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Part : IRFN250 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $62.09 Price Each : $73.89
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IRFN250 Datasheet

Part Manufacturer Description PDF Type
IRFN250 International Rectifier HEXFET Power Mosfet Original
IRFN250 International Rectifier 200V Single N-Channel Hi-Rel MOSFET in a SMD-1 package Original
IRFN250 International Rectifier 200 Volt, 0.10 Ohm HEXFET POWER MOSFET Original
IRFN250 International Rectifier HEXFET Power Mosfet Original
IRFN250 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan
IRFN250 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFN250SMD Semelab N-CHANNEL POWER MOSFET Original

IRFN250

Catalog Datasheet MFG & Type PDF Document Tags

IRFN250

Abstract: Provisional Data Sheet No. PD-9.1549 HEXFET® POWER MOSFET IRFN250 N-CHANNEL 200 Volt , IRFN250 BVDSS 200V RDS(on) 0.100 ID 27.4A Features: s s s s s s s Avalanche , Temperature Weight IRFN250 27.4 17 110 150 1.2 ±20 500 27.4 15.0 5.0 -55 to 150 Units A W W/K V mJ A mJ V/ns oC 300 (for 5 seconds) 2.6 (typical) g IRFN250 Device , Soldered to a copper clad PC board IRFN250 Device Fig. 1 - Typical Output Characteristics TC = 25
International Rectifier
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2N7225U

Abstract: SMD1P PD-91549B IRFN250 JANTX2N7225U ® HEXFET POWER MOSFET JANTXV2N7225U [REF:MIL-PRF-19500/592 , . Product Summary Part Number IRFN250 BVDSS 200V RDS(on) 0.100 ID 27.4A Features: n n n , (typical) g 1 12/20/99 IRFN250, JANTX-, JANTXV-, 2N7225U Devices Electrical Characteristics @ , °C/W Test Conditions Soldered to a copper-clad PC board www.irf.com IRFN250, JANTX , www.irf.com 3 IRFN250, JANTX-, JANTXV-, 2N7225U Devices Fig 5. Typical Capacitance Vs
International Rectifier
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SMD1P mosfet ir 250 n 2n7225
Abstract: PD - 91549C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary IRFN250 JANTX2N7225U , ) ID IRFN250 0.100 â"¦ 27.4A HEXFET® MOSFET technology is the key to International , footnotes refer to the last page www.irf.com 1 1/28/01 IRFN250 Electrical Characteristics @ Tj , 2 www.irf.com IRFN250 Fig 1. Typical Output Characteristics Fig 2. Typical Output , www.irf.com 3 IRFN250 13a & b Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 7 International Rectifier
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IRFN250

Abstract: ® POWER MOSFET IRFN250 N-CHANNEL 200 Volt, 0.100 HEXFET Product Summary HEXFET technology , enhancing thermal and electrical performance. Part Number IRFN250 BVDSS 200V RDS(on) 0.100 , °C VGS EAS I AR EAR dv/dt TJ TSTG IRFN250 Continuous Drain Current Continuous Drain Current , IRFN250 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max , Previous Datasheet Index Next Data Sheet IRFN250 Device Fig. 2 - Typical Output
International Rectifier
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IRFN250

Abstract: JANTX2N7225U PD - 91549C POWER MOSFET SURFACE MOUNT(SMD-1) Product Summary IRFN250 JANTX2N7225U , ) ID IRFN250 0.100 27.4A HEXFET® MOSFET technology is the key to International Rectifier , page www.irf.com 1 1/28/01 IRFN250 Electrical Characteristics @ Tj = 25°C (Unless , the last page 2 www.irf.com IRFN250 Fig 1. Typical Output Characteristics Fig 2 , On-Resistance Vs. Temperature www.irf.com 3 IRFN250 13a & b Fig 5. Typical Capacitance Vs
International Rectifier
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power mosfet audio 160V
Abstract: thermal and electrical performance. provisional Data Sheet No. PD-9.1549 IRFN250 N -C H A N N E L P ro d u c t S um m an 1 Part Number IRFN250 BVdss 200V RDS(oo) 0.1 OOfi t o 27.4A , 10V, T c - 25°C Continuous Drain Current IRFN250 27.4 17 110 150 1.2 ±20 500 27.4 15.0 5.0 -55 to , Surface Temperature Weight dv/dt Tj tstg 300 (for 5 seconds) 2.6 (typical) g IRFN250 , - K/W Test Conditions Soldered to a copper clad PC board IRFN250 Device 1 « ? ·« «* ·« tv -
OCR Scan

Diode SMD ED 9C

Abstract: p-channel 250V 30A power mosfet Number IRFN240 13.9 8.8 56 75 0.6 IRFN250 22 14 88 100 0.8 ±2 0 450 5.0 500 5.0 -5 5 to 150 °C 300 (for 5 , Temperature Coefficient of Breakdown Voltage Part Number IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 , IRFN140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 IRFN450 IRFNG40 IRFNG50 IRFN9140 P-Channel IRFN9240 IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 , . Typ. ALL ALL IRFN044 IRFN054 IRFN140 IRFN 150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440
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OCR Scan
Diode SMD ED 9C p-channel 250V 30A power mosfet P-CHANNEL 400V 15A FN240 i428 I-444 I-445
Abstract: ® POWER MOSFET IRFN250 N -C H A N N E L Product Summary 200 Volt, 0.100ft HEXFET HEXFET , termination pads, thereby enhancing thermal and electrical performance. Part Number IRFN250 I BVoss , Mount â  Light-weight Absolute Maximum Ratings Parameter IRFN250 27.4 17 110 150 1.2 +20 , "S5452 00E4Ã"77 SST \ IRFN250 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise , board IRFN250 Device Rg. 1 â'" Typical Output Characteristics Tc = 2S"C Fig. 2 â'" Typical -
OCR Scan
SS452
Abstract: SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 11.5 2.0 1.5 3.0 3.5 1 4.6 3.5 3 200V 14A 0.100 FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 VDSS ID(cont) RDS(on) 0.25 · SMALL FOOTPRINT ­ EFFICIENT USE OF PCB SPACE. 2 · SIMPLE DRIVE REQUIREMENTS 8.5 · LIGHTWEIGHT · HIGH , (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN250 LAB ELECTRICAL -
Original
220SM
Abstract: M il W llll : SEME IRFN250 LAB MECHANICAL DATA D im e nsio ns in mm (inches) N-CHANNEL POWER MOSFET 0.25 11.5 2.0 3.5 3.5 3.0 V DSS I D(cont) 200V 14A ^DS(on) -1 -iC 0.100Q FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE · SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 8.5 r r · SIMPLE DRIVE REQUIREMENTS · LIGHTWEIGHT · HIGH PACKING DENSITIES , . Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN250 LAB -
OCR Scan
10OA/
Abstract: im m = nil SEME IRFN250 LAB MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET 11.5 2.0 3.5 3.5 200V V Dss 0.25 14A 0.1 OOO ^D(cont) 3.0 ^DS(on) i5 FEATURES â'¢ HERMETICALLY SEALED SURFACE MOUNT PACKAGE â'¢ SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. â'¢ SIMPLE DRIVE REQUIREMENTS â'¢ LIGHTWEIGHT â'¢ HIGH PACKING DENSITIES ,   \ Prelim. 7/94 SEME IRFN250 LAB ELECTRICAL CHARACTERISTICS Parameter Min. Test Conditions -
OCR Scan
A1331B7
Abstract: IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm (inches) Nâ'"CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 , ://www.semelab.co.uk Document Number 3352 Issue 2 IRFN250 2N7225U1 ELECTRICAL CHARACTERISTICS (Tamb = 25Â Semelab
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IRF250SMD

TO-276

Abstract: TO276AB IRFN250 2N7225U1 MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 4 .1 4 (0 .1 6 3 ) 3 .8 4 (0 .1 5 1 ) VDSS ID(cont) RDS(on) 3 .6 0 (0 .1 4 2 ) M a x . 3 1 6 .0 2 (0 .6 3 1 ) 1 5 .7 3 (0 .6 1 9 ) 1 1 0 .6 9 (0 .4 2 1 ) 1 0 .3 9 (0 .4 0 9 ) 0 .7 6 (0 .0 3 0 ) m in . 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .7 0 (0 .1 4 6 ) 3 , IRFN250 2N7225U1 ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated) Parameter STATIC
Semelab
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TO-276 TO276AB

n10 smd

Abstract: 11 9.1 5.8 11 9.1 5.8 14 11 14 22 11 14 22 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250
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OCR Scan
n10 smd IRFE024 IRFE110 IRFE120 IRFE130 IRFE210 IRFE220

IRFG014

Abstract: IRFH450 V IRFN054 IRFN150 IRFN250 60 100 200 400 500 r 0S(0N) (max) n 0.Q14 0.055 0.085 0.30 0.40 Iq
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OCR Scan
IRFH450 IRFG014 s 9413 9410 N-channel smd 9410 IRFH150 1RFH250 IRFH350 T0-210AC IRFH9140

IRLF110

Abstract: IRFJ140 N-Channel IRFE130 100 0.18 5.0 20 10 H22 LCC IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 60 100 200
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OCR Scan
IRLF110 IRFJ140 IRLF120 IRLF130 JO-39 IRFJ120 IRFJ130

IRLF110

Abstract: SMD H21 0.014 54 218 75 H21 SMD-1 IRFN150 100 0.055 26 104 IRFN250 200 0.085 20 80 IRFN350 400 0.30
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OCR Scan
SMD H21 GG101 IRFJ220 IRFJ230 IRFJ240 IRFJ320 IRFJ330
Abstract: IRFN250 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)200 V(BR)GSS (V)20 I(D) Max. (A)22 I(DM) Max. (A) Pulsed I(D)14 @Temp (øC)100# IDM Max (@25øC Amb)88 @Pulse Width (s) (Condition)300m Absolute Max. Power Diss. (W)100 Minimum Operating Temp (øC)-55 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case1.25 Thermal Resistance Junc-Amb.3.0 V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition)20 @I(D) (A) (Test Condition)250u I(DSS) Max American Microsemiconductor
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smd 662

Abstract: 2N7422 , IRFN250 2N7269, IRHM7250 2N7269U, IRHN7250 2N7434, IRHM7264SE 2N7423, IRHM9250 2N7423U, IRHN9250 2N7433
International Rectifier
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2N6845U 2N7389 2N7422 2N7422U 2N7383 2N7219U smd 662 2n7425 2N7426 MO036 2N6782 IRFF110 2N6782U 2N7334 IRFG110
Abstract: Part number search for devices beginning "IRFN250" Semelab Home Datasheets are downloaded as Acrobat PDF files. Fet Products PRODUCT IRFN250SMD IRFN250SMD-JQR-B Polarity N-Channel N-Channel Semelab
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