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Part Manufacturer Description Datasheet BUY
IRFBE30STRLPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRFBE30SPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, TO-263, D2PAK-3 visit Digikey
IRFBE30LPBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, TO-262, I2PAK-3 visit Digikey
IRFBE30PBF Vishay Siliconix Power Field-Effect Transistor, 4.1A I(D), 800V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220, 3 PIN visit Digikey
IRFBE30STRL Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK visit Digikey
IRFBE30STRR Vishay Siliconix MOSFET N-CH 800V 4.1A D2PAK visit Digikey

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Part : IRFBE30LPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : €0.7539 Price Each : €1.5313
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 16,307 Best Price : $1.1060 Price Each : $1.71
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 1,000 Best Price : $0.6230 Price Each : $0.8444
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 250 Best Price : €0.5457 Price Each : €0.5457
Part : IRFBE30SPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : 350 Best Price : €0.9638 Price Each : €0.9638
Part : IRFBE30SPBF Supplier : Vishay Intertechnology Manufacturer : Avnet Stock : - Best Price : $1.4744 Price Each : $1.6739
Part : IRFBE30LPBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $1.15 Price Each : $2.58
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 169 Best Price : $1.11 Price Each : $1.45
Part : IRFBE30PBF. Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : 487 Best Price : $1.04 Price Each : $1.87
Part : IRFBE30SPBF Supplier : Vishay Intertechnology Manufacturer : Newark element14 Stock : - Best Price : $1.23 Price Each : $2.75
Part : IRFBE30LPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $1.02 Price Each : $1.09
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : 10,752 Best Price : $0.5750 Price Each : $0.6150
Part : IRFBE30SPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $1.27 Price Each : $1.36
Part : IRFBE30STRLPBF Supplier : Vishay Intertechnology Manufacturer : Future Electronics Stock : - Best Price : $1.68 Price Each : $1.68
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : RS Components Stock : 516 Best Price : £1.17 Price Each : £1.21
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : TME Electronic Components Stock : 364 Best Price : $0.67 Price Each : $0.92
Part : IRFBE30 Supplier : International Rectifier Manufacturer : Chip One Exchange Stock : 562 Best Price : - Price Each : -
Part : IRFBE30L Supplier : Integrated Silicon Solution Manufacturer : Chip One Exchange Stock : 109 Best Price : - Price Each : -
Part : IRFBE30PBF. Supplier : Vishay Intertechnology Manufacturer : element14 Asia-Pacific Stock : 781 Best Price : $0.81 Price Each : $2.2160
Part : IRFBE30PBF. Supplier : Vishay Intertechnology Manufacturer : Farnell element14 Stock : 666 Best Price : £0.5990 Price Each : £1.54
Part : IRFBE30PBF Supplier : Vishay Intertechnology Manufacturer : New Advantage Stock : 11,750 Best Price : $0.64 Price Each : $0.64
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IRFBE30 Datasheet

Part Manufacturer Description PDF Type
IRFBE30 Toshiba Power MOSFETs Cross Reference Guide Original
IRFBE30 Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB Original
IRFBE30 International Rectifier Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, Field Effect, N-Channel, Power, 800V, 4.1A, Pkg Style TO-220AB Scan
IRFBE30 International Rectifier TO-220 HEXFET Power MOSFET Scan
IRFBE30 International Rectifier TO-220 Plastic Package HEXFETs Scan
IRFBE30 International Rectifier HEXFET Power MOSFET Scan
IRFBE30 International Rectifier Power MOSFET(Vdss=800V, Rds(on)=3.0ohm, Id=4.1A) Scan
IRFBE30 N/A Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan
IRFBE30 N/A Shortform IC and Component Datasheets (Plus Cross Reference Data) Scan
IRFBE30L International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original
IRFBE30L International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a TO-262 package Original
IRFBE30L Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-262 Original
IRFBE30LPBF International Rectifier HEXFET Power MOSFET Original
IRFBE30LPBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-262 Original
IRFBE30PBF Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A TO-220AB Original
IRFBE30PBF International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Scan
IRFBE30S International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRFBE30S International Rectifier 800V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Original
IRFBE30S Vishay Siliconix FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 800V 4.1A D2PAK Original
IRFBE30SPBF International Rectifier HEXFET Power MOSFET Original
Showing first 20 results.

IRFBE30

Catalog Datasheet MFG & Type PDF Document Tags
Abstract: '" â'" 62 455 IRFBE30_ Electrical Characteristics @ Tj = 25 C (unless otherwise specified) IOR , International IS Rectifier PD-9.613A IRFBE30 HEXFET® Power MOSFET â'¢ Dynamic dv/dt Rating , Output Characteristics, Tc=25°C IRFBE30 Q. E < ® O ç 'to O D 10»' TOP Ilv , . Temperature O â'" go s n il « E c ^ 's q a en 457 IRFBE30 Vqs. Drain-to-Source Voltage (volts , . Maximum Drain Current Vs. Case Temperature IRFBE30 :vdd Fig 10a. Switching Time Test Circuit td(on) lr -
OCR Scan
T0-220
Abstract: Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix
Original
HFBE30 2002/95/EC IRFBE30P HFBE30-E3 2011/65/EU
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Intertechnology
Original
JS709A
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Siliconix
Original
Abstract: -220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted , IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , , exemptions may apply Document Number: 91118 S-81262-Rev. A, 07-Jul-08 www.vishay.com 1 IRFBE30, SiHFBE30 , -81262-Rev. A, 07-Jul-08 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless , . Temperature Document Number: 91118 S-81262-Rev. A, 07-Jul-08 www.vishay.com 3 IRFBE30, SiHFBE30 Vishay Siliconix
Original
Abstract: INFORMATION Package TO-220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE , IRFBE30 Power MOSFET FEATURES D TO-220 â'¢ Dynamic dV/dt Rating â'¢ Repetitive , 1 www.kersemi.com IRFBE30 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX , www.kersemi.com IRFBE30 TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 1 - Typical Output , www.kersemi.com IRFBE30 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical KERSEMI
Original
Abstract: MOSFET ORDERING INFORMATION Package TO-220 IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb , IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , -Jul-08 www.vishay.com 1 IRFBE30, SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP , S-81262-Rev. A, 07-Jul-08 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C , IRFBE30, SiHFBE30 Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 Vishay Siliconix
Original
IRFBE30 equivalent
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , G D COMPLIANT S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 , TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix Vishay Siliconix
Original
Abstract: Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix
Original
Abstract: International k? Rectifier r PD-9.613A IRFBE30 HHXFET® Power MOSFET â'¢ â'¢ â'¢ â , '" Rejc 455 Typ. â'" 0.50 â'" Max. Units 1.0 â'" 62 °C/W â  IRFBE30 , â  R INTERNATIONAL RECTIFIER IRFBE30 b5E D Id . D rain Current (Amps) W ,   INTERNATIONAL RECTIFIER b5E D l^R Capacitance (pF) IRFBE30 MÃ"55M52 DOIM^? 532 â  INR Qg , IRFBE30 bSE D Rd V ds > - VS f Y -A M f D.U.T. " I I ft. 0 - V dd Id. D rain -
OCR Scan
554S2 5S452
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Intertechnology
Original
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) â , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) Fig. 1 - Vishay Siliconix
Original
Abstract: Lead (Pb)-free SnPb TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 ABSOLUTE MAXIMUM RATINGS (TC = , IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max , ?91000 IRFBE30, SiHFBE30 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient , FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix TYPICAL CHARACTERISTICS (25 , DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix
Original
Abstract: IRFBE30, SiHFBE30 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) · , D COMPLIANT S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRFBE30PbF SiHFBE30-E3 IRFBE30 SiHFBE30 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless , DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix THERMAL , ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRFBE30, SiHFBE30 Vishay Siliconix
Original
Abstract: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: (561) 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TO-220AB TYPE: IRFBE30 HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING: Drain ­ Source Voltage Drain ­ Gate Voltage Drain Current ­ Continuous Drain Current ­ Pulsed Gate ­ Source Voltage Power Dissipation , 4.0 100 0.1 0.5 Page 1 of 2 TYPE: IRFBE30 Symbol VSD trr Qrr Qg ID = 4.1A, VGS = 400V, VGS = Semiconductor Technology
Original
Abstract: IRFBE30 Transistors N-Channel Enhancement MOSFET Military/High-RelN V(BR)DSS (V)800 V(BR)GSS (V) I(D) Max. (A)4.1 I(DM) Max. (A) Pulsed I(D)2.6 @Temp (øC)100# IDM Max (@25øC Amb)16 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)-55Ãu Maximum Operating Temp (øC)150Ãu Thermal Resistance Junc-Case1.0 Thermal Resistance Junc-Amb.62 V(GS)th Max. (V)4.0 V(GS)th (V) (Min)2.0 @(VDS) (V) (Test Condition) @I(D) (A) (Test Condition)250u I(DSS) Max. (A American Microsemiconductor
Original
Abstract: IRFBE22 800 7.8 1.6 6.4 50 IRFBE20 6.5 1.8 7.2 50 IRFBE32 3.8 2.8 11 74 IRFBE30 -
OCR Scan
IRF712 IRF722 IRF720 IRF732 IRF730 IRF742 1rf730 IRF9513 irfbf30 IRF9521 IRFBG30 THOMSON DISTRIBUTOR 58e d T0-22QAB IRF710
Abstract: International I» i Rectifier TO-220 N-Channel Part Number IRF712 IRF710 IRF722 IRF720 IRF732 IRF730 IRF742 IRF740 IRF823 IRF821 IRF833 IRF831 IRF843 IRF841 IRF822 IRF820 IRF832 IRF830 IRF842 IRF840 IRFBC20 IRFBC32 IRFBC30 IRFBC42 IRFBC40 IRFBE22 IRFBE20 IRFBE32 IRFBE30 IRFBF22 IRFBF20 IRFBF32 IRFBF30 IRFBG22 IRFBG20 IRFBG32 IRFBG30 V os Drain Source Voltage (Volts) 400 RDS(on) On-State Resistance (Ohms) 5.0 3.6 2.5 1.8 1.5 1.0 0.80 0.55 4.0 3.0 2.0 1.5 I q Continuous Drain Current 25°C Case (Amps) 1.7 -
OCR Scan
IRF9511 TQ-220AB IRF9Z12 IRF9Z10 IRF9Z22 IR9FZ20 IRF9Z32
Abstract: IRFBC20 IRFBC30 IRFBC40 IRFBE20 IRFBE30 IRFBF20 IRFBF30 IRFBG20 IRFBG30 Part number in bold indicates -
OCR Scan
IRFBC10LC IRF1310 IRF744 irf630 irf640 IRFZ44 MOSFETs IRF740LC IRF840LC IRFBC40LC T0-220AB IRFZ46
Abstract: PLASTIC PACKAGE HEXFETs INTERNATIONAL RECTIFIER TO-220 Package M-CHANNEL EbE » INTERNATIONAL RECTIFIER IOR 4Ã5S4S5 OQlQSSb s â  - Types Vds Rds(ON) (max) n Iq cont TC - 25°C A 'DM PO max W Bulletin Case Style IRF840 IRF842 IRF830 IRF832 IRF820 IRF822 500 IRFBC40 IRFBC42 IRFBC30 IRFBC32 IRFBC20 600 IRFBE30 IRFBE32 IRFBE20 IRFBE22 800 IRFBF30 IRFBF32 IRFBF20 IRFBF22 900 IRFBG30 IRFBG32 IRFBG20 IRFBG22 1000 P-CHANNEL 0.8S 1.1 1.5 2.5 3.0 4.0 1.20 1.60 2.20 2.70 4.40 3.20 -
OCR Scan
IRF9523 IRF9512 IRF9612 IRF830 International rectifier 9390 9422 9320 IRF9Z34 IRF9Z35 IRF9Z24 IRF9Z25 IRF9Z14 IRF9Z15
Abstract: IRFP441 2SK512 IRF452 2SK513 IRFBE30 2SK534 IRFPE30 2SK537 IRFBF30 2SK538 IRFPF40 2SK552 IRF831 2SK553 Space Power Electronics
Original
2SK355 2N4351 MOTOROLA MRF966 2N3819 MOTOROLA BFS28 3SK124 3SK45 IRF241 2SK357 BUZ30 BUZ43A IRF623
Abstract: 1.200 Y 1.200 7.000 Y 650V Low Charge 1.200 IRFPE50 90573 IRFPE40 90578 IRFBE30 90613 International Rectifier
Original
IRFBA40N60C irf510 switch 800v irf IRL2505 IRF634L IRF540NL IRL3302 IRL3202 IRL3102 IRL3402 IRL3502 220TM
Showing first 20 results.