Temperature ( °C ) 0.2 µF 0.3 µF + Fig. 13 - Threshold Voltage vs. Temperature D.U.T. VDS VGS 1400 EAS , Single Pulse Avalanche Energy (mJ) - ID TOP 17A 24A BOTTOM 38A 1200 1000 3 mA IG ID Current sampling resistors Fig. 15a - Basic Gate Charge Waveform 800 600 400 QG VGS 200 QGS QGD 0 25 50 75 100 125 150 Starting T J , Junction Temperature (°C) Fig. 14a - Maximum Avalanche Energy vs. Drain Current VG Charge Fig. 15b - Gate Charge Test Circuit 15 V L VDS D.U.T RG IAS 20 V tp Driver + - VDD A 0.01 Fig. 14b - Unclamped Inductive Test Circuit www.vishay.com 6 Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 IRFPS38N60L IRFPS38N60L, SiHFPS38N60L SiHFPS38N60L Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit Layout Considerations · Low Stray Inductance · Ground Plane · Low Leakage Inductance Current Transformer + - - · · · · RG dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test Driver Gate Drive P.W. + Period D= + - VDD P.W. Period VGS=10V * D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Curent Ripple 5% ISD * VGS. = 5 V for Logic Level Devices Fig. 16 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91259. Document Number: 91259 S09-0059-Rev. A, 02-Feb-09 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1