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Part : IRFN054 Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $65.09 Price Each : $77.59
Part : IRFN054SCV Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $130.59 Price Each : $179.09
Part : IRFN054SCX Supplier : Infineon Technologies Manufacturer : Avnet Stock : - Best Price : $84.39 Price Each : $106.09
Part : IRFN054 Supplier : International Rectifier Manufacturer : Future Electronics Stock : - Best Price : $70.25 Price Each : $87.81
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IRFN054 Datasheet

Part Manufacturer Description PDF Type
IRFN054 International Rectifier HEXFET Power Mosfet Original
IRFN054 International Rectifier HEXFET Power Mosfet Original
IRFN054 International Rectifier 60V Single N-Channel Hi-Rel MOSFET in a SMD-1 package; A IRFN054 with Standard Packaging Original
IRFN054 International Rectifier Government / Space Products - High Reliability Power MOSFETS Scan
IRFN054 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFN054SMD Semelab N-CHANNEL POWER MOSFET Original

IRFN054

Catalog Datasheet MFG & Type PDF Document Tags

smd diode S4 64a

Abstract: Provisional Data Sheet No. PD-9.1543A IO R Rectifier HEXFET® POWER MOSFET IRFN054 N -C H A , circuits. Product Summary Part Number B Voss IRFN054 60V RoS(on) Id 0 .0 2 0 0 55A , IRFN054 55* 40 256 150 1.2 ±20 480 55 15 4.5 -55 to 150 Units A W W/K® V mj A mJ V/ns °C 300 (for 5 seconds) 2.6 (typical) 9 IRFN054 Device Electrical Characteristics @ , copper clad PC board IRFN054 Device 10-' 10° IO1 Vog, ORAIN-TO-SOURCE VOLTAGE (VOLTS
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OCR Scan
smd diode S4 64a 5S452

IRFN054

Abstract: PD-91543C POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 55A* HEXFET® MOSFET , www.irf.com 1 02/15/10 IRFN054 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified , International Rectifier Website. For footnotes refer to the last page 2 www.irf.com IRFN054 Fig 1 , IRFN054 8000 C oss = C ds + C gd 5000 Ciss ID = 55A VGS, Gate-to-Source Voltage (V
International Rectifier
Original

DIODE SMD 55a

Abstract: IRFN054 ® POWER MOSFET IRFN054 N-CHANNEL 60 Volt, 0.020 HEXFET Product Summary HEXFET technology is , enhancing thermal and electrical performance. Part Number IRFN054 BV DSS 60V RDS(on) 0.020 , Junction Storage Temperature Range Package Mounting Surface Temperature Weight To Order IRFN054 , IRFN054 Device Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Min. Typ. Max , IRFN054 Device Fig. 2 - Typical Output Characteristics TC = 150°C Fig. 1 - Typical Output
International Rectifier
Original
DIODE SMD 55a ir mosfet smd package smd 2f

IRFN054

Abstract: PD - 91543B POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 55A* HEXFET® MOSFET , IRFN054 Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified) Parameter Min Typ , the last page 2 www.irf.com IRFN054 Fig 1. Typical Output Characteristics Fig 2 , Fig 4. Normalized On-Resistance Vs. Temperature 3 IRFN054 ID = 55A 13a & b Fig 5
International Rectifier
Original

Diode SMD ED 9C

Abstract: p-channel 250V 30A power mosfet Z> t stg IOR Part Number IRFN044 34 21 136 75 0.6 IRFN054 45 28 180 100 0.8 ±2 0 340 4.5 480 , Temperature Coefficient of Breakdown Voltage Part Number IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 IRFN450 IRFNG40 IRFNG50 IRFN9140 P-Channel IRFN9240 IRFN044 IRFN054 , P-Channel IRFN9240 IRFN044 IRFN054 IRFN 140 IRFN150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440 , . Typ. ALL ALL IRFN044 IRFN054 IRFN140 IRFN 150 IRFN240 IRFN250 N-Channel IRFN340 IRFN350 IRFN440
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OCR Scan
Diode SMD ED 9C p-channel 250V 30A power mosfet P-CHANNEL 400V 15A FN240 i428 I-444 I-445

IRFN054

Abstract: Provisional Data Sheet No. PD-9.1543A HEXFET® POWER MOSFET IRFN054 N-CHANNEL 60 Volt , IRFN054 BV DSS 60V RDS(on) 0.020 ID 55A* Features: s s s s s s s Avalanche Energy , Temperature Weight IRFN054 55* 40 256 150 1.2 ±20 480 55 15 4.5 -55 to 150 Units A W W/K V mJ A mJ V/ns oC 300 (for 5 seconds) 2.6 (typical) g IRFN054 Device Electrical , IRFN054 Device Fig. 1 - Typical Output Characteristics TC = 25°C Fig. 2 - Typical Output
International Rectifier
Original
Abstract: PD-91543C POWER MOSFET SURFACE MOUNT (SMD-1) IRFN054 60V, N-CHANNEL ® HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID IRFN054 0.020 â"¦ 55A* HEXFET , footnotes refer to the last page www.irf.com 1 02/15/10 IRFN054 Electrical Characteristics @ Tj , IRFN054 Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics ID = 55A , . Temperature 3 IRFN054 8000 C oss = C ds + C gd 5000 Ciss ID = 55A VGS, Gate-to-Source International Rectifier
Original

smd diode sm 3c

Abstract: tr/smd diode sm 3c N -C H A N N E L Product Summary Part Number IRFN054 B V dss 60V RDS(on) Id 55A* o.o2on , 10V, Tc " 25°C lD@ VGS= 10V, Tc - 100-C 'DM PD@ T c -25°C vgs IRFN054 55* 40 256 150 1.2 ±20 480 , Temperature Range Package Mounting Surface Temperature Weight IRFN054 Device Electrical Characteristics , . Units - - - TBD 0.83 - K/W Test Conditions Soldered to a copper clad PC board IRFN054 , . Draln-to-Source Voltage Fig. 6 - Typical Gate Charge Vs. Gate-to-Source Voltage IRFN054 Device 10
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smd diode sm 3c tr/smd diode sm 3c

4600 mosfet

Abstract: MOSFET 20V 45A SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm (inches) N­CHANNEL POWER MOSFET 11.5 2.0 1.5 3.0 3.5 1 4.6 3.5 3 60V 45A 0.027 FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE 9.0 15.8 VDSS ID(cont) RDS(on) 0.25 · SMALL FOOTPRINT ­ EFFICIENT USE OF PCB SPACE. 2 · SIMPLE DRIVE REQUIREMENTS 8.5 · LIGHTWEIGHT · HIGH PACKING , ) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN054 LAB ELECTRICAL
Semelab
Original
4600 mosfet MOSFET 20V 45A 220SM
Abstract: Mil W llll : SEME IRFN054 LAB N-CHANNEL POWER MOSFET VDSS 0.25 3.5 3.0 11.5 2.0 3.5 MECHANICAL DATA Dimensions in mm (inches) I D(cont) ^D S (on) 60V 45A 0.027Q iC r r -1 - FEATURES · HERMETICALLY SEALED SURFACE MOUNT PACKAGE · SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 8.5 · SIMPLE DRIVE REQUIREMENTS · LIGHTWEIGHT · HIGH PACKING DENSITIES TO , (01455) 556565. Telex: 341927. Fax (01455) 552612. Prelim. 7/94 SEME IRFN054 LAB (Tamb = 25 -
OCR Scan

n10 smd

Abstract: 11 9.1 5.8 11 9.1 5.8 14 11 14 22 11 14 22 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250
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n10 smd IRFE024 IRFE110 IRFE120 IRFE130 IRFE210 IRFE220
Abstract: SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 778, REV. - SHD219501 HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS (on) Equivalent to IRFN054 MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE ON-STATE DRAIN CURRENT @ TC = 25C VGS = 10V @ TC = 100C PULSED DRAIN CURRENT @ TC = 25C OPERATING AND STORAGE TEMPERATURE THERMAL RESISTANCE, JUNCTION TO CASE TOTAL DEVICE DISSIPATION @ TC = 25C ALL RATINGS ARE AT TC Sensitron Semiconductor
Original
Abstract: mi iFFi Nil SEME IRFN054 LAB MECHANICAL DATA Dimensions in mm (inches) N-CHANNEL POWER MOSFET V DSS 0.25 3.0 60V I D(cont) 11.5 45A 0.027a ^DS(on) FEATURES â'¢ HERMETICALLY SEALED SURFACE MOUNT PACKAGE o o > L I 1'_ â'¢ SMALL FOOTPRINT - EFFICIENT USE OF PCB SPACE. 2 â'¢ SIMPLE DRIVE REQUIREMENTS 8.5 â'¢ LIGHTWEIGHT â'¢ HIGH PACKING DENSITIES ,   y Prelim. 7/94 SEME IRFN054 LAB ELECTRICAL CHARACTERISTICS Parameter II o -
OCR Scan

IRLF110

Abstract: SMD H21 -205AF TO-39 Surface Mount Device â'" N-Channel IRFÉ130 100 0.18 5.0 20 10 H22 LCC j^^Vj IRFN054 60
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OCR Scan
IRLF110 IRLF120 IRLF130 IRFJ120 IRFJ130 SMD H21 GG101

IRFG014

Abstract: IRFH450 V IRFN054 IRFN150 IRFN250 60 100 200 400 500 r 0S(0N) (max) n 0.Q14 0.055 0.085 0.30 0.40 Iq
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OCR Scan
IRFH450 IRFG014 s 9413 9410 N-channel smd 9410 IRFH150 1RFH250 IRFH350 T0-210AC IRFH9140

IRLF110

Abstract: IRFJ140 N-Channel IRFE130 100 0.18 5.0 20 10 H22 LCC IRFN054 IRFN150 IRFN250 IRFN350 IRFN450 60 100 200
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OCR Scan
IRFJ140 JO-39 IRFJ220 IRFJ230 IRFJ240 IRFJ320
Abstract: IRFE9130 IRFE9210 IRFE9220 IRFE9230 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440 -
OCR Scan
IRHM7250 IRHM3250 IRHM4250 IRHM8250 JANSR2N7269 JANSF2N7269

SHD219501

Abstract: IRFN054 SENSITRON SEMICONDUCTOR SHD219501 TECHNICAL DATA DATA SHEET 778, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: 60 Volt, 0.020 Ohm, 55A MOSFET Isolated Hermetic Ceramic Package Fast Switching Low RDS (on) Equivalent to IRFN054 MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPECIFIED. TYP. - MAX. 20 55 40 256 +150 0.36 348 UNITS Volts Amps IDM TOP/TSTG R hJC PD MIN. -55 - BVDSS 60 - - Volts - - 2.0 20 - 0.02
Sensitron Semiconductor
Original

MNT-LB32N16-C4

Abstract: T0254 SEMELABpIc Type_No SELECTOR GUIDE Technology Polarity MOS PRODUCTS Package VDSS RDSSon ID Pd Ju n ei998 V e r.1.1 C¡ss_pf Qg_nC Td_on Tr Td_off Tf IRFF9210 IRFF9220 IRFF9230 IRFM044 IRFM054 IRFM140 IRFM150 IRFM240 IRFM250 IRFM340 IRFM350 IRFM360 IRFM440 IRFM460 IRFM9140 IRFM9240 IRFN044 IRFN054 IRFN140 IRFN150 IRFN240 IRFN250 IRFN340 IRFN350 IRFN440 IRFN450 IRFN9140 IRFN9240 IRFP150 IRFP151 IRFP152 IRFP153 IRFP450 IRFP451 IRFP452 IRFP453 IRFY044 IRFY044C IRFY120 IRFY120C IRFY130 IRFY130C
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OCR Scan
MNT-LB32N16-C4 SM5104 T0254 sml1001r1avr IRFY140 IRFY140C IRFY240 IRFY240C IRFV340 IRFY340C

TRANSISTOR BC 545 smd

Abstract: IRFN350 . Table A DEVICE ALPHA DESIGNATION DEVICE ALPHA DESIGNATION IRFN044 a IRFN350 h IRFN054 b IRFN440 i
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IRFN9040 TRANSISTOR BC 545 smd irfn44 IRFMG50 MIL-S-19500 I-404 I-405
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